P-CHANNEL POWER MOSFET WITH LOW ON-STATE RESISTANCE Search Results
P-CHANNEL POWER MOSFET WITH LOW ON-STATE RESISTANCE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P |
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| MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
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| MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN |
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| MGN1S0508MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-8V GAN |
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| MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN |
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P-CHANNEL POWER MOSFET WITH LOW ON-STATE RESISTANCE Datasheets Context Search
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Contextual Info: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.045Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP132A1545SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching |
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XP132A1545SR XP132A1545SR | |
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Contextual Info: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.11Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP132A11A1SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching |
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XP132A11A1SR XP132A11A1SR | |
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Contextual Info: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.075Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP132A1275SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching |
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XP132A1275SR XP132A1275SR | |
ultra low idss
Abstract: ultra low igss XP132A11A1SR
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XP132A11A1SR XP132A11A1SR ultra low idss ultra low igss | |
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Contextual Info: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.045Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP132A1545SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching |
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XP132A1545SR XP132A1545SR | |
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Contextual Info: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.075Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP132A1275SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching |
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XP132A1275SR XP132A1275SR | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT4425 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT4425 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low |
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UTT4425 UTT4425 UTT4425L-S08-R QW-R502-562 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT4407 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT4407 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low |
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UTT4407 UTT4407 UTT4407L-S08-R UTT4407G-S08-R UTT4407L-S08-T UTT4407G-S08-T QW-R502-554 | |
ESD 141
Abstract: ON10M
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UTT4425 UTT4425 UTT4425L-S08-R UTT4425G-S08-R QW-R502-562 ESD 141 ON10M | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3443 Power MOSFET P-CHANNEL 2.5-V G-S MOSFET DESCRIPTION The UTC UT3443 is a P-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 12V gate |
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UT3443 UT3443 UT3443G-AG6-R OT-26 QW-R502-557 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30NP30 Power MOSFET DUAL POWER MOSFET N-CHANNEL/P-CHANNEL DESCRIPTION The UTC UTT30NP30 is a dual power MOSFET. it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, low capacitance and low gate charge, etc. |
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UTT30NP30 UTT30NP30 O-252-4 QW-R502-A40 | |
UT3443Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3443 Preliminary Power MOSFET P-CHANNEL 2.5-V G-S MOSFET DESCRIPTION The UTC UT3443 is a P-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 12V gate |
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UT3443 UT3443 OT-26 UT3443L-AG6-R UT3443G-AG6-R QW-R502-557 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N70-P Power MOSFET 6.0A, 700V N-CHANNEL POWER MOSFET 1 DESCRIPTION 1 The UTC 6N70-P is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed, low gate |
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6N70-P 6N70-P O-251 O-220F2 O-220F O-252 6N70L-TF2-T 6N70G-TF2-T 6N70L-TF3-T | |
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Contextual Info: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance: 0.075Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package ◆2 FET Devices Built-in •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP134A1275SR is a P-channel Power MOSFET with low |
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XP134A1275SR XP134A1275SR | |
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Contextual Info: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.28Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP162A11C0PR is a P-channel Power MOSFET with low |
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OT-89 XP162A11C0PR OT-89 XP162A11C0PR XP161A11A1PR | |
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Contextual Info: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.45Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-23 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP152A11E5MR is a P-channel Power MOSFET with low |
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OT-23 XP152A11E5MR OT-23 XP152A11E5MR | |
XP134A1275SRContextual Info: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance: 0.075Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package ◆2 FET Devices Built-in •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP134A1275SR is a P-channel Power MOSFET with low |
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XP134A1275SR XP134A1275SR | |
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Contextual Info: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.17Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP162A12A6PR is a P-channel Power MOSFET with low |
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OT-89 XP162A12A6PR OT-89 XP162A12A6PR XP161A11A1PR | |
XP152A11E5MR
Abstract: MOSFET P-Channel sot-23
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OT-23 XP152A11E5MR OT-23 XP152A11E5MR MOSFET P-Channel sot-23 | |
p-channel mosfet sot89 5V
Abstract: XP161A11A1PR XP162A11C0PR MOSFET SOT-89 package p-channel mosfet with diode sot89
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OT-89 XP162A11C0PR OT-89 XP162A11C0PR XP161A11A1PR p-channel mosfet sot89 5V XP161A11A1PR MOSFET SOT-89 package p-channel mosfet with diode sot89 | |
251S2Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N70-P Power MOSFET 6.0A, 700V N-CHANNEL POWER MOSFET 1 1 TO-220F DESCRIPTION The UTC 6N70-P is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed, low gate |
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6N70-P O-220F 6N70-P O-251 O-251L O-251S O-251S2 O-220F2 O-251S4 251S2 | |
XP152A12C0MR
Abstract: MOSFET P-Channel sot-23 Ultra Low voltage rds mosfet ultra low idss
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OT-23 XP152A12C0MR OT-23 XP152A12C0MR MOSFET P-Channel sot-23 Ultra Low voltage rds mosfet ultra low idss | |
p-channel mosfet sot89 5V
Abstract: XP162A12A6PR XP161A11A1PR MOSFET SOT-89 package Ultra Low voltage rds mosfet p-channel mosfet with diode sot89
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OT-89 XP162A12A6PR OT-89 possible25 XP162A12A6PR XP161A11A1PR p-channel mosfet sot89 5V XP161A11A1PR MOSFET SOT-89 package Ultra Low voltage rds mosfet p-channel mosfet with diode sot89 | |
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Contextual Info: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance: 0.11Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package ◆Two FET Devices Built-in •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP134A11A1SR is a P-channel Power MOSFET with low |
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XP134A11A1SR XP134A11A1SR | |