P-Channel Depletion-Mode
Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
Text: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385
|
Original
|
2N5547JANTX
2N5547JANTXV
2N4856JAN
2N6660JANTX
2N4856JANTX
2N6660JANTXV
2N4856JANTXV
2N6661JAN
2N4857JAN
2N6661JANTX
P-Channel Depletion-Mode
MD80C31
JANTX2N4858
5962-9089101MEA
SI9110AK
JANTX2N6661
4Kx8 sram ttl
MGM TRANSFORMER
JANTX2N5114
janTXV2N5545
|
PDF
|
CD4016BEX
Abstract: MCT thyristor 1000v MCT thyristor 100v A23 D-pak transistor 60n06 HARRIS CD4000 QML cdp68hc68 cd4000 cmos logic series guide SMD L4 Transistor SOT-223 CD4016BE
Text: Harris Semiconductor Ordering Information Guide PRODUCT NOMENCLATURES January 1998 S E M I C O N D U C T O R BR-027.4 HARRIS ORDERING NOMENCLATURE GUIDE Table of Contents PAGE HARRIS ORDERING NOMENCLATURE GUIDE Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
|
Original
|
BR-027
82CXXX
CD4016BEX
MCT thyristor 1000v
MCT thyristor 100v
A23 D-pak
transistor 60n06
HARRIS CD4000 QML
cdp68hc68
cd4000 cmos logic series guide
SMD L4 Transistor SOT-223
CD4016BE
|
PDF
|
2n7425
Abstract: 2n7389 2N7422 2N7433 2N7389 TO39 TO-254 2N7269 2n7391 to39 2N7262
Text: MIL-PRF-19500 QPL STATUS QPL Status Hex Size 1 1 1 1 2 2 3 3 3 3 3 3 3 3 4 4 5 5 5 5 CH N N N/P P N P N N P P N N P P N P N N N N Package TO39 M0036 MO036 MO036 TO39 TO39 TO3 TO39 TO3 TO39 TO39 TO257 TO257 TO39 TO254 TO254 TO3 TO254 TO254 TO254 March 1998
|
Original
|
MIL-PRF-19500
M0036
MO036
2N7394
2N6782
2N7334
2N7336
2N7335
2N6788
2n7425
2n7389
2N7422
2N7433
2N7389 TO39
TO-254
2N7269
2n7391
to39
2N7262
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FSL923AOD, FSL923AOR H A R R IS S E M I C O N D U C T O R 5A, -200V, 0.670 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 5A, -200V, ro s O N = 0.670Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened M O SFETs
|
OCR Scan
|
-200V,
FSL923AOD,
FSL923AOR
36MeV/mg/cm2
MIL-STD-750,
MIL-S-19500,
-160V,
500ms;
|
PDF
|
Untitled
Abstract: No abstract text available
Text: y*Rg*s FRE260D, FRE260R, FRE260H 31 A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 31 A, 200V, RDS on = 0.080£i TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
|
OCR Scan
|
FRE260D,
FRE260R,
FRE260H
O-258AA
100KRAD
300KRAD
1000KRAD
3000KRAD
O-258AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1332B International TOR Rectifier dv/dt RATED HEXFET TRANSISTOR IRHM7260 IRHM8260 REPETITIVE AVALANCHE AND N -C H A N N E L MEGA RAD HARD 200Volt, 0.070Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r ’ s R A D H A R D te c h n o lo g y
|
OCR Scan
|
1332B
IRHM7260
IRHM8260
200Volt,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: f f i h a r r is U U S E M I C O N D U C T O R FRF250D, FRF250R, F fí F2S0H 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 23A, 200V, RDS on = 0.115£1 TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
|
OCR Scan
|
FRF250D,
FRF250R,
O-254AA
100KRAD
300KRAD
1000KRAD
3000KRAD
MIL-S-19500
FRF250H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR F TO V C O N VERTER LOW COST M ULTI-FUNCTION ICs D E S C R IP T IO N The CS-2907/2917 S e rie s is d esig n ed for use in frequency-tovo ltag e c o n ve rsio n syste m s and is e s p e c ia lly su ita b le for tac h o m eter and m otor-speed-control a p p licatio n s. T h e 2907
|
OCR Scan
|
CS-2907/2917
-2907-N
CS-2907N14
CS-2907N8
CS-2917N14
CS-2917N8
-2917-N
-2917-M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FSL923A0D, FSL923A0R f f X R R /S Data Sheet 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs June 1999 File Num ber 4359.2 Features • 5A, -200V, rQg ONi = 0.670J2 • Total Dose The Discrete Products Operation of Harris has developed a
|
OCR Scan
|
FSL923A0D,
FSL923A0R
-200V,
670J2
1-800-4-HARRIS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: m HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL230 D, R, H 2N7275D, 2N7275R 2N7275H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 5A.200V, RDS(on) >0.500Q T0-205AF • Second Generation Rad Hard MOSFET Results From New Design Concept*
|
OCR Scan
|
FRL230
2N7275D,
2N7275R
2N7275H
T0-205AF
100KRAD
300KRAD
3000KRAD
632UIS
632PH0T0
|
PDF
|
Untitled
Abstract: No abstract text available
Text: y*Rg*s FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500£i TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
|
OCR Scan
|
FRL230D,
FRL230R,
FRL230H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: International I R Rectifier Provisional Data Sheet No. PD-9.1444A dv/dt RATED HEXFET TRANSISTOR IRHF731 OSE R E P E TITIV E AVALAN C HE A ND N -C H A N N EL S IN G L E E V E N T E F F E C T S E E R A D H A R D 400 Volt, 4.5Q, (SEE) RAD HARD HEXFET International R e ctifier’s (S E E ) RAD H AR D tech nolog y
|
OCR Scan
|
IRHF731
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P D - 91740 International I R Rectifier R EPETITIVE AVALANCHE AND dv/dt RATED IRHNB7360SE HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 400Volt, 0.20Q, (SEE) RAD HARD HEXFET International R e ctifie r’s (SEE) RAD H AR D te c h n o l
|
OCR Scan
|
IRHNB7360SE
400Volt,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: H a rris 2N7285D, 2N7285R SEMICONDUCTOR 2 REGISTRATION PENDING Currently Available as FRM240 D, R, H November 1994 t^ 7 2 Ô 5 H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 16A, 200V, RDS(on) = 0 .2 4 Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
|
OCR Scan
|
2N7285D,
2N7285R
FRM240
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
42PH0TC
|
PDF
|
|
|
equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:
|
OCR Scan
|
1-800-4HARRIS
equivalent data book of 10N60 mosfet
MC14016CP
GD4511
an-6466
CX 2859 SMD
74AC14 spice
6120* harris
HCF4018be
7028 SMD Transistor
spice irfbc40
|
PDF
|
TSS2J2A44S
Abstract: TSS1J41 TSS16J41S tnr471 TSS1G41 TSS25J41S TSS25J47S TSS16G41 TSS3G44S TSS-2J44S
Text: 3. RATINGS & METHOD OF USE 3.1 T hyristors 3.1.1 G ate triggering characteristics. Supplying a gate c u rre n t to such th y risto rs as SCRs, TRIA C s, e tc ., sw itches them from the o ff-state to th e on-state. T h y risto r gate characteristics include gate
|
OCR Scan
|
125x125x2m
TSS2J2A44S
TSS1J41
TSS16J41S
tnr471
TSS1G41
TSS25J41S
TSS25J47S
TSS16G41
TSS3G44S
TSS-2J44S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M I C R O S E H I CO RP / IdATERTOüJN 5ÜE D • POWER TRANSISTORS ^347^3 JAN, JAN, JAN, JAN, 2 Amp, 300V, Planar NPN D G I S M Ö R 127 M U N I T JANTX, JANTX, JANTX, JANTX, & & & & JANTXV JANTXV JANTXV JANTXV 2N5660 2N5661 2N5662 2N5663 FEATURES D E S C R IP T I O N
|
OCR Scan
|
2N5660
2N5661
2N5662
2N5663
MIL-S-19500/454
2N5660,
2N5661
25iTlA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1 ,0 43 ,5 7 5 W O R D x 4 B I T D Y N A M I C R A M * This ^ d a n c e d information and specifications are subject to change without notice. DESCRIPTION The TC514400JL/ZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as
|
OCR Scan
|
TC514400JL/ZL
TC514400JL/ZLâ
TC514400JUZLâ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1395 International S I Rectifier REPETETIVE AVALANCHE AND dv/dt RATED IR H M 9 2 3 0 HEXFET TRANSISTOR p -c h a n n e l RAD HARD Product Summary -200 Volt, 0.8Q, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology
|
OCR Scan
|
5545E
00235bb
|
PDF
|
Untitled
Abstract: No abstract text available
Text: H a rris 2N7294D, 2N7294R 21^7294H S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF250 D, R, H November 1994 R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 23A, 200V, RDS(on) = 0.115 ii TO-254AA
|
OCR Scan
|
2N7294D,
2N7294R
FRF250
100KRAD
300KRAD
1000KRAD
3000KRAD
35MeV/mg/cm2
7294H
O-254AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM244 D, R, H November 1994 2N7287D, 2N7287R 2N7287H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 12A, 250V, RDS(on) = 0.400Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
|
OCR Scan
|
FRM244
2N7287D,
2N7287R
2N7287H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
7643U
|
PDF
|
Untitled
Abstract: No abstract text available
Text: bSE f f CH} l S S i s SEMICONDUCTOR " " N 2 7 2 7 D , HARRIS SEMICOND SECTOR REGISTRATION PENDING Currently Available as FRS234 D, R, H 2 N 7 2 7 9 R 2 N 7 2 7 9 H Radiation Hardened N-Channel Power MOSFETs June1993 Package Features • 9 5A.250V, RDS(on)-0.715Q
|
OCR Scan
|
FRS234
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
O-257AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. D COPYRIGHT RELEASED FOR PUBUCATION ALL RIGHTS RESERVED. LO C D IS T R E V IS IO N S HB P DESCRIPTION LTR B1 AC: C olor - C O N N E C T IO N Rad £ DATE REVISED PER E C O -1 1-005140 DWN RK 26MAR11 APVD HMR D IA G R A M (BO TTO M VIEW
|
OCR Scan
|
ECO-11-005140
26MAR11
PT22A730B
PT22A700B
PT22A615B
PT22A600B
|
PDF
|
MA021
Abstract: diode piv OF 5000 VOLTS
Text: RECTIFIERS UT5105-UT5160 UT6105-UT6160 UT8105-UT8160 UT5105HR2-UT5160HR2 UT6105HR2-UT6160HR2 UT8105HR2-UT8160HR2 Standard Recovery, 7.5 Amp to 12 Amp DESCRIPTION These serie s of high cu rren t rectifiers offers opp ortu n ity for size an d w eight red u ction in high power sup plies.
|
OCR Scan
|
UT5105-UT5160
UT6105-UT6160
UT8105-UT8160
UT5105HR2-UT5150HR2
UT6105HR2-UT6160HR2
UT8105HR2-UT8160HR2
UT8105/8105HR2
UT6105/6105HR2
UT5105/5105HR2
UT8110/8110HR2
MA021
diode piv OF 5000 VOLTS
|
PDF
|
