P-CH MOSFET DEPLETION Search Results

P-CH MOSFET DEPLETION Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

P-CH MOSFET DEPLETION Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TRANSISTOR REPLACEMENT GUIDE Abstract: TRANSISTOR mos canal p HMA20 All in one TRANSISTOR REPLACEMENT GUIDE 4SR44 transistors mos mosfet canal p PX28 SK17 p channel de mosfet Text: MOSFET Analyser Model: HMA20 Operation E G AT RCE SO U AIN DR N EL HAN L N C ANNE P CH The HMA20 is an advanced Microcontrolled instrument that will quickly and easily analyse almost any enhancement mode MOSFET. With a press of the button, the Analyser will:	Original	HMA20 HMA20 80x56x25mm TRANSISTOR REPLACEMENT GUIDE TRANSISTOR mos canal p All in one TRANSISTOR REPLACEMENT GUIDE 4SR44 transistors mos mosfet canal p PX28 SK17 p channel de mosfet	PDF
IXTA02N100D2 Abstract: depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2 Text: Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero VGS=0V .	Original	AN-D16, IXTA02N100D2 depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2	PDF
10MQ100N Abstract: AN732 Si9121 Si9121DY Text: AN732 Vishay Siliconix Designing A High-Voltage Non-Isolated Buck-Boost Converter with the Si9121DY Nitin Kalje INTRODUCTION The Si9121DY is a non-isolated buck-boost converter IC, operating from a wide input voltage range of –10 to –60 V with minimal external components. This polarity inverter converts	Original	AN732 Si9121DY Si9121 BAS21 Efficiency--Si9121-5 04-May-00 10MQ100N AN732	PDF
igbt spice model Abstract: MOSFET IGBT THEORY AND APPLICATIONS shockley diode application GTO thyristor Curve properties HIGH VOLTAGE 3.3kv mosfet IGBT THEORY AND APPLICATIONS calculation of IGBT snubber shockley diode spice shockley diode SIEMENS THYRISTOR Text: Power Semiconductor Application Note AN_PSM2e IEEE Industry Applications Society Annual Meeting New Orleans, Louisiana, October 5-9, 1997 Parameter Extraction Methodology and Validation for an Electro-Thermal Physics-Based NPT IGBT Model J. Sigg, P. Türkes, R. Kraus*	Original	D-81739 D-85577 29July igbt spice model MOSFET IGBT THEORY AND APPLICATIONS shockley diode application GTO thyristor Curve properties HIGH VOLTAGE 3.3kv mosfet IGBT THEORY AND APPLICATIONS calculation of IGBT snubber shockley diode spice shockley diode SIEMENS THYRISTOR	PDF
TDA 16822 Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3 Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as	Original	B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3	PDF
SLUS452 Abstract: bq24700 product preview bq24700 Text: bq24700, bq24701 BATTERY CHARGE CONTROLLER AND SELECTOR WITH DPM ą SLUS452 – NOVEMBER 2000 D Dynamic Power Management, DPMt D D D D D D D ACDET ACPRES ACSEL BATDEP SRSET ACSET VREF ENABLE BATSET COMP ACN ACP 1 24 2 23 3 22 4 21 5 20 6 19 7 18 8 17 9 16	Original	bq24700 bq24701 SLUS452 300-kHz 24-Pin SLUS452 bq24700 product preview	PDF
AN211A Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide	Original	AN211A/D AN211A AN211A MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola	PDF
MPF102 equivalent transistor Abstract: MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET Text: AN211A/D Field Effect Transistors in Theory and Practice http://onsemi.com APPLICATION NOTE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or	Original	AN211A/D r14525 AN211A/D MPF102 equivalent transistor MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET	PDF
2N3797 Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide	Original	AN211A/D AN211A 2N3797 MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information VDSS = 500 V = 20 A ID25 RDS on = 0.33 Ω IXTH 20N50D High Voltage MOSFET N-Channel, Depletion Mode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	20N50D O-247 flam00	PDF
20N50D Abstract: 20n50 Text: High Voltage MOSFET N-Channel, Depletion Mode VDSS = 500 V = 20 A ID25 RDS on = 0.33 Ω IXTH 20N50D IXTT 20N50D Preliminary Data Sheet TO-247 (IXFH) Symbol Test Conditions Maximum Ratings V DSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C 500 V VGS	Original	20N50D O-247 O-268 20N50D 20n50	PDF
MPF102 JFET Abstract: motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN211A/D SEMICONDUCTOR APPLICATION NOTE AN211A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Field Effect Transistors in Theory	Original	AN211A/D AN211A MPF102 JFET motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet	PDF
mosfet discrete totem pole drive CIRCUIT Abstract: analog switch circuit using mosfet 1mhz ultrasound transducer circuit driver HT04 VN3205N8 solid state switch ic 120v mosfet discrete totem pole CIRCUIT HT0440 HV2216 LND150N8 Text: HT04 Series Application Note AN-D26 3 High Voltage Isolated MOSFET Driver high. The internal clock can be disabled by applying an external clock signal to the CLK pin. This allows the power dissipation and AC characteristics to be tailored to meet specific needs. The	Original	AN-D26 HT0440 clo-83 TN2540N8 mosfet discrete totem pole drive CIRCUIT analog switch circuit using mosfet 1mhz ultrasound transducer circuit driver HT04 VN3205N8 solid state switch ic 120v mosfet discrete totem pole CIRCUIT HV2216 LND150N8	PDF
HEXFET Power MOSFET designer manual Abstract: MOSFET designer manual BJT Gate Drive circuit POWER BJTs BJT with i-v characteristics BJT characteristics N-Channel jfet 200V depletion P-Channel Depletion Mosfet HEXFET Power MOSFET Designers Manual n channel silicon mosfet Text: Index Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different	Original		PDF

bfr84 Abstract: 71672 MSI MS-5 511 MOSFET Text: BFR84 J '-SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type fieid-effect transistor in a metal TO-72 envelope w ith source and substrate connected to the case, intended fo r a wide range o f v.h.f. applications, such as v.h.f. television tuners, f.m . tuners,	OCR Scan	BFR84 bbS3131 7Z67774. bfr84 71672 MSI MS-5 511 MOSFET	PDF
d150n Abstract: No abstract text available Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Order Number / Package I dss BVdgx (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0m A LN D 150N 3 LN D 150N 8 LN D 150N D * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.	OCR Scan	LND150 O-243AA* OT-89. d150n	PDF
Untitled Abstract: No abstract text available Text: S E M IC O N D U C T O R w w w .fa irc h ild s e m i.c o m tm RC5060 ACPI Switch Controller Features Applications • Implements ACPI control with PWROK, SLP_S3# and • Camino Platform ACPI Controller • Whitney Platform ACPI Controller SLP_S5# Description	OCR Scan	RC5060 RC5060 DS30005057	PDF
power MOSFET IRF740 driver circuit Abstract: h-bridge power MOSFET IRF740 working of mosfet IRF450 IRF510 SEC mosfet transistor IRF520 FET IRF730 Text: DESIGN RELIABILITY PREFACE PART 1-FAILURE MECHANISMS INTRODUCTION T h is a p p lic a tio n n o te d is c u s s e s w h y a n d h o w M O S FET devices fail in sw itch -m o d e applications. It de als w ith th e issue o f ruggedness in the design o f the device, and w ith system design strategies tha t can	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: TPS9103 POWER SUPPLY FOR GaAs POWER AMPLIFIERS SLVS131A - JULY 1996 Charge Pump Provides Negative Gate Bias for Depletion-Mode GaAs Power Amplifiers GATE_BIAS □ = 10 VCC C1c i+ BATTJN BATTJN BATTJN PGP PG GND 2 3 4 5 6 7 8 9 10 135-mli High-Side Switch Controls Supply	OCR Scan	TPS9103 SLVS131A 135-mli 20-Pln 10-ki2 TPS9103	PDF
IRFD1Z3 equivalent Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not	OCR Scan	VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit	PDF
Untitled Abstract: No abstract text available Text: USH5155; USH5156 ISOPOWER HIGH VOLTAGE Universal Semiconductor FEATURES • • • • • • 5 0 0 V Devices D ielectrically isolated Silicon gate C M O S/D M O S te ch n o lo g y Freedom fro m latch-up Ultra Low leakage Rad-Hard devices DESCRIPTION The U S H 5155 and U S H 5 1 5 6 are high voltage K it Parts de	OCR Scan	USH5155; USH5156 USH5155 3bfl341	PDF
1rf820 Abstract: LEM LT 308 N-Channel Depletion-Mode MOSFET high voltage S2000A Text: Tem ic AN707 S e m i c o n d u c t o r s Designing Low-Power Off-Line Flyback Converters Using the Si9120 Switchmode Controller IC by C ra ig V arga G e ttin g high efficien cy fro m lo w -p o w er o ff-lin e p o w er supplies has alw ay s p o sed d ifficulties fo r the d esign	OCR Scan	AN707 Si9120 J40401TC 1RF820 2N7000 LEM LT 308 N-Channel Depletion-Mode MOSFET high voltage S2000A	PDF
Motorola transistors MRF 947 Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that	OCR Scan	2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp	PDF
mosfet K 2865 Abstract: BF1107 ic sc 6200 passive loopthrough Text: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BF1107 Silicon N-channel single gate MOSFET 1998 A pr 07 P relim inary specification File under Discrete S em iconductors, SC 07 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification	OCR Scan	BF1107 115102/00/01/pp8 mosfet K 2865 BF1107 ic sc 6200 passive loopthrough	PDF

P-CH MOSFET DEPLETION Search Results

P-CH MOSFET DEPLETION Result Highlights (5)

P-CH MOSFET DEPLETION Datasheets Context Search

TRANSISTOR REPLACEMENT GUIDE

IXTA02N100D2

10MQ100N

igbt spice model

TDA 16822

SLUS452

AN211A

MPF102 equivalent transistor

2N3797

Untitled

20N50D

MPF102 JFET

mosfet discrete totem pole drive CIRCUIT

HEXFET Power MOSFET designer manual

bfr84

d150n

Untitled

power MOSFET IRF740 driver circuit

Untitled

IRFD1Z3 equivalent

Untitled

1rf820

Motorola transistors MRF 947

mosfet K 2865