P TYPE LASER DIODE Search Results

Contextual Info: MITSUBISHI LASER DIODES ML9XX12 SERIES In G a A s P -M Q W -D F B LASER DIODES TYPE NAME FEATURES DESCRIPTION ML9XX12 series are M Q W *—DFB” laser diodes emitting • W e ll suitable for 2.5Gb/s digital transmission with 1 .3 /im normal fiber 100km light beam around 1550nm.

Contextual Info: MITSUBISHI LASER DIODES ML4XX23 SERIES AIGaAs LASER DIODES TYPE NAME FEATURES DISCRIPTION M L4X X 23 is a AIG aA s laser diod es w hich p rovides a stable, •L o w single • S m a ll astig m atic distance tra nsverse m ode o scillatio n w ith em ission w avelength

ML7XX12

Abstract: optical CW LASER ingaasp
Contextual Info: MITSUBISHI LASER DIODES ML7XX12 SERIES e c V ic a ^ 0 0 , M0\ce 'n,5> ^r\c\\mrtsa so^p«ameW InGaAsP - M Q W - F P LASER DIODE ARRAYS TYPE NAME FEATURES DESCRIPTION ML7XX12 p ro vid e s series 12beam s are InGaAsP w ith stable, arrays which • l3 1 0 n m typical emission wavelength

SPL785-30-4-PD

Contextual Info: SPL785-30-4-PD TECHNICAL DATA Pigtailed Coaxial Laser Diode Features Applications • • • • • • 785 nm SM Fiber Coaxial package Built-in PD Medical laser treatment Printing Electrical Connection Pin Configuration Bottom View p-type PIN 1 2 3 Function

philips twin eye

Abstract: CQL20 t241 diode ftz869 diode code ae eg and g laser diode
Contextual Info: Philips Components CQL20 AIGaAs DOUBLE HETEROSTRUCTURE LASER-DIODE The C Q L 2 0 is designed for reading applications such as video/audio disc applications, optical memories, security systems etc. The index guided Buried Twin Ridge Substrate B T R S laser is constructed on a p-type gallium arsenide

ML961B8S

Abstract: S-25 1480 nm diode laser H Beam photodiode 1490 nm
Contextual Info: MITSUBISHI LASER DIODES ML9XX8 SERIES InG aA sP-M Q W HIGH POWER LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9X X8 serie s are InG aA sP high po w e r laser dio d e s w hich p ro vid e s a sta b le , single em is s io n w a v e le n g th of tra n s v e rs e

laser DFB 1550nm 10mW

Abstract: laser DFB 1550nm 10mW single laser DFB low beam divergence 1550nm 10mW laser diode 10mw 1550nm ML99213 ML9XX13 dfb 10mw DFB CATV 1550nm laser diode relative intensity noise R4045
Contextual Info: MITSUBISHI LASER DIODES ML9XX13 SERIES In G a A s P -M Q W -D F B LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9X X13 serie s are M Q W *— D F B * laser diod es em itting • E x c e lle n t low distortion cha racte ristic C S O typica l-55d B c/C T B typica l-60d B c

Contextual Info: SEMICONDUCTOR LASER POWER CONTROL 1C SEMICONDUCTOR New s SINGLE 5V POWER SUPPLY OPERATION ALLOWS HIGH-SPEED SWITCHING OF CATHODE COMMON-TYPE SEMICONDUCTOR LASER DIODES M66510P/FP 5v> vcc, C u rre n t S e ttin g In p u t 1 [T 1RO ] 2RO 1 ^ - * LD T7| V L2 — [ ] T

Contextual Info: Data Sheet DW902-P series November 2003 Polarization Beam Splitter/Combiner with PMF pigtail all ports Product type: DW902-P Applications High power laser diode multiplexing application for pumping source of EDFA and Raman amplifier in WDM network. Description

EU-38-PD

Contextual Info: EU-38-PD v 2.0 21.08.2014 Description EU-38-PD is a small and inexpensive driver board for continues wave CW operation. It is suitable for ntype, m-type and p-type laser diodes, and can be also used together with an external PD or without PD*. The output current can be easily adjusted up to 1 A. Two potentiometers enable to adjust the laser

thermistor 054

Contextual Info: OSHIBA LASER/FBR O P T I C OJ ]> T 0 1 7 2 5 2 O Q l t O l b 1 • TO SbT-41-07" ■ TOSHIBA LASER DIODE TOLD350 Features • • • • • Wavelength 1.55/iim InGaAsP/inP Buried-hetero Structure Chip-carrier Type High Speed High Reliability Package: A

Contextual Info: □IE D • 001 4 51 1 MITSUBISHI 321 ■ M I T 5 (D IS C R E T E SC MITSUBISHI LASER DIODES SERIES M L 2 X X 1 FOR OPTICAL COMMUNICATION TYPE NAME DESCRIPTION FEATURES ML2XX1 • Single longitudinal mode is a h ig h -P o w e r AIGaAs sem iconductor laser which provides a stable, single transverse mode

L9922

Contextual Info: blE D • DDmb7T T7fl I M IT S MITSUBISHI LASER DIODES ML9XX2 SERIES MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION TYPE NAME DESCRIPTION FEATURES M L9 X X 2 is a DFB (D is trib u te d Feedback) laser diode • L o w th re sh o ld c u rre n t ty p ic a l 2 0 m A

Contextual Info: group Advance Data Sheet September 1998 Lucent Technologies Bell Labs Innovations A370-Type Analog Uncooled FastLight Laser Module Features • Eight-pin fiat-PAC package suitable for CATV applications ■ Frequency range up to 1.5 GHz I■ ■ 1 Iflt ■ MQW F-P 1.3 |a,m laser with single-mode fiber

Contextual Info: HVU187 Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator Features • Low forward resistance. rf = 5.5 Ω max • Ultra small R esin P ackage (URP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code

HVU308A

Abstract: Hitachi DSA00358
Contextual Info: HVU308A Variable Capacitance Diode for TV tuner ADE-208-020B Z Rev 2 Nov. 1998 Features • Low series resistance. (rs=0.95Ωmax) • Ultra small R esin P ackage (URP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code

Contextual Info: MITSUBISHI LASER DIODES □□16244 7T4 PD7XX9 SERIES N°"c' . i i *1 S o n * P « 'a InGaAs PIN PHOTO DIODES TYPE NAME DESCRIPTION FEATURES P D 7 X X 9 series are InGaAs photodiode array which # has # <t> 4 0 u m active diam eter # 2 5 0 u m spacing betw een sensitive area

Contextual Info: MITSUBISHI LASER DIODES PD7XX11 SERIES P B t -ü £ S ¡S 5 ~ InGaAs PIN PHOTO DIODES TYPE NAME DESCRIPTION FEATURES PD7XX11 is an InGaAs pin photodiode which has a sensitive • H ig h speed response area of ¿ 2 0 j/m . • H ig h quantum efficiency PD7XX11

Contextual Info: blE ]> • beMTflET M ITSU B ISH I O G lM blb DISCRETE ñm ■ M IT 5 MITSUBISHI LASER DIODES ML6XX3A SERIES SC FOR OPTICAL INFORMATION SYSTEMS TYPE NAME M L 6 4 1 3 A , M L 6 4 1 3 C DESCRIPTION ML6XX3A which is a FEATURES h ig h -p o w e r semiconductor

TOLD300

Contextual Info: TOSHIBA CLASER/FBR OP TI C Dl » • lO T T M r S ïh iir M Ïm T TOSHIBA LASER DIODE TOLD300, TOLD300A, TOLD300E FEATU RES • Wavelength 1.31/im • InGaAsP/lnP Buried-Hetero Structure • Chip-Carrier Type • High Speed • High Reliability P a c k a g e :A

Contextual Info: ENGINEERING SPECIFICATIONS L.Ä T O T T O R ] S AN Y O E L E C T R O N I C S - 3 1 1 . T # U E L E C T R I C C S V T i i k l t n * [ f - S k i. 680 I CE C O . . L TD D I V I S I O N i - C k i J i p i o Date; July 30, 1990 LASER Type: DIODE SDL-7033-111 [T E N T A T IVE ]

N95 DIODE

Abstract: i300n receiver 1550 optics fiber-optics communication line FP 1550 B159-H7847
Contextual Info: PRODUCT BRIEF Bi - Di re c t i o n a l Mo d u I e B I D I P/N Laser Type W avelength (nm) Power (mW) Average Peak O perating Temp. Package D escription Range (deg. C) F u l l S e r v i c e A c c e s s N e t w o r k (F S A N ) S B H 5 24 i4 (x* ) FP 13 0 0 /15 5 0

PLD-500

Abstract: PLD-10 M317 pld connector trimpot horizontal PLD-5000
Contextual Info: PLD Series Laser Diode Drivers General Description Features The PLD Series Laser Diode Drivers combine the high performance you expect from a Wavelength component with two distinct improvements: low voltage operation from +5 V DC, and an Active Current Limit.

constant current led driver lm317

Abstract: trimpot 25 return 10k vertical PLD-10000 PLD-10 LED monitor repair PLD10K-CH PLD-500 laser bar driver trimpot 10k top adjust through hole trimpot horizontal
Contextual Info: e Pb RoHS Compliant PLD-10000 Laser Diode Driver GENERAL DESCRIPTION FEATURES The PLD-10000 Laser Diode Driver combines the high performance you expect from a Wavelength component with two distinct improvements: low voltage operation from +5 V DC, and an Active Current Limit.