8A SOT-89
Abstract: XP162A02D5PR
Text: XP162A02D5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.45Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A02D5PR is a P-Channel Power MOS FET with low on-state
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XP162A02D5PR
OT-89
XP162A02D5PR
OT-89
8A SOT-89
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XP162A02D5PR
Abstract: XP162A11C0PR XP162A12A6PR sot89 fet XP162A11
Text: XP162A02D5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.45Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A02D5PR is a P-Channel Power MOS FET with low on-state
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XP162A02D5PR
OT-89
XP162A02D5PR
OT-89
XP162A11C0PR
XP162A12A6PR
sot89 fet
XP162A11
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XP132A0265SR
Abstract: No abstract text available
Text: XP132A0265SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.065Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package • Applications ■ General Description ■ Features The XP132A0265SR is a P-Channel Power MOS FET with low on-state
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XP132A0265SR
XP132A0265SR
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XP132A01A0SR
Abstract: No abstract text available
Text: XP132A01A0SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.105Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package • Applications ■ General Description ■ Features The XP132A01A0SR is a P-Channel Power MOS FET with low on-state
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XP132A01A0SR
XP132A01A0SR
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XP162A01B5PR
Abstract: No abstract text available
Text: XP162A01B5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.25Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A01B5PR is a P-Channel Power MOS FET with low on-state
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XP162A01B5PR
OT-89
XP162A01B5PR
OT-89
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XP152A01D8MR
Abstract: No abstract text available
Text: XP152A01D8MR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.48Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-23 Package • Applications ■ General Description ■ Features The XP152A01D8MR is a P-Channel Power MOS FET with low on-state
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XP152A01D8MR
OT-23
XP152A01D8MR
OT-23
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XP132A0340SR
Abstract: 383 SOP-8
Text: XP132A0340SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.04Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package • Applications ■ General Description ■ Features The XP132A0340SR is a P-Channel Power MOS FET with low on-state
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XP132A0340SR
XP132A0340SR
383 SOP-8
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2715GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μPA2715GR is P-Channel MOS FET designed for power management applications of notebook computers and Li-ion battery protection circuit.
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PA2715GR
PA2715GR
PA2715GR-E1-ANote
PA2715GR-E2-ANote
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XP134A11A1SR
Abstract: No abstract text available
Text: XP134A11A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A11A1SR is a P-Channel Power MOS FET with low on-state
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XP134A11A1SR
XP134A11A1SR
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XP134A01A9SR
Abstract: No abstract text available
Text: XP134A01A9SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.19Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A01A9SR is a P-Channel Power MOS FET with low on-state
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XP134A01A9SR
XP134A01A9SR
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XP134A02A1SR
Abstract: XP134A11A1SR XP134A1275SR XP135A1145SR
Text: XP134A02A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A02A1SR is a P-Channel Power MOS FET with low on-state
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XP134A02A1SR
XP134A02A1SR
Vds10V
XP134A11A1SR
XP134A1275SR
XP135A1145SR
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sot89-3
Abstract: No abstract text available
Text: MOS FET P-CHANNEL POWER MOS FET FOR SWITCHING The S-90P series is a P-channel power MOS FET that realizes low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection
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S-90P
OT-23-3
OT-89-3
OT-23-3,
OT-89-3
S-90P0112SMA
S-90P0222SUA
S-90P0332SUA
sot89-3
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G1133
Abstract: C10535E C10943X MEI-1202 6 PIN case mos fet p-channel uPA1523BH
Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1523B P-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION The µPA1523B is P-channel Power MOS FET Array that built PACKAGE DIMENSIONS in millimeters in 4 circuits designed for solenoid, motor and lamp driver.
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PA1523B
PA1523B
PA1523BH
G1133
C10535E
C10943X
MEI-1202
6 PIN case mos fet p-channel
uPA1523BH
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PA1523BH
Abstract: TEA-1037 C10535E C10943X MEI-1202 TEA-1035
Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR mPA1523B P-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION The mPA1523B is P-channel Power MOS FET Array that built PACKAGE DIMENSIONS in millimeters in 4 circuits designed for solenoid, motor and lamp driver.
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PA1523B
PA1523B
PA1523BH
TEA-1037
C10535E
C10943X
MEI-1202
TEA-1035
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uPA2715
Abstract: UPA2715GR M15022
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2715GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2715GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook
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PA2715GR
PA2715GR
uPA2715
UPA2715GR
M15022
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dc m13
Abstract: PT22
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2718GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2718GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook
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PA2718GR
PA2718GR
dc m13
PT22
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2719GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2719GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook
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PA2719GR
PA2719GR
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2717GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2717GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook
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PA2717GR
PA2717GR
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2715GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2715GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook
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PA2715GR
PA2715GR
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2SJ202
Abstract: 2SK1580
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ202 P-CHANNEL MOS FET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SJ202 is a P-channel vertical type MOS FET which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require
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2SJ202
2SJ202
2SK1580
2SK1580
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C11892E
Abstract: D12971E D1297 2SJ494 TEA-1035
Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. 4.5±0.2
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2SJ494
C11892E
D12971E
D1297
2SJ494
TEA-1035
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PA1770
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1770 SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The µPA1770 is a P-channel MOS Field Effect Transistor designed for power management applications of portable machines.
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PA1770
PA1770
PA1770G
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Untitled
Abstract: No abstract text available
Text: COMPOUND FIELD EFFECT POWER TRANSISTOR PA1527 P-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION PACKAGE DIMENSIONS The ¿¿PA1527 is P-channel Power MOS FET Array that built in 4 in millim eters circuits designed for solenoid, motor and lamp driver.
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PA1527
PA1527
/iPA1527H
10-Pin
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Untitled
Abstract: No abstract text available
Text: _ DATA SHEET_ MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.
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2SJ494
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