Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P04 Power MOSFET 40A, 21V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced
|
Original
|
UTT30P04
UTT30P04
O-252
UTT30P04L-TN3-R
UTT30P04G-TN3-R
QW-R502-613
|
PDF
|
613 MOSFET
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P04 Power MOSFET 40A, 21V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced
|
Original
|
UTT30P04
UTT30P04
O-252
UTT30P04L-TN3-R
UTT30P04G-TN3-R
QW-R502-613
613 MOSFET
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF5210 POWER MOSFET -40A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5210 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.
|
Original
|
UF5210
-100V
UF5210
O-220
UF5210L-TA3-T
UF5210G-TA3-T
QW-R502-845
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECH8668 Ordering number : ENA1510 SANYO Semiconductors DATA SHEET ECH8668 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
|
Original
|
ENA1510
ECH8668
ECH8660
PW10s,
900mm2
A1510-6/6
|
PDF
|
ECH8668
Abstract: ECH8660 a15102
Text: ECH8668 Ordering number : ENA1510 SANYO Semiconductors DATA SHEET ECH8668 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
|
Original
|
ECH8668
ENA1510
ECH8660
A1510-6/6
ECH8668
a15102
|
PDF
|
ENA1510A
Abstract: a15102 40v 7.5a P-Channel N-Channel
Text: ECH8668 Ordering number : ENA1510A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8668 General-Purpose Switching Device Applications Features • • • • The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
|
Original
|
ENA1510A
ECH8668
ECH8668
PW10s,
A1510-8/8
ENA1510A
a15102
40v 7.5a P-Channel N-Channel
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECH8668 Ordering number : ENA1510A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8668 General-Purpose Switching Device Applications Features • • • • The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
|
Original
|
ECH8668
ENA1510A
ECH8668
A1510-8/8
|
PDF
|
ECH8608
Abstract: No abstract text available
Text: ECH8608 Ordering number : ENN8179 N-Channel and P-Channel Silicon MOSFETs ECH8608 General-Purpose Switching Device Applications Features • • The ECH8608 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.
|
Original
|
ECH8608
ENN8179
ECH8608
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1510A ECH8668 Power MOSFET http://onsemi.com 20V, 7.5A, 17mΩ, –20V, –5A, 38mΩ, Complementary Dual ECH8 Features • • • • The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
|
Original
|
ENA1510A
ECH8668
ECH8668
PW10s,
900mm2
A1510-8/8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1777A ECH8661 Power MOSFET http://onsemi.com 30V, 7A, 24mΩ, –30V, –5.5A, 39mΩ, Complementary Dual ECH8 Features • • • • • ON-resistance Nch: RDS on 1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.) The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
|
Original
|
ENA1777A
ECH8661
ECH8661
PW10s,
A1777-9/9
|
PDF
|
AON7407
Abstract: No abstract text available
Text: AON7407 20V P-Channel MOSFET General Description Product Summary The AON7407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
|
Original
|
AON7407
AON7407
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AP4407I-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS D RDS ON Simple Drive Requirement Fast Switching Characteristic ID G -30V 14m -40A RoHS Compliant & Halogen-Free S Description
|
Original
|
AP4407I-HF
O-220CFM
100us
100ms
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AP4435GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D Lower On-resistance RDS ON Fast Switching Characteristic ID RoHS Compliant & Halogen-Free -30V 20m -40A G S Description
|
Original
|
AP4435GH/J-HF
O-252
AP4435GJ)
O-25ge
100us
100ms
|
PDF
|
T1341
Abstract: No abstract text available
Text: SFT1341 Ordering number : ENA1444 SANYO Semiconductors DATA SHEET SFT1341 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings
|
Original
|
ENA1444
SFT1341
PW10s)
PW10s,
A1444-4/4
T1341
|
PDF
|
|
|
ON285
Abstract: SUR50N03-12P
Text: SPICE Device Model SUR50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
SUR50N03-12P
0-to10
21-Jan-04
ON285
SUR50N03-12P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot
|
Original
|
FRK9160D,
FRK9160R,
FRK9160H
-100V,
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
|
PDF
|
ON285
Abstract: SUD50N03-12P
Text: SPICE Device Model SUD50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
SUD50N03-12P
0-to10V
26-Aug-03
ON285
SUD50N03-12P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECH8654 Ordering number : ENA0981A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8654 General-Purpose Switching Device Applications Features • • Low ON-resistance Halogen free compliance • • 1.8V drive Protection diode in Specifications
|
Original
|
ENA0981A
ECH8654
PW10s,
900mm2
A0981-7/7
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECH8309 Ordering number : ENA1418A SANYO Semiconductors DATA SHEET ECH8309 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter
|
Original
|
ENA1418A
ECH8309
PW10s,
900mm2
A1418-4/4
|
PDF
|
A1429
Abstract: 95A MARKING
Text: ECH8320 Ordering number : ENA1429A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8320 General-Purpose Switching Device Applications Features • • • • Low ON-resistance 1.8V drive Halogen free compliance Protection diode in Specifications
|
Original
|
ENA1429A
ECH8320
PW10s,
900mm2
011A-002
ECH8320-TL-H
A1429-7/7
A1429
95A MARKING
|
PDF
|
41410
Abstract: No abstract text available
Text: ECH8309 Ordering number : ENA1418A SANYO Semiconductors DATA SHEET ECH8309 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter
|
Original
|
ECH8309
ENA1418A
900mm2
PW10s,
A1418-4/4
41410
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ECH8315 Ordering number : ENA1387A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8315 General-Purpose Switching Device Applications Features • • • • Low ON-resistance 4V drive Halogen free compliance Protection diode in Specifications
|
Original
|
ECH8315
ENA1387A
900mm2Ã
A1387-7/7
|
PDF
|
GC 72 smd diode
Abstract: smd code marking gC SOT-23 smd marking gc diode bad sot23 smd 1p sot-23 smd diode marking 1P MARKING tAN SOT-23 diode
Text: PD - 9.1413C International I R Rectifier IRLMS5703 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET Vqss = *30V R D S (o n ) = 0 . 2 0 Q Description Fifth Generation HEXFETs from International Rectifier
|
OCR Scan
|
1413C
IRLMS5703
OT-23.
GC 72 smd diode
smd code marking gC SOT-23
smd marking gc diode
bad sot23
smd 1p sot-23
smd diode marking 1P
MARKING tAN SOT-23 diode
|
PDF
|
OM6034NM
Abstract: OM6035NM OM6036NM OM6106
Text: OM6034NM OM6036NM OM6Q35NM OM6Q37NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Am p, N-Channel MOSFET In A S urface M ount Package FEATURES • • • • • • Surface Mount Hermetic Package High Current/Low RDS on Fast Switching, Low Drive Current
|
OCR Scan
|
OM6Q35NM
OM6036NM
OM6Q37NM
MIL-S-19500,
300/isec,
534-5776FAX
OM6034NM
OM6035NM
OM6106
|
PDF
|
