STC4567
Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR mosfet 10V 10A N and P MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Text: STC4567 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance
|
Original
|
STC4567
STC4567
-40V/-7
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
mosfet 10V 10A
N and P MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT30P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE FEATURES * RDS ON < 40mΩ @ VGS=-10V, ID =-10A RDS(ON) < 60mΩ @ VGS=-4.5V, ID =-10A * Low Capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified
|
Original
|
UT30P03
O-252
UT30P03L-TN3-T
UT30P03L-TN3-R
UT30P03G-TN3-T
UT30P03G-TN3-R
QW-R502-335
|
PDF
|
STC4614
Abstract: P channel MOSFET 10A MOSFET 10A AIDM-25 stc46 N and P MOSFET
Text: 614 STC4 STC4614 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching
|
Original
|
STC4614
STC4614
0V/10A,
VTC4614
P channel MOSFET 10A
MOSFET 10A
AIDM-25
stc46
N and P MOSFET
|
PDF
|
4505ss
Abstract: A1770 24V 1A mosfet
Text: CYStech Electronics Corp. Spec. No. : C439Q8 Issued Date : 2009.02.19 Revised Date : Page No. : 1/8 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4505Q8 BVDSS ID RDSON max N-CH 30V 10A 14mΩ P-CH -30V -8.4A 20mΩ Description The MTC4505Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8
|
Original
|
C439Q8
MTC4505Q8
MTC4505Q8
UL94V-0
4505ss
A1770
24V 1A mosfet
|
PDF
|
RFM10P12
Abstract: RFM10P15 TA940 RFP10P12 RFP10P15 TB334
Text: RFP10P15 Data Sheet -10A, -150V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching
|
Original
|
RFP10P15
-150V,
-150V
TA9404.
RFM10P12
RFM10P15
TA940
RFP10P12
RFP10P15
TB334
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STP4407 P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
|
Original
|
STP4407
STP4407
-30V/-10A,
-30V/-6
|
PDF
|
P channel MOSFET 10A
Abstract: STP4435A MOSFET 10A
Text: STP4435A P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
|
Original
|
STP4435A
STP4435A
-30V/-9
-30V/-7
P channel MOSFET 10A
MOSFET 10A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STP4435 P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
|
Original
|
STP4435
STP4435
-30V/-9
-30V/-7
packa2007,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APM9938K Dual Enhancement Mode MOSFET N- and P-Channel Features • Pin Description D1 D1 D2 D2 N-Channel 20V/10A, RDS(ON)=13mΩ (typ.) @ VGS=4.5V RDS(ON)=22mΩ (typ.) @ VGS=2.5V • S1 G1 S2 G2 P-Channel -20V/-6A, Top View of SOP-8 RDS(ON)=35mΩ (typ.) @ VGS=-4.5V
|
Original
|
APM9938K
0V/10A,
-20V/-6A,
APM9938
JESD-22,
|
PDF
|
AP3310GH
Abstract: No abstract text available
Text: AP3310GH/J-HF RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ 2.5V Gate Drive Capability BVDSS -20V RDS ON 150mΩ ID ▼ Fast Switching Characteristic G -10A S Description
|
Original
|
AP3310GH/J-HF
O-252
O-251
Cur150
AP3310GH
|
PDF
|
3310GH
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP3310GH/J-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Fast Switching Characteristics BV DSS 2.5V Gate Drive Capability R DS ON G RoHS-compliant, halogen-free -20V 150mΩ ID -10A S Description
|
Original
|
AP3310GH/J-HF-3
O-252
AP3310GH-HF-3
O-252
O-251
AP3310GJ-HF-3)
O-251
AP3310
3310GJ
3310GH
|
PDF
|
4513GH
Abstract: AP4513GH
Text: AP4513GH RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 35V RDS ON ▼ Good Thermal Performance 42mΩ ID ▼ Fast Switching Performance S1 G1 10A P-CH BVDSS
|
Original
|
AP4513GH
O-252-4L
O-252
4513GH
4513GH
AP4513GH
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AP4513GH RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 35V RDS ON ▼ Good Thermal Performance 42mΩ ID ▼ Fast Switching Performance S1 G1 10A P-CH BVDSS
|
Original
|
AP4513GH
O-252-4L
100us
100ms
|
PDF
|
ISOPLUS247
Abstract: 16P60P
Text: Preliminary Technical Information PolarPTM Power MOSFET IXTR16P60P VDSS ID25 RDS on = - 600V = - 10A ≤ 790mΩ Ω P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600
|
Original
|
IXTR16P60P
ISOPLUS247
E153432
100ms,
16P60P
ISOPLUS247
16P60P
|
PDF
|
|
|
GJ3310
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/12/05 REVISED DATE : GJ3310 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -20V 150m -10A Description The GJ3310 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
|
Original
|
GJ3310
GJ3310
O-252
O-252
|
PDF
|
AP4513GH
Abstract: No abstract text available
Text: AP4513GH Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 ▼ Good Thermal Performance 35V RDS ON ▼ Fast Switching Performance 42mΩ ID S1 G1 10A P-CH BVDSS
|
Original
|
AP4513GH
O-252-4L
100ms
AP4513GH
|
PDF
|
GI3403
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/02/25 REVISED DATE : GI3403 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 200m -10A Description The GI3403 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
|
Original
|
GI3403
GI3403
O-251
O-251
|
PDF
|
GJ3403
Abstract: 24v 6A mosfet
Text: Pb Free Plating Product ISSUED DATE :2005/02/25 REVISED DATE : GJ3403 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 200m -10A Description The GJ3403 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
|
Original
|
GJ3403
GJ3403
O-252
O-252
24v 6A mosfet
|
PDF
|
3310GH
Abstract: 3310G 3310GH datasheet 3310-G AP3310GH marking code E2 and gate AP3310GHJ 3310GJ
Text: AP3310GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ 2.5V Gate Drive Capability ▼ Fast Switching Characteristic BVDSS -20V RDS ON 150mΩ ID G -10A S Description Advanced Power MOSFETs from APEC provide the
|
Original
|
AP3310GH/J
O-252
O-251
O-251
3310GJ
3310GH
3310G
3310GH datasheet
3310-G
AP3310GH
marking code E2 and gate
AP3310GHJ
3310GJ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMP2018LFK P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits RDS on max ID TA = 25°C 16mΩ @ VGS = -4.5V -12.8A 25mΩ @ VGS = -2.0V -10A V(BR)DSS • • • • • • • -20V Description and Applications Low On-Resistance Low Input Capacitance
|
Original
|
DMP2018LFK
AEC-Q101
DS35357
|
PDF
|
AP3310GH
Abstract: No abstract text available
Text: AP3310GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D -20V RDS ON 2.5V Gate Drive Capability Fast Switching Characteristic 150m ID G -10A S Description Advanced Power MOSFETs from APEC provide the designer with the
|
Original
|
AP3310GH/J
O-252
O-251
AP3310GH
|
PDF
|
DMP2018LFK
Abstract: code diode transient DMP2018LFK-7 DS3535
Text: DMP2018LFK P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits RDS on max ID TA = 25°C 16mΩ @ VGS = -4.5V -12.8A 25mΩ @ VGS = -2.0V -10A V(BR)DSS • • • • • • • -20V Description and Applications Low On-Resistance Low Input Capacitance
|
Original
|
DMP2018LFK
AEC-Q101
DS35357
DMP2018LFK
code diode transient
DMP2018LFK-7
DS3535
|
PDF
|
PA102FDG
Abstract: No abstract text available
Text: Single P-channel MOSFET ELM32413LA-S •General description ■Features ELM32413LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-20V Id=-10A Rds(on) < 115mΩ (Vgs=-4.5V) Rds(on) < 180mΩ (Vgs=-2.5V)
|
Original
|
ELM32413LA-S
ELM32413LA-S
PA102FDG
O-252
PA102FDG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • P-channel Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)
|
Original
|
ELM35603KA-S
ELM35603KA-S
P2204ND5G
O-252-5
May-03-2006
|
PDF
|
