Untitled
Abstract: No abstract text available
Text: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description AP10N70 series are specially designed as main switching devices for
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AP10N70R/P
AP10N70
265VAC
O-220
O-262
O-220
10N70R
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Untitled
Abstract: No abstract text available
Text: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for
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AP10N70R/P
AP10N70
265VAC
O-220
O-262
O-220
10N70R
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PDF
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Untitled
Abstract: No abstract text available
Text: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for
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AP10N70R/P
AP10N70
265VAC
O-220
O-262
O-220
100us
100ms
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PDF
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IR21084
Abstract: IR21084S IR2108 IR2108S MS-012AA MS-012AB mosfet te 2304
Text: Data Sheet No. PD60161-P IR2108 4 (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Packages Fully operational to +600V 14-Lead SOIC Tolerant to negative transient voltage 8-Lead SOIC IR21084S IR2108S dV/dt immune • Gate drive supply range from 10 to 20V
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PD60161-P
IR2108
14-Lead
IR21084S
IR2108S
IR21084
IR2108
540ns
MS-012AA)
IR21084
IR21084S
IR2108S
MS-012AA
MS-012AB
mosfet te 2304
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PDF
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IXTH10P60
Abstract: No abstract text available
Text: Power MOSFETs IXTT10P60 IXTH10P60 VDSS ID25 RDS on = = ≤ - 600V - 10A Ω 1Ω P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTT10P60
IXTH10P60
O-268
100ms
10P60
7X-L69
IXTH10P60
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PDF
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Untitled
Abstract: No abstract text available
Text: IXTH10P60 IXTT10P60 Standard Power MOSFETs VDSS ID25 RDS on = = ≤ - 600V - 10A Ω 1Ω P-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH10P60
IXTT10P60
O-268
062in.
O-247)
O-268
O-247
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: Surface Raceway PAN -WAY SURFACE RACEWAY For Power and Communication Cabling PAN-WAY™ Raceway Systems meet or exceed the UL-5A testing standard. • Used to route, protect, and conceal voice, data, fiber optic and video cabling • Can be used with PAN-NET ™ Network Cabling System
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Twin-70,
SA101N60B-LP
TWIN-70
RJBX3510IW
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PDF
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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PDF
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40w fluorescent lamp inverter circuit
Abstract: FL10KM12A FL10KM-12A
Text: MITSUBISHI Nch POWER MOSFET ARY FL10KM-12A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FL10KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2
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FL10KM-12A
40w fluorescent lamp inverter circuit
FL10KM12A
FL10KM-12A
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2SK2528-01
Abstract: LFT 5A
Text: FU JI 2SK2528-01 N-channel MOS-FET ö ü J M e ir u ö L J K FAP-II Series 900V 3 ,6 Q 5A 80W > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof > Applications
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OCR Scan
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2SK2528-01
EE3fl715
0004b53
LFT 5A
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PDF
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Untitled
Abstract: No abstract text available
Text: F U J I lá lU M e L T L M J É 2 S K 2 5 2 7 -0 1 M R N-channel MOS-FET FAP-II Series 900V 5A 40W > Outline Drawing > Features - 3,6£2 High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof
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PDF
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Untitled
Abstract: No abstract text available
Text: PU J1 2SK2528-01 N-channel MOS-FET ö t ö lS U 'U ä U K FAP-II Series 900V > Features 3,6 0 . 5A Outline Drawing TO-3P - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof
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2SK2528-01
10D0D
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PDF
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Untitled
Abstract: No abstract text available
Text: F U J I [M Ü J M e u M ] ü ¡ N-channel MOS-FET 2 S K 2 3 9 7 -0 1 M R FAP-II Series 800V 2,3£2 5A 50 W > Outline Drawing > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - Vgs = ± 30V Guarantee
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MIG5Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG5Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage : 30 5A/1200V IGBT •
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MIG5Q805H
A/1200V
/l600V
961001EAA1
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PDF
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DIODE T25 4 d0
Abstract: diode t25 4 L0 2SK2526-01
Text: FU JI 2SK2526-01 N-channel MOS-FET 900V 3,6£2 5A 60W FAP-II Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2526-01
O-220AB
E2367TE
DIODE T25 4 d0
diode t25 4 L0
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PDF
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK1943-01 N-channel MOS-FET FAP-IIA Series 900V > Features 2 ,8 Q 5A 80W > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof > Applications
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2SK1943-01
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PDF
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DS800
Abstract: 2SK2397-01MR
Text: F U JI nuMEirijajG 2SK2397-01MR N-channel MOS-FET FAP-II Series 800V > Features - 2,3 a 5A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications
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2SK2397-01MR
20Ki2)
DS800
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PDF
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2528-01 N-channel MOS-FET FAP-II Series 900V > Features - 3 ,6 Q 5A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof TO-3P 4.5 > Applications
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2SK2528-01
0D04b53
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PDF
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2397-01MR N-channel MOS-FET FAP-II Series > Features - 2,3H 80 0V 5A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2397-01MR
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PDF
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diode U1J
Abstract: 2SK2866 10A 600V MOS toshiba U1J 550 U1J diode U1J ON semiconductor diode U1J ON ON U1J 2-10P1B on semiconductor U1J
Text: TOSHIBA 2SK2866 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2866 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS : RßS (ON) = 0-540 (Typ.)
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2SK2866
VDD-400V,
diode U1J
2SK2866
10A 600V MOS
toshiba U1J
550 U1J
diode U1J ON semiconductor
diode U1J ON
ON U1J
2-10P1B
on semiconductor U1J
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FS10UM12
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS10UM-12 HIGH-SPEED SWITCHING USE FS10UM-12 •■600V • 0.94Q 10A • V d s s . • TDS ON (MAX) • I d . APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per
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FS10UM-12
FS10UM12
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK10SM-12 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 tp 2.8 • VOSS . 600V • TDS ON (MAX) . 1.18Q
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FK10SM-12
150ns
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2866 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2866 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 03.6 ± 0.2 10.3MAX-
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2SK2866
0-54n
--10A,
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK10VS-12 HIGH-SPEED SWITCHING USE FK10VS-12 •V o s s . 600V • TDS ON (MAX) .1 . 1 8 0
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FK10VS-12
150ns
571C2
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PDF
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