STMicroelectronics marking code date
Abstract: Date Code Marking STMicroelectronics stmicroelectronics datecode STMicroelectronics date CODE Part Marking STMicroelectronics STMicroelectronics date marking CODE marking code stmicroelectronics STMicroelectronics code date marking DATE code stmicroelectronics STMicroelectronics PRODUCT code date
Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN DSG/ CT/ 0C27 CATANIA, Jul 17th 2000 DSG Discrete and Standard Circuits Group Catania POWER MOS SILICON LINE CHANGE FOR THE INDUSTRY STANDARDS: IRF820 INVOLVED P&L FAMILY: 29 PRODUCT FAMILY: POWER MOSFETs WHAT : FOLLOWING UP THE DIVISIONAL PROGRAM AIMED AT DEVELOPING NEW
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IRF820
O-220
DSG/CT/0C27
OP271/272
STMicroelectronics marking code date
Date Code Marking STMicroelectronics
stmicroelectronics datecode
STMicroelectronics date CODE
Part Marking STMicroelectronics
STMicroelectronics date marking CODE
marking code stmicroelectronics
STMicroelectronics code date marking
DATE code stmicroelectronics
STMicroelectronics PRODUCT code date
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RD10
Abstract: WTV3585
Text: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change
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WTV3585
03-Apr-07
RD10
WTV3585
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Untitled
Abstract: No abstract text available
Text: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change
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WTV3585
OT-26
03-Apr-07
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INJ0003AC1
Abstract: INJ0003AT2 INJ0003AU1 INJ0003AX SC-75A INJ0003AM1
Text: ＩＮJ0003AＸ SERIES ・PRELIMINARY High speed switching Silicon P-channel MOSFET Notice: This is not a final specification Some parametric are subject to change. OUTLINE DRAWING DESCRIPTION INJ0003AX is a Silicon P-channel MOSFET. This product is most suitable for low voltage
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J0003A
INJ0003AX
INJ0003AT2
INJ0003AM1
INJ0003AC1
INJ0003AT2
INJ0003AU1
SC-75A
INJ0003AM1
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MAX891L
Abstract: MAX891LEUA MAX892L MAX892LEUA
Text: ADVANCE INFORMATION All information in this data sheet is preliminary and subject to change. 10/96 Current-Limited, High-Side P-Channel Switches with Thermal Shutdown The MAX891L/MAX892L smart, low-voltage, P-channel, MOSFET power switches are intended for high-side
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MAX891L/MAX892L
500mA
250mA,
500mA
250mA
MAX891L
MAX892L
MAX891L
MAX891LEUA
MAX892L
MAX892LEUA
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INJ0002AC1
Abstract: INJ0002AM1 INJ0002AT2 INJ0002AU1 INJ0002AX SC-75A
Text: ＩＮJ0002AＸ SERIES ・PRELIMINARY High speed switching Silicon P-channel MOSFET Notice: This is not a final specification Some parametric are subject to change. OUTLINE DRAWING DESCRIPTION INJ0002AX is a Silicon P-channel MOSFET. This product is most suitable for low voltage
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J0002A
INJ0002AX
INJ0002AT2
INJ0002AM1
INJ0002AC1
INJ0002AM1
INJ0002AT2
INJ0002AU1
SC-75A
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INJ0001AC1
Abstract: INJ0001AM1 INJ0001AT2 INJ0001AU1 SC-75A
Text: ＩＮJ0001AＸ SERIES ・PRELIMINARY High speed switching Silicon P-channel MOSFET Notice: This is not a final specification Some parametric are subject to change. OUTLINE DRAWING DESCRIPTION INJ0001AＸ is a Silicon P-channel MOSFET. This product is most suitable for low voltage
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J0001A
INJ0001A
INJ0001AT2
INJ0001AM1
INJ0001AC1
INJ0001AM1
INJ0001AT2
INJ0001AU1
SC-75A
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INJ0011AM1
Abstract: INJ0011AC1 INJ0011AT2 INJ0011AU1 SC-75A INJ0011A
Text: ＩＮJ0011AＸ SERIES ・PRELIMINARY High speed switching Silicon P-channel MOSFET Notice: This is not a final specification Some parametric are subject to change. OUTLINE DRAWING DESCRIPTION INJ0011AＸ is a Silicon P-channel MOSFET. This product is most suitable for low voltage
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J0011A
INJ0011A
INJ0011AT2
INJ0011AM1
INJ0011AM1
INJ0011AC1
INJ0011AT2
INJ0011AU1
SC-75A
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MDS9753E
Abstract: Power MOSFET SO-8 Complementary N-P channel N-P Channel mosfet
Text: Preliminary – Subject to change without notice Complementary N-P Channel Trench MOSFET General Description Features The MDS9753E uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability.
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MDS9753E
MDS9753E
Power MOSFET SO-8 Complementary N-P channel
N-P Channel mosfet
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MDS9651
Abstract: N-P Channel mosfet Power MOSFET SO-8 Complementary N-P channel
Text: Preliminary – Subject to change without notice Complementary N-P Channel Trench MOSFET General Description Features The MDS9651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability
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MDS9651
MDS9651
N-P Channel mosfet
Power MOSFET SO-8 Complementary N-P channel
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0342F
Abstract: MAGNACHIP MDS7331 trench mosfet
Text: Preliminary – Subject to change without notice Dual P-Channel Trench MOSFET 20V, 3.8A General Description Features The MDS7331 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
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MDS7331
MDS7331
0342F
MAGNACHIP
trench mosfet
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MDH3331
Abstract: P-channel Trench MOSFET MagnaChip Semiconductor MOSFET dynamic
Text: Preliminary – Subject to change without notice P-Channel Trench MOSFET 20V, 3.8A, 70mΩ General Description Features The MDH3331 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability.
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MDH3331
OT-23
MDH3331
P-channel Trench MOSFET
MagnaChip Semiconductor
MOSFET dynamic
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Untitled
Abstract: No abstract text available
Text: Preliminary – Subject to change without notice P-Channel Trench MOSFET -30V, -5.3A, 35mΩ General Description Features The MDS3651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent
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MDS3651
MDS3651â
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MDD9754
Abstract: MDD-9754
Text: Preliminary – Subject to change without notice Dual Enhancement N-P Channel Trench MOSFET General Description Features The MDD9754 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability
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MDD9754
MDD9754â
MDD-9754
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FA7738N
Abstract: fa7738 fuji capacitor FA7738P 3.1v ZENER DIODE PWM controller sop-8 SD833-06 JESD51-5
Text: FA7738N/P FA7738N/P Application Note July-2006 Fuji Electric Device Technology Co.,Ltd. 1 FA7738N/P WARNING 1. This Data Book contains the product specifications, characteristics, data, materials, and structures as of July 2006. The contents are subject to change without notice for specification changes or other
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FA7738N/P
July-2006
FA7738N
fa7738
fuji capacitor
FA7738P
3.1v ZENER DIODE
PWM controller sop-8
SD833-06
JESD51-5
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MDS3651
Abstract: MDS365 mds3651r p-channel 60V 100A MOSFET
Text: Preliminary – Subject to change without notice Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ General Description Features The MDS3651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability
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MDS3651
MDS3651
MDS365
mds3651r
p-channel 60V 100A MOSFET
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GTT6405
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2007/01/17 REVISED DATE : GTT6405 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID -30V 52m -5.0A Description The GTT6405 uses advanced trench technology to provide excellent on-resistance with low gate change.
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GTT6405
GTT6405
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G3407
Abstract: No abstract text available
Text: Pb Free Plating Product CORPORATION G3407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2007/01/15 REVISED DATE : BVDSS RDS ON ID -30V 52m -4.1A Description The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change.
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G3407
G3407
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d13n3
Abstract: LTC2153-14 LTC2153UJ-14 sck 124 442 LTC2153C LTC2153CUJ-14 LTC2153I LTC2153IUJ-14 voltage stabilizer schematic diagram mark d13n
Text: Electrical Specifications Subject to Change LTC2153-14 14-Bit 310Msps ADC Features Description 68.8dBFS SNR n 88dB SFDR n Low Power: 401mW Total n Single 1.8V Supply n DDR LVDS Outputs n Easy-to-Drive 1.32V P-P Input Range n 1.25GHz Full Power Bandwidth S/H
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LTC2153-14
14-Bit
310Msps
n88dB
401mW
25GHz
12-Bit
n40-Lead
d13n3
LTC2153-14
LTC2153UJ-14
sck 124 442
LTC2153C
LTC2153CUJ-14
LTC2153I
LTC2153IUJ-14
voltage stabilizer schematic diagram
mark d13n
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onsemi 035 Schottky diode
Abstract: diode Marking code t5
Text: NTGD3147F Power MOSFET and Schottky Diode −20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 Features • • • • • • Fast Switching Low Gate Change Low RDS on Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility
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NTGD3147F
NTGD3147F/D
onsemi 035 Schottky diode
diode Marking code t5
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j477
Abstract: No abstract text available
Text: SPECIFICATION DE VI C E N AM E : P ow er M O S F E T T Y P E N AME : 2SJ477-01MR SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN CHECKED " NAME APPROVED Fuji Electric Co.,Ltd. 1/• I2 1.Scope This specifies Fuji Power MOSFET 2SJ477-01MR
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2SJ477-01MR
2SJ477-01MR
T0-220F
j477
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EH12
Abstract: No abstract text available
Text: SPECIFICATION DEVICE NAME : TYPE NAME : Power MOSFET 2 S K 2 5 2 8 - 0 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED P i ü i P l â f ' l r i / ' r V k 1i r l CHECKED DWG.N0. DRAWN 1/ 11
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OCR Scan
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2SK2528-01
0257-R-004a
0257-R-003a
EH12
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2SK2525-01
Abstract: No abstract text available
Text: S P E C I F I C A T I ON DEVICE NAME : TYPE NAME : Power MOSFET 2 SK 2 5 2 5- 0 I SPEC. No. F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change w ithout notice. DATE NAME APPROVED P • imiîj îi wF il vn yr ut ri wi r CHECKED
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OCR Scan
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0257-R-004a
2SK2525-0
Y0257-R-003a
0257-R-003a
2SK2525-01
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D03A
Abstract: 2SK2652-01 SC-65 T151
Text: S P E C I F I C A T I O N DEVICE NAME TYPE NAME P owe r MOSFET 2 S K 2 6 5 2- 0 1 SPEC. No. F u j i E l e c t r i c Co., Ltd. This S p e cifica tio n is subject to change without notice. DATE DRAWN NAME APPROVED Fuji Electric C a ¿ M CHECKED il Y 0257-R-004a
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2SK2652-01
0257-R-004a
D03A
2SK2652-01
SC-65
T151
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