P CHANGE MOSFET Search Results

STMicroelectronics marking code date

Abstract: Date Code Marking STMicroelectronics stmicroelectronics datecode STMicroelectronics date CODE Part Marking STMicroelectronics STMicroelectronics date marking CODE marking code stmicroelectronics STMicroelectronics code date marking DATE code stmicroelectronics STMicroelectronics PRODUCT code date
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN DSG/ CT/ 0C27 CATANIA, Jul 17th 2000 DSG Discrete and Standard Circuits Group Catania POWER MOS SILICON LINE CHANGE FOR THE INDUSTRY STANDARDS: IRF820 INVOLVED P&L FAMILY: 29 PRODUCT FAMILY: POWER MOSFETs WHAT : FOLLOWING UP THE DIVISIONAL PROGRAM AIMED AT DEVELOPING NEW

RD10

Abstract: WTV3585
Contextual Info: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change

Contextual Info: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change

INJ0003AC1

Abstract: INJ0003AT2 INJ0003AU1 INJ0003AX SC-75A INJ0003AM1
Contextual Info: ＩＮJ0003AＸ SERIES ・PRELIMINARY High speed switching Silicon P-channel MOSFET Notice: This is not a final specification Some parametric are subject to change. OUTLINE DRAWING DESCRIPTION INJ0003AX is a Silicon P-channel MOSFET. This product is most suitable for low voltage

MAX891L

Abstract: MAX891LEUA MAX892L MAX892LEUA
Contextual Info: ADVANCE INFORMATION All information in this data sheet is preliminary and subject to change. 10/96 Current-Limited, High-Side P-Channel Switches with Thermal Shutdown The MAX891L/MAX892L smart, low-voltage, P-channel, MOSFET power switches are intended for high-side

INJ0002AC1

Abstract: INJ0002AM1 INJ0002AT2 INJ0002AU1 INJ0002AX SC-75A
Contextual Info: ＩＮJ0002AＸ SERIES ・PRELIMINARY High speed switching Silicon P-channel MOSFET Notice: This is not a final specification Some parametric are subject to change. OUTLINE DRAWING DESCRIPTION INJ0002AX is a Silicon P-channel MOSFET. This product is most suitable for low voltage

INJ0001AC1

Abstract: INJ0001AM1 INJ0001AT2 INJ0001AU1 SC-75A
Contextual Info: ＩＮJ0001AＸ SERIES ・PRELIMINARY High speed switching Silicon P-channel MOSFET Notice: This is not a final specification Some parametric are subject to change. OUTLINE DRAWING DESCRIPTION INJ0001AＸ is a Silicon P-channel MOSFET. This product is most suitable for low voltage

INJ0011AM1

Abstract: INJ0011AC1 INJ0011AT2 INJ0011AU1 SC-75A INJ0011A
Contextual Info: ＩＮJ0011AＸ SERIES ・PRELIMINARY High speed switching Silicon P-channel MOSFET Notice: This is not a final specification Some parametric are subject to change. OUTLINE DRAWING DESCRIPTION INJ0011AＸ is a Silicon P-channel MOSFET. This product is most suitable for low voltage

MDS9753E

Abstract: Power MOSFET SO-8 Complementary N-P channel N-P Channel mosfet
Contextual Info: Preliminary – Subject to change without notice Complementary N-P Channel Trench MOSFET General Description Features The MDS9753E uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability.

MDS9651

Abstract: N-P Channel mosfet Power MOSFET SO-8 Complementary N-P channel
Contextual Info: Preliminary – Subject to change without notice Complementary N-P Channel Trench MOSFET General Description Features The MDS9651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability

0342F

Abstract: MAGNACHIP MDS7331 trench mosfet
Contextual Info: Preliminary – Subject to change without notice Dual P-Channel Trench MOSFET 20V, 3.8A General Description Features The MDS7331 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.

MDH3331

Abstract: P-channel Trench MOSFET MagnaChip Semiconductor MOSFET dynamic
Contextual Info: Preliminary – Subject to change without notice P-Channel Trench MOSFET 20V, 3.8A, 70mΩ General Description Features The MDH3331 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability.

Contextual Info: Preliminary – Subject to change without notice P-Channel Trench MOSFET -30V, -5.3A, 35mΩ General Description Features The MDS3651 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent

MDD9754

Abstract: MDD-9754
Contextual Info: Preliminary – Subject to change without notice Dual Enhancement N-P Channel Trench MOSFET General Description Features The MDD9754 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance, high switching performance and exellent reliability

FA7738N

Abstract: fa7738 fuji capacitor FA7738P 3.1v ZENER DIODE PWM controller sop-8 SD833-06 JESD51-5
Contextual Info: FA7738N/P FA7738N/P Application Note July-2006 Fuji Electric Device Technology Co.,Ltd. 1 FA7738N/P WARNING 1. This Data Book contains the product specifications, characteristics, data, materials, and structures as of July 2006. The contents are subject to change without notice for specification changes or other

MDS3651

Abstract: MDS365 mds3651r p-channel 60V 100A MOSFET
Contextual Info: Preliminary – Subject to change without notice Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ General Description Features The MDS3651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability

GTT6405

Contextual Info: Pb Free Plating Product ISSUED DATE :2007/01/17 REVISED DATE : GTT6405 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID -30V 52m -5.0A Description The GTT6405 uses advanced trench technology to provide excellent on-resistance with low gate change.

G3407

Contextual Info: Pb Free Plating Product CORPORATION G3407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2007/01/15 REVISED DATE : BVDSS RDS ON ID -30V 52m -4.1A Description The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change.

d13n3

Abstract: LTC2153-14 LTC2153UJ-14 sck 124 442 LTC2153C LTC2153CUJ-14 LTC2153I LTC2153IUJ-14 voltage stabilizer schematic diagram mark d13n
Contextual Info: Electrical Specifications Subject to Change LTC2153-14 14-Bit 310Msps ADC Features Description 68.8dBFS SNR n 88dB SFDR n Low Power: 401mW Total n Single 1.8V Supply n DDR LVDS Outputs n Easy-to-Drive 1.32V P-P Input Range n 1.25GHz Full Power Bandwidth S/H

onsemi 035 Schottky diode

Abstract: diode Marking code t5
Contextual Info: NTGD3147F Power MOSFET and Schottky Diode −20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 Features • • • • • • Fast Switching Low Gate Change Low RDS on Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility

j477

Contextual Info: SPECIFICATION DE VI C E N AM E : P ow er M O S F E T T Y P E N AME : 2SJ477-01MR SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN CHECKED " NAME APPROVED Fuji Electric Co.,Ltd. 1/• I2 1.Scope This specifies Fuji Power MOSFET 2SJ477-01MR

EH12

Contextual Info: SPECIFICATION DEVICE NAME : TYPE NAME : Power MOSFET 2 S K 2 5 2 8 - 0 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED P i ü i P l â f ' l r i / ' r V k 1i r l CHECKED DWG.N0. DRAWN 1/ 11

2SK2525-01

Contextual Info: S P E C I F I C A T I ON DEVICE NAME : TYPE NAME : Power MOSFET 2 SK 2 5 2 5- 0 I SPEC. No. F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change w ithout notice. DATE NAME APPROVED P • imiîj îi wF il vn yr ut ri wi r CHECKED

D03A

Abstract: 2SK2652-01 SC-65 T151
Contextual Info: S P E C I F I C A T I O N DEVICE NAME TYPE NAME P owe r MOSFET 2 S K 2 6 5 2- 0 1 SPEC. No. F u j i E l e c t r i c Co., Ltd. This S p e cifica tio n is subject to change without notice. DATE DRAWN NAME APPROVED Fuji Electric C a ¿ M CHECKED il Y 0257-R-004a