Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    P 838 X MOSFET DATA SHEET Search Results

    P 838 X MOSFET DATA SHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    P 838 X MOSFET DATA SHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P 838 X MOSFET

    Abstract: power mosfet so8 FL 10BQ040 IRF7805 IRF7805A 9936 mosfet IR power mosfet switching power supply TR2020
    Text: PD – 91746C IRF7805/IRF7805A HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power


    Original     		PDF 91746C IRF7805/IRF7805A IRF7805/IRF7805A IRF7805 IRF7805A P 838 X MOSFET power mosfet so8 FL 10BQ040 IRF7805A 9936 mosfet IR power mosfet switching power supply TR2020

    10BQ040

    Abstract: IRLR8103 IRLR8503 marking JE FET
    Text: PD - 93838 PD - 93839 IRLR8103/IRLR8503 IRLR8103/IRLR8503 Provisional Data Sheet • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current


    Original     		PDF IRLR8103/IRLR8503 IRLR8103 IRLR8503 10BQ040 marking JE FET

    Untitled

    Abstract: No abstract text available
    Text: PD – 91747C IRF7807/IRF7807A HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power


    Original     		PDF 91747C IRF7807/IRF7807A IRF7807

    t428

    Abstract: t428 diode t428 fet IRF7807 t428 24v 10BQ040 IRF7807A FET MARKING
    Text: PD – 91747C IRF7807/IRF7807A HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power


    Original     		PDF 91747C IRF7807/IRF7807A IRF7807 Device52-7105 t428 t428 diode t428 fet t428 24v 10BQ040 IRF7807A FET MARKING

    10BQ040

    Abstract: IRF7807 IRF7807A power supply with mosfet dm 100
    Text: PD – 91747C IRF7807/IRF7807A HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power


    Original     		PDF 91747C IRF7807/IRF7807A IRF7807 Device52-7105 10BQ040 IRF7807A power supply with mosfet dm 100

    "Power MOSFET"

    Abstract: power supply with mosfet dm 100 10BQ040 IRF7805 IRF7807
    Text: PD – 91746B PD – 91747B IRF7805/IRF7807 HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power


    Original     		PDF 91746B 91747B IRF7805/IRF7807 IRF7805/IRF7807 IRF7807 "Power MOSFET" power supply with mosfet dm 100 10BQ040 IRF7805

    IR2105

    Abstract: IR2105S
    Text: Preliminary Data Sheet No. PD60139I IR2105 HALF BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60139I IR2105 IR2105 an90245 IR2105S

    IR2103 APPLICATION NOTE

    Abstract: PD6004 IR2103 IR2103 AN IR2103 APPLICATION IR21034 IR21034S IR2103S mosfet 600V logic level
    Text: Preliminary Data Sheet No. PD60045I IR2103/IR21034 HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60045I IR2103/IR21034 IR2103/IR21034 vol90245 IR2103 APPLICATION NOTE PD6004 IR2103 IR2103 AN IR2103 APPLICATION IR21034 IR21034S IR2103S mosfet 600V logic level

    IR2104 APPLICATION NOTE

    Abstract: ir2104 ir2104 application IR2104S IR21044
    Text: Preliminary Data Sheet No. PD60046I IR2104/IR21044 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD60046I IR2104/IR21044 IR2104/IR21044 volta0245 IR2104 APPLICATION NOTE ir2104 ir2104 application IR2104S IR21044

    1C925L

    Abstract: JESD22-A115
    Text: LF PA K PSMN1R9-25YLC N-channel 25 V 2.05 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is


    Original     		PDF PSMN1R9-25YLC 1C925L JESD22-A115

    IRF7402

    Abstract: IRF7601
    Text: PD - 93851A IRF7402 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 20V RDS(on) = 0.035Ω


    Original     		PDF 3851A IRF7402 IRF7402 IRF7601

    Untitled

    Abstract: No abstract text available
    Text: PD - 93851A IRF7402 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 20V RDS(on) = 0.035Ω


    Original     		PDF 3851A IRF7402

    irf760

    Abstract: No abstract text available
    Text: PD - 93851 IRF7402 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 20V RDS(on) = 0.035Ω


    Original     		PDF IRF7402 irf760

    schematic diagram 48v dc convertor tl3845

    Abstract: sg3524 spice model for pspice schematic diagram 48v ac regulator uc3842 schematic diagram inverter 12v to 24v 30a audio Amp. mosfet 1000 watt 24v dc motor speed control lm324 mini-LVDS and TFT-LCD Timing Controller sg3524 spice model UC1825 spice 500 watt power circuit diagram uc3825
    Text: Selection Guide EIGHTH EDITION Analog/Mixed-Signal Products Designer’s Master Selection Guide August 2002 1996, 1997, 1999, 2000, 2001, 2002 Texas Instruments Incorporated IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications,


    Original     		PDF A060502 schematic diagram 48v dc convertor tl3845 sg3524 spice model for pspice schematic diagram 48v ac regulator uc3842 schematic diagram inverter 12v to 24v 30a audio Amp. mosfet 1000 watt 24v dc motor speed control lm324 mini-LVDS and TFT-LCD Timing Controller sg3524 spice model UC1825 spice 500 watt power circuit diagram uc3825

    Untitled

    Abstract: No abstract text available
    Text: International I R Rectifier Data Sheet No. PD60029I IR2155 NOTE: For new designs, we recommend HR’s new products SR2153 and IR21531 SELF-OSCILLATING HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V


    OCR Scan     		PDF PD60029I IR2155 SR2153 IR21531)

    EA MOSFET

    Abstract: No abstract text available
    Text: International Rectifier I R Preliminary Data Sheet No.PD 60151-G IPS031G/IPS032G SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • Product Summary Over tem perature shutdown Over current shutdown Active clamp Low current & logic level input


    OCR Scan     		PDF 60151-G IPS031G/IPS032G IPS031G/IPS032G EA MOSFET

    Untitled

    Abstract: No abstract text available
    Text: International I R Rectifier IR2151 Preliminary Data Sheet No. PD60034I N O T E : F o r n e w d e s ig n s , w e r e c o m m e n d SB’s n e w p r o d u c t s fR 2 1 § 3 a n d IR 2 1 S 31 SELF-OSCILLATING HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation


    OCR Scan     		PDF IR2151 PD60034I

    transistor bd 905

    Abstract: IR2105 Ablebond 74-1
    Text: Preliminary Data Sheet No. PD60139-H International l R Rectifier IR2105 HALF BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V • • • • Tolerant to negative transient voltage dV/dt immune


    OCR Scan     		PDF PD60139-H IR2105 IR2105 low331 transistor bd 905 Ablebond 74-1

    Untitled

    Abstract: No abstract text available
    Text: International I R Rectifier Preliminary Data Sheet No.PD 60159-G IPS5451/IPS5451S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features • • • • • • • Over tem perature protection with auto-restart Over current shutdown Active clamp E.S.D protection


    OCR Scan     		PDF 60159-G IPS5451/IPS5451S IPS5451/IPS5451Sare

    Untitled

    Abstract: No abstract text available
    Text: |p j"0f n Q t ÌO n Q I Preliminary Data Sheet No. PD601631 X Q R R e c tifie r IR 2 1 0 9 /IR 2 1 0 9 4 HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage


    OCR Scan     		PDF PD601631 500ns IR21094)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet No.PD 60157-G International I R Rectifier IPS521G FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features • • • • • • • Product Summary Over tem perature protection with auto-restart Short-circuit protection (current limit)


    OCR Scan     		PDF 60157-G IPS521G 100mw

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet No.PD 60156-G International l R Rectifier IPS 5 1 1 G/IPS 5 1 2 G FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features • • • • • • • Product Summary Over tem perature protection with auto-restart Short-circuit protection (current limit)


    OCR Scan     		PDF 60156-G IPS511G/IPS512G itat31

    transistor s98

    Abstract: s98 mosfet transistors 019j
    Text: International I R Rectifier ADVANCED INFORMATION Data Sheet No. PD801088 IR2157 FULLY INTEGRATED BALLAST CONTROL IC Features • • • • • • Programmable preheat time & frequency Program mable ignition ramp Protection from failure-to-strike Lamp filam ent sensing & protection


    OCR Scan     		PDF IR2157 150uA) transistor s98 s98 mosfet transistors 019j

    ph 17 G zener diode

    Abstract: zener ph 015
    Text: I , I- I In te rn a tio n a l ADVANCED INFORMATION Data Sheet No. FD8Û10S8 IR 2 1 5 7 l R Rectifier FULLY INTEGRATED BALLAST CONTROL IC Features • • • • • • Programmable preheat time & frequency Program m able ignition ramp Protection from failure-to-strike


    OCR Scan     		PDF 150uA) IR2157 prote3331 ph 17 G zener diode zener ph 015