P 838 X MOSFET DATA SHEET Search Results

irf362

Abstract: IRF360 g141 BF - g142 AE 7851 diode G-135 m10 s rectifier mosfet irf360
Contextual Info: HE 0 I 4055452 OOCHlSâ 0 | Data Sheet No. PD-9.518A INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED IRF360 IRF362 HEXFET TRANSISTORS N-CHANNEL Product Summary 400 Volt, 0.20 Ohm HEXFET The HEXFET® technology is the key to International

Contextual Info: International I R Rectifier Data Sheet No. PD60029I IR2155 NOTE: For new designs, we recommend HR’s new products SR2153 and IR21531 SELF-OSCILLATING HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V

EA MOSFET

Contextual Info: International Rectifier I R Preliminary Data Sheet No.PD 60151-G IPS031G/IPS032G SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • Product Summary Over tem perature shutdown Over current shutdown Active clamp Low current & logic level input

P 838 X MOSFET

Abstract: power mosfet so8 FL 10BQ040 IRF7805 IRF7805A 9936 mosfet IR power mosfet switching power supply TR2020
Contextual Info: PD – 91746C IRF7805/IRF7805A HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power

10BQ040

Abstract: IRLR8103 IRLR8503 marking JE FET
Contextual Info: PD - 93838 PD - 93839 IRLR8103/IRLR8503 IRLR8103/IRLR8503 Provisional Data Sheet • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current

Contextual Info: International I R Rectifier IR2151 Preliminary Data Sheet No. PD60034I N O T E : F o r n e w d e s ig n s , w e r e c o m m e n d SB’s n e w p r o d u c t s fR 2 1 § 3 a n d IR 2 1 S 31 SELF-OSCILLATING HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation

Contextual Info: PD – 91747C IRF7807/IRF7807A HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power

t428

Abstract: t428 diode t428 fet IRF7807 t428 24v 10BQ040 IRF7807A FET MARKING
Contextual Info: PD – 91747C IRF7807/IRF7807A HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power

10BQ040

Abstract: IRF7807 IRF7807A power supply with mosfet dm 100
Contextual Info: PD – 91747C IRF7807/IRF7807A HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power

transistor bd 905

Abstract: IR2105 Ablebond 74-1
Contextual Info: Preliminary Data Sheet No. PD60139-H International l R Rectifier IR2105 HALF BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V • • • • Tolerant to negative transient voltage dV/dt immune

"Power MOSFET"

Abstract: power supply with mosfet dm 100 10BQ040 IRF7805 IRF7807
Contextual Info: PD – 91746B PD – 91747B IRF7805/IRF7807 HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power

IR2105

Abstract: IR2105S
Contextual Info: Preliminary Data Sheet No. PD60139I IR2105 HALF BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V

IR2103 APPLICATION NOTE

Abstract: PD6004 IR2103 IR2103 AN IR2103 APPLICATION IR21034 IR21034S IR2103S mosfet 600V logic level
Contextual Info: Preliminary Data Sheet No. PD60045I IR2103/IR21034 HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V

IR2104 APPLICATION NOTE

Abstract: ir2104 ir2104 application IR2104S IR21044
Contextual Info: Preliminary Data Sheet No. PD60046I IR2104/IR21044 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune

Contextual Info: |p j"0f n Q t ÌO n Q I Preliminary Data Sheet No. PD601631 X Q R R e c tifie r IR 2 1 0 9 /IR 2 1 0 9 4 HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage

1C925L

Abstract: JESD22-A115
Contextual Info: LF PA K PSMN1R9-25YLC N-channel 25 V 2.05 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

Contextual Info: Preliminary Data Sheet No.PD 60157-G International I R Rectifier IPS521G FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features • • • • • • • Product Summary Over tem perature protection with auto-restart Short-circuit protection (current limit)

IRF7402

Abstract: IRF7601
Contextual Info: PD - 93851A IRF7402 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 20V RDS(on) = 0.035Ω

Contextual Info: PD - 93851A IRF7402 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 20V RDS(on) = 0.035Ω

irf760

Contextual Info: PD - 93851 IRF7402 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 20V RDS(on) = 0.035Ω

Contextual Info: Preliminary Data Sheet No.PD 60156-G International l R Rectifier IPS 5 1 1 G/IPS 5 1 2 G FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features • • • • • • • Product Summary Over tem perature protection with auto-restart Short-circuit protection (current limit)

transistor s98

Abstract: s98 mosfet transistors 019j
Contextual Info: International I R Rectifier ADVANCED INFORMATION Data Sheet No. PD801088 IR2157 FULLY INTEGRATED BALLAST CONTROL IC Features • • • • • • Programmable preheat time & frequency Program mable ignition ramp Protection from failure-to-strike Lamp filam ent sensing & protection

ph 17 G zener diode

Abstract: zener ph 015
Contextual Info: I , I- I In te rn a tio n a l ADVANCED INFORMATION Data Sheet No. FD8Û10S8 IR 2 1 5 7 l R Rectifier FULLY INTEGRATED BALLAST CONTROL IC Features • • • • • • Programmable preheat time & frequency Program m able ignition ramp Protection from failure-to-strike

schematic diagram 48v dc convertor tl3845

Abstract: sg3524 spice model for pspice schematic diagram 48v ac regulator uc3842 schematic diagram inverter 12v to 24v 30a audio Amp. mosfet 1000 watt 24v dc motor speed control lm324 mini-LVDS and TFT-LCD Timing Controller sg3524 spice model UC1825 spice 500 watt power circuit diagram uc3825
Contextual Info: Selection Guide EIGHTH EDITION Analog/Mixed-Signal Products Designer’s Master Selection Guide August 2002 1996, 1997, 1999, 2000, 2001, 2002 Texas Instruments Incorporated IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications,