RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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BA 92 SAMSUNG
Abstract: transistor BA 92 samsung transistor Ba 92 transistor samsung
Text: SAMSUNG SEMI CONDUCTOR INC MPS6651 IME D J 7^4145 0007334 T PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR •'Collector-feinJtterifoltág*: Vcto=25V. • CollectorDlssipatlon: Pc max =625mW ; ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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MPS6651
625mW
T-29-21
BA 92 SAMSUNG
transistor BA 92 samsung transistor
Ba 92 transistor samsung
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MICRO SWITCH FREEPORT. ILL. U.S.A
Abstract: VX81 TRANSISTOR JA5 honeywell m 944 r vx13-b1 MAR 637 lt 637 honeywell hall sensor vx81 vx11-b1 VX80-A3
Text: VX SERIES CHART 1 R 3,0 ABSOLUTE MAXIMUM RATINGS SUPPLY VOLTAGE Vs VOLTAGE EXTERNALLY APPLIED TO OUTPUT LOAD ON OUTPUT TEMPERATURE /H\ - 2 4 TO + 2 8 VOLTS DC 28 VOLTS DC MAX WITH OUTPUT TRANSISTOR IN OFF CONDITION ONLY -0.5 VOLTS MIN WITH OUTPUT TRANSISTOR IN
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CO79902
PR22156
C08374-1
C093789
R23775
PR237B7
PR23760
C093843
C095107
CO-95704
MICRO SWITCH FREEPORT. ILL. U.S.A
VX81
TRANSISTOR JA5
honeywell m 944 r
vx13-b1
MAR 637
lt 637
honeywell hall sensor vx81
vx11-b1
VX80-A3
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR . INC MMBA812M5 l^ E O 00Q7231 S | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage CoHector-Emitter Voltage Emitter-Base Voltage Collector Current
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00Q7231
MMBA812M5
MMBT5086
OT-23
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Untitled
Abstract: No abstract text available
Text: S AM S UN G SEMICONDUCTOR I NC MMBA812M7 14E D §7*11,4142 0 0 0 75 3 1 , T | PNP EPITAXIAL SILICON TRANSISTOR T -^ l-O q GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage
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MMBA812M7
OT-23
MMBT5086
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MMBA812M4 1I,E 0 | 7^4142 0007233 3 | PNP EPITAXIAL SILICON TRANSISTOR T - n -o q GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MMBA812M4
MMBT5086
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MPSA10
Abstract: MPSA10 equivalent transistor
Text: SAMSUNG SEMICONDUCTOR I NC MPSA10 l4 E | 7 «,fcm Ma 0007341, 5 NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emltter Voltage: Veto= 40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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MPSA10
625mW
T-29-21
MPSA10
MPSA10 equivalent
transistor
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MARKING W2 SOT23 TRANSISTOR
Abstract: MMBA812M3 DO 127
Text: SAMSUNG S E M I C O N D U C T O R . INC MMBA812M3 1 4 E _.? §7^41*12 0 0 0 7 2 3 5 :1 PNP EPITAXIAL SILICON TRANSISTOR^27 ^ i GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Cotfector-Emltter Voltage
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MMBA812M3
OT-23
MMBT5086
MARKING W2 SOT23 TRANSISTOR
MMBA812M3
DO 127
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MMBA812M6
Abstract: marking ah sot -5
Text: ¡SAMSUNG S EMI CONDUCTOR INC MMBA812M6 y jL £ .l °00?23S 7 | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Enftitter Voltage Emitter-Base Voltage Collector Current
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MMBA812M6
OT-23
MMBT5086
MMBA812M6
marking ah sot -5
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MMBT5086 14E D I 0007573 M | PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltape Emitter-Base Voltage Collector Current Collector Dissipation
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MMBT5086
OT-23
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Untitled
Abstract: No abstract text available
Text: S AM S U N G SEMICONDUCTOR IME INC I 7^4142 G007373 fl | PNP EPITAXIAL 7 = *r^ 7 SILICON DARLINGTON TRANSISTOR MPSA75 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vc*s=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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G007373
MPSA75
625mW
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PDF
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MARKING W2 SOT23 TRANSISTOR
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MMBC1623L7 IM E D £ V ì b l l M a 0007251^5 ^ NPN EPITAXIAL SILICON TRANSISTOR -AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic
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MMBC1623L7
OT-23
MMBC1623L3
MARKING W2 SOT23 TRANSISTOR
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MPSA10
Abstract: No abstract text available
Text: S AM S UNG SEMICONDUCTOR INC IME MPSA20 D J 7*^14142 0007351 I I T ‘ ^ ¿ / NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V c e o “ 40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (T,=25°C)
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MPSA20
625mW
MPSA10
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D | 7*11.4:1.42 O O O T a T l b | NPN EPITAXIAL SILICON TRANSISTOR T-29-29 1 DARLINGTON AMPLIFIER TRANSISTOR :- SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage
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MMBTA14
T-29-29
OT-23
MMBT6427
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PDF
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SAMSUNG transistor
Abstract: No abstract text available
Text: SAMSUNG S E M IC O N D U C T O R INC MMBTA70 14E D | 000731U 5 | PNP EPITAXIAL SILICON TRANSISTOR f AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T*=25°C Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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000731U
MMBTA70
OT-23
MMBT5086
SAMSUNG transistor
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MMBC1009F2 11E D | ? * ii,4 m 3 0 0 0 7 2 3 fl 2 | NPN EPITAXIAL SILICON TRANSISTOR T -3 1 -1 9 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage
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MMBC1009F2
OT-23
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transistor
Abstract: Samsung Semiconductor
Text: r 7 [ SAMSUNG SEMICONDUCTOR INC MMBC1623L3 m e o § 7^4142 0007am, i | NPN EPITAXIAL SILICON TRANSISTOR — : -' T AMPLIFIER TRANSISTOR - a R - - SO T-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage
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0007am,
MMBC1623L3
transistor
Samsung Semiconductor
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MPS6522 D | 7*^4145 0007327 1 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto =25V • Collector Dissipation: P c max =625mW A BSO LU TE MAXIMUM RATINGS (Ta=25°C) Characteristic
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MPS6522
T-29-21
625mW
2N3906
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC l^E 0 MPS6520 £ 7^134142 0 G Q 7 3 2 5 Ô | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto=25V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) \ Characteristic
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MPS6520
T-29-21
625mW
2N3904
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMS UNG SEMICONDUCTOR INC 14E D | VILUM ? 000737b 3 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA77 — - T -2 9-2 9 DARLINGTON TRANSISTOR TO-92 • Collector-Em itter Voltage: Vc£s=60V • C ollector D issipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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000737b
MPSA77
625mW
MPSA75
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MARKING W2 SOT23 TRANSISTOR
Abstract: No abstract text available
Text: SAMSUNG SEMI CONDUCTOR INC NPN EPITAXIAL SILICON TRANSISTOR MMBC1623L4 :- T - ^ - H AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C - Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage
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MMBC1623L4
OT-23
MMBC1623L3
MARKING W2 SOT23 TRANSISTOR
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PDF
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MARKING W2 SOT23 TRANSISTOR
Abstract: SAMSUNG SEMICONDUCTOR
Text: SAMSUNG S EM ICONDUCTOR INC_14 E 0 J _ 7 Ü b41 MMBC1622D8 0007245 T I. NPN EPITAXIAL SILICON TRANSISTOR T -A ^ -lS AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Cotlector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MMBC1622D8
OT-23
MMBC1622D6
100mA,
MARKING W2 SOT23 TRANSISTOR
SAMSUNG SEMICONDUCTOR
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transistor
Abstract: No abstract text available
Text: SAM SUNG S E M IC O N D U C T O R INC MMBC1622D6 14E D _ 7 1 fe 4 1 4 2 0007542 4 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta= 2 5 °C Characteristic Collector-Base Voltage CoHector-Emitter Voltage Emitter-Base Voltage
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MMBC1622D6
OT-23
transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR I NC 14E | 7*11,4142 0007^^6 «1 | T - t f - * ? MMBTA63 PNP EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C C h aracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MMBTA63
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PDF
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