P 605 TRANSISTOR Search Results

2SC605

Abstract: 2SC606
Contextual Info: NEC SILICON TRANSISTORS ELECTRON DEVICE 2 SC 605 B , 2SC606(B) FOR TV TUNER 2SC 606(B ) : VHF RF AMPLIFIER 2SC 605(B ) : VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE D IM EN SIO N S (U nit : mm) • Low NF high Gpe. NF = 2.0 dB TY P . Gpe = 24 dB TY P . <f = 200 MHz)

GP605

Abstract: GP605ID
Contextual Info: GENNUM C O R P O R A T I O G P 605 Resonant Mode Power Supply Controller N DATA SHEET FEATURES CIRCUIT DESCRIPTION • frequency range of 1 kHz to 2 MHz The GP605 utilizes frequency modulation instead of pulse width modulation to achieve regulation. The pulse width is

2SD571

Abstract: 2SB605
Contextual Info: NEC v U = i > h 7 > y ^ ^ Silicon T ran sisto r 2SD571 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier £fJfil2 Unit : mm o t —T 'i *T> y°ï$co Y ÿ 4 o 2 S B 605 ¿ n y 7 “ ') S > ? >) O / J^ T P tA ^ ^ <, 7.0 MAX. T é tto if t lÎŒ T - t o

JY 222 M capacitor

Contextual Info: Find It By Series m in iR te l i niniB ag B/•Swail.N Surface M ount D escription P age N u m b er Q u ick V iew U s s is s s 6 0 0 -6 1 1206 to 1806 ^ eedthl" C apacitor 32 602 603 605 606 607 608 609 612 613 615 616 620 621 622 402 403 405 406 407 408

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

DS11

Abstract: DT3055L
Contextual Info: DT3055L VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /l i t e w î i I P O W E R S E M IC O N D Ü C T O R I Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance

BF298

Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
Contextual Info: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .

6D120C-050

Abstract: 3 phase inverter circuits M601 6DI30A-050 6DI50A-055 6D120 6DI15A-050 IC M605 6DI50B-050 EVF31T-050A
Contextual Info: Transistor Modules C OLL MER S E M I C O N D U C T O R INC m 2 5 3 6 7 ^ 2 O G O l b l M T14 « C O L MAE D 6-pack p o w e r tran sisto r m odules * 6 p o w e r transistors and 6 free w h e els are b uilt into o ne package. * All te rm in a ls are insulated fro m m o u n tin g plate.

6d120c-050

Abstract: 6d150c-050 1DI500A-030 6D115A-050 6D175A-050 all type transistor equivalent 6DI30B-050 m605 6D130A-120 6D130A
Contextual Info: Transistor Modules C OLL MER S E M I C O N D U C T O R INC m 2 5 3 6 7 ^ 2 O G D l b l M T14 « C O L MAE D 6-pack p o w e r tran sisto r m odules * 6 p o w e r transistors and 6 free w h e els are b uilt into o ne package. * All te rm in a ls are insulated fro m m o u n tin g plate.

6d120c-050

Abstract: 6D175A-050 6d150c-050 1DI500A-030 6D115A-050 6DI30B-050 6D130A-120 all type transistor equivalent M605 6D130A
Contextual Info: Transistor Modules C OLL MER S E M I C O N D U C T O R INC m 2 5 3 6 7 ^ 2 O G D l b l M T14 « C O L MAE D 6-pack p o w e r tran sisto r m odules * 6 p o w e r transistors and 6 free w h e els are b uilt into o ne package. * All te rm in a ls are insulated fro m m o u n tin g plate.

BA 92 SAMSUNG

Abstract: transistor BA 92 samsung transistor Ba 92 transistor samsung
Contextual Info: SAMSUNG SEMI CONDUCTOR INC MPS6651 IME D J 7^4145 0007334 T PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR •'Collector-feinJtterifoltág*: Vcto=25V. • CollectorDlssipatlon: Pc max =625mW ; ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

IC M605

Abstract: 6DI30B-050 M605 6DI15A-050 6DI10A-050 6DI15A-120 6DI20C-050 6DI50C-050 6DI75A-050 6DI50B-050
Contextual Info: BIPOLAR TRANSISTO R M O D ULES Ratings and Specifications ¿i 1400 v o lts class p o w e r tran sisto r m odules • P o w e r transistors and fre e w h e e l dio d es are built into o ne package. • T e rm in a l lay o u t in w hich d rive w irin g and p o w er w irin g do not co m e accross.

SIEMENS THYRISTOR

Abstract: din IEC 747 ac transistors Transistoren SMD Code DIODE MARKING CODE 623 thyristor spice SIPMOS SIEMENS smd diode marking codes 31 DIODE smd marking CODE 128
Contextual Info: SIEMENS Inhalt Inhaltsverzeichnis Table of Contents Content Seite Page Typenübersicht nach Produktgruppen Selection Guide by Product Groups SIPMOS Kleinsignal Transistoren. 9 SITAC AC-Switches. 11 SIPMOS Small-Signa Transistors.9

IC M605

Abstract: 6DI30B-050 M605 6DI20C-050 6di15a-050 6DI75A-050 EVF31T-050A 1DI200A-140 6DI10A-050 M105
Contextual Info: BIPOLAR TRANSISTO R M O D ULES Ratings and Specifications ¿i 1400 v o lts class p o w e r tran sisto r m odules • P o w e r transistors and fre e w h e e l dio d es are built into o ne package. • T e rm in a l lay o u t in w hich d rive w irin g and p o w er w irin g do not co m e accross.

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

MICRO SWITCH FREEPORT. ILL. U.S.A

Abstract: VX81 TRANSISTOR JA5 honeywell m 944 r vx13-b1 MAR 637 lt 637 honeywell hall sensor vx81 vx11-b1 VX80-A3
Contextual Info: VX SERIES CHART 1 R 3,0 ABSOLUTE MAXIMUM RATINGS SUPPLY VOLTAGE Vs VOLTAGE EXTERNALLY APPLIED TO OUTPUT LOAD ON OUTPUT TEMPERATURE /H\ - 2 4 TO + 2 8 VOLTS DC 28 VOLTS DC MAX WITH OUTPUT TRANSISTOR IN OFF CONDITION ONLY -0.5 VOLTS MIN WITH OUTPUT TRANSISTOR IN

tda 2070

Abstract: E2p 93 transistor NP4GS3 CCGA -CG 472 TDA 2060 CCGA 472 mechanical drawing tree Data Structure INCAP LIMITED IT SERIES LP1 K09 powerpc 405gp
Contextual Info:  IBM PowerNP NP4GS3 Network Processor Preliminary January 29, 2003  0.1 Copyright and Disclaimer  Copyright International Business Machines Corporation 1999, 2003 All Rights Reserved US Government Users Restricted Rights - Use, duplication or disclosure restricted by GSA ADP Schedule Contract with IBM Corp.

TRANSISTOR BO 344

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT605 ISSU E 1 - SEPT 93_ L FEATURES * 120 Volt V CE0 * G ain of 2 K at lc=1 A m p * Ptot= 1 Watt A P P L IC A T IO N S * * Lam p, so le n o id and relay d riv e rs

marking code 604 SOT23

Abstract: marking 603 npn transistor
Contextual Info: SIEMENS BCR 119 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1=4.7kii JZ L nr Pin Configuration h Package O 1 =B CO Q62702-C2255 h WKs m Marking Ordering Code BCR 119 ro Type nr

transistor SMD t04

Abstract: smd transistor t04 SMD Transistors t04 88 transistor T04 smd SMD Transistors t04 t04 smd transistor transistor SMD t04 46 transistor SMD t04 64 transistor SMD t04 78 tyco igbt module 25A
Contextual Info: Optical Semiconductor Devices Visible LEDs z 248 Photo Couplers z 254 Photo Sensors z 272 Fiber-Optic Devices TOSLINK z 278 Visible Laser Diodes z 281 Optical Communication Devices z 281 CCD and CMOS Image Sensors z 282 247 Visible LEDs InGaAP High-Brightness (Package Size :ϕ 5)

Contextual Info: h ~ 7 > y X £ /Transistors 2SD 1563 2SD1563 i tf£=*•'> npn v';=i>h7>vx^ 15Jil}J& 1i^*ilN lffl/Lo w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • VI->4K'.V^~r • fl-JK\b£0/Dim ensions Unit: mm 1) R /± T <fc-5 (BVceo= 120V)o 2) ASOA'-l£<«St;^l'0

Contextual Info: S AM S UN G SEMICONDUCTOR I NC MMBA812M7 14E D §7*11,4142 0 0 0 75 3 1 , T | PNP EPITAXIAL SILICON TRANSISTOR T -^ l-O q GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBA812M4 1I,E 0 | 7^4142 0007233 3 | PNP EPITAXIAL SILICON TRANSISTOR T - n -o q GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: SAMSUNG SEMICONDUCTOR . INC MMBA812M5 l^ E O 00Q7231 S | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage CoHector-Emitter Voltage Emitter-Base Voltage Collector Current