P 13005 0 Search Results

Transistors 13005 D

Abstract: Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K
Contextual Info: tati53^3X D 0 n i2 7 = 1 D EV E LO P M E N T D ATA MJE 13004 MJE 13005 This data sheet contains advance information and specifications are subject to change without notice. N AI1ER PHILIPS/DISCRETE SSE D T - 53~I3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended for use

BR 13005

Abstract: 13005 13005 ballast ballast with 13005 AEG T 250 N 700 transistor 13005 E 13005 s BR 13005 A 13004 TE13004
Contextual Info: A E G CORP 1 ?E D O O a 'ì ' 4 2 b 0 0 0 1 1 .3 5 4 • TE 13004 ■TE 13005 1T11SFKKS1S ele ctro n ic Creat«TechnoJogies T - 3 3 MI Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

13005 equivalent

Abstract: 13005 mosfet 13005 equivalent internal L5988 74477 L5983 fsw25 C3225 CDRH8D28 L5988D
Contextual Info: L5983 1.5 A step-down switching regulator Features • 1.5 A DC output current ■ 2.9 V to 18 V input voltage ■ Output voltage adjustable from 0.6 V ■ 250 kHz switching frequency, programmable up to 1 MHz ■ Internal soft-start and inhibit ■ Low dropout operation: 100 % duty cycle

Contextual Info: AMPMODU .031 x .062 [0.79 x 1.57] Interconnection System Catalog 1307612 Revised 7-01 A p plication To o lin g fo r C rim p S n ap -In R ecep tacle C o n tacts and Locking C lip C o n tacts Hand Tools Automatic Tooling PRO-CRIMPER II Hand Tool — Part Number 354940-1

E13005

Abstract: LO 13005 e13005t E 13005 transistor Electronic ballast 13005 transistor E 13005 13004 TRANSISTOR TR 13005 transistor tr 13005 E 13005 TRANSISTOR
Contextual Info: Te m ic TE13004 • TE13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • High reverse voltage • Pow er dissipation P,ot = 57 W • Glass passivation • Short sw itching tim es Applications

13005 2 transistor

Abstract: D13005 TRANSISTOR 13005 13005 s 13005 TRANSISTOR d13005t 13005T 13005 ballast 13004 TRANSISTOR transistor 13005 CIRCUIT
Contextual Info: TD13004 • TD13005 Te m ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology Very low dynam ic saturation • G lass passivation Very low operating tem perature • Very short sw itching times High reverse voltage

EB 13005

Abstract: Transistors 13005 D MJE13004
Contextual Info: 7 ^ 5 ^ 5 3 7 0 0 5 ^ 1 0 5 1 13004 13005 • SGS-THOMSON ¡ILIOTa «! S G S-TH0MS0N MJE MJ E 3DE D HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon muitiepitaxial me­ sa NPN transistors in JedecTO -220 plastic package particularly intended for switch-mode applications.

CI 13007

Abstract: bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471
Contextual Info: {ZT SGS-THOMSON Ä 7 # MD K I[LiOT©liî!IDËi CONSUMER RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA

D13005

Abstract: C13005 on 5262 e13005f 13005 ballast E13005 13005 st ballast with 13005 d13005e transistor E 13005
Contextual Info: ST13005 High voltage fast-switching NPN power transistor Datasheet − production data Features • Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting

in 3003 TRANSISTOR

Abstract: acrian RF POWER TRANSISTOR 3003 transistor hn10 transistor m 3003 g acrian inc
Contextual Info: 0182998 A C R I AN INC T? DE | D l f l E T T f l 0GDm ?S 7 |~D ^ - ^ - 0 7 W p i ti ü B S G E N ER A L isssbss 3003 D ESC R IPT IO N 3 W ATTS - 28 V O LTS 3000 MHz The 3003 is a common base transistor capable of providing 3 watts of C W R F output power at 3000

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. W V COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 6 4 3 2 - LOC DIST R E V IS IO N S DE EO ALL RIGHTS RESERVED. P LTR F MILITARY PART N U M B E R , 0 0 7 7 9 , M A R K E D ON O P P O S I T E SIDE.

13005 s

Abstract: PL130-05
Contextual Info: PL130-05 High Speed Translator Buffer to PECL Enable Low FEATURES Differential PECL output Single AC coupled input (min. 100mV swing). Input range from DC to 1.0 GHz. 2.5V to 3.3V operation. Available in 3x3mm QFN. OEV 16 GND 15 12 11 10 9 PL130-05 1 2 3

me 13003

Abstract: ar 13003 HN62412P TU F 13003
Contextual Info: H I T A C H I / L O G I C / A R R A Y S / M E M DM DËJ 0013003 0 04E 13003 4496203 HITACHI/ L OG IC / A R R A Y S/ M E M HN62412P- -P V Ó -/ J -/ 3 " 131072-word x 16-bit/262144-word x 8-bit CM O S Mask Programmable Read Only Memory The HN62412P is a 2-Mbit CMOS mask-programmable ROM

BL8305A en

Abstract: 13005 ld1 13005 ballast ballast with 13005 sd 13005 power supply IRF830 APPLICATION 13005 mosfet transistor 13005 Window Discriminator SEC 13005
Contextual Info: BL8305A BALLAST CONTROL IC The ballast control IC BL8305A is an improved version of the BL8301. The BL8305A provides more functionality and is easier to use than previous IC BL8301. The BL8305A optimizes the compatibility of driving MOSFET half-bridge MHF

13005 mosfet

Abstract: BL8310
Contextual Info: 上 海 贝 岭 股 份 有 限 公 司 BL8310 电子镇流器专用驱动电路 邮 编 ： 200233 上海市宜山路 810 号 Tel: 86-021-64850700 Fax: 86-021-64854424 BL8310 电子镇流器专用驱动电路 BL8310 是电子镇流器专用控制芯片，作为 BL8305A 的升级产品，

NJM2930L-05

Contextual Info: LO W DROPOUT VOLTAGE REGULATOR NJM2930 The NJM2930 3-terminal positive voltage regulator features an ability to source 150mA of output current 100mA: LType with an input-output differential of 0.6V or less. Efficient use of low input voltages obtained, for example, from an

Contextual Info: MJE13004 MJE13005 S G S -T H O M S O N ^□ gytemKgir^MOOs HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon multiepitaxial me­ sa NPN transistors in JedecTO-220 plastic package particularly intended for switch-mode applications. TO-220

Contextual Info: SGS-THOMSON M G iœ iL IO T M ie S M JD 13005 HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR . . . . . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED

BL8305A

Abstract: IN4148 13005 mosfet BL8301 FR107 IRF830
Contextual Info: BL8305A 电子镇流器专用驱动电路 BL8305A 电子镇流器专用驱动电路 BL8305A 是电子镇流器专用控制芯片，作为 BL8301 的升级产品， BL8305A 功能更加强大。优化了 MOSFET 和双极型晶体驱动的兼容性。 对于双极型半桥的驱动，具有基级注入电流强度自动调节功能，确保

IRF 850

Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
Contextual Info: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400

BUV93

Abstract: TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003
Contextual Info: TELEFUNKEN ELECTRONIC filC D WM fi^SOCHb ODDSb43 1 • ALG6 POWER CONVERSION TRANSISTORS TELEFUNKEN electronic designs its high voltage power transistors for efficient operation in the full range of switching power supply, and switching amplifier topologies associated

IN4148

Abstract: BL8305 BL8301 FR107 IRF830 1N4148 4.3V
Contextual Info: BL8305电子镇流器专用驱动 电路 BL8305 电子镇流器专用驱动电路 BL8305 是电子镇流器专用控制芯片，作为 BL8301 的升级产品， BL8305 功能更加强大。优化了 MOSFET 和双极型晶体驱动的兼容性。 对于双极型半桥的驱动，具有基级注入电流强度自动调节功能，确保

diode D45C

Abstract: JE 800 transistor L146 IC BD800
Contextual Info: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 f*FE M in /M a x @ lc |XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8* 8* 0.5*

BUV 471

Abstract: BUV 481 BUV-481 CI 13007 BUX 115 MJE-13007 MJE13005A BUV46 MJE13007 BUV-471
Contextual Info: F=Z SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MO K IlLI g¥lSήi!l©i POWER BIPOLAR 700 / 1000 V VCBO RANGE •c (A 2 2 4 4 4 4 5 5 5 5 5 5 5 5 6 6 7 8 8 8 9 9 9 9 9 9 9 9 12 12 12 15 15 15 15 15 15 15 15 15 16 16 16 16 24 24 30 32 32 35 vCBO (V)