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    P 112 A Search Results

    P 112 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2112-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK3112-AZ Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    R2A20112ASP#W0 Renesas Electronics Corporation Critical Conduction Mode Interleaved PFC Control IC Visit Renesas Electronics Corporation
    9112AG-27LF Renesas Electronics Corporation Clock Buffer Visit Renesas Electronics Corporation
    9112AF-17LF Renesas Electronics Corporation High Performance Low Skew 9 Output Clock Visit Renesas Electronics Corporation
    SF Impression Pixel

    P 112 A Price and Stock

    Texas Instruments TMP112AQDRLRQ1

    SENSOR DIGITAL -40C-125C 6SOT
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    DigiKey TMP112AQDRLRQ1 Digi-Reel 5,784 1
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    TMP112AQDRLRQ1 Cut Tape 5,784 1
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    TME TMP112AQDRLRQ1 1
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    UMW TMP112AIDRLR

    SOT-563 TEMPERATURE SENSORS ROHS
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    DigiKey TMP112AIDRLR Digi-Reel 1,791 1
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    TMP112AIDRLR Cut Tape 1,791 1
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    Texas Instruments TMP112AIDRLR

    SENSOR DIGITAL -40C-125C 6SOT
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    DigiKey TMP112AIDRLR Digi-Reel 523 1
    • 1 $1.04
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    TMP112AIDRLR Cut Tape 523 1
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    Newark TMP112AIDRLR Cut Tape 6 1
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    Bristol Electronics TMP112AIDRLR 49
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    TME TMP112AIDRLR 980 1
    • 1 $0.8
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    Ameya Holding Limited TMP112AIDRLR 3,146
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    Chip 1 Exchange TMP112AIDRLR 2,431
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    Chip One Stop TMP112AIDRLR Cut Tape 2,921
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    New Advantage Corporation TMP112AIDRLR 13,465 1
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    Win Source Electronics TMP112AIDRLR 139,760
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    Panasonic Electronic Components DP-112A-E-P-J

    SENSOR PRESSURE -0.1 - 1MPA
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    DigiKey DP-112A-E-P-J Box 2 1
    • 1 $128
    • 10 $116.364
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    TME DP-112A-E-P-J 6 1
    • 1 $119.7
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    Master Electronics DP-112A-E-P-J 9
    • 1 $133.84
    • 10 $118.54
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    Texas Instruments TMP112AIDRLT

    SENSOR DIGITAL -40C-125C SOT563
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    DigiKey TMP112AIDRLT Reel
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    TMP112AIDRLT Cut Tape 1
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    TMP112AIDRLT Digi-Reel 1
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    TMP112AIDRLT 31 3
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    Chip 1 Exchange TMP112AIDRLT 2,714
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    New Advantage Corporation TMP112AIDRLT 1,688 1
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    Win Source Electronics TMP112AIDRLT 139,080
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    P 112 A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    P-112

    Abstract: p112 112-P P-152 P1521
    Text: 0 POWER DIVIDERS / COMBINERS P-112 & P-152 1 to 400 MHz / 3-Way / Uniform Phase & Amplitude Bal. / Low Insertion Loss / Broadband / TO-5 PRINCIPAL SPECIFICATIONS Model Number Freq. Range, MHz Frequency Isolation, Insertion Phase Amplitude VSWR Internal Performance,


    Original
    P-112 P-152 P-152 P-112/P-152 16Feb96 P-112 p112 112-P P1521 PDF

    Untitled

    Abstract: No abstract text available
    Text: SDN520C N-Ch: 4.5 A, 20 V, RDS ON 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m N & P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DFN2x2-6L DESCRIPTION These miniature surface mount MOSFETs utilize a


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    SDN520C 05-Nov-2012 PDF

    IRF5800

    Abstract: IRF5803 SI3443DV sot-23 Marking 3D Switching Diode SOT23 Marking 3D Switching Diode SOT23 Marking 3J MARKING CODE 88 TSOP-6
    Text: PD-94015 IRF5803 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (mΩ) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from


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    PD-94015 IRF5803 simila5805 IRF5806 IRF5800 IRF5803 SI3443DV sot-23 Marking 3D Switching Diode SOT23 Marking 3D Switching Diode SOT23 Marking 3J MARKING CODE 88 TSOP-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-95262 IRF5803PbF l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from


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    PD-95262 IRF5803PbF OT-23. PDF

    BDE0003D

    Abstract: No abstract text available
    Text: Following is a correction to the recommended land pattern in the databook: • Radio-Frequency Semiconductors Diodes ■ Document ID: BDE0003D ■ Published in 2006-9 P. 112 Wrong: Right: SMQ package SMQ package 16 SMQ (16) SMQ 1.45 0.9 0.9 0.9 0.9 0.9 1.45


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    BDE0003D BDE0003D PDF

    Marking Code L4 sod323

    Abstract: No abstract text available
    Text: BAT54WS Schottky Diode t c u rod P New .012 0.3 .065 (1.65) .076 (1.95) .100 (2.55) .112 (2.85) Cathode Band Features .006 (0.15) max. .004 (0.1) max. .049 (1.25) max. .059 (1.5) 0.062 (1.60) Top View Dimensions in inches and (millimeters) .043 (1.1) 0.055


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    BAT54WS OD-323 OD-323 D5/10K 30K/box 30K/box Marking Code L4 sod323 PDF

    AN112

    Abstract: C8051F020 C8051F022 C51 Family f02x 8051F AN11 C8051F021 C8051F023 C8051F300
    Text: A N 112 UART I N - A P P L I C A T I O N C O D E L O A D I N G E X A M P L E S Relevant Devices transfer of code from the host to its program memory. This application needs the ability to do the folThis application note applies to the following lowing tasks:


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    communicaC8051F020, C8051F021, C8051F022, C8051F023, C8051F300, C8051F301, C8051F302, C8051F303. AN112 C8051F020 C8051F022 C51 Family f02x 8051F AN11 C8051F021 C8051F023 C8051F300 PDF

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM2337P P-Channel 30-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -30 PRODUCT SUMMARY rDS(on) (mΩ) 112 @ VGS = -4.5V 172 @ VGS = -2.5V ID(A) -2.8 -2.3 Typical Applications:


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    AM2337P PDF

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AMA520C N & P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed -20 rDS(on) (mΩ) 58 @ VGS = 4.5V 82 @ VGS = 2.5V 112 @ VGS = -4.5V 172 @ VGS = -2.5V


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    AMA520C AMA520C PDF

    KPE-112

    Abstract: piezo transducer
    Text: PIEZO TRANSDUCER 8 2 " » * . Shape KPE-112 R o H S Compliant Available eg K P £ G 1 12 [ I M o d el N um b er I K p E -112 Max 30 Rated Voltage (Vp-p) Current Consumption (mA) Sound Pressure Level (dB) Electrostatic Capacity (pF) M ax 11@ 10Vp-p.Square W ave.4.0KH z


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    KPE-112 10Vp-p UL-94 KPE-112 piezo transducer PDF

    LM312

    Abstract: LM112 LM3120 LM112H LM212 LM212H LM312H Raytheon Company
    Text: Precision Operational Amplifiers 112 212 312 i ^ - GENERAL DESCRIPTION DESIGN FEATURES T h e L M 112, L M 2 1 2 , and L M 3 1 2 are S u p er Beta o p e ra tio n a l a m p lifie rs , each fa b ric a te d on a s ilic o n c h ip b y th e pla n a r e p ita x ia l process.


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    LM112, LM212, LM312 LM112 LM212 LM312, LM3120 LM112H LM212H LM312H Raytheon Company PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev APPROVED: DATE:_ Description AW0# Date 9/1/06 RELEASED • Appr TITLE: .232 [5.90] n p i .494 [12.55] 1 UUUUUUUUUUUMJÜUUUUUUUUUU 1 1' .125 [3.18] - .112 [2.84] - I r -B - -«— .109 [2.77] .112 I Iz [2.84] l z .o 'M — I O O O o j O O O — IO O O


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Dîalîght 591 7602-1XX True Surface Mount LED - Part No.* 591-7602-1 xx COLLECTOR ID 2.1 6.1 [.082] ' [.240] ' Configuration 900 nm Phototransistor T ~ 2.8 [. 112] A p p licatio n s [.004] MAX. BELOW SURFACE A • Control and drive circuits v LED LEAD SOLDERING


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    7602-1XX I-079] PDF

    D92N

    Abstract: No abstract text available
    Text: »v^-r‘^ 'V - M P T 1-112-07-G -T M a te i w ith : MPS NO. PINS PER ROW MPT1 Specifications: MPT1 I In sulator M aterial: Nature I Liquid Crystal P olym sr Term inal Material: Phosphor Bronze O p erating Tem p Range: -65°C to + 1 2 5 °C with Gold -65°C to +105°C with Tin


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    1-112-07-G 1-800-SAMTEC-9 D92N PDF

    Untitled

    Abstract: No abstract text available
    Text: A L P H A N U M E R IC SERIES INDEX SE R IE S PAGE 7 B B . .74 7 N B . . 74 7 S B . . 74 A F L . .111 A N T . . 87-88 A R C . . 112


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D bbS3T31 0D3D5SD 112 H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


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    bbS3T31 OT186 BUK443-1OOA/B BUK443 -100A -100B bbS3t131 003052M BUK443-100A/B PDF

    tvss

    Abstract: SMCJ16A at mel 113
    Text: S urge current ratings can be increased for a g iv e n a p p lic a tio n by s e rie s s ta c k in g p a rts as illu s tra te d in M ic ro N o te No. 112. H ow ever, there are lim itations when the desired operating voltage V WM is relatively low. For exam ple, a


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    000ms) tvss SMCJ16A at mel 113 PDF

    Untitled

    Abstract: No abstract text available
    Text: Catalog 1 3 0 7 5 1 5 Issued 9-99 C H A M P .050 Series I Connectors C o n tin u e d Single Connector Attachment (SCA-2) for Fibre Channel (Continued) Blindmate, 80-Position Plug Assembly Part N o . 112 328 3-5 Part N o . 1123283-9 (80 P o s itio n ) Material and Finish


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    80-Position PDF

    SI8601DJ

    Abstract: SI8601 SI8601DN alc 288 si8603 Si86 SIB601 AN83-13 SW 8603
    Text: SÌ8601/8603 j y Siliconix ncorporated 8-Bit Data Acquisition Systems FEATURES BENEFITS APPLICATIONS • Total U nadjusted Error < 112 LSB Si8603 • Elim inates External Trim s • >iP/P C -B ased Data Acquisition System s • Fast Conversion Tim e (25 p.s m axim um )


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    Si8603) Si8601) Si8601 Si8603 SI8601DJ SI8601DN alc 288 Si86 SIB601 AN83-13 SW 8603 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT PART NUMBER REV. SSL—LX3064SID 03.70 [00.146] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 25‘ C PARAMETER MIN PEAK WAVELENGTH 02.85 WO,112: REVERSE VOLTAGE 2.0 VIEWING ANGLE 1.00 [0.039: I y UNITS Z .5 Vf 1 DO Vr mcd 60 2x theta EMITTED COLOR:


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    LX3064SID PDF

    SSL-LX3064LHD

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT PART NUMBER REV. SSL-LX3064LHD 03.70 [00.146] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 5 T PARAMETER MIN PEAK WAVELENGTH 02.85 03.00 REVERSE VOLTAGE [00.118: MAX 700 FORWARD VOLTAGE W O ,112: TYP lf= 2 0 m A 2.0 Z .5 5 1.0 6.00 [0.236:


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    SSL-LX3064LHD SSL-LX3064LHD PDF

    WT160-P162

    Abstract: SICK IR Sensor
    Text: W T 160 W T 160 -P /N 172 -P /N 112 -P /N 152 ~ 11 n = n T~ - i- cK 1 m - i- ^4 -it, CO 1 f W T 160 -P /N 470 -P /N 410 -P /N 450 Scanning Range 50 m m 80 m m 300 m m Features: • 3 different optics 23— ► t W T 160 -P / N 182 -P / N 122 -P / N 162 n — fT


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    160P162 WT160- 160P410 WT160-P162 SICK IR Sensor PDF

    Untitled

    Abstract: No abstract text available
    Text: 6 Rev APPROVED: DATE:_ Description AWO# Date 4/19/05 RELEASED - Appr TITLE: 5.90] - p < v. .125 ;3.18] III -.1 0 9 [2.77] .112 [ 2 .8 4 ]— ! .318 [8.08] .720 [18.30] | > O — O O O 2 0 .1 2 6 [3.20] 0.047 [1.20] PCB LAYOUT SPECIFICATIONS: Material:


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    DXXX-PL-16 PDF

    FW7555M

    Abstract: 7555M MPP15M Q02747
    Text: LIEFERVORSCHRIFT SPECIFICATION FRIWO FRIWO Gerätebau GmbH V o n -Lieb ig -Str. 11 D-48346 Ostbevern Tel.: 02532/81-0 Fax: 02532/81-112 h ttp ://w w w .friwo.de MPP15 M - 5V Firmo / Compony Distribution Ge r ät e ty p / Typ FW7555M/05 Artikel-Nr. / Order-No.


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    D-48346 MPP15 FW7555M/05 FW7555M 7555M MPP15M Q02747 PDF