fbga Substrate design guidelines
Abstract: FR4 substrate epoxy dielectric constant 4.4 FR4 substrate with dielectric constant 4.4 relative permittivity of fr4 FR4 epoxy dielectric constant 4.2 FR4 4.9 dielectric constant FR4 epoxy dielectric constant 4.4 FR4 dielectric constant 4.9 FR4 dielectric constant and loss tangent at 2.4 G EP2S15
Text: Section VI. PCB Layout Guidelines This section provides information for board layout designers to successfully layout their boards for Stratix II devices. These chapters contain the required PCB layout guidelines and package specifications. This section contains the following chapters:
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smd transistor M7A
Abstract: ED-7304-1 smd m7a uPD4011BG ED730 EIA and EIAJ tape standards ED-7417 EIA and EIAJ standards ED-7409 IEC-Publication-747
Text: CONTENTS 1. STANDARDIZATION OF PACKAGES 1.1 EIAJ Standards 1.2 JEDEC Standards 1.3 IEC Standards 2. NAME'S OF NEC'S PACKAGES 3. PACKAGE CODES BY EIAJ 3.1 Construction of package code 4. DIMENSION SYMBOL AND EXAMPLE DIMENSIONS 4.1 Example of dimensions of packages
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PD41265L-12-E1
PD41256L
PD23C32000AGX-$
PD23C32000A
smd transistor M7A
ED-7304-1
smd m7a
uPD4011BG
ED730
EIA and EIAJ tape standards
ED-7417
EIA and EIAJ standards
ED-7409
IEC-Publication-747
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transistor smd G46
Abstract: fluke 52 k/j Thermocouple 7512 pin diodes in micro semi data sheet smd transistor marking ey SMD MARKING CODE h5 MCP Technology Trend BGA-64 pad AMD reflow soldering profile BGA SMD MARKING CODE l6 BGA Solder Ball 0.6mm
Text: FBGA User’s Guide Version 4.2 -XO\ 7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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N32-2400
22142J
transistor smd G46
fluke 52 k/j Thermocouple
7512 pin diodes in micro semi data sheet
smd transistor marking ey
SMD MARKING CODE h5
MCP Technology Trend
BGA-64 pad
AMD reflow soldering profile BGA
SMD MARKING CODE l6
BGA Solder Ball 0.6mm
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LGA 1156 PIN OUT diagram
Abstract: QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram
Text: DIP8-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.46 TYP. 2/Dec. 11, 1996 DIP14-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight (g)
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DIP8-P-300-2
DIP14-P-300-2
DIP16-P-300-2
DIP18-P-300-2
MIL-M-38510
MIL-STD-883
LGA 1156 PIN OUT diagram
QSJ-44403
LGA 1150 Socket PIN diagram
LGA 1155 Socket PIN diagram
IC107-26035-20-G
LGA 1151 PIN diagram
REFLOW lga socket 1155
IC107-3204-G
TB 2929 H alternative
LGA 1155 pin diagram
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LGA 1156 PIN OUT diagram
Abstract: QFP11T144-002 LGA 1156 Socket diagram 216-LQFP Wells-CTI 36 lead Flat Pack smd AAAS Wells-CTI LCC socket Wells-CTI 880 020 BGA136 Enplas drawings
Text: Preface Thank you for your continuing loyalty to Fujitsu's semiconductor products. Electronic equipment is continually becoming smaller, lighter, and less expensive while also growing more advanced in terms of function and performance. As a result, applications for semiconductor devices such as IC and
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 256MB DDR2 SDRAM SO-DIMM EBE25UD6ABSA 32M words x 64 bits, 1 Rank Description Features The EBE25UD6ABSA is 32M words × 64 bits, 1 rank DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 4 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and
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256MB
EBE25UD6ABSA
EBE25UD6ABSA
M01E0107
E0553E20
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DDR2-400
Abstract: DDR2-533
Text: DATA SHEET 256MB DDR2 SDRAM SO-DIMM EBE25UD6ABSA 32M words x 64 bits, 1 Rank Description Features The EBE25UD6ABSA is 32M words × 64 bits, 1 rank DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 4 pieces of 512M bits DDR2 SDRAM sealed in FBGA package. Read and write
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256MB
EBE25UD6ABSA
EBE25UD6ABSA
M01E0107
E0553E21
DDR2-400
DDR2-533
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SA0149
Abstract: DDR2-400 DDR2-533 EBE52UD6ABSA EBE52UD6ABSA-4A-E EBE52UD6ABSA-5C-E SSTL-18
Text: DATA SHEET 512MB DDR2 SDRAM SO-DIMM EBE52UD6ABSA 64M words x 64 bits, 2 Ranks Description Features The EBE52UD6ABSA is 64M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and
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512MB
EBE52UD6ABSA
EBE52UD6ABSA
M01E0107
E0418E30
SA0149
DDR2-400
DDR2-533
EBE52UD6ABSA-4A-E
EBE52UD6ABSA-5C-E
SSTL-18
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DDR2-400
Abstract: DDR2-533 EBE52UD6ABSA EBE52UD6ABSA-4A-E EBE52UD6ABSA-5C-E
Text: DATA SHEET 512MB DDR2 SDRAM SO-DIMM EBE52UD6ABSA 64M words x 64 bits, 2 Ranks Description Features The EBE52UD6ABSA is 64M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA package. Read and write
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EBE52UD6ABSA
EBE52UD6ABSA
M01E0107
E0418E31
DDR2-400
DDR2-533
EBE52UD6ABSA-4A-E
EBE52UD6ABSA-5C-E
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altera stratix II fpga
Abstract: DDR2 sdram pcb layout guidelines vhdl code for watchdog timer of ATM
Text: Stratix II Device Handbook, Volume 2 101 Innovation Drive San Jose, CA 95134 www.altera.com SII5V2-4.3 Copyright 2007 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and
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free transistor equivalent book
Abstract: vhdl code for watchdog timer of ATM DDR2 sdram pcb layout guidelines diode handbook Scan Tutorial Handbook Volume I BT 1120 fpga stratix II ep2s180
Text: Stratix II Device Handbook, Volume 2 101 Innovation Drive San Jose, CA 95134 www.altera.com SII5V2-4.5 Copyright 2009 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and
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s29gl032n90
Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
Text: covPG00-00071e.fm 1 ページ 2007年5月10日 木曜日 午前11時29分 For further information please contact: Japan FUJITSU LIMITED Electronic Devices Business Unit Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,
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covPG00-00071e
PG00-00071-2E
s29gl032n90
MB15H121
S29GL064N90
s29gl256p90
S29GL01GP13
S29GL128P90
MB86A20
S29AL008J55
S29AL016J55
s29gl128p11
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DDR2-400
Abstract: DDR2-533 DDR2-667 EBE11UD8AESA EBE11UD8AESA-4A-E EBE11UD8AESA-5C-E EBE11UD8AESA-6E-E
Text: DATA SHEET 1GB DDR2 SDRAM SO-DIMM EBE11UD8AESA 128M words x 64 bits, 2 Ranks Description Features The EBE11UD8AESA is 128M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and
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EBE11UD8AESA
EBE11UD8AESA
M01E0107
E0589E30
DDR2-400
DDR2-533
DDR2-667
EBE11UD8AESA-4A-E
EBE11UD8AESA-5C-E
EBE11UD8AESA-6E-E
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512MB DDR2 SDRAM SO-DIMM EBE52UD6AFSA 64M words x 64 bits, 2 Ranks Description Features The EBE52UD6AFSA is 64M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and
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EBE52UD6AFSA
EBE52UD6AFSA
M01E0107
E0722E20
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 256MB DDR2 SDRAM SO-DIMM EBE26UC6AASA 32M words x 64 bits, 2 Ranks Features The EBE26UC6AASA is 32M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 8 pieces of 256M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and
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EBE26UC6AASA
EBE26UC6AASA
E0464E10
M01E0107
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 512MB DDR2 SDRAM SO-DIMM EBE52UD6ABSA 64M words x 64 bits, 2 Ranks Features The EBE52UD6ABSA is 64M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA package. Read and write
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EBE52UD6ABSA
EBE52UD6ABSA
M01E0107
E0418E31
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512MB DDR2 SDRAM SO DIMM EBE52UD6ABSA 64M words x 64 bits, 2 Ranks Description Features The EBE52UD6ABSA is 64M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and
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EBE52UD6ABSA
EBE52UD6ABSA
M01E0107
E0418E10
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CK1115
Abstract: DDR2-400 DDR2-533 EBE26UC6AASA-4A-E EBE26UC6AASA-4C-E EBE26UC6AASA-5C-E
Text: PRELIMINARY DATA SHEET 256MB DDR2 SDRAM SO-DIMM EBE26UC6AASA 32M words x 64 bits, 2 Ranks Description Features The EBE26UC6AASA is 32M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 8 pieces of 256M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and
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EBE26UC6AASA
EBE26UC6AASA
M01E0107
E0464E10
CK1115
DDR2-400
DDR2-533
EBE26UC6AASA-4A-E
EBE26UC6AASA-4C-E
EBE26UC6AASA-5C-E
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E0722
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512MB DDR2 SDRAM SO-DIMM EBE52UD6AFSA 64M words x 64 bits, 2 Ranks Description Features The EBE52UD6AFSA is 64M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and
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EBE52UD6AFSA
EBE52UD6AFSA
M01E0107
E0722E10
E0722
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DDR2-400
Abstract: DDR2-533 EBE26UC6AASA-4A-E EBE26UC6AASA-4C-E EBE26UC6AASA-5C-E
Text: PRELIMINARY DATA SHEET 256MB DDR2 SDRAM SO-DIMM EBE26UC6AASA 32M words x 64 bits, 2 Ranks Features The EBE26UC6AASA is 32M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 8 pieces of 256M bits DDR2 SDRAM sealed in FBGA package. Read and write
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EBE26UC6AASA
EBE26UC6AASA
E0464E11
DDR2-400
DDR2-533
EBE26UC6AASA-4A-E
EBE26UC6AASA-4C-E
EBE26UC6AASA-5C-E
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DDR2-533
Abstract: DDR2-667 EBE11UD8AGSA EBE11UD8AGSA-5C-E EBE11UD8AGSA-6E-E EDE5108AGSE-5C-E EDE5108AGSE-6E-E
Text: DATA SHEET 1GB DDR2 SDRAM SO-DIMM EBE11UD8AGSA 128M words x 64 bits, 2 Ranks Description Features The EBE11UD8AGSA is 128M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and
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EBE11UD8AGSA
EBE11UD8AGSA
M01E0107
E0827E10
DDR2-533
DDR2-667
EBE11UD8AGSA-5C-E
EBE11UD8AGSA-6E-E
EDE5108AGSE-5C-E
EDE5108AGSE-6E-E
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 1GB DDR2 SDRAM SO-DIMM EBE11UD8AESA 128M words x 64 bits, 2 Ranks Description Features The EBE11UD8AESA is 128M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and
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EBE11UD8AESA
EBE11UD8AESA
M01E0107
E0589E20
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EDE5116AFSE-4A-E
Abstract: EDE5116AFSE-5C-E EDE5116AFSE-6E-E DDR2-533 DDR2-667 EBE52UD6AFSA EBE52UD6AFSA-5C-E EBE52UD6AFSA-6E-E SSTL-18
Text: DATA SHEET 512MB DDR2 SDRAM SO-DIMM EBE52UD6AFSA 64M words x 64 bits, 2 Ranks Description Features The EBE52UD6AFSA is 64M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and
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EBE52UD6AFSA
EBE52UD6AFSA
M01E0107
E0722E30
EDE5116AFSE-4A-E
EDE5116AFSE-5C-E
EDE5116AFSE-6E-E
DDR2-533
DDR2-667
EBE52UD6AFSA-5C-E
EBE52UD6AFSA-6E-E
SSTL-18
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512MB DDR2 SDRAM SO-DIMM EBE52UD6ABSA 64M words x 64 bits, 2 Ranks Description Features The EBE52UD6ABSA is 64M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and
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EBE52UD6ABSA
EBE52UD6ABSA
M01E0107
E0418E20
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