47nj capacitor
Abstract: EWS 100-24 NTC 100-11 AQ105 HK0603 HK1005 HK1608 HK2125 HKQ0603 LK1005
Text: Application Cellular Phone Applications cently the of daily life. Re ity ss ce ne te lu are an abso sleek high -end obile phones between the d Nowadays, m ze ri la po e c has becom m ore on ba si phone market end, fo cu si ng global mobile er w lo e th th ose on
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VR1005BBA080
VR1005DDA080
VR1005AAA080
VR1005CCA080
150pF
VR105C5R0AAA
VR105C3R3BAA
47nj capacitor
EWS 100-24
NTC 100-11
AQ105
HK0603
HK1005
HK1608
HK2125
HKQ0603
LK1005
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Untitled
Abstract: No abstract text available
Text: FEDL67Q4060-01 Issue Date: Jan. 21, 2008 ML67Q4060/61/50/51 32-bit General-Purpose ARM-Based Microcontroller OVERVIEW This LSI is a general-purpose microcontroller that integrates peripheral functions such as I2C, I2S, and various serial interfaces. It uses the ARM7TDMITM 32-bit RISC CPU developed by ARM Limited as its core.
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FEDL67Q4060-01
ML67Q4060/61/50/51
32-bit
ML67Q4050/ML67Q4060
33MHz
128KB
ML67Q4051
ML67Q4061)
ML67Q4050
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diode smd ED 84
Abstract: smd transistor NG
Text: FSYC9260D, FSYC9260R Semiconductor August 1998 Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs File Number 4569 Features • 2 8 A , -200V , rQg ONi = 0.130J2 T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r • Total D ose
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FSYC9260D,
FSYC9260R
1-800-4-HARR
diode smd ED 84
smd transistor NG
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5514f
Abstract: TO220H APT5514 TO-220H
Text: ADVANCED POWER TECHNOL OGY OSE D | QESVTQT □ODDEL.4 □ | T-3^-lV APT6014FN 600V 43A 0.14 Q APT5514FN 550V 43A 0.14 Q POWER MQS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS *D . 'dm v gs All Ratings: Tc « 25°C unless otherwise specified.
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APT6014FN
APT5514FN
250uA)
Vol320
151ln.
5514f
TO220H
APT5514
TO-220H
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52D273K
Abstract: mc5201 685k 100v capacitor MC62D MC52C1 J400 wc52 MC52H s
Text: OSE D ELECTRONIC CONCEPTS INC A -o s-n -o -? B5ES70l4 DQ00aa5 H Dimensional Data OPERATING TEMPERATURE RANGE 50 —55°C to + 125°C w ithout derating. CAPACITANCE RANGE Cap. in fif .001/uF to 100/iF. 75 VDCW iVDCVV .Cat. No. Size . teatJ j fb ri1 0 & lirlnd w s
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B5ES70l4
DQ00aa5
MC52C103K
MC52C123K
MC52C153K
MCS2C183K
MC52C223K
001/uF
100/iF.
MC52D;
52D273K
mc5201
685k 100v capacitor
MC62D
MC52C1
J400
wc52
MC52H s
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Untitled
Abstract: No abstract text available
Text: FSS913AOD, FSS913AOR Semiconductor August 1998 10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features • 10A , -100V , rQg ONi = 0.280J2 T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r • Total D ose - File Number 4451.2
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FSS913AOD,
FSS913AOR
-100V,
-100V
280J2
1-800-4-HARR
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Untitled
Abstract: No abstract text available
Text: ELECTRONIC C ONC E P T S I NC OSE 3E25704 PQDOEit. fl D 3225704 ELECTRONIC CONCEPTS INC 05E 0 0 2 9 6 / - O S '- / S ' D Metallized Polypropylene Capacitor Capacitors Plastic Film Wrap, Epoxy End Fill) Type MP12 In 1 9 7 3 , E lectro nic C oncepts, In c. received a substantial research
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3E25704
L64-11Q
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AOI211
Abstract: MX08 IC TTL 7400 schematic AOI33 8 bit full adder "8 bit full adder" LA01 BCD-TO-7-SEGMENT DECODER 74151H TR-C06
Text: ÉNATL SEUICOND {MEMORY} OSE D | b S O llBb P 0 bl3Cm FGC Series t J^p^ Advanced 2-MlCrOll CMOS Gate Array Family fa T rc h T ld ASchlum bergerCom pany Description Array Organization The FGC Series is an advanced, high performance CMOS gate array family designed for LSI implementation of existing
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FGC6000
7482H
7483H
7485H
7486H
7487H
74125H
74182H
74242H
74244H
AOI211
MX08
IC TTL 7400 schematic
AOI33
8 bit full adder
"8 bit full adder"
LA01
BCD-TO-7-SEGMENT DECODER
74151H
TR-C06
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Untitled
Abstract: No abstract text available
Text: HOLTEK r r HT16270 RAM Mapping 64 x16 LCD Controller for I/O mC LCD Controller Product Line Selection Table HT162X HT1620 HT1621 HT1622 HT16220 HT1623 HT1625 HT1626 HT1627 HT16270 COM 4 4 8 8 8 8 16 16 16 SEG 32 32 32 32 48 64 48 64 64 B uilt-in Ose. V V V
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HT16270
HT162X
HT1620
HT1621
HT1622
HT16220
HT1623
HT1625
HT1626
HT1627
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Untitled
Abstract: No abstract text available
Text: FSL23A0D, FSL23A0R D ata S h eet 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs June 1999 F ile N u m b er 4476.2 Features • 6A , 2 0 0 V , rQg ONi = 0.350J2 • Total D ose T h e D iscrete Products O pe ra tio n of Harris Corporation,
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FSL23A0D,
FSL23A0R
350J2
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: FSJ055D, FSJ055R Data Sheet 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1999 File Number 4250.4 Features • 7 0 A , 60V, rQg ONi = 0 .0 1 2£2 • Total D ose T h e D iscrete Products O pe ra tio n of Harris has d evelo ped a
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FSJ055D,
FSJ055R
1-800-4-HARRIS
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32kx8 sram
Abstract: VSS115 32kxS
Text: Honeywell Advance Information HC80820 256K X 8 RADIATION-TOLERANT SRAM FEATURES R A D IA TIO N OTHER • Total D ose Hardness at Tactical Level • S pare Mem ory Chip can be Substituted O n-The-Fly • Soft Error R ate of <1 x1 O'5 upsets/bit-day or <1 upset/module-day
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HC80820
PINOUR19
BADDR18
BADDR17
BADDR16
BADDR15
122-lead
32kx8 sram
VSS115
32kxS
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IC 7413
Abstract: 74LS13PC schmitt trigger 7413 ic 74ls13
Text: NATIONA L SENICOND -CLOGIO OSE D | b S D H 5 5 Q0b3bS0 □ | 13 c o r JNECT ON DIAG RAM PIN OUT A 54/7413 54LS/74LS13 DUAL 4-INPUT SCHMITT TRIGGER 1 ORDERING CODE: See Section 9 COMMERCIAL GRADE PIN PKGS Vcc = +5.0 V ±5%, T a = 0° C to +70° C OUT MILITARY GRADE
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54LS/74LS13
7413PC,
74LS13PC
7413DC,
74LS13DC
7413FC,
74LS13FC
5413DM,
54LS13DM
5413FM,
IC 7413
schmitt trigger 7413
ic 74ls13
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HS1-6504R
Abstract: F0f13 IC MARKING A60
Text: HS-6504RH S Radiation Hardened 4096 X 1 CMOS RAM December 1992 Features • • • • • • • • • • • • • • Pinouts Total D ose 1 x 10s RAD S i D ata U pset > 1 0 8 RAD (SIVs Latch-U p Free To > 1 x 1012 RAD (S I)/s Low Pow er Standby 1100|iW M ax
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HS-6504RH
HS1-6504RH
150ns
HS-6504RH/RRH
HS1-6504R
F0f13
IC MARKING A60
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electronic concepts inc
Abstract: No abstract text available
Text: Specifications ELECTRONIC CONCEPTS INC OSE D • IN T E R N A L C O N S T R U C T IO N 3S5S704 00DD30I fl ■ D /? 'OS ~ / S <2 ? Dimensional Data Extended foil winding non-inductive ENCLOSURE Plastic film case with epoxy end seal. T E R M IN A L S Terminal leads are solid wire of tinned copper
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3S5S704
00DD30I
MIL-STD-202.
L85-116
electronic concepts inc
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BC119
Abstract: 2N1613 fairchild BSY90 BSX20 NPN TRANSISTORS LIST 2N915 itt 2222 bfr36 2N2369A 2N914
Text: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N P N Silicon High Speed Saturated Switching Transistors Metal Can T O IS R E FE R E N C E T A B L E For medium speed - see General P u rp ose Section. C H A R A C T E R I S T I C S @ 25"C
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BSX20
35250H
BSX26
35251F
2N914
35252D
2N2369
35253B
2N2369A
35254X
BC119
2N1613 fairchild
BSY90
NPN TRANSISTORS LIST
2N915
itt 2222
bfr36
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BUL 380
Abstract: E1017 R52KF8A
Text: 4855452 OSE D | 4Ö5S452 OGDflOSb fil- 08056 D T ^ a 3 ~ ¿ 13 D ata Sheet No. P D - 2 . 1 8 7 I O R l in te r n a tio n a l, r e c t i f i e r INTERNATIONAL RECTIFIER R52KF SERIES 800-600 VOLTS RANGE REVERSE RECOVERY TIME I.Qus 1150 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES
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R52KF
R52KF8A.
D0-200AC
E1017
BUL 380
R52KF8A
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R23AF 1200-1000
Abstract: Q7T4 R23AF series soft fast recovery rectifier diode DO-200AA R23AF
Text: m — OSE D 1 4öh545£ OODTTMS b | I I 02E 07942 D T V ¿S3 - =3 3 Data Sheet No. PD-2.111 IO R I N T E R N A T I O N A L RECTIFIER iNTtKNATlONAL RL e n i - 1 ER R23AF SERIES 1200-1000 VOLTS RANGE REVERSE RECOVERY TIME 1.0//S 280 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES
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DQ7ci45
R23AF
R23AF1QA.
D0-200AA
E1017
R23AF 1200-1000
Q7T4
R23AF series soft fast recovery rectifier diode
DO-200AA
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Untitled
Abstract: No abstract text available
Text: A L U M IN U M E LE C T R O LY T IC C A PA C IT O RS PC [ For General ] Screw Term inal Type o f A lum inum Electro lytic C a p a cito rs G en eral Purp ose ELECTRICAL CHARACTERISTICS Rated Voltage : 6.3 ~ 100V / I 60 ~ 450V Operating Temperature : -40° ~ +85°C / -25° — t85°C
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22000pF
Requireme28300
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Untitled
Abstract: No abstract text available
Text: T e st P o in t T e r m in a ls w ith A c c u - L o k o r P re ss -F it M o u n t in g Lo ose Part No. 1032 1033 R eeled P art No. 6032-6 6033-6 M ounting Type Press-Fit Press-Fit M aterial T hickness/ Type 0.020" 0.51mm Brass 0.032" (0.81 iron) Brass
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ZPT81-TP
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY RECTIFIERS OPERATING AMD STORAGE TEMPERATURE M a xim u m Peak SURGE PART NUMBER M a xim u m A verage R e ctifie d C urre n t M a x im u m M a x im u m F o rw ard Peak @ H alf-W ave . R esistive Load S urge C urre n t @ 8 .3 m s 60H z S up erim p ose d
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FR101
FR105
FR106
FR107
FR101SG
102SG
103SG
104SG
105SG
106SG
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AT41511-TR1
Abstract: AT-41511-TR1
Text: W h a t HEWLETT m L 'fiM PA C K A R D Low C ost G eneral P u rp ose T ran sistors Technical Data AT-41511 AT-41586 Features D escription • L ow N oise F ig u re 1.4 dB Typical a t 1 GHz 1.7 dB Typical a t 2 GHz • H ig h A sso c ia te d G ain 17.0 dB Typical a t 1 GHz
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AT-41511
AT-41586
AT-41586
AT-41511-TR1
AT-41511-TR2
RS-481,
AT-41586-TR1
AT-41586-TR2
AT41511-TR1
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1DI300A-120
Abstract: 1DI400D-100 ETK81-050 1D500A-030 ETK85-050 ID200A-020 1D200A-020 1DI200A-120 1DI200A-140 1DI200Z-100
Text: s 001 0Ï üüfi 9 006 009 O’l 0092 921—0 * - 091 009 001 0'9 0U2 001 9 009 009 0 9 0 -1 8 1 1 3 Si 5 01 0*1 os* 9 002 009 0*1 0002 9 2 1 -0 * - 091 ose 91 9* 091 Si 9 # 09* 009 0 9 0 - 9 8M 13 09 9 001 0*1 os* 9 oo 009 0*1 0002 LO T o OSI ooe OS ‘ o*e
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H-101
1DI300A-120
1DI400D-100
ETK81-050
1D500A-030
ETK85-050
ID200A-020
1D200A-020
1DI200A-120
1DI200A-140
1DI200Z-100
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ETK85-050
Abstract: ID500A-030 lt 5240 ETK81-050 H-17 H-18 H-19 1DI 150
Text: s 001 0 Ï üüfi 9 006 009 O’ l 0092 921— 0 * - 091 009 001 0'9 0U2 001 9 009 009 0 9 0 -1 8 1 1 3 Si 5 01 0*1 os* 9 002 009 0*1 0002 92 1 -0 *- 091 ose 91 9* 091 Si 9 # 09* 009 0 9 0 - 9 8M 13 09 9 001 0*1 os* 9 o o 009 0*1 0002 LO T o OSI ooe OS ‘ o*e
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H-101
ETK85-050
ID500A-030
lt 5240
ETK81-050
H-17
H-18
H-19
1DI 150
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