BFP650
Abstract: BGA420 T-25
Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology
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BFP650
OT343
BFP650
BGA420
T-25
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RBS 3000
Abstract: BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON
Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology
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BFP650
OT343
RBS 3000
BFP650
BFP650 noise figure
BGA420
T-25
RBS INFINEON
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germanium transistors NPN
Abstract: BFP420F BFP650F GMA marking marking r5s
Text: BFP650F NPN Silicon Germanium RF Transistor* • For medium power amplifiers and driver stages 3 • High OIP 3 and P-1dB 2 4 1 • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz • 70 GHz fT - Silicon Germanium technology
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BFP650F
BFP650may
germanium transistors NPN
BFP420F
BFP650F
GMA marking
marking r5s
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PDF
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transistor 1T
Abstract: BFP650 equivalent
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability
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BFP650
VPS05605
OT343
Jul-01-2003
transistor 1T
BFP650 equivalent
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PDF
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BFP650 noise figure
Abstract: data sheet germanium diode germanium transistors NPN npn germanium BFP650
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability
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BFP650
VPS05605
OT343
curr26
Mar-27-2003
BFP650 noise figure
data sheet germanium diode
germanium transistors NPN
npn germanium
BFP650
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PDF
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BFP650
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
Jan-08-2004
BFP650
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PDF
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RBS 3000
Abstract: 1g28
Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology
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BFP650
OT343
RBS 3000
1g28
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PDF
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PH marking code
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
PH marking code
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PDF
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Untitled
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
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PDF
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Untitled
Abstract: No abstract text available
Text: BFP650F Linear Low Noise SiGe:C Bipolar RF Transistor • For medium power amplifiers and driver stages 3 • Based on Infineon' s reliable high volume Silicon 2 4 1 Germanium technology • High OIP3 and P -1dB • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz
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BFP650F
AEC-Q101
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PDF
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marking r5s
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability
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BFP650
VPS05605
OT343
Oct-22-2002
marking r5s
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PDF
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Untitled
Abstract: No abstract text available
Text: BFP650F NPN Silicon Germanium RF Transistor* • For medium power amplifiers and driver stages 3 • High OIP 3 and P-1dB 2 4 1 • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz • 70 GHz fT - Silicon Germanium technology
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BFP650F
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gummel
Abstract: oscilators BFP650
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
Oct-13-2003
gummel
oscilators
BFP650
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PDF
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80mAF
Abstract: 6069 marking
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
Aug-16-2004
80mAF
6069 marking
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RAKON TXO
Abstract: RAKON TXO 200 TXO710 TX2060 TXO700 TXO500 TXO710R-3 TCXO rakon TXO rakon CAT017
Text: PRODUCT SPECIFICATION MODEL TXO700 Temperature Compensated Crystal Oscillators Low profile surface mountable TCXO available in custom frequencies from 8.2MHz to 32MHz with a clipped sinewave output Product Description This Colpitts oscillator uses the direct two-port temperature
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TXO700
32MHz
VTXO700
CAT098
20k//5pF
10k//10pF
CAT142
TXO500
CAT016)
TXO700
RAKON TXO
RAKON TXO 200
TXO710
TX2060
TXO710R-3
TCXO rakon
TXO rakon
CAT017
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PDF
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SMD fuse P110
Abstract: 74c914 transistor b733 transistor SMD p113 EPSON C691 MAIN npn transistor smd w19 smd diode c539 transistor b771 transistor c1015 transistor c1008 011
Text: 4 3 Figure 1: 2 1 ML300 CPU Table 1: ML300 CPU Virtex-II Pro Based Virtex-II Pro Based Block Diagram Table of Contents D D Infiniband HSSCD2 Dual Gig-E Fiber (Quad) Serial ATA (Dual) Sheet 1: Sheet 2: Sheet 3: Sheet 4: Sheet 5: Sheet 6: Sheet 7: Sheet 8:
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ML300
RP326
RP324)
RP340
RP341)
SMD fuse P110
74c914
transistor b733
transistor SMD p113
EPSON C691 MAIN
npn transistor smd w19
smd diode c539
transistor b771
transistor c1015
transistor c1008 011
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upd4069ubc
Abstract: DCRHYC12.00
Text: TYPE Ceramic Resonators CRHYC CRHYCP セラミック発振子 TYPE CRHYC CERASONATOR MHz Band with built-in capacitors CRHYCP for taping 5.0Max. 10.0 Max. 8.0Max. STAMP (3) (1) (2) CRHYCP (CRHYC for Taping) (3) OUT (2) G <内部接続図> 5.0 CRHYC (1)
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613MHz
DCRHYC10
DCRHYC12
PD4069UBC
upd4069ubc
DCRHYC12.00
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Untitled
Abstract: No abstract text available
Text: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community MSP430FR5969, MSP430FR59691, MSP430FR5968, MSP430FR5967 MSP430FR5959, MSP430FR5958, MSP430FR5957 MSP430FR5949, MSP430FR5948, MSP430FR5947, MSP430FR59471 www.ti.com SLAS704C – OCTOBER 2012 – REVISED JUNE 2014
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MSP430FR5969,
MSP430FR59691,
MSP430FR5968,
MSP430FR5967
MSP430FR5959,
MSP430FR5958,
MSP430FR5957
MSP430FR5949,
MSP430FR5948,
MSP430FR5947,
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SLAU367
Abstract: No abstract text available
Text: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community MSP430FR5869, MSP430FR5868, MSP430FR5867, MSP430FR58671 MSP430FR5859, MSP430FR5858, MSP430FR5857 MSP430FR5849, MSP430FR5848, MSP430FR5847, MSP430FR58471 www.ti.com SLASE34A – MAY 2014 – REVISED JUNE 2014
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MSP430FR5869,
MSP430FR5868,
MSP430FR5867,
MSP430FR58671
MSP430FR5859,
MSP430FR5858,
MSP430FR5857
MSP430FR5849,
MSP430FR5848,
MSP430FR5847,
SLAU367
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PDF
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MIL-PRF-55310
Abstract: crystal oscillator burn-in data 209 hybrid 410 MILO Hybrid Microcircuits GENERAL INSTRUMENT
Text: Table of Contents Q-TECH CORPORATION Specification Control Drawing Scope Scope Part Number Applicable Documents Specifications and Standards Specifications - Military Standards - Military Conflicting Requirements Customer Purchase Order Special Requirements
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EIA-1608
Abstract: No abstract text available
Text: Introduction to BEYSCHLAG TCT 0603 TCU 0805 Flat Chip Resistor Products Trimmable Product Overview Flat Chip Resistor Products MELF Resistor Products Leaded Resistor Products Overglaze Outer Termination plated pure Tin on Nickel Resistor Arrays and Networks
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power supply scr 30 100 20000
Abstract: No abstract text available
Text: PIEZO TECHNOLOGY INC S'îE D • 7140704 0000253 T « P T E I VOLTAGE CONTROLLED CRYSTAL OSCILATORS T - 50-23 T'SO'Oy M/N X01061C HIGH FREQUENCY XO1045C X01195C X01140C 5 - 80 14 - 16 AND 28-32 20 - 50 10 - 150 12.26 ± 50 ppm 20.48 To be lockable 30 ± 0.2%
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OCR Scan
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X01061C
X01061C
XO1045C
X01195C
X01140C
power supply scr 30 100 20000
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PDF
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marking vap
Abstract: No abstract text available
Text: TCT 0603 TCU 0805 Flat Chip R esistor Products T rim m a b le O verglaze Outer T erm inatio n plated pure Tin on N ickel Cerm et Resistive Layer 96 % A lum in a C eram ic S ubstrate Term inatio n Base 60 BEYSCHLAG Catalogue 1999 TCT 0603 Flat Chip Resistor P roducts
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OCR Scan
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Untitled
Abstract: No abstract text available
Text: Features * Utilizes the AVR RISC Architecture * AVR - High-performance and Low-power RISC Architecture - 118 Powerful Instructions - Most Single Clock Cycle Execution - 32 x 8 General Purpose Working Registers - Up to 10 MIPS Throughput at 10 MHz * Data and Nonvolatile Program Memory
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OCR Scan
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1004BS--
04/99/xM
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PDF
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