ORIGIN DIODE Search Results

Contextual Info: Series 101 by Mel Clark & Kent Walters, Microsemi Scottsdale A Primer on Transient Voltages.and their effects on microchips Origin of Transient Voltages Lightning, inductive load switching, and electrostatic discharge ESD are the most common sources of

BAR66

Abstract: BA592 BA595 BA597 BA885 BAR14 BAR63-03W BAR64 BAR65-03W
Contextual Info: Application Note No. 058 Silicon Discretes Dr. Reinhard Gabl Predicting Distortion in Pin-Diode Switches This note describes the origin of distortion in pin-diode switches. Distortion is related to physical parameters of the diode and operating conditions and thus can be minimized by an appropriate diode

Thyristor 10kV

Abstract: static induction Thyristor 10kv transformer "static induction thyristor"
Contextual Info: MicroNOTE #101 by: A Primer On Transient Voltages And Their Effects On Microchips Origin of Transient Voltages Lighting, inductive load switching, and electrostatic discharge ESD are the most common sources of electrical overstress which produce transient voltages. Transients are narrow

A7KV

Abstract: Lightning protection
Contextual Info: MicroNOTE #101 by: A Primer On Transient Voltages And Their Effects On Microchips Origin of Transient Voltages Lightning, inductive load switching, and electrostatic discharge ESD are the most common sources of electrical overstress which produce transient voltages. Transients are narrow

Ho56

Abstract: 50kV MD-50X1 312 ho
Contextual Info: #50kV^ SILICON HIGH VOLTAGE RECTIFYING DIODES MD-50X1 = ORIGIN ELECTRIC CO LTD • 4t * I • '} '& = > > ; • ? V X \ &>■$>— $> -y 2. • fflü I . v — 5ÖE T> i\ ■ • • • £ * & (Ta = 2 5 ic, » + Characteristics(Ta = 25TC in oil, unless otherwise specified)

IH-001

Abstract: Scans-00137690 MGD-13N2 13kv Origin Electric
Contextual Info: SILICON HIGH VOLTAGE R EC TIFYIN G DIODES MGD-13N2 SÔE ORIGIN ELECTRIC CO LTD •mm æ • 13kV • 200mA i . 2. • ^ T a = 25°C !2fc I0RIJ FEATURES y~ . 1. The terminal insulated to the base. ~~(s t 2. Wide range and high junction temperature. APPLICATIONS

Contextual Info: EVALUATION LABORATORY Rating Report - Issue 2 Date - 23 July, 2004 Origin - PAR 985 Total Pages - 13 Fast Recovery Diode Types M2408N#020 to M2408N#060 Old Type No.: SM02-06CXC504 Author EL Check/Approval QA Approval S & M Approval N. A. Tarling Abstract The M2408N#020-060 fast recovery diode consists of a 50mm diameter silicon slice manufacturing

6000A 16 1

Abstract: m2408n
Contextual Info: EVALUATION LABORATORY Rating Report - Issue 2 Date - 23 July, 2004 Origin - PAR 985 Total Pages - 13 Fast Recovery Diode Types M2408N#020 to M2408N#060 Old Type No.: SM02-06CXC504 Author EL Check/Approval QA Approval S & M Approval N. A. Tarling Abstract The M2408N#020-060 fast recovery diode consists of a 50mm diameter silicon slice manufacturing

LU-12 relay

Abstract: PED relay
Contextual Info: Functional Description Figure 1 shows the switch characteristics of the relays. The relay exhibits an ON-resistance that is exception­ ally linear through the origin and up to the knee current /« . Beyond / K, the incremental resistance decreases, minimizing internal power dissipation. Overload cur­

PED relay

Contextual Info: Functional Description Figure 1 shows the switch characteristics of the relays. The relay exhibits an ON-resistance that is exception­ ally linear through the origin and up to the knee current /« . Beyond / K, the incremental resistance decreases, minimizing internal power dissipation. Overload cur­

NFM61R

Abstract: VDE0872 VDE0875N NFM41R 595D CDR105B CDR74B ML4861 NFM40R on board DC RFI suppression filters
Contextual Info: June 1996 Application Note 42007 Safety, EMI and RFI Considerations by Daryl Sugasawara and Jens Paetau INTRODUCTION The filtering of conducted and radiated noise is an intricate part of the design of a power supply or DC to DC converter. This Application Note addresses the origin of

IL5G

Contextual Info: SILICON FAST RECOVERY RECTIFYING DIODES räjai '& ORIGIN ELECTRIC CO LTD • # Ä • 2.5A 7 - f > t t • trr^0.8jus b ö l 3 0 7 4 ÜG0ÜD3Ö 452 • I ORI J. FEATURES 1. Io = 2.5A (with fin). 2. Low noise, soft recovery type. SM- 3 - r ■ ' I . ¥ ± S lS > 7 fE ;S *{ *

94-3252

Abstract: 28548 R295CH40
Contextual Info: EVALUATION LABORATORY - Issue 1 Date Origin - PAR 327 Total Pages Provisional Data - 30 August, 2000  Rating Report - 15   Distributed Gate Thyristor Types R295CH36 to R295CH40 Author Checked N. Tarling   Abstract Approved The R295CH36-40 Distributed Gate thyristor range features regenerative and interdigitated gating on a

1S1934

Abstract: 1S1935 1S1936 1S1937 1S1938 1S1939 S-20 icr 301 MI15
Contextual Info: ORIGIN ELECTRIC CO LTD SfiE J> • bfll3D7M OGGGDST HIT ■ ORI J SILICON RECTIFYING DIODES S-20 _r i • - tt! • 20A 7-f >fi\ g;$ " . - s • ? • > ? -> - 2 . • fflìÈ 1 0 0 V - 1 0 0 0 V 6 t i FEATURES 1. H igh re lia b ility , h erm etic se aled type.

origin diode

Abstract: MD-36N4 A1sm
Contextual Info: SILICO N HIGH VO LTA G E R E C TIFY IN G DIODE MD- 3 6 N4 • |J - ORIGIN ELECTRIC CO LT» • S S 5ÖE D 3gJS äft*<*#L'o 400mA o 2. • 2. K I 6 * - r 7° bôl3074 QQaQGS3 73T • I. FEATURES 1. Axial lead type. 2. Io = 400 mA. I0RIJ /~0 t-O J APPLICATIONS

MD-8H10

Abstract: MD-8N10 8H10 AS105
Contextual Info: SILIC O N HIGH VO LTA G E R E C T IF Y IN G DIODES 8 MD- 8 N H 10 ORIGIN ELECTRIC CO I . /< .y 2 . LTD SÔE D I bûl3 0 7 4 -f0 (70a ) (T a = 2 5 -C ) s te-f- Electrical characteristics Absolute maximum ratings Ite m s -fr X. Symbols U nit m Æ« m se

OS13-0650-04

Abstract: IEC60825-1 MAG45 marking code SAC TYCO electronics marking code date 6605704-1 diode os13
Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AA 22 R E VIS IO N S LTR DESCRIPTION A ECHANICAL: A 1-6610034-1 D TT YYWW ORIGIN Mag45tm us A A A REV PER EC OS13 - 0 6 5 0 - 0 4

1307H

Contextual Info: :i5fE ORIGIN ELECTRIC CO SILICON F A S T R E C O V E R Y RECTIFYING DIODES • 200V ~ 800V SM- • 2 . 5 A 7>f LTD 1. SÔE D I . x -f - j.f 2. > m m tt z o n r n jF R LÖ1307H *•' (2 .5 A . 2 . ' / 7 1 - i J A a ' I J - H -f x - ; -i • Æ fê . r 422

HIGH VOLTAGE DIODE kv

Abstract: MZ-10HV MZ-10HTE1 MZ-13HTE1 MZ-4HV
Contextual Info: I5J S IL IC O N H IG H V O L T A G E Œ 7 x -Η ORIGIN • M Z -r ELECTRIC CO LTD SflE » . • /£*& Ta = 2 5 r , m * fi -s m a VP T ype I E # * b ö l3 Q 7 4 □ □ 00072 b^D I0RIJ FEATURES 1. High voltage zener diode (up to 10 kV . 2. Low differential resistance o f avalanche breakdow n area.

MD-125N08C

Abstract: "x-ray generator"
Contextual Info: raJ±î=E5iE ORIGIN l . 'J 'I ! k S IL IC O N H IG H V O L T A G E R E C T IF Y IN G D IO D E S MD- 100X08C> MD-125N08C ELECTRIC 3 CO LT]> SflE D • h 'fb itL T L 'S « , 2 . M EL-? — i.'0 • 2. * 7>'fe£7 J±#gifcJ30 • • lOOkV, FEATURES 1. Compact size high voltage diodes.

Contextual Info: SILIC O N HIGH VO LT A G E R EC T IFY IN G DIODES MD-12N H 10 • i a SflE J> m ORIGIN ELECTRIC CO LT» • Ît f i: I . • 12kV è < 7 ' < =7 L X ^ 2 . •E û t i (H ^ -ry ) . < n m m „ 2. C02U-• Æ fê (T a = 2 5 t ) C h a ra c te ristic s(T a = 2 5 °C ,

2831A

Abstract: 1S2827A 1S2828A 1S2830A SM15 1S282
Contextual Info: -m •íjfE • ffliÉ • 200V -1000V SM-1.5 ORIGIN ELECTRIC CO LTD 1. SflE T> . r • 1.5A □013074 O O G Ü O E b 70Ü « 0 R I J W Ë • t 0 I . OA • • APPLICATIONS 1. OA, FA equipments. TféíiType m it Symbols Unit ¡» s» « $ fil} >f » 3 $

Origin Electric

Abstract: H125 MD10N1 MD15N1 MD20N1
Contextual Info: SILICON HIGH VOLTAGE RECTIFYING DIODES J ± îl5 iE = M D r ORIGIN ELECTRIC CO LTD j N SöE D • 3 kV~20kV • 2 0 m A ~ 8 0 m A 5i4l 1 '> > J - X ' I I b613074 00000S0 T5T • O R I J -FEATURES 1. L ow re v e r s e curren t. 2. E x c e lle n t avalanche c h a r a c te r is t ic s .

A6062S-T5

Abstract: 1S1033 diodes ir mais 1S1034 1S1035 1S1036 1S1037 1S1038
Contextual Info: ijjft S-200 i ORIGIN ELECTRIC CO LTD ►f f l ü É •£ *§ 1 . m i n s a f f l o 2 . iE Í J l- iL f f lo T ^ a t - a J S ILIC O N RECTIFYING DIODES . . r SflE D L . B 1 3 0 7 H 0 0 0 0 0 3 4 • 2 0 0 V - 1 0 0 0 V • 2 0 0 A f l f l ? • • FEATURES