8PIN optocoupler 601
Abstract: HCPL 601
Text: 1 Chapter 1. Introduction 1.1 Optoisolator Safety Standards and Regulatory Environment Optoisolator applications often include environments where high voltages are present. The ability of the optoisolator or optocoupler to sustain and to isolate high voltages, both transient as well as
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SO-16
8PIN optocoupler 601
HCPL 601
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HCPL 601
Abstract: jedec package standards so8 cenelec IEC 1010-1 General Safety Requirements Optocoupler 601 6N137 OPTO-ISOLATOR 601 508 so8
Text: 1 Chapter 1. Introduction 1.1 Optoisolator Safety Standards and Regulatory Environment Optoisolator applications often include environments where high voltages are present. The ability of the optoisolator or optocoupler to sustain and to isolate high voltages, both transient as well as
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NTE3087
Abstract: No abstract text available
Text: NTE3087 Optoisolator High Speed, Open Collector, NAND Gate Output Description: The NTE3087 is an optoisolator which combines a GaAsP LED as the emitter and an integrated high gain multi–stage high speed photodetector. The output of the detector circuit is an open collector,
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NTE3087
NTE3087
2500Vrms
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NTE3090
Abstract: Optoisolator
Text: NTE3090 Optoisolator Schmitt Trigger Output Description: The NTE3090 is an optoisolator in a 6–Lead DIP type package and contains a gallium arsenide IRED optically coupled to a high–speed integrated detector with a Schmitt Trigger output. This device is
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NTE3090
NTE3090
Optoisolator
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NTE3041
Abstract: No abstract text available
Text: NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6–Lead DIP type package consisting of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: D High Current Transfer Ratio: 100% Min @ Spec Conditions
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NTE3041
526-NTE3041
NTE3041
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NTE3041
Abstract: No abstract text available
Text: NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6–Lead DIP type package consisting of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: D High Current Transfer Ratio: 100% Min @ Spec Conditions
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NTE3041
NTE3041
3550Vpk
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NSL-37V81
Abstract: No abstract text available
Text: NSL-37V81 Optoisolator Features 9.0 Compact, moisture resistant package Low LED current Passive resistance output - LED + 8.64 Description 5.1 1 2 This NSL-37V81 optoisolator consists of an LED input optically coupled to a photocell. The photocell resistance is high when the LED current is “off” and
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NSL-37V81
NSL-37V81
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NTE3088
Abstract: No abstract text available
Text: NTE3088 Optoisolator Silicon NPN High Voltage Phototransistor Output Description: The NTE3088 is a gallium arsenide LED optically coupled to a high voltge, silicon phototransistor in a 6–Lead DIP type package designed for applications requiring high voltage output. This device is
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NTE3088
NTE3088
330pps)
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1A transistor
Abstract: NTE3222 optoisolator high voltage high voltage diodes
Text: NTE3222 Optoisolator NPN Transistor Output Description: The NTE3222 is an optically coupled isolator in a 4–Lead DIP type package containing a GaAs light emitting diode and an NPN silicon phototransistor. Features: D High Isolation Voltage D High Collector–Emitter Voltage
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NTE3222
NTE3222
1A transistor
optoisolator high voltage
high voltage diodes
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CNC1S171
Abstract: ON3171
Text: This product complies with the RoHS Directive EU 2002/95/EC . Optoisolators CNC1S171 (ON3171) Optoisolator For isolated signal transmission • Features High current transfer ratio: CTR > 50% High I/O isolation voltage: VISO = 5 000 V[rms] (min.)
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2002/95/EC)
CNC1S171
ON3171)
E79920)
CNC1S171
ON3171
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NTE3092
Abstract: No abstract text available
Text: NTE3092 Optoisolator Open Collector, NPN Transistor Output Features: D High Isolation Voltage D High Speed: tPHL = 0.2µs, tPLH = 1.0µs Typ D Current Transfer Ratio: 19% Min Applications: D Digital Logic Isolation D Line Receiver Feedback Control D Power Supply Control
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NTE3092
NTE3092
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Untitled
Abstract: No abstract text available
Text: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 ICPL2601 High CMR, High Speed Optoisolator Circuit and Package Features Description Absolute Maximum Ratings
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ICPL2601
3000Vdc
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optoisolator
Abstract: OPTO-ISOLATOR optoisolator high voltage, high current KVA Advanced Technologies dc to dc Optoisolator
Text: KVA Advanced Technologies, Inc. Part Number #K V A -O I- 1 00M -0 0 1 HIGH SPEED OPTO-ISOLATOR June 1999 DESCRIPTION KEY POINTS ♦ Wide Band Width DC - 100 MHz The High Speed Optocoupler (optoisolator) pro♦ High Voltage Isolation vides high frequency isolation for analog signals. They are ideal for high speed isolated data
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Untitled
Abstract: No abstract text available
Text: LT3837 Isolated No-Opto Synchronous Flyback Controller FEATURES DESCRIPTION Senses Output Voltage Directly from Primary Side Winding—No Optoisolator Required n Synchronous Driver for High Efficiency n Supply Voltage Range 4.5V to 20V n Accurate Regulation Without User Trims
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LT3837
50kHz
250kHz
16-Lead
DFN-10,
MSOP-10E
200kHz
3837fd
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H11M3
Abstract: H11M4 diODE 1k
Text: ÖUALITY TECHNOLOGIES CORP S7E D Optoisolator Specifications. b * i 0 • H11M3, H11M4 Optoisolator GaAIAs Infrared Emitting Diode and Light Activated SCR The HI 1M3 and HI 1M4 contain a gallhim-aluminum-arsenide, infrared emitting diode coupled to a unique high voltage silicon controlled
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H11M3,
H11M4
74bbflSl
H11M3
H11M4
diODE 1k
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Untitled
Abstract: No abstract text available
Text: ÛUALITY TECHNOLOGIES CORP S7E D • 74hLiB51 GOOMlRb TTb Optoisolator Specifications _ H11D1-H11D4 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor * m il l im e t e r SYMBOL' A B C D «C ü T IK in
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74hLiB51
H11D1-H11D4
1D1-H11D4
E51868
0110b
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H11K1
Abstract: H11K
Text: Optoisolator Specifications H11K1, H11K2 Optoisolator GaAIAs Infrared Emitting Diode and Two NPN Silicon Photo-Darlington Amplifiers T h e H I IK series consists o f a gallium -alum inum -arsenide, infrared em itting diode coupled with two high voltage silicon Darlingtonconnected phocotransistors which have integral base-emitter resistors
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H11K1,
H11K2
INFRAR000,
H11K1
H11K
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H11DI
Abstract: No abstract text available
Text: Optoisolator Specifications H11D1-H11D4 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor INCHES ftiiLU M E T E R : MIN MAX MIN MAX CCATINjr. T h e H I I D I -H 1 1 D 4 a r e gallium arse n id e , in fra re d em ittin g
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H11D1-H11D4
H11DI
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HIIN2
Abstract: No abstract text available
Text: Optoisolator H11N1, H11N2, H11N3 Optoisolator GaAIAs Infrared Emitting Diode and MicrpprocessorCompatible High-Speed Schmitt Trigger T h e H I IN series has a gallium -alum inum -arsenide, in fra re d em itting d io d e optically co u p led across a glass isolating
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H11N1,
H11N2,
H11N3
HIIN2
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Untitled
Abstract: No abstract text available
Text: European “Pro Electron” Registered Types CNY33 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor T he CXY33 is a gallium arsenide, infrared em itting diode coupled with silicon high voltage phototransistors in a dual
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CNY33
CXY33
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hcpl2601
Abstract: HCPL-2601 HCPL2601 OPTOCOUPLER
Text: HCPL2601 OPTOCOUPLER/OPTOISOLATOR D 2 9 6 8 , NOVEMBER 198 6 • Gallium Arsenide Phosphide LED Optically Coupled to an Integrated Circuit Detector • High-Voltage Electrical Insulation . . . 3000 V DC Min • Internal Shield for Common-Mode Rejection •
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HCPL2601
E65085
HCPL2601
HCPL-2601
HCPL2601 OPTOCOUPLER
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11d2
Abstract: No abstract text available
Text: Optolsolator Specifications H11D1-H11D4 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor The H11D1-H11D4 are gallium arsenide, infrared emitting diodes coupled with silicon high voltage phototransistors in a dual in-line package. These devices are also available in
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H11D1-H11D4
H11D1-H11D4
0110b
11d2
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VCC VO GND
Abstract: BS9000
Text: Four Channel Low Input Current High Output Current TTL Compatible Optoisolator Module Isocom Lid. supplies high reliability devices for applications requiring an operating temperature range of -55°C to +125°C c.g. military applications . Devices supplied have completed rigorous testing,
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BS9000
1294/M)
BS9000,
VCC VO GND
BS9000
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HCPL2601
Abstract: No abstract text available
Text: HCPL2601 OPTOCOUPLER/OPTOISOLATOR SOOSOQ9 D296B. NOVEMBER 1986 • Gallium Arsenide Phosphide LED Optically Coupled to an Integrated Circuit Detector • High-Voltage Electrical Insulation . . . 3 0 0 0 V DC Min • Internal Shield for Common-Mode Rejection
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HCPL2B01
SOOS009
D296B.
E65085
HCPL2601
HCPL2601
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