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    OPTIMIZED CMOS-SOI PROCESS FOR HIGH PERFORMANCE RF SWITCHES Search Results

    OPTIMIZED CMOS-SOI PROCESS FOR HIGH PERFORMANCE RF SWITCHES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FM82DUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D Visit Toshiba Electronic Devices & Storage Corporation

    OPTIMIZED CMOS-SOI PROCESS FOR HIGH PERFORMANCE RF SWITCHES Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Optimized CMOS-SOI Process for High Performance RF Switches

    Abstract: No abstract text available
    Text: Optimized CMOS-SOI Process for High Performance RF Switches A. B. Joshi, S. Lee, Y. Y. Chen, and T. Y. Lee Skyworks Solutions, Inc., Irvine, CA Email: aniruddha.joshi@ieee.org ABSTRACT In recent years, CMOS on Silicon-on-Insulator has rapidly evolved as a mainstream technology for switches used in


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of


    Original     		PDF

    RF Switches Guide Signals In Smart Phones

    Abstract: No abstract text available
    Text: RF Switches Guide Signals In Smart Phones The myriad of different bands, modes, radios, and functionality found in a modern smart phone calls for the increased use of simple, high-performance RF switches as well as integrated switch modules. Kevin Walsh | September 2010


    Original     		SKY13309- 370LF SKY13323-378LF RF Switches Guide Signals In Smart Phones PDF

    stacked transistor shunt switch

    Abstract: stacked transistors SOI RF Peregrine 2000 stacked diplexer and duplexer for GSM and DCS ultra high frequency FETs or transistors SOI series shunt stacked FETs soi stacked FETs circulator s band switching circulator
    Text: 18| www.wirelessdesignmag.com COVER STORY| Integrating UltraCMOS Designs in GSM Front Ends G L O S S A RY O F A C R O N Y M S ASM - Antenna switch module BVDSS - Breakdown voltage drain-to-source, gate shorted CDMA - Code-division multiple access CMOS - Complimentary metal oxide semiconductor


    Original     		PDF

    gps exact um

    Abstract: navstar jammer circuit diagram mobile jammer circuit gps cellular "vehicle tracking" 1995 car signal jammer GPS chip integrat phased array antenna MICROWAVE DEVICES
    Text: DefenseElectronics Highly Integrated GPS Receiver Overcomes Jamming, Pinpoints Location From RF CMOS silicon-on-sapphire SOS technology, a monolithic low-power, radiation hardened GPS front-end — designed to overcome jamming has been developed for military/aerospace applications.


    Original     		PDF

    Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN

    Abstract: 180NM IBM
    Text: IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 11, NOVEMBER 2011 2613 Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Zhan-Feng Zhou, Chun-Wen Paul Huang, Member, IEEE, Christophe Masse, and John D. Cressler, Fellow, IEEE


    Original     		11b/g Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN 180NM IBM PDF

    PE94302

    Abstract: PE94302-EK
    Text: Advance Information PE94302 Product Description The PE94302 is a high linearity, 6-bit UltraCMOS RF Digital Step Attenuator DSA specifically optimized for rad-hard space applications. This 50-ohm RF DSA covers a 31.5 dB attenuation range in 0.5 dB steps. It provides both parallel and


    Original     		PE94302 PE94302 50-ohm PE94302-EK PDF

    RF6561

    Abstract: RF6261 RF6261B
    Text: RFRD6461 RFRD64613G PowerSmart Power Platform 3G POWERSMART™ POWER PLATFORM PCB Footprint: 7.6mm x 15.3mm x 1.02mm BATTERY RF DETECTOR OUT       Boost - Buck DCDC Converter 2 Component Placement Power Platform  RF6261B Power Amplifier:


    Original     		RFRD6461 RFRD64613G RF6261B RF6561 RFRD6461 DS120612 RF6261B) RF6561) RF6261 PDF

    RF6561

    Abstract: RF6261 RF6261B RFRD6461 WCDMA duplexer RF626 SP4T Antenna Switch RF65 rf coupler rf detector
    Text: RFRD6461 RFRD64613G PowerSmart Power Platform 3G POWERSMART™ POWER PLATFORM PCB Footprint: 7.6mm x 15.3mm x 1.02mm BATTERY RF DETECTOR OUT Features        2 Component Placement Power Platform  RF6261B Power Amplifier: 6.0mm x 8.0mm


    Original     		RFRD64613G RFRD6461 RF6561 RF6261B RF6561 DS120612 RF6261B) RF6561) RF6261 RFRD6461 WCDMA duplexer RF626 SP4T Antenna Switch RF65 rf coupler rf detector PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE94302 Product Description The PE94302 is a high linearity, 6-bit UltraCMOS RF Digital Step Attenuator DSA . This 50-ohm RF DSA covers a 31.5 dB attenuation range in 0.5 dB steps. It provides both parallel and serial CMOS control interface. The PE94302 maintains high


    Original     		PE94302 PE94302 50-ohm PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE94302 Product Description The PE94302 is a high linearity, 6-bit UltraCMOS RF Digital Step Attenuator DSA . This 50-ohm RF DSA covers a 31.5 dB attenuation range in 0.5 dB steps. It provides both parallel and serial CMOS control interface. The PE94302 maintains high


    Original     		PE94302 PE94302 50-ohm PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE94302 50 RF Digital Step Attenuator For Rad-Hard Space Applications 6-bit, 31.5 dB, DC – 4.0 GHz Product Description The PE94302 is a high linearity, 6-bit UltraCMOS RF Digital Step Attenuator DSA . This 50-ohm RF DSA covers a 31.5 dB


    Original     		PE94302 PE94302 50-ohm PDF

    mobile charger circuit diagram 220v ac to 3.7v dc converter

    Abstract: MAX19693 MAX36025 GEIA-STD-0006 RX-2 -G 27Mhz max8895 MAX19692 maxim max 1987 220v ac to 3.7v dc converter RF based remote CONTROLLED ROBOT
    Text: Mil/Aero Product Guide Learn More Page Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Obsolescence Mitigation Program. . . . . . . . . . . . . . . . 3 Lead-Finish Program. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE94302 Product Description The PE94302 is a high linearity, 6-bit UltraCMOS RF Digital Step Attenuator DSA . This 50-ohm RF DSA covers a 31.5 dB attenuation range in 0.5 dB steps. It provides both parallel and serial CMOS control interface. The PE94302 maintains high


    Original     		PE94302 PE94302 50-ohm PDF

    Untitled

    Abstract: No abstract text available
    Text: High performance aerospace and defense solutions Introduction NXP Semiconductors has been a trusted source and a leading provider of components to the Aerospace and Defense market for over 30 years. NXP’s components are applied in a wide array of Aerospace and Defense systems including Radar, SDR Software Defined Radio , ECM (Electronic Countermeasures) and


    Original     		JESD204A PDF

    HMC676LC3C

    Abstract: No abstract text available
    Text: OFF-THE-SHELF MARCH 2008 New DC to Millimeterwave ICs & Modules from Hittite Hittite Opens New Sales Office in Japan! See Page 7 25 New Products Produc Released! Product P d t Showcase Sh 0.2 - 4 GHz High IP3 Amp HIGH SPEED DIGITAL LOGIC & LATCHED COMPARATORS RELEASED!


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE4312 UltraCMOS RF Digital Step Attenuator 6-bit, 31.5 dB, 1 MHz – 4 GHz Product Description The PE4312 is a 50Ω, HaRP technology-enhanced 6-bit RF Digital Step Attenuator DSA designed for use in 3G/4G wireless infrastructure and other high performance


    Original     		PE4312 PE4312 PE4302 PDF

    HMC588LC4

    Abstract: HMC588LC4B HMC595 IC 7486 HMC174MS8 HMC574MS8 HMC472LP4 HMC539LP3 hmc472 DK004
    Text: OFF-THE-SHELF AUTUMN 2005 NEW RF TO MILLIMETERWAVE IC PRODUCTS FROM HITTITE INSIDE. WIDEBAND VCO TUNES FROM 8.0 TO 12.5 GHZ! * 21 NEW PRODUCTS RELEASED! Product Showcase 1 Watt, DC - 20 GHz PA Low SSB Phase Noise and Compact 4 x 4 mm SMT Footprint The highly anticipated wideband VCO from Hittite


    Original     		HMC588LC4B HMC588LC4 HMC595 IC 7486 HMC174MS8 HMC574MS8 HMC472LP4 HMC539LP3 hmc472 DK004 PDF

    HMC617LP3E

    Abstract: x-band mmic lna HMC613 microwave transceiver HMC700LP4E 4x4 bit multipliers HMC616 LNA x-band lte RF Transceiver transceiver 4G LTE
    Text: OFF-THE-SHELF JUNE 2008 New DC to Millimeterwave ICs & Modules from Hittite Hittite Launches New Website! See Page 6 for More Details 26 New Product Products Released! NEW FRACTIONAL SYNTHESIZER PRODUCT LINE! Fractional Synthesizer Features Ultra Low Phase Noise


    Original     		HMC700LP4E HMC617LP3E x-band mmic lna HMC613 microwave transceiver 4x4 bit multipliers HMC616 LNA x-band lte RF Transceiver transceiver 4G LTE PDF

    circuit diagram wireless spy camera

    Abstract: interfacing 8051 with 300 GSM Modem datasheet PIC Microcontroller GSM Modem cash box guard project with procedure pmb 4220 interfacing 8051 with GSM Modem Siemens pmb 4220 pbc 05 ericsson Marking Code SMD databook gsm coding in c for 8051 microcontroller
    Text: Contents Page Introduction . Quality Assurance . Page 3 Package Information 4 Summary of Types in Alphanumerical Order Mobile Communication ICs . 208 . 209 .


    Original     		D-81671 circuit diagram wireless spy camera interfacing 8051 with 300 GSM Modem datasheet PIC Microcontroller GSM Modem cash box guard project with procedure pmb 4220 interfacing 8051 with GSM Modem Siemens pmb 4220 pbc 05 ericsson Marking Code SMD databook gsm coding in c for 8051 microcontroller PDF

    ic csc 2313 f

    Abstract: pbc 05 ericsson MBF 233-3 ericsson 2308 gsm modem pic interface block diagram Siemens pmb 4220 82c257 QPSK reciever BELL MOUTH clearance calculation csc 2313 f
    Text: Contents Page Introduction . Quality Assurance . Page 2 Package Information 3 Summary of Types in Alphanumerical Order Mobile Communication ICs . 189 . 190 .


    Original     		16-Bit ic csc 2313 f pbc 05 ericsson MBF 233-3 ericsson 2308 gsm modem pic interface block diagram Siemens pmb 4220 82c257 QPSK reciever BELL MOUTH clearance calculation csc 2313 f PDF

    toshiba laptop battery pack pinout

    Abstract: GTX3000P IBM POWER3 processor driclad toshiba laptop schematic diagram MCP Technology Trend P2SC stacked transistors SOI RF IBM Microelectronics ASIC ibm ASIC SRAM
    Text: 4 volume 4 A publication of IBM Microelectronics IBM Helps Juniper Networks Produce Revolutionary Internet Backbone Router Nancy Adinolfe, R. K. Anand, and Alison Seaman In This Issue Introduction Fourth Quarter 1998, Vol. 4, No.4 1 IBM Helps Juniper Networks Produce


    Original     		64-bit S/390TM 256-Mb 60-micron 10-mil toshiba laptop battery pack pinout GTX3000P IBM POWER3 processor driclad toshiba laptop schematic diagram MCP Technology Trend P2SC stacked transistors SOI RF IBM Microelectronics ASIC ibm ASIC SRAM PDF

    SC 2272

    Abstract: HMC481ST89 NE AND micro-X HMC311LP3 HMC311ST89 HMC368LP4 HMC479ST89 HMC484MS8G HMC490 HMC498
    Text: OFF-THE-SHELF SPRING 2004 NEW RF TO MILLIMETERWAVE IC PRODUCTS FROM HITTITE HMC ADDS SiGe & InGaP HBT GAIN BLOCK AMPLIFIERS! INSIDE. * 17 NEW PRODUCTS RELEASED! Product Showcase +27 dBm Driver Amplifier HMC498 • 17 - 24 GHz • +24 dB Gain • +34 dBm Output IP3


    Original     		HMC498 HMC479ST89 HMC481ST89, OC-48 OC-192 SC 2272 HMC481ST89 NE AND micro-X HMC311LP3 HMC311ST89 HMC368LP4 HMC484MS8G HMC490 HMC498 PDF

    the RMII Consortium Specification

    Abstract: 4B5B decoder 84221 RMII Consortium
    Text: 84221 84221 Quad 100BaseTX/FX/10BaseT Physical Layer Device Technology Incorporated PRELIMINARY June 15, 1999 Note: Check for latest Data Sheet revision before starting any designs. Call SEEQ Technology 510 226-2903 —or— SEEQ Data Sheets are now on the Web, access


    Original     		100BaseTX/FX/10BaseT 100BaseTX/100BaseFX/10BaseT Base-TX/FX10 MD400184/­ QQ84220 the RMII Consortium Specification 4B5B decoder 84221 RMII Consortium PDF