Untitled
Abstract: No abstract text available
Text: BSS138 Small Signal MOSFET N-Channel 3 DRAIN * “G” Lead Pb -Free Features: SOT-23 3 1 *Low On-Resistance : 3.5 Ω *Low Input Capacitance: 40PF *Low Out put Capacitance : 12PF *Low Threshole :1 .5V *Fast Switching Speed : 20ns GATE 1 2 2 SOURCE Application:
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BSS138
OT-23
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BSS138/J1
Abstract: BSS138 onr 20
Text: BSS138 Small Signal MOSFET N-Channel 3 DRAIN SOT-23 Features: 3 1 *Low On-Resistance : 3.5 Ω *Low Input Capacitance: 40PF *Low Out put Capacitance : 12PF *Low Threshole :1 .5V *Fast Switching Speed : 20ns GATE 1 2 2 SOURCE Application: * DC to DC Converter
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BSS138
OT-23
BSS138/J1
BSS138
onr 20
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tf 3621
Abstract: 1575R 3621 c 3621
Text: S T S 3621 S amHop Microelectronics C orp. Oct. 24 2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 3A R DS (ON) ( m Ω ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -2A R DS (ON) ( m Ω )
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stm8309
Abstract: EQUIVALENT STM8309 M8309 STM830
Text: STM8309 Green Product SamHop Microelectronics Corp. Oct.13, 2006 Dual Enhancement Mode Field Effect Transistor N and P Channel (N-Channel) PRODUCT SUMMARY VDSS ID 30V 7A RDS(ON) ( m Ω ) (P-Channel) PRODUCT SUMMARY Max VDSS ID -30V -6A RDS(ON) ( m Ω )
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STM8309
stm8309
EQUIVALENT STM8309
M8309
STM830
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U403D
Abstract: No abstract text available
Text: S T U403D S amHop Microelectronics C orp. Apr.14 2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 11A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -9A R DS (ON) ( m W )
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U403D
O-252-4L
O-252-4L
U403D
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STM8309
Abstract: M8309
Text: S T M8309 S amHop Microelectronics C orp. Oct.13, 2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -6A R DS (ON) ( m W )
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M8309
015X45°
STM8309
M8309
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STA6611
Abstract: No abstract text available
Text: STA6611 SamHop Microelectronics Corp. Nov. 22, 2006 Dual Enhancement Mode Field Effect Transistor N and P Channel (N-Channel) PRODUCT SUMMARY VDSS RDS(ON) ( m Ω ) ID Max VDSS ID -30V -6.6A RDS(ON) ( m Ω ) Max 35 @ VGS = -10V 23 @ VGS = 10V 30V (P-Channel)
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STA6611
STA6611
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STU309DH
Abstract: stu309 stu309d U309DH 309d TO-252-4L
Text: S T U309DH S amHop Microelectronics C orp. Apr 20 2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -14A R DS (ON) ( m Ω )
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U309DH
O-252-4L
STU309DH
O-252-4L
STU309DH
stu309
stu309d
U309DH
309d
TO-252-4L
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Untitled
Abstract: No abstract text available
Text: S T U404D S amHop Microelectronics C orp. S ep 14 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A
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U404D
O-252-4L
O-252-4L
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Untitled
Abstract: No abstract text available
Text: S T S 3621 S amHop Microelectronics C orp. Oct. 24 2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 3A R DS (ON) ( m Ω ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -2A R DS (ON) ( m Ω )
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T1 BC557
Abstract: acer battery pinout led acer 1N414 1N4148 ACE1202 BC557 acer schematic diagram
Text: August 2001 ACE1202R Data Encryption Standard DES Receiver General Description Features The ACE1202R is a custom receiver implementing the DES algorithm. The receiver is used to decrypt a pulse-width modulated (PWM) encrypted signal transmitted by a radio frequency
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ACE1202R
ACE1202R
ACE1202T1.
ACE1202T
32-bit
100nA
T1 BC557
acer battery pinout
led acer
1N414
1N4148
ACE1202
BC557
acer schematic diagram
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STM831
Abstract: stm8316 STM-831 STM83
Text: S TM8316 SamHop Microelectronics Corp. Aug 20,2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m Ω P R ODUC T S UMMAR Y (P -C hannel) ) Max V DS S ID -30V -6A R DS (ON) ( m Ω )
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TM8316
STM831
stm8316
STM-831
STM83
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Untitled
Abstract: No abstract text available
Text: S T U404DF S amHop Microelectronics C orp. S ep 25 2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m W )
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U404DF
O-252-4L
O-252-4L
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M9930
Abstract: No abstract text available
Text: S T M9930A S amHop Microelectronics C orp. Dec.20, 2005 2N and 2P Channel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y N-C hannel R DS (ON) ( m W ) V DS S ID 30V 6A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S ID -30V
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M9930A
M9930
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U405D
Abstract: STU405D 2525l
Text: S T U405D S amHop Microelectronics C orp. Nov,24 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 40V 16A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m W )
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U405D
O-252-5L
O-252-5L
U405D
STU405D
2525l
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STU407D
Abstract: U407D TU407D
Text: S T U407D S amHop Microelectronics C orp. J uly 27 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W )
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U407D
O-252-4L
O-252-4L
STU407D
U407D
TU407D
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M9930
Abstract: No abstract text available
Text: S T M9930A Green Product S amHop Microelectronics C orp. Dec.20, 2005 2N and 2P Channel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y P -C hannel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 6A R DS (ON) ( m Ω ) Max V DS S ID -30V
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M9930A
M9930
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stu409dh
Abstract: TO-252-4L stu409d
Text: S T U409DH S amHop Microelectronics C orp. May 29 2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 18A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S
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U409DH
O-252-4L
O-252-4L
stu409dh
TO-252-4L
stu409d
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M8358S
Abstract: No abstract text available
Text: S T M8358S S amHop Microelectronics C orp. Oct.28, 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7.2A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S
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M8358S
M8358S
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stu404d
Abstract: U404D TU404D
Text: S T U404D S amHop Microelectronics C orp. Oct, 03 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m W )
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U404D
O-252-4L
O-252-4L
stu404d
U404D
TU404D
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stu312d
Abstract: pf 312D U312D To-252-4 stu312
Text: S T U312D S amHop Microelectronics C orp. Oct 08 2008 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -14A R DS (ON) ( m Ω )
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U312D
O-252-4L
STU312D
O-252-4L
stu312d
pf 312D
U312D
To-252-4
stu312
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Untitled
Abstract: No abstract text available
Text: ADAM TECH D IN 41612 CONNECTORS ONR SERIES ADAM TECHNOLOGIES INC. INTRODUCTION: Adam Tech DNR Series is an internationally accepted two piece PC board connector system which conforms to DIN 41612, IEC 603-2 and MIL-C-55301 standards. This series is compatible
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MIL-C-55301
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HAT1046R
Abstract: No abstract text available
Text: HAT1046R Silicon P Channel Power MOS FET Power Switching HITACHI 2nd. Edition January 1999 Features • Low on-resistance • R Ds onr 3 0 m ii t o ( at v g s = -4V C apable o f -4 V gate drive • Low drive current • H igh density m ounting Outline SOP-8
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HAT1046R
HAT1046R
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S 5 F 10 N 80 A
Abstract: No abstract text available
Text: E9 OPTOELECTRONICS OPTOCOUPLERS P h o to tr a n s is to r O u tp u t; G a A s In p u t c o n t. CTI P a rt 6] BASE ANODE [Ï B VCeo <10m £ l F<%) b v cbo A g e n c y / Ipprov a ls PI <g *ONr tOFF (V ) (V ) (M S) V IS O N um ber m in m ax m in m in m ax
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MCT2201
MCT2202
MCT26
H11AG1
H11AG2
H11AG3
MCT5200
MCT5201
MCT5210
MCT5211
S 5 F 10 N 80 A
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