NEC MARKING surface
Abstract: C11531E FP1F3P nec S33
Text: DATA SHEET COMPOUND TRANSISTOR FP1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive
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C11531E)
NEC MARKING surface
C11531E
FP1F3P
nec S33
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Text: DATA SHEET COMPOUND TRANSISTOR HQ1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 2A high current drives such as ICs, motors, and solenoids available • On-chip bias resistor
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Text: DATA SHEET COMPOUND TRANSISTOR HQ1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 2A high current drives such as ICs, motors, and solenoids available • On-chip bias resistor
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Text: DATA SHEET COMPOUND TRANSISTOR HQ1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 2A high current drives such as ICs, motors, and solenoids available • On-chip bias resistor
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Text: DATA SHEET COMPOUND TRANSISTOR BN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Text: DATA SHEET COMPOUND TRANSISTOR BN1F4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with BA1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Text: DATA SHEET COMPOUND TRANSISTOR BN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Text: DATA SHEET COMPOUND TRANSISTOR AN1L4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AA1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Text: DATA SHEET COMPOUND TRANSISTOR AN1L4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AA1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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BA1A4Z
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR BA1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Text: DATA SHEET COMPOUND TRANSISTOR AN1F4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with AA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Text: DATA SHEET COMPOUND TRANSISTOR BA1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Text: DATA SHEET COMPOUND TRANSISTOR AN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with AA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Text: DATA SHEET COMPOUND TRANSISTOR AN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with AA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Text: DATA SHEET COMPOUND TRANSISTOR AN1A3Q on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 1.0 kΩ, R2 = 10 kΩ) • Complementary transistor with AA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Text: DATA SHEET COMPOUND TRANSISTOR BN1L3M on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 4.7 kΩ) • Complementary transistor with BA1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Text: DATA SHEET COMPOUND TRANSISTOR AN1A3Q on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 1.0 kΩ, R2 = 10 kΩ) • Complementary transistor with AA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Text: DATA SHEET COMPOUND TRANSISTOR AN1L3M on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 4.7 kΩ) • Complementary transistor with AA1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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MA3560
Abstract: BA1L3N
Text: DATA SHEET COMPOUND TRANSISTOR BN1L3N on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 10 kΩ) • Complementary transistor with BA1L3N ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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transistor marking 7D
Abstract: nec marking "7A"
Text: DATA SHEET COMPOUND TRANSISTOR HR1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 2A high current drives such as IC outputs and actuators available • On-chip bias resistor • Low power consumption during drive
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Text: DATA SHEET COMPOUND TRANSISTOR AN1L3N on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 10 kΩ) • Complementary transistor with AA1L3N ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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d1616
Abstract: No abstract text available
Text: DATA SHEET COMPOUND TRANSISTOR AN1L3N on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 10 kΩ) • Complementary transistor with AA1L3N ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Text: DATA SHEET COMPOUND TRANSISTOR BN1A3Q on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 1.0 kΩ, R2 = 10 kΩ) • Complementary transistor with BA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Text: DATA SHEET COMPOUND TRANSISTOR BN1L3M on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 4.7 kΩ) • Complementary transistor with BA1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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