ON SEMICONDUCTOR MARKING N20E Search Results

ON SEMICONDUCTOR MARKING N20E Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TPHR7404PU		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

ON SEMICONDUCTOR MARKING N20E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
n20eg Abstract: 6n20e N20E V750C on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 Text: MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast	Original	PDF	MTD6N20E MTD6N20E/D n20eg 6n20e N20E V750C on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4
n20eg Abstract: 6N20E 369D AN569 MTD6N20E 6n20eg Text: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching	Original	PDF	MTD6N20E MTD6N20E/D n20eg 6N20E 369D AN569 MTD6N20E 6n20eg
Untitled Abstract: No abstract text available Text: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching	Original	PDF	MTD6N20E MTD6N20E/D
Untitled Abstract: No abstract text available Text: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching	Original	PDF	MTD6N20E MTD6N20E/D
N20E Abstract: on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e Text: MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast	Original	PDF	MTD6N20E MTD6N20E/D N20E on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e
N20E Abstract: t4n20e on semiconductor marking n20e 4n20e 369D AN569 MTD4N20E MTD4N20ET4 MARKING CODE diode sod123 t4 T4 N20E Text: MTD4N20E Preferred Device Power MOSFET 4 Amps, 200 Volts N−Channel DPAK Symbol Value Unit Drain−Source Voltage VDSS 200 Vdc Drain−Gate Voltage RGS = 1.0 MΩ VDGR 200 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) VGS	Original	PDF	MTD4N20E MTD4N20E/D N20E t4n20e on semiconductor marking n20e 4n20e 369D AN569 MTD4N20E MTD4N20ET4 MARKING CODE diode sod123 t4 T4 N20E