OMNIFET II Search Results

OMNIFET

Abstract: 1N4148 DO35 AS8401 BC141 BC141-10 j20 Schematic sgs bc141
Contextual Info: AS8401 Application Note Evaluation Board AS8401 Evaluation Board for the Multipurpose control ASIC AS8401 for OMNIFET Application Note Multipurpose control ASIC for OMNINET – Application Note AS8401 1. Key Features • Shows the general usage of the multipurpose control ASIC AS8401 for OMNIFET SGS

MIKRO PF REGULATOR

Abstract: automatic change over switch circuit diagram 27OC AS8401 OMNIFET
Contextual Info: Austria Mikro Systeme International AG AS8401 Multipurpose control ASIC for OMNIFET Data Sheet Multipurpose control ASIC for OMNINET – Data Sheet AS8401 Austria Mikro Systeme International AG Key Features • • • • • • • • • • Multipurpose control ASIC for OMNIFET SGS Thompson intelligent power FET family

Contextual Info: VND5N07 OMNIFET II fully autoprotected Power MOSFET Features Max. on-state resistance per ch. Current limitation (typ) Drain-Source clamp voltage • Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp RDS (on)

Contextual Info: VNB35NV04-E VNP35NV04-E, VNV35NV04-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data • Direct access to the gate of the Power MOSFET analog driving • Compatible with standard Power MOSFET 10 Description 3 1 1 D2PAK PowerSO-10

OMNIFET

Abstract: JESD97 VNS3NV04D-E VNS3NV04TR-E
Contextual Info: VNS3NV04D-E "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET Features RDS on TYPE VNS3NV04D-E 120 mΩ (*) Ilim Vclamp 3.5 A (*) 40 V (*) (*) Per each device • LINEAR CURRENT LIMITATION ■ THERMAL SHUT DOWN ■ SHORT CIRCUIT PROTECTION ■ INTEGRATED CLAMP

Contextual Info: VNL5300S5-E OMNIFET III fully protected low-side driver Datasheet - production data Description The VNL5300S5-E is a monolithic device made using STMicroelectronics VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery.

Contextual Info: VNL5300S5-E OMNIFET III fully protected low-side driver Datasheet - production data Description The VNL5300S5-E is a monolithic device made using STMicroelectronics VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery.

VNL5050N3TR-E

Abstract: VNL5050N3-E
Contextual Info: VNL5050N3-E VNL5050S5-E OMNIFET III fully protected low-side driver Datasheet - production data Description 2 1 2 The VNL5050N3-E and VNL5050S5-E are monolithic devices made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads

Contextual Info: VNL5090N3-E VNL5090S5-E OMNIFET III fully protected low-side driver Datasheet - production data Description 2 1 2 The VNL5090N3-E and VNL5090S5-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for driving resistive or inductive loads

VND14NV04-1-E

Abstract: VND14NV04 VND14NV0413TR VND14NV04-E OMNIFET VND14NV04 pulse load calculation formula for single pulse VND14NV04-1 VNB14NV04 VNB14NV0413TR VNB14NV04-E
Contextual Info: VNB14NV04, VND14NV04 VND14NV04-1 "OMNIFET II" fully autoprotected Power MOSFET Features TYPE RDS on Ilim Vclamp VNB14NV04 VND14NV04 VND14NV04-1 35 mΩ 12 A 40 V • Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp

Contextual Info: VNL5030J-E VNL5030S5-E OMNIFET III fully protected low-side driver Datasheet - production data Description PowerSSO-12 The VNL5030J-E and VNL5030S5-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for driving resistive or inductive loads

Contextual Info: VNP8T Omnifet II fully autoprotected Power MOSFET Datasheet - production data Description The VNP8T is a monolithic device designed in STMicroelectronics VIPower® M0-3 technology, intended for the replacement of standard Power MOSFETs from DC up to 50 kHz applications.

Contextual Info: VNP8T Omnifet II fully autoprotected Power MOSFET Datasheet - production data Description The VNP8T is a monolithic device designed in STMicroelectronics VIPower® M0-3 technology, intended for the replacement of standard Power MOSFETs from DC up to 50 kHz applications.

Contextual Info: VNL5300S5-E OMNIFET III fully protected low-side driver Datasheet - production data Description The VNL5300S5-E is a monolithic device made using STMicroelectronics VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery.

Contextual Info: VNP35N07-E, VNB35N07-E OMNIFET fully autoprotected Power MOSFET Datasheet - production data Description 3 3 1 The VNP35N07-E and VNB35N07-E are monolithic devices made using STMicroelectronics VIPower technology, intended for replacement of standard Power

ISD 3900

Contextual Info: VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET Features Max On-State resistance per ch. RON 120mΩ Current limitation (typ) ILIMH 3.5A VCLAMP 40V Drain-Source clamp voltage SO-8 • Linear current limitation ■ Thermal shut down ■ Short circuit protection

JESD97

Abstract: VNS3NV04D-E VNS3NV04DTR-E
Contextual Info: VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET Features Max On-State resistance per ch. RON 120mΩ Current limitation (typ) ILIMH 3.5A VCLAMP 40V Drain-Source clamp voltage SO-8 • Linear current limitation ■ Thermal shut down ■ Short circuit protection

VNS1NV04DP-E

Abstract: 2010 so-8 VNS1NV04DP vns1nv04dptr-e
Contextual Info: VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance 1 Current limitation (typ) RDS(ON) 250mΩ (1) Drain-Source clamp voltage (1) ILIMH 1.7A VCLAMP 40V 1. Per each device. SO-8 • Linear current limitation ■ Thermal shutdown

VNS1NV04DP

Abstract: VNS1NV04D vns1nv04dpe
Contextual Info: VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance 1 Current limitation (typ) RDS(ON) 250mΩ (1) Drain-Source clamp voltage (1) ILIMH 1.7A VCLAMP 40V 1. Per each device. SO-8 • Linear current limitation ■ Thermal shutdown

Contextual Info: VNLD5300-E OMNIFET III fully protected low-side driver Datasheet - production data Description The VNLD5300-E is a monolithic device made using STMicroelectronics VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in

Contextual Info: VNLD5300-E OMNIFET III fully protected low-side driver Datasheet - preliminary data Description The VNLD5300-E is a monolithic device made using STMicroelectronics VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in

Contextual Info: VNLD5300-E OMNIFET III fully protected low-side driver Datasheet - preliminary data Description The VNLD5300-E is a monolithic device made using STMicroelectronics VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in

Contextual Info: VND5N07-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data Description 3 DPAK TO-252 The VND5N07-E is a monolithic device designed using STMicroelectronics VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz

Contextual Info: VNLD5300-E OMNIFET III fully protected low-side driver Datasheet - production data Description The VNLD5300-E is a monolithic device made using STMicroelectronics VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in