Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    OHE 1000 Search Results

    OHE 1000 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SF-NLMAMB0001-0001 Amphenol Cables on Demand Amphenol SF-NLMAMB0001-0001 OSFP 400G Loopback Adapter Module for OSFP Port Testing - 0dB Attenuation & 0W Power Consumption [400-Gigabit Ethernet Ready] Datasheet
    SF-NLNAMB0001-0001 Amphenol Cables on Demand Amphenol SF-NLNAMB0001-0001 QSFP-DD 400G Loopback Adapter Module for QSFP-DD Port Testing - 0dB Attenuation & 0W Power Consumption [400-Gigabit Ethernet Ready] Datasheet
    10005639-11109LF Amphenol Communications Solutions Vertical Through-Hole 240 Position DDR2 DIMM Connector, 1.00mm pitch Visit Amphenol Communications Solutions
    10008026-201 Amphenol Communications Solutions GIG-Array®, Mezzanine Connectors, 13mm Plug 296 Position. Visit Amphenol Communications Solutions
    10005639-12328HLF Amphenol Communications Solutions DDR2 DIMM, Storage and Server Connector, Vertical, Through Hole, 240 Position, 1.00mm (0.039in) Pitch Visit Amphenol Communications Solutions
    SF Impression Pixel

    OHE 1000 Price and Stock

    Aleph America Corporation OH-1021

    Opto Sensors 3-Pin
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com OH-1021 13
    • 1 $74.99
    • 10 $74.99
    • 100 $20.61
    • 1000 $16.98
    • 10000 $16.98
    		Buy Now

    Aleph America Corporation OH-102101A-701

    Opto Sensors 3-Pin
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com OH-102101A-701 13
    • 1 $74.99
    • 10 $74.99
    • 100 $20.61
    • 1000 $16.98
    • 10000 $16.98
    		Buy Now

    Dialight OHE-S1BK

    LUXEON I, III, V and STAR I - DIRECT PCB MOUNT (BLACK)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com OHE-S1BK 7
    • 1 $0.4169
    • 10 $0.4169
    • 100 $0.379
    • 1000 $0.3071
    • 10000 $0.2718
    		Buy Now

    BOYD Laconia KU-ALC5-OH-KS-19X19MM-L

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com KU-ALC5-OH-KS-19X19MM-L
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.56
    • 10000 $1.21
    		Buy Now

    OHE 1000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    emulate

    Abstract: Emulation EEPROM AN931 M39432
    Text: AN931 APPLICATION NOTE On-Chip Hardware EEPROM Emulation Versus Flash Memory Software Solutions FLASH+ technology, from STMicroelectronics, was developed to allow the advantages of EEPROM and those of Flash memory to be obtained from a single device, fabricated on a single chip. Based on Flash


    Original     		PDF AN931 M39432. emulate Emulation EEPROM AN931 M39432

    001BH

    Abstract: AN931 M39432
    Text: AN931 APPLICATION NOTE ON-CHIP HARDWARE EEPROM EMULATION versus FLASH MEMORY SOFTWARE SOLUTIONS by Y. BAHOUT INTRODUCTION The new FLASH+ products from SGS-THOMSON offer single chip solutions which combine Flash and EEPROM memory functionality. Based on Flash memory technology, the devices integrate all the control


    Original     		PDF AN931 M39432 TSOP40 001BH AN931

    4 bit gray code synchronous counter

    Abstract: XC3000 XC3020 X3088
    Text: Implementing State Machines in LCA Devices  XAPP 027.001 Application Note BY PETER ALFKE AND BERNIE NEW Summary This Application Note discusses various approaches that are available for implementing state machines in LCA devices. In particular, the one-hot-encoding scheme for medium-sized state machines is discussed.


    Original     		PDF XC3000/XC3100/XC3100A 4 bit gray code synchronous counter XC3000 XC3020 X3088

    BUZ50B

    Abstract: T0220AB 2SC252
    Text: N AMER PHILIPS/DISCRETE OhE D PowerMOS transistor m ” hhS3T31 001MSb3 L BUZ50B W May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF hhS3T31 001MSb3 BUZ50B bb53131 T-39-11. BUZ50B T0220AB 2SC252

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 310 SFH 310 FA Wesentliche Merkmale Features • Speziell geeignet für Anw endungen im B ereich von 400 nm bis 1100 nm S F H 310 und bei 880 nm (SFH 310 FA) • H ohe Linearität


    OCR Scan     		PDF SFH310FA

    rca 7649

    Abstract: RCA -7649 92CM-92 rca company microwave tubes rca tube 80 F 7649 7649
    Text: 7649 Beam Power Tube CERAMIC-METAL SEALS COAXIAL-ELECTRODE STRUCTURE INTEGRAL RADIATOR "OHE-PIECE" ELECTRODE DESI6N FORCED-AIR COOLED 9000-WATTS PEAK-PULSE INPUT UP TO 1215 Me MATRIX-TYPE, OXIDE-COATED, UNIPOTENTIAL CATHODE For Use at Frequencies up to 2000 He


    OCR Scan     		PDF 9000-WATTS rca 7649 RCA -7649 92CM-92 rca company microwave tubes rca tube 80 F 7649 7649

    E587

    Abstract: No abstract text available
    Text: OPTEK TECHNOLOGY INC OhE D | b7TflS00 0000530 a I Optoelectronics Division T R W Electronic Components Group 1987 Cost Saver Product! Call TRW for more information! Product Bulletin 52 0 6 January 1985 i v j n a a m M M t W W T - H I-S 3 Optically Coupled Isolators


    OCR Scan     		PDF b7TflS00 0PI2153, 0PI2253 E587

    TELEDYNE PHILBRICK

    Abstract: TELEDYNE PHILBRICK 1435 PHILBRICK optical electronics 9918 philbrick power supply TELEDYNE PHILBRICK f to v TELEDYNE PHILBRICK V to F DDD1711 "optical electronics"
    Text: OPTICAL ELECTRONICS INC OhE D g ^7^381, 00□ 17i□ □ | 9918 DATA AND SPECIFICATIONS DESCRIPTION AND INSTRUCTIONS T '7 ? '0 7 -/O Optical Electronics Incorporated W IDE BANDWIDTH HIGH GAIN OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • G AIN B A N D W ID TH PRODUCT:


    OCR Scan     		PDF f-19-07 00V/Msec 15juV/Â TELEDYNE PHILBRICK TELEDYNE PHILBRICK 1435 PHILBRICK optical electronics 9918 philbrick power supply TELEDYNE PHILBRICK f to v TELEDYNE PHILBRICK V to F DDD1711 "optical electronics"

    TELEDYNE PHILBRICK 1435

    Abstract: TELEDYNE PHILBRICK 9918are 9918 DDD1711 sonar rf front end "optical electronics" optical electronics TELEDYNE PHILBRICK f to v 9918A
    Text: OPTICAL ELECTRONICS INC OhE D g ^7^381, 00□ 17i□ □ | 9918 DATA AND SPECIFICATIONS DESCRIPTION AND INSTRUCTIONS T '7 ? '0 7 -/O Optical Electronics Incorporated W IDE BANDWIDTH HIGH GAIN OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • G AIN B A N D W ID TH PRODUCT:


    OCR Scan     		PDF f-19-07 00V/Msec 15juV/Â TELEDYNE PHILBRICK 1435 TELEDYNE PHILBRICK 9918are 9918 DDD1711 sonar rf front end "optical electronics" optical electronics TELEDYNE PHILBRICK f to v 9918A

    0PI2152

    Abstract: OP12152 VDC111
    Text: OPTEK- TECHNOLOGY INC OhE D | bTIflSÛD D0G025Ô 0 | Optoelectronics D ivision T R W Electronic Com ponents Group 1 9 8 7 C ost S a v e r P ro d u c t! C all T R W fo r m ore in fo rm a tio n ! Product Bulletin 5204 January 1985 T R w T~ 41-23 Y _ Optically Coupled Isolators


    OCR Scan     		PDF b71flSflD M1-23 0PI2152, 0PI2252 E58730 0PI2152 0PI2252 0PI2162 0I00E OP12152 VDC111

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ^53=131 O D l M i n b OhE D l LB E /LC E 2003S LB E /LC E 2009S T - 3 3 -O S ' MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold metallization


    OCR Scan     		PDF 2003S 2009S LBE2003S LBE2009S LCE2003S LCE2009S

    OPI2152

    Abstract: No abstract text available
    Text: OPTEK-JECHNOLOGY INC OhE D | t^ESflO OOGOSSâ □ | O p to e le c tr o n ic s D iv is io n TRW Electronic Components Group Product Bulletin 5204 January 1985 19 8 7 Cost S a v e r Pro du ct! Call T R W fo r m ore in fo rm a tio n ! T~ - H 7 # ? iV I-2 3 ' _


    OCR Scan     		PDF VCC-11V OPI2152

    CXC320

    Abstract: TB 5843 CXC20C cxc400 CXC300 CXC81 CXC18C CXC935 CXC11 100A249
    Text: R ectifier D iodes ~ Capsule types Type ^RRM Range ^F AV Ths55°C ^F(RMS) @ 25°C If @ 25°C I fSM(2) 10m s V R=s60% V R^ 1 0 V ^RRM (Note 2) (Note 2) I2t (2) 10m s I rrm (V) (A) (A) (A) (A) (A) (Note 2) (A2S) SWxCXC300 200-1500 650 1170 1000 5500 6050 183 x 103


    OCR Scan     		PDF Ths55 SWxCXC300 SWxCXC320 SWxCXC380 SWxCXC400 SWxCXC470 SWxCXC445 SWxCXC565 SWxCXC350 SWxCXC515 CXC320 TB 5843 CXC20C cxc400 CXC300 CXC81 CXC18C CXC935 CXC11 100A249

    delta rj45

    Abstract: RJGE
    Text: iSkltELM SPECIFICATION FOR APPROVAL Rev.: A C u sto m e r P a r t No.: Delta P a r t No.: RJGE-12A 6110D-R P a r t Nam e: RJ45 IdM 1000 B a g e - T 12 Port (g o H |) CofipUANT 1. M e c h a n i c a l D i m e n s i o n : A l.B0[0.071]M AX Y e llow /G reen


    OCR Scan     		PDF E-12A6110D-R E-12A6110D-R 1-100MHZ 100-125MHZ -40MHZ 40-60MHZ -12dB 60-80MHZ 80-100MHZ -30dB delta rj45 RJGE

    RJGE-12AB6410BR

    Abstract: RJGE1 RJGE RJGE-12 12 pin RJ45 LED
    Text: A . ftELM SPECIFICATION FOR APPROVAL Rev.: B Customer Part No.: Delta Part No.: RJÖE-12AB6410BR Part Name: RJ45 IÖM 1000 B ase-T 12 Port $oH£ CoflpÚANT 1. M e c h a n i c a l D i m e n s i o n : 1.80[0.071]MAX I $ 1.10 [O.iaijREF 10.89 [0.429] 1.20 [0.047]REF


    OCR Scan     		PDF RJGE-12AB6410BR 161JKEF -12dB l-100MHz 100-125MHz l-40MHz 40-60MHz 60-80MHz 80-100MHz RJGE-12AB6410BR RJGE1 RJGE RJGE-12 12 pin RJ45 LED

    STDA05HE

    Abstract: STDA10 STDA10FR STDA10HE STDA15HE
    Text: R S M ELECTRON/SENSITRCN ’T'-Jo l3 -O rlr 15E 0 | 7S03b5Q Q0DQ7Mfi 1 | LOW PROFILE 17 AMP CENTER TAP AND DOUBLER ASSEMBLIES G EN ERA L PURPOSE, FAST RECO VERY, SUPER FAST RECO VERY M AXIM U M RATINGS PIV PER LEG TYPE NUMBER AVERAGE OUTPUT C U R R E N T Tc = CASE


    OCR Scan     		PDF 7S03b5G 511-MAX STDA05HE STDA10 STDA10FR STDA10HE STDA15HE

    p848

    Abstract: No abstract text available
    Text: SIEMENS Mini-NPN-Silizium-Fototransistor Mini-Silicon NPN Phototransistor SFH 305 1 .1 5 . 0 .9 0 o m fO CN 0 .5 , 0 .4 C o lle c to r SFH 305 C a th o d e (SFH 405) 1) D e ta chin g a re a fo r to ols, fla s h not tru e to size . Ap p ro x. w eight 0.0 2 g


    OCR Scan     		PDF

    augat

    Abstract: MIL-T-10727 intcon MIL-G-45024
    Text: AUGAT/ INTCON PRDT GP 57E D • 10^5335 0 0 02 6 1 4 30b H A U I P Female 4 Row Box Pac Features ■ High density ■ 40 to 264 Single Cluster 80 to 320 Double Cluster ■ UL Recognized % Materials ■ Insulator: Polyphenylene Sulfide UL94V0 ■ Contact: Copper alloy per Federal Specifica­


    OCR Scan     		PDF 10-66/Row 10-40/Row augat MIL-T-10727 intcon MIL-G-45024

    N283CH

    Abstract: N1200CH N490CH S0609 N105PH12 N600CH TI 45-600 BLA06 n880ch
    Text: Phase Control Thyristors ~ Capsule types Type V DRM V R R M I t AV ^T(R M S) Range T,55°C @ 25°C IT @25°C -^TSM(l) ^ TSM (2) 10ms 10ms I2t(2) di/dt Non- V r^60% VR^10V Re p/Rep 25°C ^RRM (Note 5) (Note 4) (A) (Note 1) (A2s) 1000/500 (Note 1) (Note 1)


    OCR Scan     		PDF Ths55Â Vrss60% N086CHX N105CHX N170CHX N195CHX N275CHX N282CHX N281CHX 150/3ents. N283CH N1200CH N490CH S0609 N105PH12 N600CH TI 45-600 BLA06 n880ch

    Untitled

    Abstract: No abstract text available
    Text: am HIGH RELIABILITY SURFACE MOUNT RESISTOR MCHP M e ta l G la z e 1Mth ic k film e le m e n t fire d a t 1 0 0 0 C to s o lid c e r a m ic s u b s tra te SERIES H ig h te m p e r a tu r e d ie le c tric c o a tin g • Reliable Metal G laze technology • Superb solderability - reflow & wave


    OCR Scan     		PDF MIL-R-39017 100ohms= 1000ohms 000ohms 100ohms 51ohms 25ohms

    BUZ50C

    Abstract: T0220AB
    Text: PowerMQS transistor N AUER PHILIPS/DISCRETE BUZ50C OLE D • [^53^31 0014570 1 ■ " T -3 1 -1 1 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BIIZ50C T0220AB; BUZ50C BUZ50C T0220AB

    RX1011B350Y

    Abstract: broad-band Microwave Class-C Transistor Amplifiers
    Text: N AMER P H I L I P S / D I S C R E T E bbSB^l ObE D 0 0 1 5 1 7 ^ fi D EVELOPM EN T DATA RX1011B350Y T h is data sheet contains advance inform ation and specifications are subject to change w ith out notice. r-f 33-/S" PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C


    OCR Scan     		PDF RX1011B350Y T-33- 7Z23071 RX1011B350Y broad-band Microwave Class-C Transistor Amplifiers

    BUZ60

    Abstract: KB53 T0220AB
    Text: PowerMOS transistor_ BUZ60 N AMER PHILIPS/DISCRETE ObE D • bbSBTBl 0014475 1_ ■ May 198T GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ60 0Q1M475 T0220AB; T-39-11 BUZ60 KB53 T0220AB

    Untitled

    Abstract: No abstract text available
    Text: Sonet Clock Recovery Module SCRM-622 The Vectron SCRM-622 is a PLL based single package solution for clock and data recovery CDR at SONET OC-12/CCITT STM-4 rates. Unlike other high performance CDR modules, which require external components and crystal oscillators, the SCRM-622 is self-contained. No external


    OCR Scan     		PDF SCRM-622 SCRM-622 OC-12/CCITT TR-NWT-000253