transistor C3866
Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)
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OC 74 germanium transistor
Abstract: P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD XP1020-BD-000V power transistor gaas
Text: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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P1020-BD
30-Jan-07
MIL-STD-883
XP1020-BD
XP1020-BD-000V
XP1020-BD-EV1
XP1020-BD
OC 74 germanium transistor
P1020
15MPA0566
DM6030HK
TS3332LD
XP1020-BD-000V
power transistor gaas
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power transistor gaas
Abstract: No abstract text available
Text: 11.0-16.0 GHz GaAs MMIC Power Amplifier P1008-BD May 2007 - Rev 02-May-07 Features Excellent Linear Output Amplifier Stage 31.0 dB Small Signal Gain +30.0 dBm P1dB Compression Point +38.5 dBm Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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02-May-07
P1008-BD
MIL-STD-883
XP1008-BD-000V
XP1008-BD-000W
XP1008-BD-EV1
XP1008
power transistor gaas
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Untitled
Abstract: No abstract text available
Text: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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Original
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PDF
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P1020-BD
30-Jan-07
MIL-STD-883
XP1020-BD
XP1020-BD-000V
XP1020-BD-EV1
XP1020-BD
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OC 74 germanium transistor
Abstract: 27s21 OC 76 germanium transistor
Text: 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier L1005-BD April 2007 - Rev 19-Apr-07 Features Wideband Low Noise Amplifier 13.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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19-Apr-07
L1005-BD
MIL-STD-883
XL1005-BD-000V
XL1005-BD-000W
XL1005-BD-EV1
XL1005
OC 74 germanium transistor
27s21
OC 76 germanium transistor
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p1008 transistor
Abstract: 84-1LMI 3392 1280 24 6
Text: 11.0-16.0 GHz GaAs MMIC Power Amplifier P1008 May 2006 - Rev 10-May-06 Features Excellent Linear Output Amplifier Stage 31.0 dB Small Signal Gain +30.0 dBm P1dB Compression Point +38.5 dBm Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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P1008
10-May-06
MIL-STD-883
p1008 transistor
84-1LMI
3392 1280 24 6
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pHEMT transistor MTBF
Abstract: L1005 84-1LMI
Text: 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier L1005 May 2006 - Rev 10-May-06 Features Wideband Low Noise Amplifier 13.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout
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L1005
10-May-06
MIL-STD-883
pHEMT transistor MTBF
L1005
84-1LMI
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DM6030HK
Abstract: TS3332LD XL1005 XL1005-BD-000V XL1005-BD-000W XL1005-BD-EV1
Text: 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier L1005-BD April 2007 - Rev 19-Apr-07 Features Wideband Low Noise Amplifier 13.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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Original
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L1005-BD
19-Apr-07
MIL-STD-883
XL1005-BD-000V
XL1005-BD-000W
XL1005-BD-EV1
XL1005
DM6030HK
TS3332LD
XL1005-BD-000V
XL1005-BD-000W
XL1005-BD-EV1
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OC 74 germanium transistor
Abstract: No abstract text available
Text: 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier L1005 September 2005 - Rev 01-Sep-05 Features Chip Device Layout Wideband Low Noise Amplifier 13.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883
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Original
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01-Sep-05
L1005
MIL-STD-883
OC 74 germanium transistor
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NKT275
Abstract: OC75 OC81DN OC72 OC78 NKT213 germanium transistors PNP oc75 oc76 ACY35 nkt 275
Text: PNP Germanium Transistors PNP Germanium A F Alloy Transistors in T 0 1 metal case Common Characteristics fr Vc£ Cob <VC B = 6 V , \E = 0 •6 V , lc = 1mA) 1 MHz Characteristics at T amb = 2 5 °C Maximum ratings Type Low Noise Types 40 pF B V C fO V B V CSO
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MP21E
Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
Text: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR
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OC 74 germanium transistor
Abstract: OC 140 germanium transistor pnp germanium transistor UJ33 2N396A Germanium Transistor kc 2026 TRANSISTOR SUBSTITUTION MIL-S-1950P
Text: MLL-S-i95ÛÛ/64D 29 June 196? SU PER SED E MIL-S-19500/64C «I nuvemrer I_ ivo i iu See 6.2 M ILITARY SPECIFICATION SEMICONDUCTOR D EVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER T Y PE 2N39GA This specification is mandatory for use by all Depart* ments and Agencies of the Department of Defense.
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MEL-S-19500/64D
MIL-S-19500/64C
2N39GA
-i-100
MIL-S-19500
MIL-S-19500/64C.
OC 74 germanium transistor
OC 140 germanium transistor
pnp germanium transistor
UJ33
2N396A
Germanium Transistor
kc 2026
TRANSISTOR SUBSTITUTION
MIL-S-1950P
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2N5508
Abstract: 2N1019 l53b 5 2N4241 BC138 2SJ11 Transistors 2n551 2N3523 2N550 2N551
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
12X084B
12X165
VCEO-15V
hFE-30
ICBO-200mA
PA-300mW;
VCEO-55V;
hFE-100
Pt-25W;
2N5508
2N1019
l53b 5
2N4241
BC138
2SJ11
Transistors 2n551
2N3523
2N550
2N551
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2N4241
Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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NPN110.
12X084B
12X165
VCEO-15V
hFE-30
ICBO-200mA
PA-300mW;
VCEO-55V;
hFE-100
Pt-25W;
2N4241
OC74
CM601
2N4042
BSV39
2N3523
bc143
BC222 TRANSISTOR
ft06
200S
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SA2713
Abstract: MA7809 MEM808 transistor k1502 RN1030A UC320 RN3020 L17D ML111B ML132A
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
/AT-10uV/deg
SA2720*
SA2721
SA2722*
SA2723*
SA2724*
/AT-10uV/dea
SA2713
MA7809
MEM808
transistor k1502
RN1030A
UC320
RN3020
L17D
ML111B
ML132A
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army sc-c-179495
Abstract: 2N426 2N428 germanium transistor ac 127 STT 433
Text: MIL-S-19500/44D •lEJter sh 1970 SUPERSEDING MIL-S-19500/44C 9 April 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N428 This specification is mandatory fo r use by all De partments and Agencies o f the Department o f Defense.
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MIL-S-19500/44D
MIL-S-19500/44C
2N428
000-hour
MIL-S-19500,
MIL-S-19500
army sc-c-179495
2N426
2N428
germanium transistor ac 127
STT 433
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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2N398A
Abstract: 4510 op Low-Power Germanium PNP transistor 1005 2G
Text: M IL-S-19500/174B 29 November 1971 SUPERSEDING mtt. -s-195QQ/174A 25 August 1065 » m rP A nv cB P P m n im m M SEMICONDUCTOR DEVICE, TRANSX5TGR, FNP, GERMANIUM, LOW-POWER TYPE 2N398A This specification is mandatory for us« by all D epart ments and Agencies oi the Department of Defense.
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-19500/174B
MIL-S-19500/174A
2N398A
C-262m
2N398A
4510 op
Low-Power Germanium PNP
transistor 1005 2G
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2N1305
Abstract: J1 TRANSISTOR 2N1304 Application of 2n1304 2N1307 2N1303 2N1309 2N1308 2n1308 jan transistor 2N1309
Text: M IL -S -1 9500/126C 24 March 1971 SUPERSEDING M IL -S-195 0 0 /1 26B 20 March 1904 * MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, GERMANIUM, HIGH-FREQUENCY NPN TYPES 2N1302, 2N1304, 2N1306, 2N1308 AND PNP TYPES 2N1303, 2N1305, 2N1307, 2N1309 This sp ecification is mandatory for u se by a ll D epart
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MIL-S-19500/126C
MIL-S-19500/126B
2N1302,
2N1304,
2N1306,
2N1308
2N1303,
2N1305,
2N1307,
2N1309
2N1305
J1 TRANSISTOR
2N1304
Application of 2n1304
2N1307
2N1303
2N1309
2n1308 jan
transistor 2N1309
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2N404
Abstract: 2N404 transistor OC 74 germanium transistor germanium transistor 2n404a 2N404A J971 2N404 JAN
Text: MIL -S-19500/20C 22 March .1971 _ SUPERSEDING MIL -S -195 0 0 /2 OB 23 October 1964 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, LOW-POWER TYPES 2N404 AND 2N404A T his sp ecification is mandatory for usg by all D ep artm ents and A gen cies of the Departm ent of D efen se .
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-S-19500/20C
2N404
2N404A
2N404A
2N404.
-19500/20C
MIL-S-19500,
MIL-S-19500
2N404 transistor
OC 74 germanium transistor
germanium transistor 2n404a
J971
2N404 JAN
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
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OC 74 germanium transistor
Abstract: 2N1500 pnp germanium transistor NEW JERSEY SEMICONDUCTOR uz
Text: oKr» 1 TT _c_i QKnn/1 W/ 16t/U 1 .Tuna 1967 SUPERSEDING MIL -S-19500/125B 3 Mav 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, SWITCHING TYPE 2N1500 This specification is m andatory for use by all D epart m ents and Agencies of the Department of Defense.
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MIL-S-19500/125C
-S-19500/125B
2N1500
OC 74 germanium transistor
2N1500
pnp germanium transistor
NEW JERSEY SEMICONDUCTOR uz
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BC138 TRANSISTOR
Abstract: 2N4043 ME2001 2N1020 2N3523 2N4042 2N4241 BC138 bc143 TLO 61
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BC138
Abstract: 2N3520 ST8014 2CY38 BD117 OC74 2N3523 2N4241 BC138 TRANSISTOR BC222 TRANSISTOR
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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12X084B
12X165
VCEO-15V
hFE-30
ICBO-200mA
PA-300mW;
VCEO-55V;
hFE-100
Pt-25W;
VCB0-50V;
BC138
2N3520
ST8014
2CY38
BD117
OC74
2N3523
2N4241
BC138 TRANSISTOR
BC222 TRANSISTOR
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