TO3 RthJA
Abstract: IRHM53064 IRHM54064 IRHM57064 IRHM58064
Text: PD - 93792C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57064 60V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHM57064 100K Rads (Si) IRHM53064 300K Rads (Si) RDS(on) 0.012Ω 0.012Ω ID 35A* 35A* IRHM54064 600K Rads (Si)
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93792C
O-254AA)
IRHM57064
IRHM53064
IRHM54064
IRHM58064
1000K
O-254AA.
MIL-PRF-19500
TO3 RthJA
IRHM53064
IRHM54064
IRHM57064
IRHM58064
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spice models
Abstract: IRFM340 JANTX2N7221 JANTXV2N7221
Text: PD - 90490D POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM340 JANTX2N7221 JANTXV2N7221 REF:MIL-PRF-19500/596 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM340 0.55 Ω 10A HEXFET® MOSFET technology is the key to International
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90490D
O-254AA)
IRFM340
JANTX2N7221
JANTXV2N7221
MIL-PRF-19500/596
O-254AA.
MIL-PRF-19500
spice models
IRFM340
JANTX2N7221
JANTXV2N7221
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MIL-PRF-19500 schottky rectifier
Abstract: 35CGQ045
Text: PD -94298A 35CGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features The 35CGQ045 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hirel environments. It is packaged in the hermetic isolated
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-94298A
35CGQ045
35CGQ045
O-254AA
MIL-PRF-19500
MIL-PRF-19500 schottky rectifier
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JANSR2N7422
Abstract: IRHM9150 IRHM93150 JANSF2N7422
Text: PD - 90889C IRHM9150 JANSR2N7422 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9150 100K Rads (Si) 0.080Ω ID -22A QPL Part Number
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90889C
IRHM9150
JANSR2N7422
O-254AA)
MIL-PRF-19500/662
IRHM93150
JANSF2N7422
O-254AA
JANSR2N7422
IRHM9150
IRHM93150
JANSF2N7422
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IRFMA450
Abstract: No abstract text available
Text: PD - 94362 IRFMA450 POWER MOSFET THRU-HOLE Tabless TO-254AA 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMA450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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IRFMA450
O-254AA)
O-254AA.
MIL-PRF-19500
IRFMA450
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200X200
Abstract: 35SGQ045 c 1384
Text: PD -93963A 35SGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 35SGQ045 Units IF AV 35 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 300 A VF @ 35Apk, TJ =125°C 0.79 V TJ,Tstg Operating and storage -55 to 150
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-93963A
35SGQ045
35SGQ045
35Apk,
O-254AA
MIL-PRF-19500
200X200
c 1384
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bipolar transistor td tr ts tf
Abstract: IRF 260 N IRGMC30F
Text: PD -90714B IRGMC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses
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-90714B
IRGMC30F
O-254AA.
MIL-PRF-19500
bipolar transistor td tr ts tf
IRF 260 N
IRGMC30F
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IRF5M3710
Abstract: isd 1740 4.5v to 100v input regulator
Text: PD - 94234 HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M3710 100V, N-CHANNEL Product Summary Part Number BVDSS IRF5M3710 100V RDS(on) 0.03Ω ID 35A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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O-254AA)
IRF5M3710
O-254AA.
MIL-PRF-19500
IRF5M3710
isd 1740
4.5v to 100v input regulator
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12CGQ150
Abstract: No abstract text available
Text: PD -20359D 12CGQ150 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35A, 150V Description/Features The 12CGQ150 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic isolated
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-20359D
12CGQ150
12CGQ150
O-254AA
MIL-PRF-19500
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7170 MOSFET
Abstract: IRHMS593260 IRHMS597260
Text: PD - 94605 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHMS597260 100K Rads (Si) IRHMS593260 300K Rads (Si) RDS(on) 0.103Ω 0.103Ω ID -32A -32A
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O-254AA)
IRHMS597260
IRHMS597260
IRHMS593260
O-254AA
O-254AA.
MIL-PRF-19500
7170 MOSFET
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mosfet motor dc 48v
Abstract: IRHM53064 IRHM54064 IRHM57064 IRHM58064
Text: PD - 93792A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57064 60V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHM57064 100K Rads (Si) IRHM53064 300K Rads (Si) RDS(on) 0.012Ω 0.012Ω ID 35A* 35A* IRHM54064 600K Rads (Si)
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3792A
O-254AA)
IRHM57064
IRHM53064
IRHM54064
IRHM58064
1000K
co252-7105
mosfet motor dc 48v
IRHM53064
IRHM54064
IRHM57064
IRHM58064
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T0-254AA
Abstract: No abstract text available
Text: Case Outline and Dimensions - T0-254AA Standard & Low Ohmic 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 1.27 [.050] 1.02 [.040] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 3 17.40 [.685] 16.89 [.665]
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T0-254AA
5M-1994.
O-254AA.
T0-254AA
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IRG4MC40U
Abstract: No abstract text available
Text: PD -94305 IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • • • • Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast Speed Operation 3kHz - 40kHz, > 200kHz in Resonent Mode • High Operating Frequency
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IRG4MC40U
40kHz,
200kHz
MIL-PRF-19500
IRG4MC40U
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TRANSISTOR 545
Abstract: IRG4MC50U
Text: PD -94273 IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency
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IRG4MC50U
O-254AA
MIL-PRF-19500
TRANSISTOR 545
IRG4MC50U
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HFB35HB20
Abstract: No abstract text available
Text: PD - 94100 HFB35HB20 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic IF AV = 35A trr = 35ns Description TM HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An
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HFB35HB20
are85]
5M-1994.
O-254AA.
HFB35HB20
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IRHM9250
Abstract: IRHM93250 JANSF2N7423 JANSR2N7423
Text: PD - 91299C RADIATION HARDENED POWER MOSFET THRU-HOLE T0-254AA IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9250 100K Rads (Si) IRHM93250 300K Rads (Si) RDS(on) I D
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91299C
T0-254AA)
IRHM9250
JANSR2N7423
MIL-PRF-19500/662
IRHM93250
JANSF2N7423
O-254AA.
IRHM9250
IRHM93250
JANSF2N7423
JANSR2N7423
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Untitled
Abstract: No abstract text available
Text: PD - 94362 IRFMA450 POWER MOSFET THRU-HOLE Tabless TO-254AA 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFMA450 0.415 Ω 12A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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IRFMA450
O-254AA)
O-254AA.
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: PD - 90495G POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM9140 JANTX2N7236 JANTXV2N7236 JANS2N7236 REF:MIL-PRF-19500/595 100V, P-CHANNEL Part Number RDS(on) ID IRFM9140 0.20Ω -18A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International
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90495G
O-254AA)
IRFM9140
JANTX2N7236
JANTXV2N7236
JANS2N7236
MIL-PRF-19500/595
O-254AA.
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: PD-97415 RADIATION HARDENED IRHMK57160 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT Low-Ohmic TO-254AA 5 TECHNOLOGY Product Summary Part Number IRHMK57160 IRHMK53160 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.013Ω 0.013Ω ID 45A* 45A* IRHMK54160
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PD-97415
IRHMK57160
O-254AA)
IRHMK53160
IRHMK54160
IRHMK58160
1000K
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: PD - 90490D POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM340 JANTX2N7221 JANTXV2N7221 REF:MIL-PRF-19500/596 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM340 0.55 Ω 10A HEXFET® MOSFET technology is the key to International
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90490D
O-254AA)
IRFM340
JANTX2N7221
JANTXV2N7221
MIL-PRF-19500/596
O-254AA.
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: PD - 93880C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57260SE 200V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHM57260SE 100K Rads (Si) RDS(on) ID 0.049Ω 35A* TO-254AA International Rectifier’s R5 TM technology provides
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93880C
O-254AA)
IRHM57260SE
IRHM57260SE
O-254AA
O-254AA.
MIL-PRF-19500
|
IRHM57260SE
Abstract: No abstract text available
Text: PD - 93880C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57260SE 200V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHM57260SE 100K Rads (Si) RDS(on) ID 0.049Ω 35A* TO-254AA International Rectifier’s R5 TM technology provides
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93880C
O-254AA)
IRHM57260SE
IRHM57260SE
O-254AA
O-254AA.
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: PD-93963C 35SGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Description/Features Major Ratings and Characteristics Characteristics 35SGQ045 Units IF AV 35 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 300 A VF @ 35Apk, TJ = 125°C 0.79 V TJ,Tstg Operating and storage -55 to 150
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PD-93963C
35SGQ045
35Apk,
35SGQ045
O-254AA
MIL-PRF-19500
|
Untitled
Abstract: No abstract text available
Text: PD-93963B 35SGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Description/Features Major Ratings and Characteristics Characteristics 35SGQ045 Units IF AV 35 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 300 A VF @ 35Apk, TJ = 125°C 0.79 V TJ,Tstg Operating and storage -55 to 150
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PD-93963B
35SGQ045
35Apk,
35SGQ045
O-254AA
MIL-PRF-19500
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