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    O220A Price and Stock

    Omega Engineering MTO-220A/240V

    LIGHTWEIGHT OIL IMMERSION HEATER WITH 2 ELEMENT DESIGN WITH 2 INCH NPT STEEL SCREW PLUG - Bulk (Alt: MTO-220A/240V)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MTO-220A/240V Bulk 4 Weeks 1
    • 1 $545.0724
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    Omega Engineering TLO-220A-036/120V

    OVER THE SIDE IMMERSION HEATERS FOR MEDIUM OILS - Bulk (Alt: TLO-220A-036/120V)
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    Avnet Americas TLO-220A-036/120V Bulk 6 Weeks 1
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    Newark TLO-220A-036/120V Bulk 1
    • 1 $1654
    • 10 $1654
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    Omega Engineering MTO-220A/120V

    LIGHTWEIGHT OIL IMMERSION HEATER WITH 2 ELEMENT DESIGN WITH 2 INCH NPT STEEL SCREW PLUG - Bulk (Alt: MTO-220A/120V)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MTO-220A/120V Bulk 5 Weeks 1
    • 1 $545.0724
    • 10 $545.0724
    • 100 $545.0724
    • 1000 $545.0724
    • 10000 $545.0724
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    Omega Engineering MTO-220A/480V

    LIGHTWEIGHT OIL IMMERSION HEATER WITH 2 ELEMENT DESIGN WITH 2 INCH NPT STEEL SCREW PLUG - Bulk (Alt: MTO-220A/480V)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MTO-220A/480V Bulk 4 Weeks 1
    • 1 $545.0724
    • 10 $545.0724
    • 100 $545.0724
    • 1000 $545.0724
    • 10000 $545.0724
    		Buy Now

    Omega Engineering TLO-220A-036/240V

    OVER THE SIDE IMMERSION HEATERS FOR MEDIUM OILS - Bulk (Alt: TLO-220A-036/240V)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TLO-220A-036/240V Bulk 6 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Newark TLO-220A-036/240V Bulk 1
    • 1 $1654
    • 10 $1654
    • 100 $1654
    • 1000 $1654
    • 10000 $1654
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    Find more O220A price and stock on Findchips.com

    O220A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF150CF

    Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
    Text: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152


    Original     		PDF BUZ349 SFN152 YTFP152 YTF152 IRFP152 RFH35Nl0 RFK35Nl0 PB125N60HM PB125N60HP IRF150CF GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTFP150 2SK747

    Untitled

    Abstract: No abstract text available
    Text: MBR F,B 20H90CT & MBR(F,B)20H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High barrier technology for improved high temperature performance TO-220AB ITO-220AB MBR20H90CT MBR20H100CT PIN 1 PIN 2 PIN 3 CASE 2 3 1 1 2


    Original     		PDF 20H90CT 20H100CT O-220AB ITO-220AB MBR20H90CT MBR20H100CT MBRF20H90CT MBRF20H100CT O-263AB J-STD-020C,

    V60100C

    Abstract: No abstract text available
    Text: V60100C New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.360 V at IF = 5 A FEATURES • Trench MOS Schottky Technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF V60100C O-220AB 2002/95/EC 2002/96/EC 08-Apr-05 V60100C

    VF30100S

    Abstract: V30100S JESD22-B102D J-STD-002B
    Text: V30100S & VF30100S New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier TO-220AB Ultra Low VF = 0.385 V at IF = 5 A ITO-220AB Major Ratings and Characteristics IF AV 30 A VRRM 100 V IFSM 250 A VF at IF = 30 A 0.69 V


    Original     		PDF V30100S VF30100S O-220AB ITO-220AB O-220AB, J-STD-002B JESD22-B102D VF30100S V30100S JESD22-B102D

    v30100s

    Abstract: No abstract text available
    Text: V30100S, VF30100S, VB30100S & VI30100S New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.385 V at IF = 5 A FEATURES • Trench MOS Schottky Technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V30100S, VF30100S, VB30100S VI30100S O-220AB ITO-220AB V30100S VF30100S J-STD-020C, O-263AB v30100s

    Untitled

    Abstract: No abstract text available
    Text: MBR1090CT & MBR10100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES TO-220AB • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF MBR1090CT MBR10100CT O-220AB 2002/95/EC 2002/96/EC O-220AB 08-Apr-05

    Diode SBL 2040CT

    Abstract: 2030CT
    Text: SBL F,B 2030CT & SBL(F,B)2040CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES ITO-220AB • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF 2030CT 2040CT O-220AB ITO-220AB SBL20xxCT SBLF20xxCT J-STD-020C, O-263AB O-220AB ITO-220AB Diode SBL 2040CT 2030CT

    Untitled

    Abstract: No abstract text available
    Text: UG F,B 8HCT & UG(F,B)8JCT New Product Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier TO-220AB FEATURES • Glass passivated chip junction ITO-220AB • Ultrafast recovery time • Soft recovery characteristics • Low switching losses, high efficiency


    Original     		PDF O-220AB ITO-220AB J-STD-020C, O-263AB O-220AB ITO-220AB 2002/95/EC 2002/96/EC 08-Apr-05

    VTS40100CT

    Abstract: VB40100C
    Text: VTS40100CT, VF40100C, VB40100C & VI40100C New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.375 V at IF = 5 A FEATURES ITO-220AB TO-220AB • Trench MOS Schottky Technology • Low forward voltage drop, low power losses


    Original     		PDF VTS40100CT, VF40100C, VB40100C VI40100C O-220AB ITO-220AB VTS40100CT VF40100C J-STD-020C, O-263AB VTS40100CT VB40100C

    V30100C

    Abstract: JESD22-B102D J-STD-002B
    Text: New Product V30100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A FEATURES • Trench MOS Schottky Technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation


    Original     		PDF V30100C O-220AB 2002/95/EC 2002/96/EC 627ed 08-Apr-05 V30100C JESD22-B102D J-STD-002B

    MBR20H100CT

    Abstract: MBR20H90CT MBRF20H100CT MBRF20H90CT 18AUG06
    Text: MBR F,B 20H90CT & MBR(F,B)20H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High barrier technology for improved high temperature performance TO-220AB ITO-220AB MBR20H90CT MBR20H100CT PIN 1 PIN 2 PIN 3 CASE 2 3 1 1 2


    Original     		PDF 20H90CT 20H100CT O-220AB ITO-220AB MBR20H90CT MBR20H100CT MBRF20H90CT MBRF20H100CT O-263AB J-STD-020C, MBR20H100CT MBR20H90CT MBRF20H100CT MBRF20H90CT 18AUG06

    v30100sg

    Abstract: J-STD-002B 30100SG
    Text: V30100SG, VF30100SG, VB30100SG & VI30100SG New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES ITO-220AB TO-220AB • Trench MOS Schottky Technology • Low forward voltage drop, low power losses


    Original     		PDF V30100SG, VF30100SG, VB30100SG VI30100SG ITO-220AB O-220AB V30100SG J-STD-020C, O-263AB VF30100SG v30100sg J-STD-002B 30100SG

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet SiC Schottky Barrier Diode SCS110AG Dimensions Unit : mm Applications Switching power supply Structure Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible Construction Silicon carbide epitaxial planer type


    Original     		PDF SCS110AG O-220AC R1120A

    Untitled

    Abstract: No abstract text available
    Text: SiC Schottky Barrier Diode SCS106AG Dimensions Unit : mm Applications Switching power supply Structure Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible Construction Silicon carbide epitaxial planer type


    Original     		PDF SCS106AG O-220AC R1120A

    JESD22-B102D

    Abstract: J-STD-002B
    Text: New Product M3060C & MI3060C Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES TO-262AA • Guardring for overvoltage protection K • Lower power losses, high efficiency • Low forward voltage drop 2 3 1 1 M3060C 2 • High forward surge capability


    Original     		PDF M3060C MI3060C O-220AB O-262AA 2002/95/EC 2002/96/EC 08-Apr-05 JESD22-B102D J-STD-002B

    UG DIODE

    Abstract: JESD22-B102D J-STD-002B UG18ACT
    Text: UG F,B 18ACT thru UG(F,B)18DCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop


    Original     		PDF 18ACT 18DCT O-220AB J-STD-020C, O-263AB ITO-220AB 2002/95/EC 2002/96/EC ITO-220AB UG DIODE JESD22-B102D J-STD-002B UG18ACT

    1640CT

    Abstract: JESD22-B102D J-STD-002B SBL1630CT 914 High frequency schottky rectifier DIODE 914 High frequency rectifier DIODE
    Text: SBL F,B 1630CT & SBL(F,B)1640CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF 1630CT 1640CT O-220AB ITO-220AB SBL16xxCT SBLF16xxCT J-STD-020C, O-263AB ITO-220AB 1640CT JESD22-B102D J-STD-002B SBL1630CT 914 High frequency schottky rectifier DIODE 914 High frequency rectifier DIODE

    vf20100s

    Abstract: J-STD-002B
    Text: V20100S, VF20100S, VB20100S & VI20100S New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES ITO-220AB TO-220AB • Trench MOS Schottky Technology • Low forward voltage drop, low power losses


    Original     		PDF V20100S, VF20100S, VB20100S VI20100S ITO-220AB O-220AB V20100S J-STD-020C, O-263AB VF20100S vf20100s J-STD-002B

    MBR10H90CT

    Abstract: No abstract text available
    Text: MBR F,B 10H90CT & MBR(F,B)10H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency


    Original     		PDF 10H90CT 10H100CT O-220AB ITO-220AB J-STD-020C, O-263AB O-220AB ITO-220AB 2002/95/EC 2002/96/EC MBR10H90CT

    transistor C239

    Abstract: transistor C238
    Text: International HH Rectifier PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail” losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		PDF IRGBF20F 10kHz) O-220AB C-241 TQ-220AB C-242 transistor C239 transistor C238

    transistor c246

    Abstract: transistor c245 c245 transistor
    Text: PD - 9.773 International üüRectffier IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features JI* Lc J *.J • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve


    OCR Scan     		PDF IRGBF30F 10kHz) O-220AB C-247 46S5455 TQ-220AB C-248 transistor c246 transistor c245 c245 transistor

    2-4F1C

    Abstract: 2SC3595 2SC3596 2SC3597 2SC3600 2SC3602 2SC3603 2SC3590 2SC3591 2SC3598
    Text: - 164 - T a = 2 5 eC , * E P ( i T c = 2 5 cC m s 1± « £ Vc b o VcEO (V) (V) IC(DC) (A) Pc (W) m n Pc* ICBO m U i ) U ^ r, ft f t 14 hF E [*01(itypfiS] (may1) !<~/1r Vc e (V) (V) ( T a = 2 5 ?C ) (V)' ' W *(V)" Ic (A) Ib (A) C R T Hout 330 150 7 50


    OCR Scan     		PDF 2SC3590 2SC3591 2SC3595 2SC3596 2SC3597 2SC3598 2SC3599 052JF5 2SC3615 2SC3616 2-4F1C 2SC3596 2SC3597 2SC3600 2SC3602 2SC3603 2SC3591 2SC3598

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8