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    BCW70R

    Abstract: BCW69R BCW69 BCW70 720 sot23 DSA003673
    Text: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW69 BCW70 BCW69 BCW70 ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085


    Original     		PDF BCW69 BCW70 BCW69R BCW70R -10mA, -50mA, BCW70R BCW69R BCW69 BCW70 720 sot23 DSA003673

    FET SOT23 60V

    Abstract: BST82
    Text: BST82 SOT23 N CHANNEL ENHANCEMENT IMODE VERTICAL DMOS FET BST82 IIssue 2 - October 1997 PARTMARKING DETAIL – O2 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain Source Voltage V DS VALUE 80 UNIT V Drain Source Voltage non repetitive peak tp ≤ 2ms


    Original     		PDF BST82 175mA, FET SOT23 60V BST82

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 – FEBRUARY 95 FEATURES * BCEV=150V * Very Low Saturation Voltage * High Gain * Inherently Low Noise APPLICATIONS * Emergency Lighting * Low Noise Audio 1.0 180 D=1 D.C 160 t1 140 tp 120 100 0.75


    Original     		PDF ZTX1051A 100ms NY11725

    ztx1056A

    Abstract: BF600 ztx1056 DSA003763
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve


    Original     		PDF ZTX1056A 100ms ZTX1056A 41E-12 0E-13 0E-10 1E-12 6E-12 800E-12 BF600 ztx1056 DSA003763

    FMMD2836

    Abstract: DSA003689
    Text: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON ANODE DIODE PAIR FMMD2836 FMMD2836 ISSUE 1 – FEBRUARY 1995 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15


    Original     		PDF FMMD2836 NY11725 FMMD2836 DSA003689

    tf600

    Abstract: IC4a ZTX1051A DSA003762
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am


    Original     		PDF ZTX1051A 100ms NY11725 tf600 IC4a ZTX1051A DSA003762

    bf500

    Abstract: ZTX1055A 161627 DSA003762
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve


    Original     		PDF ZTX1055A 100ms ZTX1055A 60E-12 0E-13 0E-10 3E-12 6E-12 700E-12 bf500 161627 DSA003762

    FMMD6100

    Abstract: FMMD7000 PARTMARKING at 5b DSA003690
    Text: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR FMMD6100 FMMD6100 ISSUE 2 - OCTOBER 1995 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15


    Original     		PDF FMMD6100 NY11725 FMMD6100 FMMD7000 PARTMARKING at 5b DSA003690

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZTX855 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1056A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance


    Original     		PDF ZTX855 ZTX1056A NY11725

    BAV70

    Abstract: BAV99
    Text: BAV70 SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE PAIR COMMON CATHODE BAV70 ISSUE 2 – JANUARY 1995 PIN CONFIGURATION  2 1 PARTMARKING DETAIL BAV70 – A4 3 ! SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Continuous Reverse Voltage VR 70


    Original     		PDF BAV70 BAV70 BAV99

    ZBD849

    Abstract: transistor bf 970
    Text: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A – MARCH 94 FEATURES * Fast switching


    Original     		PDF ZBD849 ZBD849 transistor bf 970

    FMMD2838

    Abstract: DSA003690
    Text: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR FLLD2838 FMMD2838 ISSUE 2 – NOVEMBER 1996 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085


    Original     		PDF FLLD2838 FMMD2838 100mA NY11725 D81827 OL98NP, FMMD2838 DSA003690

    FMMD2835

    Abstract: A9 SOT23 diode A9 diode A9 sot23 DSA003689
    Text: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON ANODE DIODE PAIR FMMD2835 FMMD2835 ISSUE 1 – FEBRUARY 1995 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15


    Original     		PDF FMMD2835 NY11725 FMMD2835 A9 SOT23 diode A9 diode A9 sot23 DSA003689

    BCW89R

    Abstract: BCW89 DSA003674
    Text: SOT23 PNP PLANAR SMALL SIGNAL TRANSISTORS BCW89 ISSUE 2 – FEBRUARY 1995 PARTMARKING DETAILS – DIM E C B Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059


    Original     		PDF BCW89 BCW89R -10mA, -50mA, 35MHz 200Hz BCW89R BCW89 DSA003674

    Untitled

    Abstract: No abstract text available
    Text: PART OBSOLETE - USE ZVN3310F BST82 SOT23 N CHANNEL ENHANCEMENT IMODE VERTICAL DMOS FET BST82 IIssue 2 - October 1997 PARTMARKING DETAIL – O2 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain Source Voltage V DS VALUE 80 UNIT V Drain Source Voltage


    Original     		PDF ZVN3310F BST82 175mA, 150mA,

    MPS5179

    Abstract: MPS5179 small signal transistor 8-NP S00406
    Text: NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR MPS5179 MPS5179 ISSUE 2 – FEB 1994 FEATURES * HIGH fT=900MHz MIN * MAX CAPACITANCE=1pF * LOW NOISE 5dB APPLICATIONS * CORDLESS TELEPHONES * KEYLESS ENTRY SYSTEMS * WIDEBAND INSTRUMENTATION AMPLIFIERS * TELEMETRY


    Original     		PDF MPS5179 900MHz 100MHz 200MHz MPS5179 MPS5179 small signal transistor 8-NP S00406

    bas16 a6

    Abstract: BAS16 SOT23 zetex BAS16 bas16a6 4963
    Text: SOT23 PNP SILICON HIGH SPEED SWITCHING DIODE BAS16 BAS16 ISSUE 3 – FEBRUARY 1996 PIN CONFIGURATION DIM E C B Millimeters Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059


    Original     		PDF BAS16 D-81673 150mA bas16 a6 BAS16 SOT23 zetex BAS16 bas16a6 4963

    ZTX1053A

    Abstract: BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A t1 140 D=t1 tp D=0.2 D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 m te D=0.5 0.75 t en bi tp 120 Am


    Original     		PDF ZTX1053A 100ms NY11725 ZTX1053A BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12

    FMMD2837

    Abstract: 5467 diode DIODE a5 DSA003690
    Text: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR FMMD2837 FMMD2837 ISSUE 1 – FEBRUARY 1995 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085


    Original     		PDF FMMD2837 NY11725 FMMD2837 5467 diode DIODE a5 DSA003690

    ZBD949

    Abstract: LT1123
    Text: ZBD949 Single Pulse Test Tamb=25 C Single Pulse Test Tcase=25 C 100 10 1 D.C. D.C. 10ms 10ms 1ms 1ms 0.1 100 1 10 0.1 100 0.1 1 10 100 VCE V VCE (V) Safe Operating Area Safe Operating Area 90 2.0 80 D=1(D.C.) t1 70 1.5 60 50 1.0 D=t1 tp t p D=0.5 40 30 0.5


    Original     		PDF ZBD949 P00030 LT1123 ZBD949 LT1123

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 8 A ISSUE 3 - FEBRUARY 1995. — . FEATURES * * V cev =50V Very Low Saturation Voltages * High Gain * 20 A m p s pulse current


    OCR Scan     		PDF ZTX1048A

    TF-450

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 7 A ISSUE 3 -JANUARY 1995_ _ FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching


    OCR Scan     		PDF ZTX1047A NY11725 JS70S7Ã TF-450

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A ISSUE 3 -JANUARY 1995_ — FEATURES * * * * - V ceo=120V 3 A m p continuous Current 6 A m p pulse Current Very Low Saturation Voltage APPLICATIONS *


    OCR Scan     		PDF ZTX1055A NY11725 3510Metroplaza,

    98-7

    Abstract: No abstract text available
    Text: Zetex pic Fields New Road, Chadderton, Oldham, OL9 8NP, United Kingdom Telephone:061-627 5105 Sales 061-627 4963 (General Enquiries) Facsimile: 061-627 5467 Telex: 668038 A Telemetrix PLC Group Company Zetex GmbH Drosselweg 30, 8000 München 82, Germany


    OCR Scan     		PDF NY11725, 98-7