NXP DC TO MICROWAVE Search Results
NXP DC TO MICROWAVE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
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MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN |
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MGN1S0508MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-8V GAN |
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MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN |
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MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN |
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NXP DC TO MICROWAVE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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I1228Contextual Info: CLF1G0035-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Product data sheet 1. Product profile 1.1 General description CLF1G0035-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz. |
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CLF1G0035-100 CLF1G0035-100 I1228 | |
Contextual Info: CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-50 is a broadband general purpose 50 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz. |
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CLF1G0035S-50 CLF1G0035S-50 | |
Contextual Info: CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz. |
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CLF1G0035S-100 CLF1G0035S-100 | |
bga6589
Abstract: NXP MARKING 11* 3PIN MMIC marking code C3 sot89
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BGA6589 BGA6589 BGA6x89 NXP MARKING 11* 3PIN MMIC marking code C3 sot89 | |
Contextual Info: BGA6589 MMIC wideband medium power amplifier Rev. 3 — 28 November 2011 Product data sheet 1. Product profile 1.1 General description The BGA6589 is a silicon Monolithic Microwave Integrated Circuit MMIC wideband medium power amplifier with internal matching circuit in a 3-pin SOT89 plastic low thermal |
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BGA6589 BGA6589 BGA6x89 | |
smd marking codes list sot363
Abstract: rf mmic marking code 09 SOT363
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BGM1013 OT363 smd marking codes list sot363 rf mmic marking code 09 SOT363 | |
MARKING CODE c5 sc-62
Abstract: BGA6589 marking 478 mmic SMD 5056 MMIC marking 81 BGA2031 NXP MARKING 11* 3PIN 8948
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BGA6589 BGA6589 BGA6x89 MARKING CODE c5 sc-62 marking 478 mmic SMD 5056 MMIC marking 81 BGA2031 NXP MARKING 11* 3PIN 8948 | |
BGA6289
Abstract: BGA2031
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BGA6289 BGA6289 BGA6x89 BGA2031 | |
marking 259 sot363Contextual Info: BGM1014 MMIC wideband amplifier Rev. 2 — 19 September 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. |
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BGM1014 OT363 marking 259 sot363 | |
Contextual Info: BGM1014 MMIC wideband amplifier Rev. 2 — 19 September 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. |
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BGM1014 OT363 | |
marking s222Contextual Info: BGM1014 MMIC wideband amplifier Rev. 2 — 19 September 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. |
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BGM1014 OT363 771-BGM1014-T/R BGM1014 marking s222 | |
Contextual Info: BGM1013 MMIC wideband amplifier Rev. 5 — 19 September 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. |
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BGM1013 OT363 | |
BGA2031
Abstract: BGA6489 smd code marking 616 smd Product type marking code 039 MGX400
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BGA6489 BGA6489 BGA6x89 BGA2031 smd code marking 616 smd Product type marking code 039 MGX400 | |
2.4 ghz transistor wifi amplifier
Abstract: Germanium power 160 germanium transistor wifi lna Ghz dB transistor
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BFU768F OT343F JESD625-A 2.4 ghz transistor wifi amplifier Germanium power 160 germanium transistor wifi lna Ghz dB transistor | |
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BFU790F
Abstract: JESD625-A Germanium power
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BFU790F OT343F JESD625-A BFU790F Germanium power | |
BFU760F
Abstract: bfu760 JESD625-A dielectric resonator oscillator germanium transistor table Germanium power
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BFU760F OT343F JESD625-A BFU760F bfu760 dielectric resonator oscillator germanium transistor table Germanium power | |
BFU725F
Abstract: germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference JESD625-A Germanium power
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BFU725F OT343F JESD625-A BFU725F germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference Germanium power | |
BFU690F
Abstract: JESD625-A umts
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BFU690F OT343F JESD625-A BFU690F umts | |
BFU610F
Abstract: bfu6 NXP Bluetooth IC JESD625-A BFU610
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BFU610F OT343F JESD625-A BFU610F bfu6 NXP Bluetooth IC BFU610 | |
DRO lnb
Abstract: JESD625-A BFU630 BFU630F
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BFU630F OT343F JESD625-A DRO lnb BFU630 BFU630F | |
BFU660F
Abstract: sdars JESD625-A 25CCBS
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BFU660F OT343F JESD625-A BFU660F sdars 25CCBS | |
Contextual Info: BFU610F NPN wideband silicon RF transistor Rev. 2 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION |
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BFU610F OT343F JESD625-A | |
transistor marking N1
Abstract: LNB ka band Germanium power
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BFU725F/N1 OT343F JESD625-A BFU725F transistor marking N1 LNB ka band Germanium power | |
JESD625-A
Abstract: BFU710F DRO lnb Germanium power
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BFU710F OT343F JESD625-A BFU710F DRO lnb Germanium power |