NX7561JB Search Results

NX7561JB

Abstract: NX7561JB-BA laser diode 1550 ns single mode
Contextual Info: PRELIMINARY DATA SHEET InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE FOR 1550 nm OTDR APPLICATION NX7561JB FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 135 mW MIN at IFP = 1000 mA, Pulse width PW = 10ms, Duty = 1% The NX7561JB is a 1550 nm developed strained Multiple

NX7561JB-BC

Abstract: NX7561JB-BC-AZ
Contextual Info: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE NX7561JB-BC FOR OTDR APPLICATION 135 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 135 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10ms, Duty = 1% NEC's NX7561JB-BC is a 1550 nm developed strained Multiple Quantum Well (st-MQW) structure pulsed laser diode DIP

otdr

Abstract: NX7327BF-AA NX7328BF-AA NX7329BB-AA NX7361JB-BC NX7526BF-AA NX7527BF-AA NX7561JB-BC 81 110 thermistor
Contextual Info: DATA SHEET LASER DIODE NX7561JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION DESCRIPTION The NX7561JB-BC is a 1 550 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler.

Contextual Info: PRELIMINARY DATA SHEET InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE FOR 1550 nm OTDR APPLICATION NX7561JB FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 135 mW MIN at IFP = 1000 mA, Pulse width PW = 10ms, Duty = 1% The NX7561JB is a 1550 nm developed strained Multiple

Laser FP 1550 mW

Abstract: NX7561JB-BC
Contextual Info: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE NX7561JB-BC FOR OTDR APPLICATION 135 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 135 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10ms, Duty = 1% NEC's NX7561JB-BC is a 1550 nm developed strained Multiple Quantum Well (st-MQW) structure pulsed laser diode DIP

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

310 thermistor

Abstract: k 2545 NX7327BF-AA NX7328BF-AA NX7329BB-AA NX7361JB-BC NX7526BF-AA NX7527BF-AA NX7528BF-AA OTDR
Contextual Info: DATA SHEET LASER DIODE NX7361JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION The NX7361JB-BC is a 1 310 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler.

10G EML TOSA

Abstract: TOSA 10G DFB EML TOSA 25g 10G APD ROSA TOSA 10G EML laser DFB 1550nm 10mW NEC TOSA 10G 10g tosa EML 25g EML TOSA TOSA 1310 10G
Contextual Info: NEC Fiber Optic Components January 2004 With over 100 years’ experience in communications technology, few companies can match NEC for strength and stability. The company’s manufacturing facilities are the most advanced in the world and their products are widely

Contextual Info: PRELIMINARY DATA SHEET InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1625 nm OTDR APPLICATION NX7661JB FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width PW = 10 ms, Duty = 1% The NX7661JB is a 1625 nm developed strained Multiple

otdr

Abstract: NX7327BF-AA NX7328BF-AA NX7329BB-AA NX7361JB-BC NX7526BF-AA NX7527BF-AA NX7661JB-BC
Contextual Info: DATA SHEET LASER DIODE NX7661JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION DESCRIPTION The NX7661JB-BC is a 1 625 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler.

thermistor 102

Abstract: NX7561JB NX7661JB NX7661JB-BA
Contextual Info: PRELIMINARY DATA SHEET InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1625 nm OTDR APPLICATION NX7661JB FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width PW = 10 ms, Duty = 1% The NX7661JB is a 1625 nm developed strained Multiple

310 thermistor

Abstract: COAXIAL AUDIO ic nec laser diode OTDR NDL7103 NDL7113 NDL7153 NDL7163 NDL7503P NDL7513P NX7661JB
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX7661JB InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION DESCRIPTION The NX7661JB is a 1 625 nm newly developed Strained Multiple Quantum Well St-MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical