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    onsemi NVD4805NT4G

    MOSFET N-CH 30V 12.7A/95A DPAK
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    NVD4805N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NVD4805NT4G On Semiconductor NVD4805 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF

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    369AA

    Abstract: No abstract text available
    Text: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features •     Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N


    Original
    PDF NTD4805N, NVD4805N AEC-Q101 NTD4805/D 369AA

    Untitled

    Abstract: No abstract text available
    Text: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N


    Original
    PDF NTD4805N, NVD4805N AEC-Q101 NTD4805N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N


    Original
    PDF NTD4805N, NVD4805N NTD4805N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original
    PDF NTD4805N, NVD4805N NTD4805N/D