NTE6664 Search Results

Contextual Info: NTE6664 Integrated Circuit 64K–Bit Dynamic RAM Description: The NTE6664 is a 65,536 Bit, high–speed, dynamic Random Access Memory. Organized as 65,536 one–bit words and fabricated using HMOS high–performance N–Channel silicon–gate technology, this 5V only dynamic RAM combines high performance with low cost and improved reliability.

NTE6664

Contextual Info: NTE6664 Integrated Circuit 64K–Bit Dynamic RAM Description: The NTE6664 is a 65,536 Bit, high–speed, dynamic Random Access Memory. Organized as 65,536 one–bit words and fabricated using HMOS high–performance N–Channel silicon–gate technology, this 5V only dynamic RAM combines high performance with low cost and improved reliability.

NTE6802

Abstract: NTE6532
Contextual Info: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE6507 28-Lead DI P, See Diag. 253 NMOS, 8-B it Microprocessor (MPU) w/On Chip Clock OSC R E 3 rf_V - / _ Q 0 2 (Outp) V ssH Q 0 0 (In) NTE6508 16-Lead DIP, See Diag. 249 CMOS, 1K Static RAM (SRAM), 300ns