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    NTD4813NHT4G Price and Stock

    onsemi NTD4813NHT4G

    MOSFET N-CH 30V 7.6A/40A DPAK
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    DigiKey NTD4813NHT4G Reel
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    Avnet Americas NTD4813NHT4G Reel 0 Weeks, 2 Days 3,125
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    Verical NTD4813NHT4G 207,500 1,315
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    NTD4813NHT4G 74,585 1,315
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    NTD4813NHT4G 30,000 1,315
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    Rochester Electronics NTD4813NHT4G 312,085 1
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    ComSIT USA NTD4813NHT4G 2,231
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    Flip Electronics NTD4813NHT4G 10,000
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    Rochester Electronics LLC NTD4813NHT4G

    MOSFET N-CH 30V 7.6A/40A DPAK
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    DigiKey NTD4813NHT4G Bulk 1,074
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    Flip Electronics NTD4813NHT4G

    POWER MOSFET 30V 40A 13 MOHM SIN
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    DigiKey NTD4813NHT4G Reel 3,000
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    NTD4813NHT4G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTD4813NHT4G On Semiconductor NTD4813 - TRANSISTOR 40 A, 30 V, 0.0259 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, DPAK, CASE 369C, 3 PIN, FET General Purpose Power Original PDF
    NTD4813NHT4G On Semiconductor Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Original PDF

    NTD4813NHT4G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13nhg

    Abstract: 48 13nhg mosfet 48 13nhg 4813nhg 4813NH 13nhg mosfet 369D NTD4813NH NTD4813NHT4G
    Text: NTD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original
    PDF NTD4813NH NTD4813NH/D 13nhg 48 13nhg mosfet 48 13nhg 4813nhg 4813NH 13nhg mosfet 369D NTD4813NH NTD4813NHT4G

    4813NH

    Abstract: 13nhg 48 13nhg NVD4813NH 48 13nhg mosfet
    Text: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q101 Qualified and PPAP Capable − NVD4813NH


    Original
    PDF NTD4813NH, NVD4813NH AEC-Q101 NTD4813NH/D 4813NH 13nhg 48 13nhg 48 13nhg mosfet

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original
    PDF CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G

    13nhg

    Abstract: 48 13nhg mosfet 4813nhg 48 13nhg 4813NH 369D NTD4813NH 13nhg mosfet
    Text: NTD4813NH Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Devices


    Original
    PDF NTD4813NH 25aws NTD4813NH/D 13nhg 48 13nhg mosfet 4813nhg 48 13nhg 4813NH 369D NTD4813NH 13nhg mosfet

    Untitled

    Abstract: No abstract text available
    Text: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q101 Qualified and PPAP Capable − NVD4813NH


    Original
    PDF NTD4813NH, NVD4813NH NTD4813NH/D

    13nhg

    Abstract: 48 13nhg 48 13nhg mosfet 4813NH 4813nhg NTD4813NH-1G 369D NTD4813NH
    Text: NTD4813NH Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb-Free Devices


    Original
    PDF NTD4813NH NTD4813NH/D 13nhg 48 13nhg 48 13nhg mosfet 4813NH 4813nhg NTD4813NH-1G 369D NTD4813NH

    Untitled

    Abstract: No abstract text available
    Text: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG NVD Prefix for Automotive and Other Applications Requiring


    Original
    PDF NTD4813NH, NVD4813NH NTD4813NH/D