12v 6A transformer
Abstract: 12v 10A transformer MESB-24NO timer contactor NSC10 nh00 fuse Transformer 12V NSB06 MSTT-111 NSB16
Text: NSB MINIATURE CIRCUIT BREAKERS 6KA CAT REF RATING POLES MODULE 6A 10A 16A 20A 32A 40A 50A 1 1 1 1 1 1 1 1 1 1 1 1 1 1 NSB06 NSB10 NSB16 NSB20 NSB32 NSB40 NSB50 9 ACCESSORIES MCBLDX WPL MCB Locking device Padlock for MCBLDX NSC MODULAR CARTRIDGE FUSE HOLDERS WITH FUSE
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NSB06
NSB10
NSB16
NSB20
NSB32
NSB40
NSB50
CFL05
CFL10
CFL15
12v 6A transformer
12v 10A transformer
MESB-24NO
timer contactor
NSC10
nh00 fuse
Transformer 12V
NSB06
MSTT-111
NSB16
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRC4144E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA4144E DRC2144E in NS through hole type package • Package Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
DRC4144E
DRA4144E
DRC2144E
DRC4144E0A
pla202
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRC4144T Silicon NPN epitaxial planar type For digital circuits Complementary to DRA4144T DRC2144T in NS through hole type package • Features Package High forward current transfer ratio hFE with excellent linearity
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2002/95/EC)
DRC4144T
DRA4144T
DRC2144T
DRC4144T0A
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IC marking TY
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC4501 Silicon NPN epitaxial planar type For low frequency amplification DSC2501 in NS through hole type package • Package Features Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
DSC4501
DSC2501
IC marking TY
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRA4124T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4124T DRA2124T in NS through hole type package • Features Package High forward current transfer ratio hFE with excellent linearity
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2002/95/EC)
DRA4124T
DRC4124T
DRA2124T
DRA4124T0A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRA4152Z Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4152Z DRA2152Z in NS through hole type package • Features Package Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
DRA4152Z
DRC4152Z
DRA2152Z
DRA4152Z0A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRA4523Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4523Y DRA2523Y in NS through hole type package • Package Contributes to miniaturization of sets, mount area reduction
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2002/95/EC)
DRA4523Y
DRC4523Y
DRA2523Y
DRA4523Y0A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRA4124T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4124T DRA2124T in NS through hole type package • Package High forward current transfer ratio hFE with excellent linearity
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2002/95/EC)
DRA4124T
DRC4124T
DRA2124T
DRA4124T0A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRC4114Y Silicon NPN epitaxial planar type For digital circuits Complementary to DRA4114Y DRC2114Y in NS through hole type package • Package Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
DRC4114Y
DRA4114Y
DRC2114Y
DRC4114Y0A
pla202
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRA4114E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4114E DRA2114E in NS through hole type package • Features Package Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
DRA4114E
DRC4114E
DRA2114E
DRA4114E0A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRA4114Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4114Y DRA2114Y in NS through hole type package • Package Low collector-emitter saturation voltage VCE(sat)
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DRA4114Y
DRC4114Y
DRA2114Y
DRA4114Y0A
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Z247
Abstract: Z249 SI2000LSQ2180BYE-2.86E
Text: CHROMEGA VS. GOLD-0.07 ATOMIC PERCENT IRON THERMOCOUPLE Table of Temperature vs. Thermoelectric Voltage Temperature KELVIN E, µV Temperature (KELVIN) E, µV Temperature (KELVIN) E, µV Temperature (KELVIN) E, µV 545.40 561.86 578.31 594.76 611.22 70
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PR-19-2-100-1/8-6-E
NEPB-ICSS-14G-12
NEPB-2-100-1/8-6-E
NBS-ICSS-14G-12
NBS-2-100-1/8-6-E
NSB-ICSS-14G-12
NSB-2-100-1/8-6-E
NBB-ICSS-14G-12
NBB-2-100-1/8-6-E
NBN-ICSS-14G-12
Z247
Z249
SI2000LSQ2180BYE-2.86E
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Untitled
Abstract: No abstract text available
Text: HN29V1G91T-30 128M x 8-bit AG-AND Flash Memory REJ03C0056-0300Z Rev. 3.00 Jun.03.2004 Description The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND Assist GateAND type Flash memory cell using multi level cell technology provides both the most cost effective
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HN29V1G91T-30
REJ03C0056-0300Z
HN29V1G91
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRA4143E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4143E DRA2143E in NS through hole type package • Features Package Low collector-emitter saturation voltage VCE(sat)
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DRA4143E
DRC4143E
DRA2143E
DRA4143E0A
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WYLEX
Abstract: carlo gavazzi SP 115 230
Text: domestic commercial industrial circuit protection Founded in 1897, Wylex introduced the first ‘consumer unit’ to the electrical industry, this original design was the forerunner to the ‘Standard Range’, which is still in wide use today across the world.
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WY2074a
WYLEX
carlo gavazzi SP 115 230
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Untitled
Abstract: No abstract text available
Text: Thermocouple Heads To Order Specify Model No. Material NB1A Cast Iron 92 (35⁄8) Type Cast NB2 Burnished Die Cast Aluminum Iron NB1A NB1A-0 NB1A-2 NB1A-4 $23 26 28 MADE IN USA 86 (33⁄8) Burnished Die Cast Aluminum NB2-0 NB2-2 NB2-4 23 26 28 NEPA NEPA-0
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300mm
300mm
150mm
XC-14-K-12
XC-14-E-12
XC-14-J-12
XC-20-K-12
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRA4144T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4144T DRA2144T in NS through hole type package • Package High forward current transfer ratio hFE with excellent linearity
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2002/95/EC)
DRA4144T
DRC4144T
DRA2144T
DRA4144T0A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRC4144W Silicon NPN epitaxial planar type For digital circuits Complementary to DRA4144W DRC2144W in NS through hole type package • Package Low collector-emitter saturation voltage VCE(sat)
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DRC4144W
DRA4144W
DRC2144W
DRC4144W0A
pla202
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRA4123J Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4123J DRA2123J in NS through hole type package • Features Package Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
DRA4123J
DRC4123J
DRA2123J
DRA4123J0A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRC4114T Silicon NPN epitaxial planar type For digital circuits Complementary to DRA4114T DRC2114T in NS through hole type package • Package High forward current transfer ratio hFE with excellent linearity
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2002/95/EC)
DRC4114T
DRA4114T
DRC2114T
DRC4114T0A
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSA4002 Silicon PNP epitaxial planar type For general amplification Complementary to DSC4002 DSA2002 in NS through hole type package • Features Package High forward current transfer ratio hFE with excellent linearity
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DSA4002
DSC4002
DSA2002
DSA4002Ã
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HN29V1G91T-30
Abstract: NSB2 8029 l2 0004H 0005H HN29V1G91
Text: HN29V1G91T-30 128M x 8-bit AG-AND Flash Memory REJ03C0056-0400Z Rev. 4.00 Jul.20.2004 Description The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND Assist GateAND type Flash memory cell using multi level cell technology provides both the most cost effective
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HN29V1G91T-30
REJ03C0056-0400Z
HN29V1G91
HN29V1G91T-30
NSB2
8029 l2
0004H
0005H
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varta v60r
Abstract: VARTA V170R GP60BNK-3A3H VARTA 60DK mempac 55611-702-012 varta v60r battery v60r 53310703012 QTC85
Text: 3 Volt Lithium Cells • 3.6 Lithium ■ Nicad Computer Packs ■ NIMH Computer Packs ■ Board Mount Lithium Batteries ■ PLC Batteries ■ Laptop Batteries ■ Bar Code Scanner Batteries ■ HELPFUL HINT Whether you are looking for a replacement battery for your laptop main power or memory backup or your customers bar code scanner. We have the battery!
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BCS-17NMH
3500MAH
FC-486
F-2051-1000
BCS-18
BCS-18NMH
1400MAH
2700MAH
F-2049-1000-02
BCS-19
varta v60r
VARTA V170R
GP60BNK-3A3H
VARTA 60DK
mempac
55611-702-012
varta v60r battery
v60r
53310703012
QTC85
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DRC4124E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA4124E DRC2124E in NS through hole type package • Package Low collector-emitter saturation voltage VCE(sat)
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DRC4124E
DRA4124E
DRC2124E
DRC4124E0A
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