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    NRVBS3100T3G Price and Stock

    onsemi NRVBS3100T3G

    Schottky Diodes & Rectifiers RECTFR 3A 100V SURFACE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NRVBS3100T3G 3,667
    • 1 $0.88
    • 10 $0.649
    • 100 $0.541
    • 1000 $0.392
    • 10000 $0.334
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    Verical NRVBS3100T3G 7,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.3322
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    NRVBS3100T3G 2,490 17
    • 1 -
    • 10 -
    • 100 $0.4769
    • 1000 $0.3589
    • 10000 $0.3589
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    Future Electronics NRVBS3100T3G Reel 2,500 5 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.325
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    NRVBS3100T3G Reel 5 Weeks 7,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.325
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    Onlinecomponents.com NRVBS3100T3G
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.3319
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    NRVBS3100T3G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NRVBS3100T3G On Semiconductor NRVBS3100 - DIODE RECTIFIER DIODE, Rectifier Diode Original PDF

    NRVBS3100T3G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MBRS3100T3G, NRVBS3100T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS3100T3G, NRVBS3100T3G MBRS3100T3/D PDF

    403 marking

    Abstract: MBRS3100T3G case 403 SMC 403-03 NRVBS3100T3G
    Text: MBRS3100T3G, NRVBS3100T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS3100T3G, NRVBS3100T3G MBRS3100T3/D 403 marking MBRS3100T3G case 403 SMC 403-03 PDF