NPN VCE 900V Search Results

NPN VCE 900V Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

NPN VCE 900V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SD1166 Abstract: darlington NPN 600V 8a Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1166 HIGH POWER SWITCHING APPLICATION. AC & MOTOR CONTROL APPLICATION. INVERTER APPLICATION. FEATURES: . High Voltage : VcE SUS >900V . Triple Diffused Design . Darlington Design MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC	OCR Scan	2SD1166 S300//S, 1000kg AR51A 2SD1166 darlington NPN 600V 8a	PDF
TS13003HV Abstract: TS13003HVCT 1.5A NPN power transistor TO-92 900V npn transistor Text: TS13003HV High Voltage NPN Transistor BVCEO = 530V BVCBO = 900V Ic = 1.5A VCE SAT , = 0.5V @ Ic / Ib = 0.5A / 0.1A Pin assignment: 1. Emitter 2. Collector 3. Base Features Ordering Information High voltage. Part No. Packing TS13003HVCT B0 Bulk Pack TO-92	Original	TS13003HV TS13003HVCT 300uS, TS13003HV 1.5A NPN power transistor TO-92 900V npn transistor	PDF
1.5A NPN power transistor TO-92 Abstract: TS13003HV TS13003HVCT NPN transistor 900v Text: TS13003HV High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 530V BVCBO 900V IC 1.5A VCE SAT Features 0.5V @ IC / IB = 0.5A / 0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type	Original	TS13003HV TS13003HVCT 1.5A NPN power transistor TO-92 TS13003HV NPN transistor 900v	PDF
Transistor A14 Abstract: No abstract text available Text: TS13002HV High Voltage NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 450V BVCBO 900V IC 0.8A VCE SAT Features ● High Voltage ● High Speed Switching 0.6V @ IC=0.2A, IB=0.04A Block Diagram Structure ● Silicon Triple Diffused Type	Original	TS13002HV TS13002HVCT Transistor A14	PDF
Untitled Abstract: No abstract text available Text: TS13003HV High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 530V BVCBO 900V IC 1.5A VCE SAT Features 0.5V @ IC / IB = 0.5A / 0.1A Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type	Original	TS13003HV TS13003HVCT	PDF
Untitled Abstract: No abstract text available Text: TS13002HV High Voltage NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 450V BVCBO 900V IC 0.8A VCE SAT Features ● High Voltage ● High Speed Switching 0.6V @ IC=0.2A, IB=0.04A Block Diagram Structure ● Silicon Triple Diffused Type	Original	TS13002HV TS13002HVCT	PDF
1.5A NPN power transistor TO-92 Abstract: TS13003HV TS13003HVCT NPN transistor 900v 1.5A 900V TO-92 0.5A NPN power switching transistor TO-92 NPN Transistor 1A 800V to - 92 Text: TS13003HV High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 530V BVCBO 900V IC 1.5A VCE SAT Features 0.5V @ IC / IB = 0.5A / 0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type	Original	TS13003HV TS13003HVCT 1.5A NPN power transistor TO-92 TS13003HV NPN transistor 900v 1.5A 900V TO-92 0.5A NPN power switching transistor TO-92 NPN Transistor 1A 800V to - 92	PDF
NPN transistor 900v Abstract: No abstract text available Text: TS13003HV High Voltage NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 530V BVCBO 900V IC 1.5A VCE SAT Features 0.5V @ IC=0.5A, IB=0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type	Original	TS13003HV TS13003HVCT NPN transistor 900v	PDF
NPN Transistor 1A 400V Abstract: BU326A BU326 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU326A DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max.) @ IC= 2.5A APPLICATIONS ·Designed for use in operating in color TV receivers chopper	Original	BU326A NPN Transistor 1A 400V BU326A BU326	PDF
MG60M1AL1 Abstract: TOSHIBA TRANSISTOR MG60M1AL1 Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG60M1AL1 HIGH POWER SWITCHING APPLICATIONS. INDUCTION HEATING APPLICATIONS. Unit in FEATURES: , With Buult-in Free Wheeling Diode . High DC Current: Gain 4 ±0.2 04.5 : hjrE=100 Min. (Ic=60A) . Low Saturation Voltage : VcE(sat)*2V(Max.)(Iq = 60A)	OCR Scan	MG60M1AL1 MG60M1AL1 TOSHIBA TRANSISTOR MG60M1AL1	PDF
Untitled Abstract: No abstract text available Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M1AL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm INDUCTION HEATING APPLICATIONS. 5 0 ± 0 .5 . With Built-in Free Wheeling Diode. . High DC Current Gain : hpE=100 Min. (Ic=75A) . Low Saturation Voltage : VCE(sat)=2V(Max.)(IC=75A)	OCR Scan	MG75M1AL1	PDF
LC3000 Abstract: MG75M1AL1 Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M1AL1 HIGH P OWER S W I T C H I N G APPLICATIONS. I NDUCTION H E A TING APPLICATIONS. . With Built-in Free Wheeling Diode. . High DC Current Gain : h]rj?=100 Min. (Ic=75A) . Low Saturation Voltage : VCE(sat)=2V(Max.)(IC=75A)	OCR Scan	MG75M1AL1 LC3000 MG75M1AL1	PDF
2SC3156 Abstract: PW3300 npn transistors 400V 3A Text: SavantIC Semiconductor Product Specification 2SC3156 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage : VCBO=900V Min ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications	Original	2SC3156 2SC3156 PW3300 npn transistors 400V 3A	PDF
2SC3151 Abstract: 400E Text: SavantIC Semiconductor Product Specification 2SC3151 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage VCBO 900V ·Fast switching speed ·Wide ASO Safe Operating Area APPLICATIONS ·800V/1.5A Switching Regulator Applications	Original	2SC3151 00V/1 2SC3151 400E	PDF

2sc3150 Abstract: 200D Text: SavantIC Semiconductor Product Specification 2SC3150 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High breakdown voltage : VCBO=900V Min ·Fast switching speed. ·Wide ASO (Safe Operating Area) APPLICATIONS ·800V/3A switching regulator applications	Original	2SC3150 O-220C 00V/3A 10MHz 2sc3150 200D	PDF
2SC3149 Abstract: NPN 800V Text: Product Specification www.jmnic.com 2SC3149 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage: VCBO=900V Min ・Fast switching speed. ・Wide ASO (Safe Operating Area) APPLICATIONS ・800V/1.5A switching regulator applications	Original	2SC3149 O-220C 00V/1 10MHz 2SC3149 NPN 800V	PDF
2SC3149 Abstract: npn transistors 400V 0.1A 400C Text: SavantIC Semiconductor Product Specification 2SC3149 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High breakdown voltage: VCBO=900V Min ·Fast switching speed. ·Wide ASO (Safe Operating Area) APPLICATIONS ·800V/1.5A switching regulator applications	Original	2SC3149 O-220C 00V/1 10MHz 2SC3149 npn transistors 400V 0.1A 400C	PDF
2SC3156 Abstract: No abstract text available Text: Inchange Semiconductor Product Specification 2SC3156 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage : VCBO=900V Min ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications	Original	2SC3156 2SC3156	PDF
NPN Transistor 1A 400V Abstract: 2SC3150 2sC3150 transistor NPN Transistor 1.5A 400V transistor 2sc3150 900VV transistor VCE 900V NPN Transistor 1.5A 5V NPN transistor 900v Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3150 DESCRIPTION •High Breakdown Voltage: V BR CBO= 900V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator Applications	Original	2SC3150 NPN Transistor 1A 400V 2SC3150 2sC3150 transistor NPN Transistor 1.5A 400V transistor 2sc3150 900VV transistor VCE 900V NPN Transistor 1.5A 5V NPN transistor 900v	PDF
2SC3152 Abstract: No abstract text available Text: SavantIC Semiconductor Product Specification 2SC3152 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage VCBO 900V ·Fast switching speed ·Wide ASO Safe Operating Area APPLICATIONS ·800V/3A Switching Regulator Applications	Original	2SC3152 00V/3A 2SC3152	PDF
2SC3149 Abstract: No abstract text available Text: Inchange Semiconductor Product Specification 2SC3149 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage: VCBO=900V Min ・Fast switching speed. ・Wide ASO (Safe Operating Area) APPLICATIONS ・800V/1.5A switching regulator applications	Original	2SC3149 O-220C 00V/1 2SC3149	PDF
c5042f Abstract: KSC5042FTU KSC5042F KSC5042FYDTU Text: KSC5042F KSC5042F High Voltage Switchihg Dynamic Focus Application • • • • High Collector-Emitter Breakdown Voltage : BVCEO=900V Small Cob =2.8pF Typ. Wide S.O.A High reliability TO-220F 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor	Original	KSC5042F O-220F KSC5042F KSC5042FTU KSC5042FYDTU c5042f	PDF
NPN transistor 900v to126 Abstract: No abstract text available Text: KSC5042M KSC5042M High Voltage Switchihg Dynamic Focus Application • • • • High Collector-Emitter Breakdown Voltage : BVCEO=900V Small Cob =2.8pF Typ. Wide S.O.A High reliability TO-126 1 1. Emitter 2.Collector 3.Base NPN Triple Diffused Planar Silicon Transistor	Original	KSC5042M O-126 KSC5042MSTU KSC5042MSTSSTU O-126 NPN transistor 900v to126	PDF
2SC4020 Abstract: 2SC4020 equivalent Text: Inchange Semiconductor Product Specification 2SC4020 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High breakdown voltage : VCBO=900V Min ·Wide area of safe operation APPLICATIONS ·For switching regulator and general purpose applications	Original	2SC4020 O-220C 2SC4020 2SC4020 equivalent	PDF

NPN VCE 900V Search Results

NPN VCE 900V Result Highlights (5)

NPN VCE 900V Datasheets Context Search

2SD1166

TS13003HV

1.5A NPN power transistor TO-92

Transistor A14

Untitled

Untitled

1.5A NPN power transistor TO-92

NPN transistor 900v

NPN Transistor 1A 400V

MG60M1AL1

Untitled

LC3000

2SC3156

2SC3151

2sc3150

2SC3149

2SC3149

2SC3156

NPN Transistor 1A 400V

2SC3152

2SC3149

c5042f

NPN transistor 900v to126

2SC4020