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    NPN TWO MONOLITHIC TRANSISTORS Search Results

    NPN TWO MONOLITHIC TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TWO MONOLITHIC TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "PNP Transistor array"

    Abstract: pnp 8 transistor array dual matched PNP ST 2n3904 TRANSISTOR PNP "Microphone Preamplifiers" NPN Two monolithic transistors DIELECTRICALLY ISOLATED pin configuration NPN transistor 2n3906 pnp array 2N3904
    Text: T H AT Corporation Quad Low-Noise NPN / PNP Transistor Array THAT140 FEATURES APPLICATIONS • Two Matched NPN Transistors Two Matched PNP Transistors · Monolithic Construction · Low Noise — 0.75 nV/ Hz PNP — 0.8 nV/ Hz (NPN) · High Speed — ft= 350 MHz (NPN)


    Original     		PDF THAT140 THAT140 "PNP Transistor array" pnp 8 transistor array dual matched PNP ST 2n3904 TRANSISTOR PNP "Microphone Preamplifiers" NPN Two monolithic transistors DIELECTRICALLY ISOLATED pin configuration NPN transistor 2n3906 pnp array 2N3904

    Untitled

    Abstract: No abstract text available
    Text: Quad Low-Noise NPN / PNP Transistor Array T H AT Corporation THAT140 FEATURES APPLICATIONS • Two Matched NPN Transistors Two Matched PNP Transistors · Monolithic Construction · Low Noise — 0.75 nV/ Hz PNP — 0.8 nV/ Hz (NPN) · High Speed — ft= 350 MHz (NPN)


    Original     		PDF THAT140 THAT140

    419B-02

    Abstract: NSM21356DW6T1G SC marking code NPN transistor
    Text: NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series


    Original     		PDF NSM21356DW6T1G NSM21356DW6T1G SC-88/SOT-363 NSM21356DW6/D 419B-02 SC marking code NPN transistor

    419B-02

    Abstract: NSM21156DW6T1G marking .544 sot363 NSM21
    Text: NSM21156DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21156DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series


    Original     		PDF NSM21156DW6T1G NSM21156DW6T1G SC-88/SOT-363 NSM21156DW6/D 419B-02 marking .544 sot363 NSM21

    Untitled

    Abstract: No abstract text available
    Text: NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series


    Original     		PDF NSM21356DW6T1G NSM21356DW6T1G SC-88/SOT-363 NSM21356DW6/D

    Untitled

    Abstract: No abstract text available
    Text: NSM21156DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21156DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series


    Original     		PDF NSM21156DW6T1G NSM21156DW6T1G SC-88/SOT-363 NSM21156DW6/D

    2N3906 PNP bipolar junction transistor

    Abstract: ST 2n3904 TRANSISTOR PNP Microphone Preamplifiers antilog amplifier "Microphone Preamplifiers" "PNP Transistor array" pnp 8 transistor array pin configuration NPN transistor 2N3904 npn-pnp-transistors 2N3904
    Text: Quad Low-Noise NPN / PNP Transistor Array T H AT Corporation THAT140 FEATURES APPLICATIONS • Two Matched NPN Transistors Two Matched PNP Transistors · Microphone Preamplifiers · · Tape Head Preamplifiers Monolithic Construction · · Current Sources Low Noise


    Original     		PDF THAT140 THAT140 2N3906 PNP bipolar junction transistor ST 2n3904 TRANSISTOR PNP Microphone Preamplifiers antilog amplifier "Microphone Preamplifiers" "PNP Transistor array" pnp 8 transistor array pin configuration NPN transistor 2N3904 npn-pnp-transistors 2N3904

    NSB1706DMW5T1G

    Abstract: No abstract text available
    Text: NSB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSB1706DMW5T1G NSB1706DMW5T1G, SC-88A NSB1706DMW5T1/D NSB1706DMW5T1G

    Untitled

    Abstract: No abstract text available
    Text: NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSB1706DMW5T1G, NSVB1706DMW5T1G SC-88A NSB1706DMW5T1/D

    Untitled

    Abstract: No abstract text available
    Text: NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSB1706DMW5T1G, NSVB1706DMW5T1G NSB1706DMW5T1/D

    CA3046 equivalent

    Abstract: AN5296 Harris CA3018 CA3045
    Text: CA3045, CA3046 Semiconductor September 1998 General Purpose NPN Transistor Arrays Features The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to


    Original     		PDF CA3045, CA3046 CA3045 CA3046 500MHz CA3046 equivalent AN5296 Harris CA3018

    NSB1011XV6T5

    Abstract: No abstract text available
    Text: NSB1011XV6T5 Preferred Device Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSB1011XV6T5 NSB1011XV6T5, OT-563 NSB1011XV6T4/D NSB1011XV6T5

    Untitled

    Abstract: No abstract text available
    Text: NSB1011XV6T5 Preferred Device Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSB1011XV6T5 NSB1011XV6T5, NSB1011XV6T4/D

    NSB1706DMW5T1

    Abstract: transistor marking code 325
    Text: NSB1706DMW5T1 Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSB1706DMW5T1 NSB1706DMW5T1, SC-88A NSB1706DMW5T1/D NSB1706DMW5T1 transistor marking code 325

    marking u6

    Abstract: No abstract text available
    Text: NSB1706DMW5T1 Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSB1706DMW5T1 NSB1706DMW5T1, SC-88A NSB1706DMW5T1/D marking u6

    marking 88A

    Abstract: marking code 88A NSB1706DMW5T1 NSB1706DMW5T1G NSB1706 u6 transistor 88a marking
    Text: NSB1706DMW5T1 Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSB1706DMW5T1 NSB1706DMW5T1, SC-88A NSB1706DMW5T1/D marking 88A marking code 88A NSB1706DMW5T1 NSB1706DMW5T1G NSB1706 u6 transistor 88a marking

    Untitled

    Abstract: No abstract text available
    Text: NSB1706DMW5T1 Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSB1706DMW5T1 NSB1706DMW5T1, SC-88A NSB1706DMW5T1/D

    MUN5211DW1T1

    Abstract: MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5237DW1T1
    Text: MUN5211DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF MUN5211DW1T1 r14525 MUN5211DW1T1/D MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5237DW1T1

    THEREMIN

    Abstract: NSBC113EDXV6T1 NSBC114TDXV6T1 NSBC114EDXV6T1 NSBC114EDXV6T5 NSBC114YDXV6T1 NSBC123EDXV6T1 NSBC124EDXV6T1 NSBC143TDXV6T1 NSBC144EDXV6T1
    Text: NSBC114EDXV6T1, NSBC114EDXV6T5 Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSBC114EDXV6T1, NSBC114EDXV6T5 NSBC114EDXV6T1 OT-563 NSBC114EDXV6/D THEREMIN NSBC113EDXV6T1 NSBC114TDXV6T1 NSBC114EDXV6T1 NSBC114EDXV6T5 NSBC114YDXV6T1 NSBC123EDXV6T1 NSBC124EDXV6T1 NSBC143TDXV6T1 NSBC144EDXV6T1

    MUN5233DW1T1G

    Abstract: MUN5214DW1T1G mun5215dw1t1g MUN5211DW1T1G MUN5212DW1T1G MUN5213DW1T1G MUN5216DW1T1G MUN5230DW1T1G MUN5231DW1T1G SOT363 MARKING CODE 7N
    Text: MUN5211DW1T1G Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF MUN5211DW1T1G MUN5211DW1T1G OT-363 MUN5211DW1T1/D MUN5233DW1T1G MUN5214DW1T1G mun5215dw1t1g MUN5212DW1T1G MUN5213DW1T1G MUN5216DW1T1G MUN5230DW1T1G MUN5231DW1T1G SOT363 MARKING CODE 7N

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF LMUN5211D LMUN5211DW1T1 LMUN5211LT1-9/12

    CA3046 equivalent

    Abstract: CA3046 CA3045 AN5296 Application of the CA3018 "Application of the CA3018" d143 T transistor "an5296 Application of the CA3018" Harris CA3046
    Text: & CA3045, CA3046 «AR General Purpose NPN Transistor Arrays November 1996 Features Description • Two Matched Transistors The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to


    OCR Scan     		PDF CA3045, CA3046 CA3045 CA3046 CA3046 equivalent AN5296 Application of the CA3018 "Application of the CA3018" d143 T transistor "an5296 Application of the CA3018" Harris CA3046

    be5l

    Abstract: AN5296 Application of the CA3018 CA3046 CA3045 CA3046 equivalent Harris CA3018 CA3045/3
    Text: CA3045, CA3046 Semiconductor September 1998 General Purpose NPN Transistor Arrays File Number 341.4 Features • Two Matched Transistors The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to


    OCR Scan     		PDF CA3045, CA3046 CA3045 CA3046 be5l AN5296 Application of the CA3018 CA3046 equivalent Harris CA3018 CA3045/3

    d143 T transistor

    Abstract: CA3046 CA3045 AN5296 Application of the CA3018 AN5296 Application note CA3018 "an5296 Application of the CA3018" CA3046 NPN an5296 differential pair transistor matched transistors
    Text: 33 HA« CA3045, CA3046 General Purpose NPN Transistor Arrays November 1996 Features Description • TWo Matched Transistors The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to


    OCR Scan     		PDF CA3045, CA3046 CA3045 CA3046 AN5296 CA3018 CA3045F d143 T transistor AN5296 Application of the CA3018 AN5296 Application note CA3018 "an5296 Application of the CA3018" CA3046 NPN an5296 differential pair transistor matched transistors