NPN TRIPLE DIFFUSED TRANSISTOR 500V 8A Search Results

Contextual Info: Ordering number:ENN1546B NPN Triple Diffused Planar Silicon Transistor 2SC3448 500V/4A Switching Regulator Applications Applications Package Dimensions • Switching regulator. unit:mm 2022A Features [2SC3448] · High breakdown voltage and high reliability.

2sc3088

Contextual Info: Ordering number:ENN1017B NPN Triple Diffused Planar Silicon Transistor 2SC3088 500V/4A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3088] 15.6

2SC3088

Abstract: ITR05333 ITR05334 ITR05335 ITR05336 ITR05337 npn triple diffused transistor 500v 8a
Contextual Info: Ordering number:EN1017B NPN Triple Diffused Planar Silicon Transistor 2SC3088 500V/4A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3088] 15.6 14.0

IR502

Contextual Info: Ordering number: EN 1012A NO.1012A ¡I _ 2SC3089 NPN Triple Diffused Planar Silicon Transistor SA iYO 500V/7A Switching Regulator Applications Features . High breakdown voltage VQBQ^800V . Fast switching speed. . Wide ¿SO. Absolute MaxiBua Ratings at Ta=25

ITR07019

Abstract: 2SC4457 ITR07017 ITR07018 ITR07020 vbe 10v, vce 500v NPN Transistor
Contextual Info: Ordering number:ENN3328 NPN Triple Diffused Planar Silicon Transistor 2SC4457 500V/4A Switching Regulator Applications Package Dimensions unit:mm 2039D [2SC4457] 16.0 3.4 5.6 22.0 5.0 8.0 3.1 2.0 21.0 • High breakdown voltage, high reliability. · High-speed switching.

3330 transistor

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5090 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN • High Collector-Base Voltage ( V C b o = 1 500V) • High Speed Switching (tf = 0.1 uS) ABSOLUTE MAXIMUM RATINGS Symbol Characteristic

Contextual Info: Ordering number: EN 938B 2SC3042 i SANYO NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator Applications Features . High breakdown voltage VCBQ=500V . Fast switching speed. . Wide ASO. Absolute Maxiaua Ratings at Ta=25°C Collector-to-Base Voltage

938B

Abstract: 2SC3042 2SC304 N0938
Contextual Info: Ordering number: EN 938B SÆVVO 1 f _ 2SC3042 N0.938B NPN Triple Diffused Planar Silicon Transistor F o r Sw i t c h i n g Re g u l a t o r s Features . High breakdown voltage VCBQ=500V . Fast switching speed. . Wide ASO. Absolute Maximum Ratings at Ta=25°C

2SC3040

Abstract: 777T
Contextual Info: Ordering number: EN 997B I SAIÌYO i 2SC3040 N0.997B NPN Triple Diffused Planar Silicon Transistor F or S w i t c h i n g Re g u l a t o r s Features . High breakdown voltage VQgQ^500V . Fast switching speed. . Wide ASO. Absolute Maximum Ratings at Ta=25°C

500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Contextual Info: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,

LCD TV SMPS circuit

Abstract: MOSFET 200v 20A n.channel CY63413 laptop lcd inverter Power line load switch for portable dvd china NC7SV158 automatic WATER LEVEL pump CONTROL mosfet triggering circuit for inverter list of P channel power mosfet FQPF18N50
Contextual Info: Fairchild New Product Highlights Bottomless SO-8-packaged MOSFETs 20V to 200V 1 • New Product Highlights Discrete Comprehensive New Product List Analog • r t , Normalized Effective Transient

vbe 10v, vce 500v NPN Transistor

Abstract: 2SC4298 npn triple diffused transistor 500v 8a
Contextual Info: 2SC4298 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 80(Tc=25°C)

npn high voltage transistor 500v 8a

Abstract: 2SC4139 si50
Contextual Info: 2SC4139 Application : Switching Regulator and General Purpose µA V IEBO VEB=10V 100max µA V 10 V V BR CEO IC=25mA 400min 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj

2SC4139

Abstract: npn triple diffused transistor 500v 8a
Contextual Info: 2SC4139 Application : Switching Regulator and General Purpose µA V IEBO VEB=10V 100max µA V 10 V V BR CEO IC=25mA 400min 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj

2SC4434

Abstract: npn triple diffused transistor 500v 8a npn high voltage transistor 500v 8a
Contextual Info: 2SC4434 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA VCEO 400 V IEBO VEB=10V 100max µA VEBO 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 25 5 A VCE(sat) IC=8A, IB=1.6A

600V igbt dc to dc buck converter

Abstract: diode 8a 600v FAN4803 24v output power supply 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FQPF10N60C equivalent circuit diagram of mosfet based smps power supply FQP9N50C FDS4935 equivalent
Contextual Info: Highly Integrated Off-Line Power Switch 1 The FS6X1220RT Fairchild Power Switch FPS is a highly integrated offline power switch for DC/DC forward or fly-back power supply applications. This device integrates a fully avalanche-rated SenseFET (200V minimum

Contextual Info: SEME BUL55B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85

npn triple diffused transistor 500v 8a

Abstract: BUL55B
Contextual Info: SEME BUL55B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85

2SC3040

Contextual Info: Ordering number: EN 997B _ 2SC3040 NPN Triple Diffused Planar Silicon Transistor 400V/8A Switching Regulator Applications Features . High breakdown voltage VCB0£500V . Fast switching speed. . Wide ASO. Absolute M a x i m a Ratings at T a = 2 5C

BUL65B

Abstract: npn triple diffused transistor 500v 8a
Contextual Info: SEME BUL65B LAB MECHANICAL DATA Dimensions in mm 2.18 0.086 2.44 (0.096) 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) 0.84 (0.033) 0.94 (0.037) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 1.09 (0.043) 1.30 (0.051)

Contextual Info: SEME BUL65B LAB MECHANICAL DATA Dimensions in mm 2.18 0.086 2.44 (0.096) 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) 0.84 (0.033) 0.94 (0.037) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 1.09 (0.043) 1.30 (0.051)

Contextual Info: SANKEN ELECTRIC CO LT» SSE D • ISAKJ 7 ^ 0 7 4 1 DDD1DD1 S7S Silicon NPN Triple Diffused Planar 2SC4434 -r -3 s - n ☆High Speed Switching Transistor Application Example: Audio, Lighting Inverter, and General Purpose »Outline Drawing 2 .M T -10 0 T 03 P

transistor A6A

Abstract: TRANSISTOR 2SC 733 transistor A6A 5 v733 16VBE AC42C 2SC1893
Contextual Info: 1893 2SC SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR Uni t in mm o * ? - y i' UTk^mtim ÿg&OMAX, Color TV Horizontal Output Applications o • iiEtti • teíD*ff^íS^ ; 21.0MAX. 3 v0BO= 1 5 0 0 V + ao9 v CE Bat = aov (Max.) (I0 =3 A , IH risigli ; X -i y

2SC3040

Contextual Info: Ordering number:EN997B NPN Triple Diffused Planar Silicon Transistor 2SC3040 400V/8A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥500V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3040] 1 : Base