Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4466 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4466 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the
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2SC4466
2SC4466
2SC4466L-x-T3P-T
2SC4466G-x-T3P-T
QW-R214-019
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2SC4478
Abstract: EN2977
Text: Ordering number : EN 2977 Ordering number:EN2977 NPN Triple Diffused Planar Silicon Transistor 2SC4478 NPN Triple Diffused Planar Silicon Transistor High-Definition CRT Display High-Definition CRT Display Horizontal Deflection Output Applications Horizontal Deflection Output
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EN2977
2SC4478
2SC4478]
O-220ML
2SC4478
EN2977
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD KTD863 Preliminary NPN EPITAXIAL SILICON TRANSISTOR TRIPLE DIFFUSED NPN TRANSISTOR DESCRIPTION The UTC KTD863 is a triple diffused NPN transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage and high collector current
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KTD863
KTD863
KTD863L-x-T9N-B
KTD863G-x-T9N-B
KTD863L-x-T9N-K
KTD863G-x-T9N-K
O-92NL
QW-R211-020
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4467 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-base
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2SC4467
2SC4467
2SC4467L-x-T3P-T
2SC4467G-x-T3P-T
2SC4467L-x-T3N-T
2SC4467G-x-T3N-T
QW-R214-018
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FJE5304D
Abstract: No abstract text available
Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application
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FJE5304D
FJE5304D
O-126
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transistor 12v 1A NPN
Abstract: fje5
Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application
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FJE5304D
FJE5304D
O-126
transistor 12v 1A NPN
fje5
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j5304d
Abstract: j5304 transistor j5304d FJE5304DTU NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o
Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application
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FJE5304D
FJE5304D
O-126
FJE5304DTU
j5304d
j5304
transistor j5304d
NPN transistor Electronic ballast
NPN J5304D
to-126 npn switching transistor 400v
free transistor and ic equivalent data o
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Switching Regulators
Abstract: EN1013C
Text: Ordering number : EN1013C NPN Triple Diffused Planar Silicon Transistor 2SC3090 For Switching Regulators
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EN1013C
2SC3090
Switching Regulators
EN1013C
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utc4124
Abstract: NPN Transistor 1.5A 400V NPN Transistor 1A 400V
Text: UTC 4124 NPN TRIPLE DIFFUSED SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4124 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed
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110VAC
O-126
4124L
QW-R204-019
utc4124
NPN Transistor 1.5A 400V
NPN Transistor 1A 400V
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2N3440
Abstract: j350 TRANSISTOR 2N3439 transistor 2N 3440 J350 transistor 3440 2N 3440 3439 1010J
Text: 2N3439 2N3440 NPN SILICON TRANSISTORS TRIPLE DIFFUSED MESA. TRANSISTORS SILICIUM, NPN MESA TRIPLE •DIFFUSES. - High voltage, high frequency response transistor Transistor haute tension à fréquence d'amplification élevée - High voltage, low current, switching applications
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2n3439
2N3440
j350 TRANSISTOR
2N3439
transistor 2N 3440
J350
transistor 3440
2N 3440
3439
1010J
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BUX45
Abstract: transistor et 460
Text: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection
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CB-19
BUX45
transistor et 460
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transistor BUX
Abstract: BUX14 TR07
Text: *B U X 14 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN, TRIPLE DIFFUSE % Preferred device D is p o s itif recom m andé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension Thermal fatigue inspection
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BUX14
CB-19
transistor BUX
BUX14
TR07
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2N3584
Abstract: 2n4240 2n 6021 SCHEMA 2N3583 3584 TCA 321 2n3585 3583
Text: 2N 3584 ,* 2 N 358b 5^2I\I 3585 ^ 2 N 4240 NPN SILICON TRANSISTORS, TRIPLE DIFFUSED MESA * TRANSISTORS NPN SILICIUM, MESA TRIPLE DIFFUSES ^Preferred device Dispositif recommandé - High voltage linear power am plifier Amplification linéaire de puissance forte tension
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CB-72
2N3584
2n4240
2n 6021
SCHEMA
2N3583
3584
TCA 321
2n3585
3583
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97CC
Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18
Text: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection
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CB-19
97CC
transistor ESM 16
transistor ESM 30
ESM18
transistor ESM 18
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2SC3249
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3249 FOR SMALL TYPE COLOUR TV CHROMA OUTPUT APPLICATION SILICON NPN TRIPLE DIFFUSED TYPE DESCRIPTION Mitsubishi 2SC3249 is a silicon NPN triple diffused transistor designed for OUTLINE DRAWING 5.1 MAX colour TV chroma output circuit, high voltage,switching circuit application.
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2SC3249
2SC3249
80MHz
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MJ7160
Abstract: TRANSISTOR BC 415 transistor bc 325 AN-415 MJ7161 ims 200
Text: MJ7160 SILICON MJ7I61 HIGH-POWER/HIGH-VOLT AGE TRIPLE DIFFUSED NPN SILICON ANNULAR TRANSISTORS 8.0 AMPERE TRIPLE DIFFUSED POWER TRANSISTORS NPN SILICON . . . designed fo r high-frequency, line-operated switching applications. 3 0 0 -4 0 0 V O L T S 140 W A T T S
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MJ7160
MJ7I61
MJ7160
MJ7161
MJ7160,
MJ7161
TRANSISTOR BC 415
transistor bc 325
AN-415
ims 200
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BUX20
Abstract: bux 716 transistor BUX
Text: *B U X 2 0 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN. TRIPLE DIFFUSE Preferred device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant Thermal fatigue inspection
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BUX20
CB-159
BUX20
bux 716
transistor BUX
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2SD1166
Abstract: darlington NPN 600V 8a
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1166 HIGH POWER SWITCHING APPLICATION. AC & MOTOR CONTROL APPLICATION. INVERTER APPLICATION. FEATURES: . High Voltage : VcE SUS >900V . Triple Diffused Design . Darlington Design MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
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2SD1166
S300//S,
1000kg
AR51A
2SD1166
darlington NPN 600V 8a
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2SA223
Abstract: 2SA201 2SA265
Text: -C o LIST OF DISCONTINUED TRANSISTORS Note: In this list n o distinction is m ade between PN Pand NPN. IX EMEt Epitaxial mesa type S: Silicon TME: Triple diffused mesa type G: Germanium AL: Alloy ju n ctio n type TD: Triple diffused type TDP: Triple diffused planar
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ST100Q22
Abstract: ST100Q
Text: ST100Q22 SILICON NPN TRIPLE DIFFUSED MESA TYPE TENTATIVE DATA INDUSTRIAL APPLICATION Unit in mm HIGH POWER SWITCHING. DC-AC POWER INVERTER. MOTOR CONTROL APPLICATION. FEATURES : . High Voltage : VCEX SUS >1200V . Triple Diffused Design . Darlington Design
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ST100Q22
2-60B1A
500kg
ST100Q22
ST100Q
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S2877
Abstract: S2877A
Text: S2877A SILICON NPN TRIPLE DIFFUSED MESA TYPE TENTATIVE DATA INDUSTRIAL APPLICATION _ Unit in mm HIGH POWER SWITCHING APPLICATION. DC-AC POWER INVERTER APPLICATION. MOTOR CONTROL APPLICATION. . High Voltage : V c e SUS > 450V . Triple Diffused Design.
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S2877A
Rat54
S2877
S2877A
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transistor ESM 30
Abstract: transistor ESM transistor h21e 752 transistor IC 282 ft950
Text: ESM 282 NPN SILICON TRANSISTOR, PLANAR TRIPLE DIFFUSED TRANSISTOR NPN S ILIC IU M , PLAN A R TRIPLE DIFFUSE PR ELIM INARY DATA NOTICE P R E LIM IN A IR E The ESM 282 is an high frequency X-55 plastic package transistor, intended for mixer and os cillator stage in T V VH F tuners.
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CB-76
100MA
-C12e
transistor ESM 30
transistor ESM
transistor h21e
752 transistor
IC 282
ft950
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TCA 875
Abstract: BUY72
Text: BUY 55, BUY 56, BUY 72 NPN Triple-diffused silicon power transistors BUY 55, BUY 56 and BUY 72 are triple-diffused NPN silicon power transistors in the case 3 A 2 DIN 41 872 TO-3 . The collector is electrically connected to the case. The transistors are designed for general switching applications at higher outputs.
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Q62702-
Q62901
B11-A
Q62901-
TCA 875
BUY72
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deflexion
Abstract: B0158 bd157 BD NPN transistors BD 157
Text: BD 157 BD158 BD 159 NPN SILICON TRANSISTORS, TRIPLE DIFFUSED MESA TRANSISTORS S ILIC IU M NPN, MESA TRIPLE DIFFUSES PR E LIM IN A R Y DATA N O TIC E P R E LIM IN A IR E BD 157 to BD 159 transistors are designed for class A audio output stages in main operated
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B0158
deflexion
bd157
BD NPN transistors
BD 157
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