NPN TRIPLE DIFFUSED Search Results

NPN TRIPLE DIFFUSED Result Highlights (5)

Part	Manufacturer	Description
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini

NPN TRIPLE DIFFUSED Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4466 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR  DESCRIPTION The UTC 2SC4466 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the	Original	2SC4466 2SC4466 2SC4466L-x-T3P-T 2SC4466G-x-T3P-T QW-R214-019	PDF
2SC4478 Abstract: EN2977 Contextual Info: Ordering number : EN 2977 Ordering number:EN2977 NPN Triple Diffused Planar Silicon Transistor 2SC4478 NPN Triple Diffused Planar Silicon Transistor High-Definition CRT Display High-Definition CRT Display Horizontal Deflection Output Applications Horizontal Deflection Output	Original	EN2977 2SC4478 2SC4478] O-220ML 2SC4478 EN2977	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD KTD863 Preliminary NPN EPITAXIAL SILICON TRANSISTOR TRIPLE DIFFUSED NPN TRANSISTOR  DESCRIPTION The UTC KTD863 is a triple diffused NPN transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage and high collector current	Original	KTD863 KTD863 KTD863L-x-T9N-B KTD863G-x-T9N-B KTD863L-x-T9N-K KTD863G-x-T9N-K O-92NL QW-R211-020	PDF
2N3440 Abstract: j350 TRANSISTOR 2N3439 transistor 2N 3440 J350 transistor 3440 2N 3440 3439 1010J Contextual Info: 2N3439 2N3440 NPN SILICON TRANSISTORS TRIPLE DIFFUSED MESA. TRANSISTORS SILICIUM, NPN MESA TRIPLE •DIFFUSES. - High voltage, high frequency response transistor Transistor haute tension à fréquence d'amplification élevée - High voltage, low current, switching applications	OCR Scan	2n3439 2N3440 j350 TRANSISTOR 2N3439 transistor 2N 3440 J350 transistor 3440 2N 3440 3439 1010J	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR  DESCRIPTION The UTC 2SC4467 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-base	Original	2SC4467 2SC4467 2SC4467L-x-T3P-T 2SC4467G-x-T3P-T 2SC4467L-x-T3N-T 2SC4467G-x-T3N-T QW-R214-018	PDF
FJE5304D Contextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application	Original	FJE5304D FJE5304D O-126	PDF
transistor 12v 1A NPN Abstract: fje5 Contextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application	Original	FJE5304D FJE5304D O-126 transistor 12v 1A NPN fje5	PDF
j5304d Abstract: j5304 transistor j5304d FJE5304DTU NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o Contextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application	Original	FJE5304D FJE5304D O-126 FJE5304DTU j5304d j5304 transistor j5304d NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o	PDF
BUX45 Abstract: transistor et 460 Contextual Info: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection	OCR Scan	CB-19 BUX45 transistor et 460	PDF
transistor BUX Abstract: BUX14 TR07 Contextual Info: *B U X 14 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN, TRIPLE DIFFUSE % Preferred device D is p o s itif recom m andé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension Thermal fatigue inspection	OCR Scan	BUX14 CB-19 transistor BUX BUX14 TR07	PDF
2N3584 Abstract: 2n4240 2n 6021 SCHEMA 2N3583 3584 TCA 321 2n3585 3583 Contextual Info: 2N 3584 ,* 2 N 358b 5^2I\I 3585 ^ 2 N 4240 NPN SILICON TRANSISTORS, TRIPLE DIFFUSED MESA * TRANSISTORS NPN SILICIUM, MESA TRIPLE DIFFUSES ^Preferred device Dispositif recommandé - High voltage linear power am plifier Amplification linéaire de puissance forte tension	OCR Scan	CB-72 2N3584 2n4240 2n 6021 SCHEMA 2N3583 3584 TCA 321 2n3585 3583	PDF
97CC Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18 Contextual Info: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection	OCR Scan	CB-19 97CC transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18	PDF
TCA 785 Abstract: transistor BUX 48 vu bux BUX41 sonde de temperature Contextual Info: *BUX 41N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE îfc Preferred device D isp o sitif recom m andé High speed, high current, high power transistor Transistor de puissance rapide, fo r t courant Thermal fatigue inspection	OCR Scan	CB-19 TCA 785 transistor BUX 48 vu bux BUX41 sonde de temperature	PDF
Switching Regulators Abstract: EN1013C Contextual Info: Ordering number : EN1013C NPN Triple Diffused Planar Silicon Transistor 2SC3090 For Switching Regulators	Original	EN1013C 2SC3090 Switching Regulators EN1013C	PDF

MJ7160 Abstract: TRANSISTOR BC 415 transistor bc 325 AN-415 MJ7161 ims 200 Contextual Info: MJ7160 SILICON MJ7I61 HIGH-POWER/HIGH-VOLT AGE TRIPLE DIFFUSED NPN SILICON ANNULAR TRANSISTORS 8.0 AMPERE TRIPLE DIFFUSED POWER TRANSISTORS NPN SILICON . . . designed fo r high-frequency, line-operated switching applications. 3 0 0 -4 0 0 V O L T S 140 W A T T S	OCR Scan	MJ7160 MJ7I61 MJ7160 MJ7161 MJ7160, MJ7161 TRANSISTOR BC 415 transistor bc 325 AN-415 ims 200	PDF
BUX20 Abstract: bux 716 transistor BUX Contextual Info: *B U X 2 0 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN. TRIPLE DIFFUSE Preferred device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant Thermal fatigue inspection	OCR Scan	BUX20 CB-159 BUX20 bux 716 transistor BUX	PDF
utc4124 Abstract: NPN Transistor 1.5A 400V NPN Transistor 1A 400V Contextual Info: UTC 4124 NPN TRIPLE DIFFUSED SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4124 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed	Original	110VAC O-126 4124L QW-R204-019 utc4124 NPN Transistor 1.5A 400V NPN Transistor 1A 400V	PDF
2SD1166 Abstract: darlington NPN 600V 8a Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1166 HIGH POWER SWITCHING APPLICATION. AC & MOTOR CONTROL APPLICATION. INVERTER APPLICATION. FEATURES: . High Voltage : VcE SUS >900V . Triple Diffused Design . Darlington Design MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC	OCR Scan	2SD1166 S300//S, 1000kg AR51A 2SD1166 darlington NPN 600V 8a	PDF
2SA223 Abstract: 2SA201 2SA265 Contextual Info: -C o LIST OF DISCONTINUED TRANSISTORS Note: In this list n o distinction is m ade between PN Pand NPN. IX EMEt Epitaxial mesa type S: Silicon TME: Triple diffused mesa type G: Germanium AL: Alloy ju n ctio n type TD: Triple diffused type TDP: Triple diffused planar	OCR Scan		PDF
ST100Q22 Abstract: ST100Q Contextual Info: ST100Q22 SILICON NPN TRIPLE DIFFUSED MESA TYPE TENTATIVE DATA INDUSTRIAL APPLICATION Unit in mm HIGH POWER SWITCHING. DC-AC POWER INVERTER. MOTOR CONTROL APPLICATION. FEATURES : . High Voltage : VCEX SUS >1200V . Triple Diffused Design . Darlington Design	OCR Scan	ST100Q22 2-60B1A 500kg ST100Q22 ST100Q	PDF
S2877 Abstract: S2877A Contextual Info: S2877A SILICON NPN TRIPLE DIFFUSED MESA TYPE TENTATIVE DATA INDUSTRIAL APPLICATION _ Unit in mm HIGH POWER SWITCHING APPLICATION. DC-AC POWER INVERTER APPLICATION. MOTOR CONTROL APPLICATION. . High Voltage : V c e SUS > 450V . Triple Diffused Design.	OCR Scan	S2877A Rat54 S2877 S2877A	PDF
transistor ESM 30 Abstract: transistor ESM transistor h21e 752 transistor IC 282 ft950 Contextual Info: ESM 282 NPN SILICON TRANSISTOR, PLANAR TRIPLE DIFFUSED TRANSISTOR NPN S ILIC IU M , PLAN A R TRIPLE DIFFUSE PR ELIM INARY DATA NOTICE P R E LIM IN A IR E The ESM 282 is an high frequency X-55 plastic package transistor, intended for mixer and os cillator stage in T V VH F tuners.	OCR Scan	CB-76 100MA -C12e transistor ESM 30 transistor ESM transistor h21e 752 transistor IC 282 ft950	PDF
TCA 875 Abstract: BUY72 Contextual Info: BUY 55, BUY 56, BUY 72 NPN Triple-diffused silicon power transistors BUY 55, BUY 56 and BUY 72 are triple-diffused NPN silicon power transistors in the case 3 A 2 DIN 41 872 TO-3 . The collector is electrically connected to the case. The transistors are designed for general switching applications at higher outputs.	OCR Scan	Q62702- Q62901 B11-A Q62901- TCA 875 BUY72	PDF
deflexion Abstract: B0158 bd157 BD NPN transistors BD 157 Contextual Info: BD 157 BD158 BD 159 NPN SILICON TRANSISTORS, TRIPLE DIFFUSED MESA TRANSISTORS S ILIC IU M NPN, MESA TRIPLE DIFFUSES PR E LIM IN A R Y DATA N O TIC E P R E LIM IN A IR E BD 157 to BD 159 transistors are designed for class A audio output stages in main operated	OCR Scan	B0158 deflexion bd157 BD NPN transistors BD 157	PDF

NPN TRIPLE DIFFUSED Search Results

NPN TRIPLE DIFFUSED Result Highlights (5)

NPN TRIPLE DIFFUSED Datasheets Context Search

2SC4478

2N3440

FJE5304D

transistor 12v 1A NPN

j5304d

BUX45

transistor BUX

2N3584

97CC

TCA 785

Switching Regulators

MJ7160

BUX20

utc4124

2SD1166

2SA223

ST100Q22

S2877

transistor ESM 30

TCA 875

deflexion