NPN TRANSISTORS 700V 1A Search Results

NPN TRANSISTORS 700V 1A Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

NPN TRANSISTORS 700V 1A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
743 ic Abstract: JE13009 MJE13009 IC 741 AMP Text: MJE13009 NPN POWER TRANSISTORS 400 VOLTS 12 AMP, 100 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. NPN COLLECTOR Features: • VCEO sus - 400V (Min). • VCEV = 700V blocking capability	OCR Scan	MJE13009 T0-220-AB MJE13009 743 ic JE13009 IC 741 AMP	PDF
TI3007 Abstract: UMT13007 UMT1300S 100C 100-C UMT13006 Text: UMT13006 UMT13007 POWER TRANSISTORS 8A, 700V, Fast Switching, Silicon NPN Mesa FEATURES DE S C R IP T IO N • • • • • • These high voltage glass passivated power transistors, in a plastic TO 220AB package, combine fast switching, low saturation	OCR Scan	UMT13006 TI3007 220AB UMT1300S UMT13007 TI3007 UMT13007 100C 100-C	PDF
e13005 2 Abstract: E13005 MJE1300 E13005 -2 transistor E13005 E13005 D e13005- 2 transistors mje13005 npn transistors 700V 1A UJ05 Text: MJE13005 NPN POWER TRANSISTORS 400 VOLTS 4 AMP, 75 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. Features: • V C E O su s = 400V (Min). • VcEV = 700V blocking capability CASE STYLE T0-220AB	OCR Scan	MJE13005 T0-220AB U-J05 JE1300! E13005- e13005 2 E13005 MJE1300 E13005 -2 transistor E13005 E13005 D e13005- 2 transistors mje13005 npn transistors 700V 1A UJ05	PDF
MJE13007 Abstract: v733 VCB 400V MJE13 U105 Text: MJE13007 NPN POWER TRANSISTORS 400 VOLTS 8 AMP, 80 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. Features: • VcEO sus = 400V (Min). • VCEV = 700V blocking capability C A S E S T Y L E T0-220AB	OCR Scan	MJE13007 T0-220AB ip26j T0-220-AB MJE13007 v733 VCB 400V MJE13 U105	PDF
Untitled Abstract: No abstract text available Text: HARR IS S E M I C O N D SECTOR 27E » • 4302271 0Q2QM?b Q * H A S Power T ra n sis to rs - MJE13009 File Number 15.92 T -3 3 - »3 High-Speed Silicon N-P-N	OCR Scan	MJE13009 JE13009 T-33-13	PDF
2n5157 Abstract: No abstract text available Text: SavantIC Semiconductor Product Specification 2N5157 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·Switching regulator ·Inverters ·Solenoid and relay drivers ·Motor controls PINNING See Fig.2 PIN	Original	2N5157 2n5157	PDF
2N5157 Abstract: No abstract text available Text: Product Specification www.jmnic.com 2N5157 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・Switching regulator ・Inverters ・Solenoid and relay drivers ・Motor controls PINNING See Fig.2 PIN DESCRIPTION	Original	2N5157 2N5157	PDF
MJE13005 Abstract: MJE13005 2 equivalent mje13005 transistors mje13005 npn transistors 700V 1A Text: SavantIC Semiconductor Product Specification MJE13005 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/	Original	MJE13005 O-220C MJE13005 MJE13005 2 equivalent mje13005 transistors mje13005 npn transistors 700V 1A	PDF
act30bht Abstract: 13003 transistor power supply circuits ACT30BHT-A 13003 MOSFET transistor ACT30AHT-A 13002 and 13003 power transistor act30b E 13003 TRANSISTOR npn transistors 400V low power to92 flyback 13003 Text: Datasheet Rev 2, 5/2005 ACT30 ACT30 HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family FEATURES GENERAL DESCRIPTION Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation	Original	ACT30 65kHz 100kHz ACT30 act30bht 13003 transistor power supply circuits ACT30BHT-A 13003 MOSFET transistor ACT30AHT-A 13002 and 13003 power transistor act30b E 13003 TRANSISTOR npn transistors 400V low power to92 flyback 13003	PDF
act30bht Abstract: 13003 transistor power supply circuits 13003 MOSFET transistor ACT30BHT-A ACT30AHT-A act30aht ACT30 flyback 13003 act30bh act30 application Text: Datasheet Rev 2, 5/2005 ACT30 ACT30 HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family FEATURES GENERAL DESCRIPTION Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation	Original	ACT30 65kHz 100kHz ACT30 man50 act30bht 13003 transistor power supply circuits 13003 MOSFET transistor ACT30BHT-A ACT30AHT-A act30aht flyback 13003 act30bh act30 application	PDF
mje13009l Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They	Original	MJE13009 MJE13009 QW-R214-011 mje13009l	PDF
mje13009 equivalent Abstract: 2N2222 SOA mje13009l MJE13009L-T3P-T QW-R214-011 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They	Original	MJE13009 MJE13009 MJE13009L QW-R214-011 mje13009 equivalent 2N2222 SOA mje13009l MJE13009L-T3P-T 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data	PDF
mje13009 equivalent Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They	Original	MJE13009 MJE13009 O-220F QW-R219-007 mje13009 equivalent	PDF
BUV48CFI Abstract: npn transistors 700V 1A tc2555 Text: SavantIC Semiconductor Product Specification BUV48CFI Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package. ·High voltage. ·Fast switching speed. APPLICATIONS ·Linear and switching industrial equipment. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to	Original	BUV48CFI BUV48CFI npn transistors 700V 1A tc2555	PDF

BUX48C Abstract: No abstract text available Text: SavantIC Semiconductor Product Specification BUX48C Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ·Fast switching speed APPLICATIONS ·Linear and switching industrial equipment. PINNING see fig.2 PIN DESCRIPTION 1 Base 2 Emitter	Original	BUX48C BUX48C	PDF
BUL6825 Abstract: npn transistors 700V 1A Text: SavantIC Semiconductor Product Specification BUL6825 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Relay drivers ·Inverters ·Switching regulators ·Deflection circuits PINNING PIN DESCRIPTION 1	Original	BUL6825 O-220C BUL6825 npn transistors 700V 1A	PDF
MJE13005 Abstract: mje130 npn transistors 700V 1A MJE-13005 equivalent mje13005 MJE13005 2 Text: Inchange Semiconductor Product Specification MJE13005 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed APPLICATIONS ・Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/	Original	MJE13005 O-220C MJE13005 mje130 npn transistors 700V 1A MJE-13005 equivalent mje13005 MJE13005 2	PDF
BUL128D Abstract: No abstract text available Text: Inchange Semiconductor Product Specification BUL128D Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High voltage ,high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost	Original	BUL128D O-220C BUL128D	PDF
Untitled Abstract: No abstract text available Text: Power T r a n s is t o r s - - M JE 1 3 0 0 7 HARRIS SEMICOND File N um ber SECTOR 2?E » B 4302271 D OS DMb b 15.90 6 MHAS T -S 5 - ' 3 H igh-Speed Silicon N-P-N	OCR Scan	MJE13007 t-33-13	PDF
BUX48C Abstract: No abstract text available Text: Inchange Semiconductor Product Specification BUX48C Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ・Fast switching speed APPLICATIONS ・Linear and switching industrial equipment. PINNING see fig.2 PIN DESCRIPTION 1 Base	Original	BUX48C BUX48C	PDF
STC13007 Abstract: npn transistors 700V 1A L1340 f259 Text: STC13007 !!!!!!!!! !!NPN POWER TRANSISTORS FEATURES HIGH SPEED SWITCHING HIGH VOLTAGE CAPABILITY WIDE SOA APPLICATION: FLUORESCENT LAMP ELECTRONIC BALLAST SWITCH POWER SUPPLY Absolute Maximum Ratings Tc=25qC TO-220 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage	Original	STC13007 O-220 STC13007 npn transistors 700V 1A L1340 f259	PDF
MJE13009L Abstract: mje13009 equivalent MJE13009-T3P-T 2n2905 time delay relay jc 5010 transistor 1N4933 MJE13009 MJE13009L-T3P-T MJE13009-TA3-T MJE13009-TF3-T Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 1 TO-3P DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are	Original	MJE13009 MJE13009 O-220 O-220F QW-R203-024 MJE13009L mje13009 equivalent MJE13009-T3P-T 2n2905 time delay relay jc 5010 transistor 1N4933 MJE13009L-T3P-T MJE13009-TA3-T MJE13009-TF3-T	PDF
npn transistors 400V 1A To92 Abstract: No abstract text available Text: 3DD13003B NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 1.25MAX 2.92 MIN power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Collector-Base Voltage VCBO VCEO Collector-Emitter Voltage	Original	3DD13003B 25MAX 100mA, npn transistors 400V 1A To92	PDF
EB 13005 Abstract: Transistors 13005 D MJE13004 Text: 7 ^ 5 ^ 5 3 7 0 0 5 ^ 1 0 5 1 13004 13005 • SGS-THOMSON ¡ILIOTa «! S G S-TH0MS0N MJE MJ E 3DE D HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon muitiepitaxial me sa NPN transistors in JedecTO -220 plastic package particularly intended for switch-mode applications.	OCR Scan	MJE13004/13005 MJE13004 MJE13005 MJE13004-MJE13005 T-33-73 EB 13005 Transistors 13005 D MJE13004	PDF

NPN TRANSISTORS 700V 1A Search Results

NPN TRANSISTORS 700V 1A Result Highlights (5)

NPN TRANSISTORS 700V 1A Datasheets Context Search

743 ic

TI3007

e13005 2

MJE13007

Untitled

2n5157

2N5157

MJE13005

act30bht

act30bht

mje13009l

mje13009 equivalent

mje13009 equivalent

BUV48CFI

BUX48C

BUL6825

MJE13005

BUL128D

Untitled

BUX48C

STC13007

MJE13009L

npn transistors 400V 1A To92

EB 13005