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    NPN TRANSISTOR VCEO 1000V Search Results

    NPN TRANSISTOR VCEO 1000V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR VCEO 1000V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor VCE 1000V

    Abstract: NPN Transistor VCEO 1000V 220v 2a transistor NPN Transistor 450v 1A IC 1A datasheet transistor 1000V transistor Ic 1A datasheet NPN SGSF313PI 1000v, NPN SGSF31
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor SGSF313PI DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed to be used as switch in high efficency off-line


    Original     		PDF SGSF313PI transistor VCE 1000V NPN Transistor VCEO 1000V 220v 2a transistor NPN Transistor 450v 1A IC 1A datasheet transistor 1000V transistor Ic 1A datasheet NPN SGSF313PI 1000v, NPN SGSF31

    NPN Transistor VCEO 1000V

    Abstract: 220v 2a transistor transistor VCE 1000V transistor Ic 1A datasheet NPN 250V transistor npn 2a 1000v, NPN IC 1A datasheet transistor 1000V SGSF313 transistor VCEO 1000V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor SGSF313 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed to be used as switch in high efficency off-line


    Original     		PDF SGSF313 NPN Transistor VCEO 1000V 220v 2a transistor transistor VCE 1000V transistor Ic 1A datasheet NPN 250V transistor npn 2a 1000v, NPN IC 1A datasheet transistor 1000V SGSF313 transistor VCEO 1000V

    npn 1000V 15A

    Abstract: NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW16010A DESCRIPTION •Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage: VCEO SUS = 500V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high-voltage, high-speed,power switching in


    Original     		PDF MJW16010A npn 1000V 15A NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V

    NPN Transistor VCEO 1000V

    Abstract: transistor 2sC3552 2SC3552
    Text: Silicon Epitaxial Planar Transistor 2SC3552 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose MT-100 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VF tf


    Original     		PDF 2SC3552 MT-100 NPN Transistor VCEO 1000V transistor 2sC3552 2SC3552

    BUT11AF

    Abstract: transistor VCBO 1000V IC 100mA 11AF BUT11F
    Text: Preliminary BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850


    Original     		PDF BUT11F/11AF O-220F BUT11F BUT11AF BUT11AF transistor VCBO 1000V IC 100mA 11AF BUT11F

    11AF

    Abstract: BUT11AF BUT11F
    Text: Preliminary BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850


    Original     		PDF BUT11F/11AF O-220F BUT11F BUT11AF 11AF BUT11AF BUT11F

    transistor VCE 1000V to220

    Abstract: No abstract text available
    Text: KSC5405 KSC5405 High Voltage Power Switch Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage


    Original     		PDF KSC5405 O-220 KSC5405TU O-220 transistor VCE 1000V to220

    Untitled

    Abstract: No abstract text available
    Text: , Dnc. J.£ii£U TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6754 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(SUS)= 500(Min.) • High Switching Speed


    Original     		PDF 2N6754

    11AF

    Abstract: BUT11AF BUT11F
    Text: BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850 1000 V V


    Original     		PDF BUT11F/11AF O-220F BUT11F BUT11AF 150ner 11AF BUT11AF BUT11F

    KSC5405

    Abstract: No abstract text available
    Text: KSC5405 KSC5405 High Voltage Power Switch Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage


    Original     		PDF KSC5405 O-220 KSC5405

    KSC5405

    Abstract: No abstract text available
    Text: KSC5405 KSC5405 High Voltage Power Switch Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage


    Original     		PDF KSC5405 O-220 KSC5405

    KSC5405F

    Abstract: No abstract text available
    Text: KSC5405F KSC5405F High Voltage Power Switching Applications TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage


    Original     		PDF KSC5405F O-220F KSC5405F

    BUT11AF

    Abstract: an7511 BUT11AFTU
    Text: BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850 1000 V V


    Original     		PDF BUT11F/11AF O-220F BUT11F BUT11AF BUT11AFTU O-220F an7511

    Untitled

    Abstract: No abstract text available
    Text: KSC5405F KSC5405F High Voltage Power Switching Applications TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage


    Original     		PDF KSC5405F O-220F KSC5405FTU O-220F

    Untitled

    Abstract: No abstract text available
    Text: BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850 1000 V V


    Original     		PDF BUT11F/11AF O-220F BUT11F BUT11AF

    BUT11

    Abstract: BUT-11
    Text: BUT11/11A BUT11/11A High Voltage Power Switching Applications 1 1.Base TO-220 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage


    Original     		PDF BUT11/11A O-220 BUT11 BUT11A BUT11 BUT-11

    MJW16010A

    Abstract: No abstract text available
    Text: J , U na. C/ TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 usA MJW16010A Silicon NPN Power Transistor DESCRIPTION • Low Collector Saturation Voltage • Collector-Emitter Sustaining Voltage: VCEO(SUS) = 500V(Min) Wide Area of Safe Operation


    Original     		PDF MJW16010A T100r MJW16010A

    BUT11A1

    Abstract: BUT-11 BUT11A CIRCUIT BUT11 BUT11A
    Text: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage


    Original     		PDF BUT11/11A O-220 BUT11 BUT11A BUT11A1 BUT-11 BUT11A CIRCUIT BUT11 BUT11A

    2SC2688

    Abstract: NPN Transistor VCEO 1000V 2SC2688L QW-R204-023 NPN SILICON TRANSISTOR
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR „ DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. „ FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF


    Original     		PDF 2SC2688 2SC2688 2300pF) 50MHz -10mA) 2SC2688L-x-T60-K 2SC2688G-x-T60-K O-126 QW-R204-023 NPN Transistor VCEO 1000V 2SC2688L NPN SILICON TRANSISTOR

    2SC2688

    Abstract: NPN Transistor VCEO 1000V TRANSISTOR 023
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR „ DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. „ FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF


    Original     		PDF 2SC2688 2SC2688 2300pF) 50MHz -10mA) 2SC2688L-x-T60-K 2SC2688G-x-T60-K 2SC2688L-x-T6C-K 2SC2688G-x-T6C-K O-126 NPN Transistor VCEO 1000V TRANSISTOR 023

    NTE2311

    Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
    Text: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V


    Original     		PDF NTE2311 NTE2311 npn 1000V 15A NPN Transistor VCEO 1000V

    2sc2688

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SC2688 NPN SILICON TRANSISTOR N PN SI LI CON T RAN SI ST OR ̈ DESCRI PT I ON The UTC 2SC2688 is designed for use in Color TV chroma output circuits. ̈ FEAT U RES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF


    Original     		PDF 2SC2688 2SC2688 2300pF) 50MHz -10mA) 2SC2688L-x-T60-K 2SC2688G-x-T60-K 2SC2688L-x-T6C-K 2SC2688G-x-T6C-K O-126

    NPN 350W

    Abstract: powertech NPN Transistor VCEO 1000V CO111
    Text: "BIG IDEAS IN BIG POWER” PowerTech • 500 AMPERES L R -1 0 0 2 SILICON NPN TRANSISTOR ABSOLUTE MAXIMUM RATINGS LR-10Q2 SYMBOL Collector-Base Voltage VC 80 100V Collector-Emitter Voltage VCEO 80V Emitter-Base Voltage vebo 10V Peak Collector Current >CM*


    OCR Scan     		PDF LR-10Q2 -650C LPH-150 SYMBOL500 200ma NPN 350W powertech NPN Transistor VCEO 1000V CO111

    Untitled

    Abstract: No abstract text available
    Text: “BIG IDEAS IN big pow er” wmm m PowerTecn 500 AMPERES LR-1002 SILICON NPN TRANSISTOR ABSOLUTE MAXIMUM RATINGS LR-1002 SYMBOL Col lector-Base Voltage VCBO 100V Collector-Emitter Voltage VCEO Emitter-Base Voltage vebo 80 V 10V Peak Collector Current •c m *


    OCR Scan     		PDF LR-1002 -650C LPH-150 tC-100