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    NPN TRANSISTOR TO 92 C1815 Search Results

    NPN TRANSISTOR TO 92 C1815 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR TO 92 C1815 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c1815 gr

    Abstract: Transistor TO-92 C1815 transistor C1815 C1815 transistors c1815 C1815 TO92 c1815 transistor C1815 y br c1815 gr Transistor TO-92 C1815 gr
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Value Units Collector-Base Voltage


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    PDF C1815 100mA, 30MHz c1815 gr Transistor TO-92 C1815 transistor C1815 C1815 transistors c1815 C1815 TO92 c1815 transistor C1815 y br c1815 gr Transistor TO-92 C1815 gr

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage


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    PDF C1815

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current 0.15 A ICM: Collector-base voltage 60


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    PDF C1815 100mA, 30MHz

    C1815 NPN Transistor

    Abstract: C1815 TO92
    Text: TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current 0.15 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


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    PDF C1815 100mA, 30MHz C1815 NPN Transistor C1815 TO92

    C1815 GR

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Value Units Collector-Base Voltage


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    PDF C1815 100mA, 30MHz C1815 GR

    c1815 transistor

    Abstract: c1815 gr
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Value Units Collector-Base Voltage


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    PDF C1815 100mA, 30MHz c1815 transistor c1815 gr

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 TO—92 TRANSISTOR( NPN ) 1.EMITTER FEATURES 2.COLLECTOR Power dissipation PCM : 0.4 W(Tamb=25℃) Collector current ICM : 0.15 A Collector-base voltage V BR CBO : 60


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    PDF C1815 30MHz 270TYP 050TYP

    C1815 GR

    Abstract: c1815 transistor transistor C1815 c1815 C1815 y C1815 NPN Transistor OF C1815 GR C1815 bl transistor C1815 y npn TRANSISTOR c1815
    Text: C1815 Transistor NPN TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage


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    PDF C1815 100uA, 100mA, 30MHz C1815 GR c1815 transistor transistor C1815 c1815 C1815 y C1815 NPN Transistor OF C1815 GR C1815 bl transistor C1815 y npn TRANSISTOR c1815

    C1815T

    Abstract: No abstract text available
    Text: C1815T 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE  G Power Dissipation H CLASSIFICATION OF hFE 1 J Product-Rank C1815T-O C1815T-Y C1815T-GR


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    PDF C1815T C1815T-O C1815T-Y C1815T-GR 18-Mar-2010 100mA, 30MHz C1815T

    Untitled

    Abstract: No abstract text available
    Text: C1815T 400 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G Power Dissipation H J A Collector 2 D Millimeter Min. Max. 4.40 4.70 4.30 4.70


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    PDF C1815T 100mA, 31-Dec-2009

    C1815 GR

    Abstract: C1815 y transistor c1815 c1815 transistor OF C1815 GR C1815 transistor C1815 y C1815 bl C1815 equivalent C1815 GR IE
    Text: C1815 C1815 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 0.4 W (Tamb=25℃) 3. BASE Collector current ICM: 0.15 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


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    PDF C1815 100mA, 30MHz C1815 GR C1815 y transistor c1815 c1815 transistor OF C1815 GR C1815 transistor C1815 y C1815 bl C1815 equivalent C1815 GR IE

    c1815 gr h

    Abstract: C1815 GR transistor C1815 C1815 GR 7 J c1815 c1815 transistor C1815 GR 7 A C1815 y npn c1815 OF C1815 GR
    Text: C1815 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES Power dissipation o P CM :0.4 W (Tamb=25 C) Collector current I CM :0.15 A Collector-base voltage V (BR)CBO :60 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


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    PDF C1815 c1815 gr h C1815 GR transistor C1815 C1815 GR 7 J c1815 c1815 transistor C1815 GR 7 A C1815 y npn c1815 OF C1815 GR

    omron relay G2R-2 8 pin 12V DC

    Abstract: Tyco 3604 relay krp power source sps 6360 SRD 12VDC SL C data 8873 64 pin colour tv ic TTK SG 2368 transistor DK qe smd eaton T85 rotary Switch PH ON 823 m 8645 ic MB 16651 G
    Text: ND3% BASE1 XXXX5998-1631-1-P 1631 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 19-07-11 Hour: 08:29 TS:TS date TS time RELAYS, SOLENOIDS & CONTACTORS Go Online for Product Availability AUTOMOTIVE RELAYS DG34 SERIES AUTOMOTIVE INDUSTRIAL POWER RELAYS 60-80A AUTOMOTIVE RELAYS CONT.


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    PDF 277VAC, 30VDC 10VAC/DC 250VAC 10million 0-80A DG34-1021-36-1012-F 59PIARQ S18UUA S18UUAQ omron relay G2R-2 8 pin 12V DC Tyco 3604 relay krp power source sps 6360 SRD 12VDC SL C data 8873 64 pin colour tv ic TTK SG 2368 transistor DK qe smd eaton T85 rotary Switch PH ON 823 m 8645 ic MB 16651 G

    Transistor GR 1815

    Abstract: C 1815 transistor c1815 Transistor TO-92 C1815 1815 TRANSISTOR C1815 Y 5 l transistor NPN transistor 1815 NPN C1815 c1815 gr h c 1815
    Text: M CC TO-92 Plastic-Encapsulate Transistors C 1815 TRANSISTOR NPN FEATURES a cp Power dissipation TO-92 0.4W (Tamb=25°C) Pcm ; Collector current 1.EMITTER Ic m ; 2.COLLECTOR 0.15A Collector-base voltage V (B R )C B O : 60 V 3 . BASE Operating and storage junction temperature range


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    PDF C1815 Transistor GR 1815 C 1815 transistor c1815 Transistor TO-92 C1815 1815 TRANSISTOR C1815 Y 5 l transistor NPN transistor 1815 NPN C1815 c1815 gr h c 1815