NPN TRANSISTOR ISOLATED Search Results

CRT - COLOUR TV SCHEMATIC DIAGRAM

Abstract: CRT COLOUR TV SCHEMATIC DIAGRAM BU407FP bu407F
Contextual Info: BU407FP SILICON NPN TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR TV ■ DESCRIPTION The device is a silicon epitaxial planar NPN transistor in TO-220FP fully isolated package. It is a fast switching, high voltage device for use

2N4401 transistor

Abstract: 2N4401 NPN Switching Transistor CMLT4413 2N4401 2N4403 NPN, PNP for 500ma, 30v 2n4401 configuration 2N4403 surface mount
Contextual Info: Central CMLT4413 TM Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY NPN/PNP SILICON TRANSISTOR SOT-563 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT4413 consists of one isolated 2N4401 NPN silicon transistor and one complementary isolated 2N4403 PNP silicon transistor,

bfq136

Abstract: SOT122
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ136 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ136 PINNING NPN transistor in a four-lead

BFQ34

Abstract: bfq34 application note FP 801
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ34 PINNING NPN transistor encapsulated in a 4

BFQ34

Abstract: transistor marking N1 BFQ34/01,112
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ34 PINNING NPN transistor encapsulated in a 4

BFQ68 Applications

Abstract: BFQ68 FP 801 ZO 103 MA 75 724
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ68 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ68 PINNING NPN transistor mounted in a four-lead

INTERSIL AN5296

Abstract: C - 4834 transistor an5296 AN5296 Application of the CA3018 AN5296 application note "Application of the CA3018" AN5296 Application note CA3018 Application note CA3086 CA3086 "an5296 Application of the CA3018"
Contextual Info: CA3086 General Purpose NPN Transistor Array May 2001 Applications Description • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120MHz The CA3086 consists of five general-purpose silicon NPN

Contextual Info: BD241CFP NPN SILICON POWER TRANSISTOR . FULLY MOLDED ISOLATED PACKAGE . 2000 V DC ISOLATION U.L. COMPLIANT APPLICATIONS . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD241CFP is silicon epitaxial-base NPN transistor mounted in TO-220FP fully molded

an5296

Abstract: CA3086 "an5296 Application of the CA3018" "Application of the CA3018" AN5296 application note AN5296 Application note CA3018 CA3086M AN5296 Application of the CA3018 CA3018 CA3086F
Contextual Info: CA3086 General Purpose NPN Transistor Array November 1996 Applications Description • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120MHz The CA3086 consists of five general-purpose silicon NPN

transistor marking 6c1

Contextual Info: BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP transistor in one package BC846PN BC846UPN

VPS05604

Contextual Info: SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data 4 • High current gain 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated NPN/PNP Transistors in one package 2 1 3 VPS05604 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C

Contextual Info: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101

SC74

Abstract: SMBT3904 SMBT3904PN SMBT3904UPN 6C TRANSISTOR MARKING
Contextual Info: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

creepage

Contextual Info: BUH315DFH  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS HIGH VOLTAGE CAPABILITY > 1500 V FULLY MOLDED ISOLATED PACKAGE 2KV DC ISOLATION (U.L. COMPLIANT) NPN TRANSISTOR WITH INTEGRATED

BUT30V

Abstract: BUT30
Contextual Info: BUT30V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS:

SILICON TRANSISTOR CORP

Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR npn 331 STS410 STS660 free pnp and npn transistor STS409 STS430 SDN22302 SDN22311
Contextual Info: 88D 00799 D T '3 3 -13 flfl DE |fl554D22 D D D O ? ^ =] 8254022 S I L ICON TRANSISTOR CORP S I L I C Ò T TRANSISTOR CORP VCEO SUS Polarity lc Max Am ps SDN22301 SDN22302 SDN22311 SDN22312 SDN22313 NPN NPN NPN NPN NPN 5.0 5.0 5.0 5.0 5.0 150 250 150 250 350

BUV298V

Contextual Info: BUV298V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS:

transistor D 2578

Abstract: BFQ34
Contextual Info: DISCRETE SEMICONDUCTORS BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Sem iconductors PHILIPS Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION

Contextual Info: SCS-THOMSON û iRâmi©IFlis iû êS BUV298V NPN TRANSISTOR POWER MODULE . NPN TRANSISTOR . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE (2500V RMS) • EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE

Contextual Info: SG S-TH O M SO N BUV298V [MOiglM&lieratMD NPN TRANSISTOR POWER MODULE . . . . . . . NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

Contextual Info: BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP transistor in one package • Pb-free (RoHS compliant) package

Contextual Info: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1

Contextual Info: SMBT3904.PN NPN / PNP Silicon Switching Transistor Array • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN / PNP transistor in one package SMBT3904PN SMBT3904UPN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1

Contextual Info: SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage 4 • Low collector-emitter saturation voltage 3 5 2 6 • Two galvanic internal isolated NPN/PNP 1 Transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101