MJE13007D
Abstract: NPN Transistor 50A 400V 24 pin ic utc rc
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive circuits where fall time is
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MJE13007D
MJE13007D
MJE13007DL-TA3-T
MJE13007DG-TA3-T
O-220
MJE13007DL-TA3-T
O-220
QW-R203-042
NPN Transistor 50A 400V
24 pin ic utc rc
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BUV28
Abstract: No abstract text available
Text: BUV28 NPN SWITCHING TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR VERY LOW SATURATION VOLTAGE FAST TURN-OFF AND TURN-ON APPLICATIONS: SWITCHING REGULATORS ■ SOLENOID / RELAY DRIVERS ■ DESCRIPTION High speed transistor suited for low voltage
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BUV28
O-220
BUV28
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BUV28
Abstract: No abstract text available
Text: BUV28 SILICON NPN SWITCHING TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR VERY LOW SATURATION VOLTAGE FAST TURN-OFF AND TURN-ON APPLICATIONS: SWITCHING REGULATORS ■ SOLENOID / RELAY DRIVERS ■ DESCRIPTION High speed transistor suited for low voltage
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BUV28
O-220
BUV28
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BUV28
Abstract: No abstract text available
Text: BUV28 SILICON NPN SWITCHING TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR VERY LOW SATURATION VOLTAGE FAST TURN-OFF AND TURN-ON APPLICATIONS: ■ SWITCHING REGULATORS ■ SOLENOID / RELAY DRIVERS DESCRIPTION High speed transistor suited for low voltage
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BUV28
O-220
BUV28
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MJE13007G
Abstract: MJE13007 utc mje13007l MJE13007-TA3-T MJE13007L-TA3-T MJE13007* transistor TRANSISTOR BIPOLAR 400V 20A silicon transistor Vcbo 800 Vceo 1000 Ic 20A NPN Transistor 50A 400V 700 v power transistor
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is
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MJE13007
MJE13007
MJE13007L
MJE13007G
MJE13007-TA3-T
MJE13007-TF3-
MJE13007L-TA3-T
MJE13007L-TF3-
MJE13007G-TA3-T
MJE13007G-TF3-
MJE13007G
utc mje13007l
MJE13007-TA3-T
MJE13007L-TA3-T
MJE13007* transistor
TRANSISTOR BIPOLAR 400V 20A
silicon transistor Vcbo 800 Vceo 1000 Ic 20A
NPN Transistor 50A 400V
700 v power transistor
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is
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MJE13007
MJE13007
MJE13007L-TA3-T
MJE13007G-TA3-T
MJE13007L-TF3-T
MJE13007G-TF3-T
MJE13007L-TF1-T
MJE13007G-TF1-T
MJE13007L-TF2-T
MJE13007G-TF2-T
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MJE13007-M
Abstract: NPN Transistor 50A 400V 24 pin ic utc rc 400v 50A Transistor
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007-M NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007-M is designed for high-voltage and high-speed power switching inductive circuits where fall time is
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MJE13007-M
MJE13007-M
MJE13007L-M-TA3-T
MJE13007G-M-TA3-T
O-220
MJE13007L-M-TA3-T
O-220
QW-R204-028
NPN Transistor 50A 400V
24 pin ic utc rc
400v 50A Transistor
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MJE13007
Abstract: mje13007 TRANSISTOR transistor MJE13007
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is
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MJE13007
MJE13007
MJE13007L-TA3-T
MJE13007G-TA3-T
MJE13007L-TF3-T
MJE13007G-TF3-T
O-220
O-220F
MJE13007L-TA3-T
O-220,
mje13007 TRANSISTOR
transistor MJE13007
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Untitled
Abstract: No abstract text available
Text: BUV28 NPN SWITCHING TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR VERY LOW SATURATION VOLTAGE FAST TURN-OFF AND TURN-ON s ct APPLICATIONS: ■ SWITCHING REGULATORS ■ SOLENOID / RELAY DRIVERS DESCRIPTION High speed transistor suited for low voltage
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BUV28
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NPN Transistor 5A 400V
Abstract: utc High Voltage Switching Transistor planar transistor
Text: UTC BU407 NPN EXPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC BU407 is a NPN expitaxial planar transistor, designed for use in TV Horizontal output and switching applications. 1 FEATURE *High breakdown voltage TO-220 1:BASE
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BU407
BU407
O-220
QW-R203-020
NPN Transistor 5A 400V
utc High Voltage Switching Transistor
planar transistor
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TRANSISTOR VCE 400V 500mA
Abstract: TRANSISTOR 400V 500mA vbe 10v, vce 5v NPN Transistor npn transistor 400V BU407 npn switching transistor Ic 5A
Text: UTC BU407 NPN EXPITAXIAL PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC BU407 is a NPN expitaxial planar transistor, designed for use in TV Horizontal output and switching applications. 1 FEATURE *High breakdown voltage TO-220 1:BASE
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BU407
BU407
O-220
100mA,
500mA,
QW-R203-020
TRANSISTOR VCE 400V 500mA
TRANSISTOR 400V 500mA
vbe 10v, vce 5v NPN Transistor
npn transistor 400V
npn switching transistor Ic 5A
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007-Q Preliminary NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007-Q is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is
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MJE13007-Q
MJE13007-Q
MJE13007L-Q-TA3-T
MJE13007G-Q-TA3-T
O-220
QW-R203-046
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007-P Preliminary NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is
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MJE13007-P
MJE13007-P
MJE13007L-P-TA3-T
MJE13007G-P-TA3-T
O-220
QW-R203-047
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NPN Transistor 1A 400V
Abstract: 2SC2414 npn transistors 400V 1A vbe 10v, vce 500v NPN Transistor transistor Ic 1A datasheet NPN IC Designs transistor npn 2a "switching applications" vce 500v NPN Transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2414 DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min) APPLICATIONS ·Designed for high speed power switching applications.
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2SC2414
NPN Transistor 1A 400V
2SC2414
npn transistors 400V 1A
vbe 10v, vce 500v NPN Transistor
transistor Ic 1A datasheet NPN
IC Designs
transistor npn 2a "switching applications"
vce 500v NPN Transistor
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vbe 10v, vce 500v NPN Transistor
Abstract: 2SC2415 NPN Transistor 1A 400V power transistor 3A vce 500v NPN Transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2415 DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min) APPLICATIONS ·Designed for high speed power switching applications.
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2SC2415
vbe 10v, vce 500v NPN Transistor
2SC2415
NPN Transistor 1A 400V
power transistor 3A
vce 500v NPN Transistor
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T13005
Abstract: STT13005 0016114E JESD97 st 125mA dc dc NPN POWER TRANSISTOR "SOT-32"
Text: STT13005 High voltage fast-switching NPN power transistor General features • NPN bipolar transistor ■ Medium voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications
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STT13005
OT-32
T13005
STT13005
0016114E
JESD97
st 125mA dc dc
NPN POWER TRANSISTOR "SOT-32"
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NPN Transistor 1A 400V SOT-89
Abstract: "NPN Transistor" NTE2431
Text: NTE2430 Silicon NPN Transistor High Voltage Amp/Switch Compl to NTE2431 Description: The NTE2430 is a silicon NPN transistor in a SOT–89 type surface mount package designed for use in amplifier and switching switching applications. Absolute Maximum Ratings:
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NTE2430
NTE2431)
NTE2430
NPN Transistor 1A 400V SOT-89
"NPN Transistor"
NTE2431
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high voltage fast switching npn transistor
Abstract: ULB121
Text: UNISONIC TECHNOLOGIES CO., LTD ULB121 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC ULB121 is a medium power transistor designed for use in switching applications. FEATURES * High breakdown voltage
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ULB121
ULB121
ULB121G-TM3-T
O-251
QW-R213-015
high voltage fast switching npn transistor
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NPN Transistor 600V
Abstract: B528 ULB122
Text: UNISONIC TECHNOLOGIES CO., LTD ULB122 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC ULB122 is a medium power transistor designed for use in switching applications. FEATURES * High breakdown voltage
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ULB122
ULB122
ULB122G-xx-TM3-T
O-251
QW-R213-014
NPN Transistor 600V
B528
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NPN Transistor 50A 400V
Abstract: to220f transistor
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS 1 TO-220 1 TO-220F DESCRIPTION The UTC MJE13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is
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MJE13007
O-220
O-220F
MJE13007
O-220F1
MJE13007L-TA3-T
MJE13007G-TA3-T
MJE13007L-TF3-T
MJE13007G-TF3-T
MJE13007L-TF1-T
NPN Transistor 50A 400V
to220f transistor
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HLB121
Abstract: No abstract text available
Text: UTC HLB121 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB121 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage
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HLB121
HLB121
O-251
HLB121L
QW-R213-015
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HLB122L
Abstract: HLB122
Text: UTC HLB122 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB122 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage
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HLB122
HLB122
O-251
HLB122L
QW-R213-014
HLB122L
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NPN Transistor 600V
Abstract: L13022
Text: UNISONIC TECHNOLOGIES CO., LTD L13022 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION 1 The UTC L13022 is a medium power transistor designed for use in switching applications. FEATURES * High breakdown voltage
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L13022
L13022
O-251
L13022L
L13022G
L13022-TM3-T
L13022L-TM3-T
L13022G-TM3-T
QW-R213-014
NPN Transistor 600V
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NPN Triple Diffused Planar Silicon Transistor
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD L13021 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION 1 The UTC L13021 is a medium power transistor designed for use in switching applications. FEATURES * High breakdown voltage
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L13021
L13021
O-251
L13021L
L13021G
L13021-TM3-T
L13021L-TM3-T
L13021G-TM3-T
QW-R213-015
NPN Triple Diffused Planar Silicon Transistor
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