NPN TRANSISTOR COLLECTOR BASE AND EMITTER 100V Search Results

CMPT2222

Abstract: CMPT2222A CMPT2222AE X10-4
Contextual Info: Central CMPT2222AE ENHANCED SPECIFICATION NPN SILICON TRANSISTOR ENHANCED SPECIFICATION MAXIMUM RATINGS: TA=25°C ♦ Collector-Base Voltage ♦ Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature

2N3055HV

Abstract: transistor 2N3055hv
Contextual Info: Transys Electronics L I M I T E D 2N3055HV NPN POWER TRANSISTOR TO-3 Metal Can Package Switching Regulator and Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Open Emitter Collector Emitter Voltage (Open Base) Emitter Base Voltage

Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTOR CSD1281 DPAK TO-252 Plastic Package ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage

2N1893

Abstract: 100khz 5v transistor npn
Contextual Info: 2N NPN SILICON PLANAR EPITAXIAL TRANSISTOR rv/ii CASE TO-39 2N1893 is an NPN silicon planar epitaxial transistor designed for audio amplifier output stage and medium power industrial applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage

2SD814

Abstract: 2SD814A
Contextual Info: Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features Collector to 2SD814 base voltage 2SD814A Collector to 2SD814 Emitter to base voltage VEBO Peak collector current

2N3055HV

Abstract: transistor 2N3055hv
Contextual Info: 2N3055HV 2N3055HV NPN POWER TRANSISTOR Switching Regulator and Power Amplifier Applications DIM A B C D E F G H J K L M MIN - 6,35 0,96 29,90 10,69 5.20 16,64 11,15 - 3,84 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)

2SD667

Abstract: transistor 2sd667 2SD6677 2SD667-2SD667A 2SD667A 2SD667 equivalent
Contextual Info: 2SD667-2SD667A 2SD667, 2SD667A TO-92MOD TRANSISTOR NPN FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM: 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: 1 A Collector-base voltage 120 V V(BR)CBO: Operating and storage junction temperature range 123

3DD13002

Abstract: 3DD13002B
Contextual Info: 3DD13002/B 3DD13002/ 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 900 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range

TS 4142

Abstract: LC04A KSD73 100V transistor npn 5a KSD288 ksa814 NPN Transistor TO220 VCEO 80V 100V SAA 1020 NPN/TS 4142
Contextual Info: SAMSUNG SEMICONDUCTOR 14E INC KSC5030 D I 00075*14 2 NPN SILICON TRANSISTOR T-33- HIGH VOLTAGE AND HIGH RELIABILITY HIQH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Collector-Base Voltage Coilector-Emitter Voltage Emitter-Base Voltage

Contextual Info: KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage : KSE180 : KSE181 : KSE182 Collector-Emitter Voltage

MJE180

Abstract: MJE181 MJE182
Contextual Info: MJE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage : MJE180 : MJE181 : MJE182 Collector-Emitter Voltage

3dd13003

Contextual Info: 3DD13003 3DD13003 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. BASE Collector current ICM: 1.5 A Collector-base voltage 700 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃

to-126 transistor

Abstract: 3DD13002 ib40
Contextual Info: 3DD13002 3DD13002 TO-126 TRANSISTOR NPN FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1.BASE Collector current ICM: 1 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range 2.COLLECTOR 3.EMITTER 123 TJ, Tstg: -55℃ to +150℃

3dd13003

Abstract: TRANSISTOR npn ic 1000ma
Contextual Info: 3DD13003 3DD13003 TO-220 TRANSISTOR NPN FEATURES Power dissipation PCM: 1. BASE 1.5 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 700 V Operating and storage junction temperature range 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃

3DD13002

Contextual Info: 3DD13002 3DD13002 TO-251 TRANSISTOR NPN FEATURES Power dissipation PCM: 1.25 1. BASE W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃

ic 41b

Abstract: npn 41A TIP41A equivalent TIP41C TIP41A TIP41B 8041A
Contextual Info: TIP41A/41B/41C TIP41A/41B/41C TO-220 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. COLLECTOR PCM: 2 W (Tamb=25℃) 3. EMITTER Collector current ICM: 6 A Collector-base voltage V(BR)CBO: TIP41A : 60 V TIP41B : 80 V TIP41C : 100 V Operating and storage junction temperature range

TIP122

Abstract: tip127 tip126 tip121 TIP120 TIP125 TIP120-TIP127 TRANSISTOR tip122 PNP POWER TRANSISTOR TIP122 tip122 transistor
Contextual Info: TIP120-TIP127 TO-220 Darlington Transistor TO-220 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features — TIP120,121,122 — TIP125,126,127 Darlington TRANSISTOR PNP Medium Power Complementary silicon transistors — Darlington TRANSISTOR (NPN) Dimensions in inches and (millimeters)

TIP120

Abstract: TIP121 TIP122 equivalent of TIP122 tip121 darlington TRANSISTOR tip122 transistor tip120 tip12 transistor tip121 darlington transistor NPN
Contextual Info: TIP120/121/122 TIP120, 121, 122 Darlington TRANSISTOR NPN TO-220 FEATURES Power dissipation 1. BASE 2. COLLECTOR PCM: 2 W (Tamb=25℃) 3. EMITTER Collector current ICM: 5 A Collector-base voltage TIP120: 60 V V(BR)CBO: TIP121: 80 V TIP122: 100 V Operating and storage junction temperature range

2N3772

Contextual Info: Transys Electronics L I M I T E D 2N3772 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Designed for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage

transistor dc 558 npn

Contextual Info: KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIG N ED FOR LOW POW ER AUDIO AM PLIFIER AND LOW CURRENT HIGH SP E E D SWITCHING APPLICATIONS ABSO LU TE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage: KSE180 : KSE181 : KSE182 Collector-Emitter Voltage

2SD1788

Abstract: ITO-220
Contextual Info: SavantIC Semiconductor Product Specification 2SD1788 Silicon NPN Power Transistors DESCRIPTION •With ITO-220 package ·Switching power transistor ·DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline ITO-220 and symbol

BD233

Abstract: BD237 bd237 equivalent BD237-10 BD235
Contextual Info: BD233/235/237 BD233/235/237 TRANSISTOR NPN TO-126 FEATURES 1. EMITTER Power dissipation PCM: 1.25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 2 A Collector-base voltage BD233 : 45 V V(BR)CBO: BD235: 60 V BD237: 100 V Operating and storage junction temperature range

TIP112

Contextual Info: DC COMPONENTS CO., LTD. TIP112 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low-speed switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter

transistor 2n5330

Abstract: transistor c63 NPN Transistor VCEO 80V 100V
Contextual Info: Contran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 44 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)