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    NPN TRANSISTOR CHARACTERISTICS BD136 Search Results

    NPN TRANSISTOR CHARACTERISTICS BD136 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR CHARACTERISTICS BD136 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD135

    Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
    Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics


    Original     		PDF MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727

    QBD135

    Abstract: bd139 bd135 to-126 BD13916S to-126 transistor Cross-Reference DATE transistor cross reference TO-126 fairchild bd139 cross reference transistor A 1263
    Text: BD135/137/139 BD135/137/139 Medium Power Linear and Switching Applications • Complement to BD136, BD138 and BD140 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF BD135/137/139 BD136, BD138 BD140 O-126 BD135 BD137 BD139 QBD135 bd139 bd135 to-126 BD13916S to-126 transistor Cross-Reference DATE transistor cross reference TO-126 fairchild bd139 cross reference transistor A 1263

    BD139

    Abstract: BD140 BD139 application BD140 application circuits circuits BD139 NPN transistor BD136 BD135 BD140 npn TRANSISTOR NPN BD140 of ic BD140
    Text: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed


    Original     		PDF BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD140 BD139 application BD140 application circuits circuits BD139 NPN transistor BD136 BD140 npn TRANSISTOR NPN BD140 of ic BD140

    BD135

    Abstract: power transistor bd139 power transistor bd135 transistor bd137 power transistor bd137 BD139 NPN transistor BD137 BD139 TRANSISTOR NPN BD139 NPN POWER transistor BD135
    Text: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD136, BD138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD135 : BD137 : BD139 Collector Emitter Voltage : BD135


    Original     		PDF BD135/137/139 O-126 BD136, BD138 BD140 BD135 BD137 BD139 BD135 power transistor bd139 power transistor bd135 transistor bd137 power transistor bd137 BD139 NPN transistor BD137 BD139 TRANSISTOR NPN BD139 NPN POWER transistor BD135

    BD135

    Abstract: BD135 BD137 BD139
    Text: BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 High current Complement to BD136, BD138 and BD140 1Emitter 2Collector 3Base CLASSIFICATION OF hFE 1


    Original     		PDF BD135 BD137 BD139 O-126 BD136, BD138 BD140 BD135-6 BD135-10 BD135-16 BD135 BD137 BD139

    BD135 CURVES

    Abstract: BD140 application circuits circuits BD139 BD139 application TRANSISTOR NPN BD140 BD140 TRANSISTOR NPN BD139 transistor BD135 BD136 bd139 bd140
    Text: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed


    Original     		PDF BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD135 CURVES BD140 application circuits circuits BD139 application TRANSISTOR NPN BD140 BD140 TRANSISTOR NPN BD139 transistor BD135 BD136 bd139 bd140

    BD139

    Abstract: BD139-10 bd140-10
    Text: BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features • Products are pre-selected in DC current gain Application ■ General purpose 3 Description 1 SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed


    Original     		PDF BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD139-10 bd140-10

    Untitled

    Abstract: No abstract text available
    Text: UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor ,designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD136/138/140 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 BD136 BD138 BD140

    BD140 pnp transistor

    Abstract: TRANSISTOR NPN BD140 BD136 BD140 npn TRANSISTOR PNP BD140 BD140 transistor bd138 TRANSISTOR BD140 BD138 BD140 circuits
    Text: UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor ,designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD136/138/140 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 BD136 BD138 BD140 BD140 pnp transistor TRANSISTOR NPN BD140 BD136 BD140 npn TRANSISTOR PNP BD140 BD140 transistor bd138 TRANSISTOR BD140 BD138 BD140 circuits

    BD139

    Abstract: BD136 of ic BD140 BD140 pnp transistor transistor bd136 BD138 BD140 of transistor BD140 OF TRANSISTOR bd138 transistor BD138
    Text: UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor ,designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD136/138/140 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 BD136 BD138 BD140 BD139 BD136 of ic BD140 BD140 pnp transistor transistor bd136 BD138 BD140 of transistor BD140 OF TRANSISTOR bd138 transistor BD138

    CHINA TV FBT

    Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
    Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: ijm@kec.co.kr Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV


    Original     		PDF O-92M KRC102M KRC112M O-92L KTN2369, KTC3194 KTC3197, KTC3198 KTC945B KIA431 CHINA TV FBT transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS

    transistor BD140

    Abstract: power transistor bd136 to126 case transistor bd136
    Text: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR  1 DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD136-138-140 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 O-126C BD136L-x-T60-K BD136G-x-T60-K BD136L-x-TM3-T transistor BD140 power transistor bd136 to126 case transistor bd136

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR  DESCRIPTION 1 The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD136-138-140 BD136/BD138/BD140 BD135/BD137/ BD139. O-251 OT-223 O-126 O-126C BD136L-xx-T60-K BD136G-xx-T60-K

    BD138G

    Abstract: BD136 BD136 pin bd135 to-126 BD139 PIN DATA power transistor bd136 QW-R204-013 NPN Transistor Characteristics bd136 BD140l
    Text: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR „ DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD136-138-140 O-251 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 O-126 O-251 BD138G BD136 BD136 pin bd135 to-126 BD139 PIN DATA power transistor bd136 QW-R204-013 NPN Transistor Characteristics bd136 BD140l

    BD135

    Abstract: BD136 BUX85
    Text: BUX85 NPN SILICON POWER TRANSISTOR ● 40 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 3 A Peak Collector Current ● Typical tf = 200 ns at 25°C TO-220 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.


    Original     		PDF BUX85 O-220 BD135 BD136 BUX85

    BD135

    Abstract: BD136 BUX84 TRANSISTOR D 1978
    Text: BUX84 NPN SILICON POWER TRANSISTOR ● ● 40 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 3 A Peak Collector Current B 1 ● Typical tf = 200 ns at 25°C C 2 E 3 TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base.


    Original     		PDF BUX84 O-220 BD135 BD136 BUX84 TRANSISTOR D 1978

    BD136

    Abstract: BD135 BUX85 transistor bd135
    Text: BUX85 NPN SILICON POWER TRANSISTOR ● 40 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 3 A Peak Collector Current ● Typical tf = 200 ns at 25°C TO-220 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.


    Original     		PDF BUX85 O-220 TCP741AL BD136 BD135 BUX85 transistor bd135

    Untitled

    Abstract: No abstract text available
    Text: BUX84 NPN SILICON POWER TRANSISTOR 40 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 2 A Continuous Collector Current 3 A Peak Collector Current B 1 Typical tf = 200 ns at 25°C C 2 E 3 This series is currently available, but not recommended for new designs.


    Original     		PDF BUX84 O-220 TCP741AL

    BD139

    Abstract: power transistor bd135 BD136 bd139 Complement BD135
    Text: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO -126 • Complement to BD136, BD138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage : BD135 : BD137 : BD139 C o lle cto r E m itter Voltage: BD135


    OCR Scan     		PDF BD135/137/139 BD136, BD138 BD140 BD135 BD137 BD139 power transistor bd135 BD136 bd139 Complement BD135

    transistor BD 246

    Abstract: transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments
    Text: BD135 NPN EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD136 • • • • Driver Stages Active Convergence Control Circuits Switching Application • • • Ptot = 6.5 W at T c = 60 °C hpE > 40 at lc = 150 mA VcE satl < 0.5 V at lc = 0.5 A


    OCR Scan     		PDF BD135 BD136 STD-750. OT-32 40PEP 80PEP OT-32 O-66P transistor BD 246 transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments

    Untitled

    Abstract: No abstract text available
    Text: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : BD135 Rating Unit 45 V : BD137


    OCR Scan     		PDF BD135/137/139 BD136, BD140 BD135 BD137 BD139

    BD139 N

    Abstract: TRANSISTOR TC 137 BD135 LB 137 transistor power transistor bd135 BD139 BD139 NPN transistor bd135 N BD135 NPN transistor TRANSISTOR NPN BD139
    Text: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector Base Voltage :B D 1 3 5 : BD137 : BD139 C ollector E m itter V o lta g e : BD135


    OCR Scan     		PDF BD135/137/139 BD136, BD138 BD140 BD135 BD137 BD139 BD139 N TRANSISTOR TC 137 LB 137 transistor power transistor bd135 BD139 BD139 NPN transistor bd135 N BD135 NPN transistor TRANSISTOR NPN BD139

    D137 transistor

    Abstract: D135 BD139B BD139 bd137b BD136
    Text: BD135/137/139 NPN EPITAXIAL SILICO N TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD136, B D 138 and B D 140 respectively ABSO LUTE MAXIMUM RATINGS Symbol Characteristic Collector B ase Voltage Collector Emitter Voltage


    OCR Scan     		PDF BD135/137/139 O-126 BD136, 150mA 500mA, D137 transistor D135 BD139B BD139 bd137b BD136

    transistor BD139 N

    Abstract: BD135-BD137-BD139
    Text: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic C ollector Base Voltage S ym bol : BD135 R a tin g U n it


    OCR Scan     		PDF BD135/137/139 BD136, BD138 BD140 BD137 BD139 BD135 transistor BD139 N BD135-BD137-BD139