Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NPN TRANSISTOR 900V Search Results

    NPN TRANSISTOR 900V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 900V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    npn vce 900v

    Abstract: CZTUX87 NPN transistor 900v V1220 250V 100MA NPN
    Text: Central CZTUX87 SURFACE MOUNT HIGH VOLTAGE NPN POWER TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTUX87 type is a NPN Silicon Power Transistor epoxy molded in a surface mount package, designed for high voltage switching applications.


    Original     		CZTUX87 OT-223 100mA, 200mA, 27-August npn vce 900v CZTUX87 NPN transistor 900v V1220 250V 100MA NPN PDF

    Untitled

    Abstract: No abstract text available
    Text: Central CZTUX87 SURFACE MOUNT HIGH VOLTAGE NPN SILICON POWER TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTUX87 type is a NPN Silicon Power Transistor epoxy molded in a surface mount package, designed for high voltage switching applications.


    Original     		CZTUX87 OT-223 100mA, 200mA, 14-November PDF

    CZTUX87

    Abstract: "Silicon Power Transistor" NPN transistor 900v
    Text: Central CZTUX87 SURFACE MOUNT HIGH VOLTAGE NPN SILICON POWER TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTUX87 type is a NPN Silicon Power Transistor epoxy molded in a surface mount package, designed for high voltage switching applications.


    Original     		CZTUX87 OT-223 17-June OT-223 CZTUX87 "Silicon Power Transistor" NPN transistor 900v PDF

    13003CD

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003CDH Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		13003CDH 290ns 13003CDHL-TM3-T 13003CDHGat QW-R223-022 13003CD PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-H NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		MJE13003-H 290ns MJE13003L-H-x-T60-K MJE130at QW-R223-010 PDF

    NPN transistor 900v

    Abstract: CZTUX87
    Text: CZTUX87 SURFACE MOUNT HIGH VOLTAGE NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTUX87 type is a NPN Silicon Power Transistor epoxy molded in a surface mount package, designed for high voltage switching applications.


    Original     		CZTUX87 CZTUX87 OT-223 100mA, 200mA, NPN transistor 900v PDF

    Untitled

    Abstract: No abstract text available
    Text: CZTUX87 SURFACE MOUNT HIGH VOLTAGE NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTUX87 type is a NPN Silicon Power Transistor epoxy molded in a surface mount package, designed for high voltage switching applications.


    Original     		CZTUX87 CZTUX87 OT-223 100mA, 200mA, PDF

    2SC3866

    Abstract: No abstract text available
    Text: Product Specification www.jmnic.com 2SC3866 Silicon NPN Power Transistor DESCRIPTION ・High Breakdown Voltage: V BR CBO= 900V(Min) ・High Switching Speed ・High Reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters


    Original     		2SC3866 2SC3866 PDF

    TO39 package

    Abstract: "TO-39 package" 2N5014
    Text: 2N5014 MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL NPN TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. General purpose power transistor for


    Original     		2N5014 TO39 package "TO-39 package" 2N5014 PDF

    "TO-39 package"

    Abstract: No abstract text available
    Text: 2N5014 MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL NPN TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. General purpose power transistor for


    Original     		2N5014 2N5014" 2N5014 2N5014-JQR-B 10/25m 20MHz "TO-39 package" PDF

    npn 1000V 15A

    Abstract: NTE62
    Text: NTE62 Silicon NPN Transistor High Voltage, Horizontal Deflection Output for TV Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2500V


    Original     		NTE62 npn 1000V 15A NTE62 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5014 MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL NPN TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. General purpose power transistor for


    Original     		2N5014 2N5014-JQR" 2N5014-JQR-B 10/25m 20MHz PDF

    2SC3676

    Abstract: SC46
    Text: Ordering number:EN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.


    Original     		EN1801E 2SC3676 00V/300mA 2010C 2SC3676] O-220AB 2SC3676 SC46 PDF

    2SC3675

    Abstract: ITR05786 ITR05787 ITR05788 ITR05789
    Text: Ordering number:ENN1800E NPN Triple Diffused Planar Silicon Transistor 2SC3675 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.


    Original     		ENN1800E 2SC3675 00V/100mA 2010C 2SC3675] O-220AB 2SC3675 ITR05786 ITR05787 ITR05788 ITR05789 PDF

    2SC3675

    Abstract: TRANSISTOR 2sC3675 SC46
    Text: Ordering number:EN1800E NPN Triple Diffused Planar Silicon Transistor 2SC3675 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.


    Original     		EN1800E 2SC3675 00V/100mA 2010C 2SC3675] O-220AB 2SC3675 TRANSISTOR 2sC3675 SC46 PDF

    2SC3676

    Abstract: ITR05795 ITR05797 ITR05798 VITR05796
    Text: Ordering number:ENN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.


    Original     		ENN1801E 2SC3676 00V/300mA 2010C 2SC3676] O-220AB 2SC3676 ITR05795 ITR05797 ITR05798 VITR05796 PDF

    2sc3676

    Abstract: No abstract text available
    Text: Ordering number:ENN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.


    Original     		ENN1801E 2SC3676 00V/300mA 2010C 2SC3676] 2sc3676 PDF

    2SC4630LS

    Abstract: ITR07313 ITR07314 ITR07315 ITR07316 ITR07317 ITR07318
    Text: Ordering number : ENN3699B 2SC4630LS NPN Triple Diffused Planar Silicon Transistor 2SC4630LS 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=900V . Small Cob(typical Cob=2.8pF).


    Original     		ENN3699B 2SC4630LS 100mA 2079D 2SC4630LS] O-220FI 2SC4630LS ITR07313 ITR07314 ITR07315 ITR07316 ITR07317 ITR07318 PDF

    NTE2309

    Abstract: No abstract text available
    Text: NTE2309 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V


    Original     		NTE2309 NTE2309 PDF

    2SC4631LS

    Abstract: ITR07322 ITR07323 ITR07324 ITR07325 ITR07327
    Text: Ordering number : ENN3700B 2SC4631LS NPN Triple Diffused Planar Silicon Transistor 2SC4631LS 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=900V . Small Cob(typical Cob=5.0pF).


    Original     		ENN3700B 2SC4631LS 300mA 2079D 2SC4631LS] O-220FI 2SC4631LS ITR07322 ITR07323 ITR07324 ITR07325 ITR07327 PDF

    2SC4631LS

    Abstract: ITR07322 ITR07323 ITR07324 ITR07325 ITR07327 AX750
    Text: Ordering number : ENN3700B 2SC4631LS NPN Triple Diffused Planar Silicon Transistor 2SC4631LS 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=900V . Small Cob(typical Cob=5.0pF).


    Original     		ENN3700B 2SC4631LS 300mA 2079D 2SC4631LS] O-220FI 2SC4631LS ITR07322 ITR07323 ITR07324 ITR07325 ITR07327 AX750 PDF

    11599HA

    Abstract: 2SC4579 EN3243
    Text: Ordering number:EN3243 NPN Triple Diffused Planar Silicon Transistor 2SC4579 900V/20mA Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process . unit:mm 2010C [2SC4579]


    Original     		EN3243 2SC4579 00V/20mA 2010C 2SC4579] O-220AB SC-46 11599HA 2SC4579 EN3243 PDF

    marking cev

    Abstract: No abstract text available
    Text: Central" CZTUX87 Semiconductor Corp. SURFACE MOUNT HIGH VOLTAGE NPN SILICON POWER TRANSISTOR DESCRIPTION: POWER The CENTRAL SEMICONDUCTOR CZTUX87 type is a NPN Silicon Power Transistor epoxy molded in a surface mount package, designed for high voltage switching applications.


    OCR Scan     		CZTUX87 OT-223 100mA, 200mA, 14-November marking cev PDF

    2SC3184

    Abstract: 20MS
    Text: Ordering number : EN1252C 2SC3184 N0.1252C NPN Triple Diffused Planar Silicon Transistor 800V/0.5A Switching Regulator Applications Features - High breakdown voltage Vcbo =900V . • Fast switching speed. • WideASO. Absolute Maximum Ratings at Ta= 25°C


    OCR Scan     		EN1252C l252C 2SC3184 00V/0 VcboS900V) 300ns 7cn707b 0D2GD74 100mA 2SC3184 20MS PDF