NPN TRANSISTOR 900V Search Results

npn vce 900v

Abstract: CZTUX87 NPN transistor 900v V1220 250V 100MA NPN
Contextual Info: Central CZTUX87 SURFACE MOUNT HIGH VOLTAGE NPN POWER TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTUX87 type is a NPN Silicon Power Transistor epoxy molded in a surface mount package, designed for high voltage switching applications.

Contextual Info: Central CZTUX87 SURFACE MOUNT HIGH VOLTAGE NPN SILICON POWER TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTUX87 type is a NPN Silicon Power Transistor epoxy molded in a surface mount package, designed for high voltage switching applications.

CZTUX87

Abstract: "Silicon Power Transistor" NPN transistor 900v
Contextual Info: Central CZTUX87 SURFACE MOUNT HIGH VOLTAGE NPN SILICON POWER TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTUX87 type is a NPN Silicon Power Transistor epoxy molded in a surface mount package, designed for high voltage switching applications.

marking cev

Contextual Info: Central" CZTUX87 Semiconductor Corp. SURFACE MOUNT HIGH VOLTAGE NPN SILICON POWER TRANSISTOR DESCRIPTION: POWER The CENTRAL SEMICONDUCTOR CZTUX87 type is a NPN Silicon Power Transistor epoxy molded in a surface mount package, designed for high voltage switching applications.

13003CD

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13003CDH Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003-H NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch

NPN transistor 900v

Abstract: CZTUX87
Contextual Info: CZTUX87 SURFACE MOUNT HIGH VOLTAGE NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTUX87 type is a NPN Silicon Power Transistor epoxy molded in a surface mount package, designed for high voltage switching applications.

Contextual Info: CZTUX87 SURFACE MOUNT HIGH VOLTAGE NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTUX87 type is a NPN Silicon Power Transistor epoxy molded in a surface mount package, designed for high voltage switching applications.

2SC3866

Contextual Info: Product Specification www.jmnic.com 2SC3866 Silicon NPN Power Transistor DESCRIPTION ・High Breakdown Voltage: V BR CBO= 900V(Min) ・High Switching Speed ・High Reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters

TO39 package

Abstract: "TO-39 package" 2N5014
Contextual Info: 2N5014 MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL NPN TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. General purpose power transistor for

"TO-39 package"

Contextual Info: 2N5014 MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL NPN TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. General purpose power transistor for

npn 1000V 15A

Abstract: NTE62
Contextual Info: NTE62 Silicon NPN Transistor High Voltage, Horizontal Deflection Output for TV Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2500V

Contextual Info: 2N5014 MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL NPN TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. General purpose power transistor for

2SC3676

Abstract: SC46
Contextual Info: Ordering number:EN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.

NPN Transistor 1A 400V

Abstract: 2SC3150 2sC3150 transistor NPN Transistor 1.5A 400V transistor 2sc3150 900VV transistor VCE 900V NPN Transistor 1.5A 5V NPN transistor 900v
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3150 DESCRIPTION •High Breakdown Voltage: V BR CBO= 900V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator Applications

2SC3675

Abstract: TRANSISTOR 2sC3675 SC46
Contextual Info: Ordering number:EN1800E NPN Triple Diffused Planar Silicon Transistor 2SC3675 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.

2SC3676

Abstract: ITR05795 ITR05797 ITR05798 VITR05796
Contextual Info: Ordering number:ENN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.

2sc3676

Contextual Info: Ordering number:ENN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.

2SC4630LS

Abstract: ITR07313 ITR07314 ITR07315 ITR07316 ITR07317 ITR07318
Contextual Info: Ordering number : ENN3699B 2SC4630LS NPN Triple Diffused Planar Silicon Transistor 2SC4630LS 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=900V . Small Cob(typical Cob=2.8pF).

NTE2309

Contextual Info: NTE2309 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage D Fast Switching Speed D Wide ASO Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V

2SC3184

Abstract: 20MS
Contextual Info: Ordering number : EN1252C 2SC3184 N0.1252C NPN Triple Diffused Planar Silicon Transistor 800V/0.5A Switching Regulator Applications Features - High breakdown voltage Vcbo =900V . • Fast switching speed. • WideASO. Absolute Maximum Ratings at Ta= 25°C

2SC4631LS

Abstract: ITR07322 ITR07323 ITR07324 ITR07325 ITR07327
Contextual Info: Ordering number : ENN3700B 2SC4631LS NPN Triple Diffused Planar Silicon Transistor 2SC4631LS 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=900V . Small Cob(typical Cob=5.0pF).

2SC4631LS

Abstract: ITR07322 ITR07323 ITR07324 ITR07325 ITR07327 AX750
Contextual Info: Ordering number : ENN3700B 2SC4631LS NPN Triple Diffused Planar Silicon Transistor 2SC4631LS 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=900V . Small Cob(typical Cob=5.0pF).

11599HA

Abstract: 2SC4579 EN3243
Contextual Info: Ordering number:EN3243 NPN Triple Diffused Planar Silicon Transistor 2SC4579 900V/20mA Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process . unit:mm 2010C [2SC4579]