MJE13009d
Abstract: 1A 300V TRANSISTOR MJE13009-D
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability.
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MJE13009D
MJE13009D
QW-R203-041
1A 300V TRANSISTOR
MJE13009-D
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BUV27
Abstract: No abstract text available
Text: BUV27 MEDIUM POWER NPN SILICON TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION APPLICATIONS SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The BUV27 is a Multiepitaxial Planar NPN
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BUV27
BUV27
O-220
O-220
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BUV27
Abstract: No abstract text available
Text: BUV27 MEDIUM POWER NPN SILICON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION APPLICATIONS SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The BUV27 is a Multiepitaxial Planar NPN
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BUV27
BUV27
O-220
O-220
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BUV27
Abstract: No abstract text available
Text: BUV27 MEDIUM POWER NPN SILICON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION APPLICATIONS SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The BUV27 is a Multiepitaxial Planar NPN
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BUV27
BUV27
O-220
O-220
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BUV27
Abstract: No abstract text available
Text: BUV27 MEDIUM POWER NPN SILICON TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION APPLICATIONS ■ SWITCHING REGULATORS ■ MOTOR CONTROL DESCRIPTION The BUV27 is a Multiepitaxial Planar NPN
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BUV27
BUV27
O-220
O-220
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTC6717MC ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A DESCRIPTION
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ZXTC6717MC
ZXTDA1M832
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BUV27
Abstract: No abstract text available
Text: BUV27 MEDIUM POWER NPN SILICON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION s ct APPLICATIONS ■ SWITCHING REGULATORS ■ MOTOR CONTROL DESCRIPTION The BUV27 is a Multiepitaxial Planar NPN
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BUV27
BUV27
O-220
O-220
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BUV48A
Abstract: transistor buv48a transistor 2015 JESD97 NPN Transistor 8A ST BUV48A
Text: BUV48A High voltage fast switching NPN power transistor Features • NPN transistor ■ High voltage capability ■ High current capability ■ Fast switching speed Applications 3 2 ■ Switching mode power supplies ■ Flyback and forward single transistor low power
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BUV48A
O-247
O-247
JESD97.
BUV48A
transistor buv48a
transistor 2015
JESD97
NPN Transistor 8A
ST BUV48A
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marking DA1
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC6717MC ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A
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ZXTC6717MC
ZXTDA1M832
marking DA1
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BUV48A
Abstract: JESD97 ST BUV48A
Text: BUV48A High voltage fast switching NPN power transistor Features • NPN transistor ■ High voltage capability ■ High current capability ■ Fast switching speed Applications 3 2 ■ Switching mode power supplies ■ Flyback and forward single transistor low power
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BUV48A
O-247
O-247
BUV48A
JESD97
ST BUV48A
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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DC 5V to DC 100V CIRCUIT DIAGRAM
Abstract: 110v to 5v dc schematic transistor Ic 4A datasheet NPN 547 relay ic nte215
Text: NTE215 Silicon NPN Transistor Darlington Driver Description: The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications include motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers.
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NTE215
NTE215
500IB1
500IB2
DC 5V to DC 100V CIRCUIT DIAGRAM
110v to 5v dc schematic
transistor Ic 4A datasheet NPN
547 relay ic
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BUV48A
Abstract: BUX48A bux48a equivalent BUX48A DATA
Text: 1165900 High power NPN silicon transistors. Features: • • • • NPN transistor. High voltage capability. High current capability. Fast switching speed. Applications: Switch mode power supplies. Flyback and forward single transistor low power converters.
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BUV48A
BUX48A
bux48a equivalent
BUX48A DATA
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MLP832
Abstract: ZXTDA1M832 ZXTDA1M832TA ZXTDA1M832TC IC 630 marking DA1
Text: ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,
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ZXTDA1M832
MLP832
ZXTDA1M832
ZXTDA1M832TA
ZXTDA1M832TC
IC 630
marking DA1
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D5510
Abstract: BTD5510F3 transistor 406 specification BTD5510
Text: Spec. No. : C658F3 Issued Date : 2005.08.23 Revised Date :2006.11.29 Page No. : 1/3 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD5510F3 Description The BTD5510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
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C658F3
BTD5510F3
BTD5510F3
O-263-3L
UL94V-0
D5510
transistor 406 specification
BTD5510
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NPN Transistor VCEO 1000V
Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A
Text: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:
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NTE2310
NTE2310
100mA,
NPN Transistor VCEO 1000V
1000v, NPN
transistor VCE 1000V
transistor VCEO 1000V
TO218 package
transistor 1000V 6A
high voltage fast switching npn 4A
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mje13009 equivalent
Abstract: MJE13009 MJE13
Text: MJE13009 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW BASE-DRIVE REQUIREMENTS DESCRIPTION The MJE13009 is a Multiepitaxial Mesa NPN transistor mounted in Jedec TO-220 plastic
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MJE13009
MJE13009
O-220
O-220
mje13009 equivalent
MJE13
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transistor VCE 1000V
Abstract: npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a
Text: NTE2333 Silicon NPN Power Transistor for Switching Power Applications Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line– operated Switchmode Power supplies and electronic light ballasts. Features:
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NTE2333
NTE2333
130mA,
650mA
600mA,
transistor VCE 1000V
npn 1000V 15A
NPN Transistor VCEO 1000V
300V transistor npn 15a
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IC 630
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •
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ZXTC6717MC
100mV
-140mV
DS31926
IC 630
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D5510
Abstract: darlington transistor C 3300 BTD5510F3
Text: Spec. No. : C658F3 Issued Date : 2005.08.23 Revised Date : Page No. : 1/5 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD5510F3 Description The BTD5510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application.
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C658F3
BTD5510F3
BTD5510F3
O-263-3L
UL94V-0
D5510
darlington transistor C 3300
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TCA 785
Abstract: transistor BUX 48 vu bux BUX41 sonde de temperature
Text: *BUX 41N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE îfc Preferred device D isp o sitif recom m andé High speed, high current, high power transistor Transistor de puissance rapide, fo r t courant Thermal fatigue inspection
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CB-19
TCA 785
transistor BUX 48
vu bux
BUX41
sonde de temperature
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2SC1449
Abstract: S10ms
Text: NEC SILICON POWER TRANSISTOR ELEC T R O N DEVICE 2SC 1449 AF POWER AMPLIFIER AND RF POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC1449 is an NPN general purpose transistor designed for use in audio and radio frequency power amplifiers.
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2SC1449
2SC1449
S10ms
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2SC2352
Abstract: z239
Text: NEC SILICON TRANSISTOR BfCTRON OEVKE 2SC2352 VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC2352 is an NPN silicon epitaxial transistor intended fo r use as a in millimeters inches V H F m ixer in a tun er o f a T V receiver.
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2SC2352
2SC2352
11-i--
z239
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Untitled
Abstract: No abstract text available
Text: n z 7 SCS-THOM SON m JM raoei^iLHGirBisiHBei BUV27 MEDIUM POWER NPN SILICON TRANSISTOR • . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION
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BUV27
BUV27
O-220
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