NPN SILICON EPITAXIAL PLANAR TRANSISTOR 700 V Search Results

NPN SILICON EPITAXIAL PLANAR TRANSISTOR 700 V Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

NPN SILICON EPITAXIAL PLANAR TRANSISTOR 700 V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BV45 Abstract: No abstract text available Text: BV45 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage	Original		PDF
BV45 Abstract: No abstract text available Text: BV45 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage	Original		PDF
bv32 Abstract: TRANSISTOR BV32 switching transistor bv-32 Text: BV32 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage	Original		PDF
bv32 Abstract: TRANSISTOR BV32 switching transistor BV32 to92 Text: BV32 NPN Silicon Epitaxial Planar Transistor High voltage fast switching power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage	Original		PDF
13002a Abstract: 13002A transistor ST-13002 ST13002A 019G 700 v power transistor Text: ST 13002A NPN Silicon Epitaxial Planar Transistor High voltage power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400	Original	3002A 13002a 13002A transistor ST-13002 ST13002A 019G 700 v power transistor	PDF
transistor 13002 Abstract: 13002 npn ST-13002 transistor TO-92 13002 13002 transistor 13002 ST 13002 13002 TO-92 ST13002 13002 power transistor Text: ST 13002 NPN Silicon Epitaxial Planar Transistor High voltage power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400	Original		PDF
13002a Abstract: 13002A transistor 700 v power transistor 019G Text: ST 13002A NPN Silicon Epitaxial Planar Transistor High voltage power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400	Original	3002A 13002a 13002A transistor 700 v power transistor 019G	PDF
13002 npn Abstract: transistor 13002 13002 transistor ST-13002 13002 transistor TO-92 13002 13002 power transistor ST 13002 transistor 13002 TO 05 ,st 13002 Text: ST 13002 NPN Silicon Epitaxial Planar Transistor High voltage power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400	Original		PDF
transistor j13009-2 Abstract: J13009-2 j13009 2 FJP13009 Text: FJP13009 High-Voltage Fast-Switching NPN Power Transistor Features Description • High-Voltage Capability • High Switching Speed The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is available with multiple hFE bin classes for ease of design use. The FJP13009 is	Original	FJP13009 FJP13009 O-220 O-220 FJP13009TU transistor j13009-2 J13009-2 j13009 2	PDF
Untitled Abstract: No abstract text available Text: MMBTSC3324 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: High voltage: VCEO=120V High hFE:hFE=200-700	Original	MMBTSC3324 OT-23 100Hz,	PDF
Untitled Abstract: No abstract text available Text: MMBTSC3324 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: z High voltage: VCEO=120V z High hFE:hFE=200-700	Original	MMBTSC3324 OT-23 100Hz,	PDF
13003z Abstract: 13003 Text: ST 13003Z NPN Silicon Epitaxial Planar Transistor for power switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 450 V Emitter Base Voltage VEBO 9 V IC 1.3	Original	13003Z O-251 13003z 13003	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are	Original	MMDT8050S MMDT8050S MMDT8050SG-AL6-R OT-363 QW-R218-012	PDF
free IC npn transistor Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are	Original	MMDT8050S MMDT8050S MMDT8050SL-AL6-R MMDT8050SG-AL6-R OT-363 2012ues QW-R218-012 free IC npn transistor	PDF

marking 1F SOT323 Abstract: marking 1ks 1LS SOT 23 sot-323 transistor marking code 15 BC846AW BC846BW BC846W BC847AW BC847BW BC847W Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor BC846W/BC847W/BC848W FEATURES z Low Current. z Low voltage. z Power dissipation. PC=200mW Pb Lead-free APPLICATIONS z General purpose switching and amplification application.	Original	BC846W/BC847W/BC848W 200mW) OT-323 BC846W BC847W BC848W marking 1F SOT323 marking 1ks 1LS SOT 23 sot-323 transistor marking code 15 BC846AW BC846BW BC846W BC847AW BC847BW BC847W	PDF
2N4300 Abstract: No abstract text available Text: TYPE 2N4300 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR • TYPE 2N4300 BULLETIN NO. DL-S 668562, FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 15 W at 100°C Cose Temperature • Max VtE jat of 0.3 V at 1 A l ( • Typ t enof 130 ns at 1 A lc	OCR Scan	2N4300	PDF
Untitled Abstract: No abstract text available Text: MMBT1815W NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 Description A L The MMBT1815W is designed for use in driver stage of AF amplifier and general purpose amplification. 3 1 Top View V B S 2 G COLLECTOR	Original	MMBT1815W OT-323 MMBT1815W 100mA, 300us, 01-Jun-2002	PDF
High voltage fast switching power transistor to92 Abstract: UBV45 NPN Silicon Epitaxial Planar Transistor to92 Text: UNISONIC TECHNOLOGIES CO., LTD UBV45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage	Original	UBV45 UBV45 UBV45L UBV45-T92-A-B UBV45-T92-A-K UBV45L-T92-A-B UBV45L-T92-A-K UBV45L-T9t QW-R201-081 High voltage fast switching power transistor to92 NPN Silicon Epitaxial Planar Transistor to92	PDF
2SC2055 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC2055 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications. Dimensions i 0 5 .1 M A X	OCR Scan	2SC2055 2SC2055 175MHz --j25iJ 5k7k10k	PDF
npn transistor footprint Abstract: TRANSISTOR BL 100 NPN Silicon Epitaxial Planar Transistor KTA2014 KTC4075 SOT 23 LY Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High and excellent DC current gain. z Complementary to KTA2014. z Small package. KTC4075 Pb Lead-free APPLICATIONS z General purpose application. z Switching application.	Original	KTC4075 KTA2014. OT-23 BL/SSSTC112 npn transistor footprint TRANSISTOR BL 100 NPN Silicon Epitaxial Planar Transistor KTA2014 KTC4075 SOT 23 LY	PDF
ALY TRANSISTOR Abstract: ALG TRANSISTOR transistor ALY ALY Transistor MARKING aly sot23 transistor aly 10 KTC3875 ALY TRANSISTOR NPN SOT23 marking ALG ALG Transistor MARKING Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Complementary To KTA1504. z Excellent HFE Linearity. z Low noise. KTC3875 Pb Lead-free APPLICATIONS z General purpose application, switching application. SOT-23	Original	KTC3875 KTA1504. OT-23 BL/SSSTC056 ALY TRANSISTOR ALG TRANSISTOR transistor ALY ALY Transistor MARKING aly sot23 transistor aly 10 KTC3875 ALY TRANSISTOR NPN SOT23 marking ALG ALG Transistor MARKING	PDF
2SC5125 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in VHF band. OUTLINE DRAWING Dimension in mm Rl FEATURES • High power output and high gain : Po § BOW, Gpe S 7.2dB,	OCR Scan	2SC5125 2SC5125 175MHz, 175MHz	PDF
2SC5125 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC5125 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC5125 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in VHF band. OUTLINE DRAWING Dimension in mm Rl FEATURES • High power output and high gain : Po § BOW, Gpe S 7.2dB,	OCR Scan	2SC5125 2SC5125 175MHz, 175MHz	PDF
Untitled Abstract: No abstract text available Text: MMBT9018 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Description SC-59 A L The MMBT9018 is designed for use in AM/FM amplifier and local oscillator of FM/VHF tuner.	Original	MMBT9018 SC-59 MMBT9018 01-Jun-2002	PDF

NPN SILICON EPITAXIAL PLANAR TRANSISTOR 700 V Search Results

NPN SILICON EPITAXIAL PLANAR TRANSISTOR 700 V Result Highlights (5)

NPN SILICON EPITAXIAL PLANAR TRANSISTOR 700 V Datasheets Context Search

BV45

BV45

bv32

bv32

13002a

transistor 13002

13002a

13002 npn

transistor j13009-2

Untitled

Untitled

13003z

Untitled

free IC npn transistor

marking 1F SOT323

2N4300

Untitled

High voltage fast switching power transistor to92

2SC2055

npn transistor footprint

ALY TRANSISTOR

2SC5125

2SC5125

Untitled